SILICON PIN DIODES

High voltage PIN diodes

MICROWAVE

HIGH VOLTAGE PIN DIODES

Applications

Characteristics

These devices are most often used to control

Radio Frequency (RF) and microwave signals.
Typically, high-voltage PIN diodes are found in
high power switches and phase shifters.

The controlling element of a PIN diode is its

Intrinsic (l) layer. The diode itself is a sandwich,
i.e. a high resistivity l layer between highly
doped layers of P and N materials. With
negative bias on the l layer, the PIN diode
exhibits very high parallel resistance, e.g. acting
as a switch in the OFF position. A positive bias
causes the diode to conduct, with very low
series resistance. Certain applications impose
specific objectives on diode construction (e.g.
in the HF and VHF band, low signal distortion
can be achieved with high Minority Carrier

TEMEX COMPONENTS high-voltage PIN diode

products are designed for very high reliability,
high power handling capabilities, high
isolation, and low signal distortion, especially in
the HF and VHF bands. High-power multithrow
switch modules are available for frequencies in
the 1 MHz to 1 GHz range.

Lifetime
All high-voltage PIN diode products can be
configured on chips or in various packages: e.g.
series, shunt, flat mount, stud mount, surface
mount (SMD) and (on request) non-magnetic.

l).

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SILICON PIN DIODES

High voltage PIN diodes
MICROWAVE

Silicon PIN diodes for switching & phase shifting applications

(medium & high power)
Description
This series of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa
technology. A broad range of products is available, in terms of breakdown voltages, junction
capacitances, and series resistances, to suit a large variety of applications, from 1 MHz to several GHz.
These diodes are available in non-magnetic packages.
Electrical characteristics
CHIP DIODES
Characteristics

at 25C

Chip
dimensions

Test conditions

TYPE
PIN
EH80050
EH80051
EH80052
EH80053
EH80055
EH80080
EH80083
EH80086
EH80100
EH80102
EH80106

N/A

I < 10A I < 10A

mm typ.
Gold dia per side
0.13
0.15
0.25
0.27
0.34
0.13
0.27
0.55
0.23
0.30
0.55

Breakvoltage down
VR
VBR

Applicable

0.6
0.6
0.8
0.8
0.9
0.8
0.9
1.4
0.9
0.9
1.4

CHIP AND PACKAGED DIODES

Junction
Forward series
Minority
capacitance
resistance
carrier
Cj (1)
RSF
lifetime

VR = 50 V

f = 120 MHz

IF = 10 mA

f = 1 MHz

IF

IR = 6mA

V
min.

V
typ.

typ.

pF
max

500
500
500
500
500
800
800
800
1000
1000
1000

550
550
550
550
550
850
850
850
1100
1100
1100

0.15
0.30
0.60
0.80
1.2
0.15
0.80
1.4
0.30
0.60
1.40

0.20
0.40
0.70
0.90
1.3
0.20
0.90
1.7
0.40
0.75
1.70

VR = 100V
EH80120
EH80124
EH80126
EH80129
EH80154
EH80159

0.25
0.65
0.75
1.25
0.65
1.25

0.9
1.5 H (2)
1.7 H (2)
2.2
1.5
2.2

1200
1200
1200
1200
1500
1500

1300
1300
1300
1300
1600
1600

0.30
1.00
1.40
2.00
1.00
2.00

0.40
1.20
1.70
2.30
1.20
2.30

VR = 200V
EH80182
EH80189
EH80204
EH80209
EH80210
(1)
(2)

0.75
1.4
0.85
1.4
1.5

1.5
2.6 H (2)
1.7
2.6 H (2)
3 H (2)

1800
1800
2000
2000
2000

1900
1900
2100
2100
2100

0.60
2.00
1.00
2.00
3.00

0.80
2.40
1.30
2.40
3.40

AS SHOWN

MAX
IF = 100 mA IF = 200 mA
0.70
0.60
0.40
0.30
0.25
0.80
0.40
0.35
0.70
0.40
0.35

0.65
0.55
0.30
0.25
0.22
0.70
0.30
0.28
0.60
0.35
0.30

IF = 200 mA

IF = 300 mA

0.60
0.45
0.40
0.30
0.45
0.30

0.55
0.35
0.30
0.25
0.35
0.25

IF = 200 mA

IF = 300 mA

0.60
0.35
0.50
0.35
0.20

0.50
0.30
0.40
0.30
0.15

Other capacitance values available on request

Hexagonal chips (between opposite flats)

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S
min.
1.1
1.5
2.0
2.5
3.0
2.0
3.0
5.0
3.0
4.0
7.0

6.0
10.0
12.0
15.0
10.0
15.0

12.0
18.0
14.0
18.0
25.0

SILICON PIN DIODES

High voltage PIN diodes
MICROWAVE

PACKAGED DIODES

Type

Thermal
resistance
RTH (4)

Standard case (3)

Typical operating
conditions
VSWR < 1.5
Z0 = 50

PDISS = 1 W

Chip configuration
C/W
PIN
DH80050
DH80051
DH80052
DH80053
DH80055
DH80080
DH80083
DH80086
DH80100
DH80102
DH80106

Shunt
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
BH35
F 27d
F 27d
BH35

Isolated stud
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH300

Flat mounted
BH202
BH202
BH202
BH202
BH202
BH202
BH202
BH202
BH202
BH202
BH202

max
20.0
18.0
15.0
12.0
10.0
18.0
12.0
8.0
15.0
12.0
5.5

DH80120
DH80124
DH80126
DH80129
DH80154
DH80159

F 27d
BH35
BH35
BH141
BH141
BH141

BH301
BH300
BH300
BH300
BH300
BH300

BH202
BH200
BH200
BH200
BH200
BH200

DH80182
DH80189
DH80204
DH80209
DH80210

BH35
BH141
BH141
BH141
BH141

BH300
BH300
BH300
BH300
BH300

BH200
BH200
BH200
BH200
BH200

Frequency

Power

50
30
20
20
10
50
20
10
20
20
10

MHz
- 20000
- 15000
- 10000
3000
1000
- 20000
- 10000
500
- 10000
- 3000
500

W
50
80
100
100
250
60
80
200
80
100
500

15.0
8.0
6.0
4.5
8.0
4.5

10
10
10
5
10
5

8000
2000
500
200
2000
200

100
250
500
1000
250
1000

10
4.5
8.0
4.5
2.5

10
15
10
1.5
1.5

50
200
1000
200
50

1000
250
1000
1000

(3)Custom cases available on request (4) RTH is measured in a standard shunt case, grounded on an infinite heatsink

Temperature ranges:

Operating junction (Tj): -55 C to +175 C

Storage: -65 C to +200 C

1-19

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SILICON PIN DIODES

High voltage PIN diodes
MICROWAVE

Two & three port RF PIN switch modules

Description
This series of SP2T and SP3T RF switches uses high voltage PIN diodes, from the EH80000 family,
to achieve very low loss and distortion.
Theses switches can be used from 1.5 to 1000 MHz, and can handle power levels up to 1000 W.

Electrical characteristics

Loss

Isolation

Input power

Pin

N/A

f (MHz)
If (mA)

f (MHz)
Vr (V)

CW

Forward

Reverse

Switch
Type

MHz

dB

dB

mA

(2)

typ.

max

min.

max

typ.

typ.

10
10

100
100

50
50

100
100
100
100

200
200
200
200

150
150
150
150

1000

400

600

1000
1000

1000
1000

700
700

Characteristics
at 25C

Frequency
range

Test conditions
Type

Case

(1)

SH90101
SH91101

TO39
TO39

SP2T
SP2T

10 - 600
10 - 600

SH90103
SH91103
SH92103
SH93103

BH203
BH203
BH204
BH204

SP2T
SP2T
SP3T
SP3T

20
20
20
20

SH91107

BH403a

SP2T

20 - 500

SH90207
SH91207

BH405
BH405

SP2T
SP2T

1.5 - 50
1.5 - 50

1000
1000
1000
1000

(1) Series 90 and 92 : common anode

Series 91 and 93 : common cathode

200 MHz 100 MHz

100 mA
0V
0.35
35
0.35
35
400 MHz 200 MHz
100 mA
0V
0.35
25
0.35
25
0.35
25
0.35
25
100 MHz 200 mA
200 mA
100 V
0.20
33
10 MHz 10 MHz
200 mA
200 V
0.15
37
0.15
37
(2)

Custom configurations available on request

Temperature ranges:
Operating junction (Tj) :
Storage
:

1-20

Suggested bias
conditions

- 55 C to + 150 C
- 65 C to + 175 C

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SILICON PIN DIODES

High voltage PIN diodes
MICROWAVE

Internal wiring diagrams

Typical performances
INSERTION

LOSS AND ISOLATION

VERSUS FREQUENCY

common
anode

common
cathode

Isolation
(dB)

Insertion
loss (dB)
0.9

46

0.8

44
42

0.7

Isolation

0.6

BOTTOM
VIEW

SH91101

SH90101

38

0.4

36

0.3

34

0.2

32

Insertion
loss

0.1
0
10

30
28

20 30 50 70 100

200

SH91103

400 600

Isolation
(dB)

Insertion
loss (dB)

SH90103

40

0.5

0.8

52

0.7

48

0.6

44

0.5

40

Isolation

0.4

36
32

0.3

28

0.2

24

Insertion
loss

0.1
0
20

SH92103

30

20

Isolation
(dB)

Insertion
loss (dB)

52

0.7

48

0.6

44

0.5

40

Isolation

0.4

36

0.3

32

Insertion
loss

0.2

SH91107

28
24

0.1
0
20

30

50 70 100

bias bias

bias

200 300

20
500

0.8

54

0.7

51

0.6

48

0.5

45

Isolation

0.4

42

0.3

SH91207

f
(MHz)

Isolation
(dB)

Insertion
loss (dB)

SH90207

50 70 100 200 400 700 1000 (MHz)

SH93103

0.8

bias

f
(MHz)

38

Insertion
loss

0.2

36
33

0.1

30

0
1

3 5

7 10

20

30

50

f
(MHz)

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