THE HASHEMITE UNIVERSITY

Computer and Electrical Engineering Department

Electronics 1 Laboratory (404232)

Session Day: THU. (2.00-5.00)

Report

Experiment Name: Common Emitter and Common

Collector Amplifiers

Experiment Date: 29-11-2007

Instructors' Name:

-Dr. Jalel Chebil

-Eng. Fadi.

Student's Name: Adnan Fahim Mousa Awwad.

Student's ID: 532534

The Common Emitter Amplifier:

Objectives:
After performing this experiment you should be able to:
• Determine the voltage gain of a CE amplifier.
• Determine the input impedance of a CE amplifier.
• Determine AC resistance of the emitter re for a CE amplifier.
• Explain the role of coupling and bypass capacitors in a CE amplifier.
• Demonstrate the effect that a load has on the voltage gain of a CE amplifier.
Equipments:
• Variable DC power supply.
• Breadboard.
• Resistors.
• 2N3904 NPN Transistor.
• Dual-trace oscilloscope.
• Capacitors.
• Potentiometer.
Theory:
In a CE amplifier the input signal is applied between the base and the emitter, the
output voltage is developed between the collector and emitter and the transistor
emitter is common to both the input and output circuit. It is the most common BJT
amplifier configuration and has the following characteristics:
1. High voltage gain.
2. High current gain.
3. Moderate input resistance.
4. Moderate output resistance.
5. 180o voltage phase shift between the input and output waveforms.
To make any transistor circuit amplify AC signals the B-E junction must be forward
biased and the B-C junction must be reversed biased, for this there are several ways to
apply DC bias, the simplest method is called the base bias or fixed bias but it is
frequently unsatisfactory. Base bias is recognized by a single resistor connected from
Vcc to the transistor base. A much more widely used bias circuit is called voltage
divider bias, it is not as sensitive as the base bias method to the transistor variations
and temperature changes.
To analyze any amplifier start with the DC parameters then the AC parameters for the
amplifier can be analyzed.
In the figure below, the equivalent circuit for the NPN transistor is shown (for AC
measurements):

Figure 1: AC equivalent circuit of NPN transistor

Procedure:
Part 1: DC Measurements:
1. Measure and record the values of the resistors.
Parameter R1 R2 Rc RE
Measure Value 99KΩ 21.8KΩ 98Ω 818Ω
2. Construct the amplifier shown in figure 2. The signal generator should be
turned off. Measure and record the DC voltages listed in table 1.
3. Using the measured resistances and the value of β determined in step 2
compute the DC parameters listed in table 1 for the CE amplifier shown in figure
2. Your measured and computed values should agree within 10%.
DC Parameter Computed Value Measured Value %error
VB 1.79V 1.796V 0.33
VE 1.091V 1.098V 0.64
IE 11.13mA 11.2mA 0.63
VC 5.93V 5.99V 1.18
VCE 4.839V 4.88V 0.84
β 215.97
Table 1: DC parameters of CE amplifier

Figure 2: CE amplifier

The Common Collector Amplifier:

Objectives:
• Computing and measuring the DC parameters of common collector amplifier.
• Computing and measuring the AC parameters of CC amplifier including the
voltage gain, input resistances and power gain.
• Testing the effect of different load resistors on the AC parameters of the CC
amplifier.

Theory:
The common collector amplifier is the second most common BJT amplifier
configuration. The CC amplifier (emitter-follower) has the input signal applied to the
base and the output signal is taken from the emitter.
This amplifier has the following characteristics:
1. Almost unity voltage gain.
2. High current gain.
3. High input resistance.
4. Low output resistance.
5. 0o voltage phase shift between the input and the output waveforms.

Figure 1 (a) illustrates a CC amplifier using a PNP transistor with voltage divider
bias. Frequently, a CC amplifier follows a voltage amplifier. Instead of having
separate bias resistor, bias may be obtained through a DC path connected from the
previous stage as illustrated in figure 1 (b). This technique is common in power
amplifiers.

Figure 1: (a) CC with PNP transistor (b) CE and CC amplifiers

Analysis of the amplifier begins with the DC parameters. These procedures are
summarized for the PNP transistor shown in figure 1 (a):
1. Mentally remove the capacitors from the circuit since they appear open to the
DC. This causes the load resistor RL to be removed.
2. Solve for the base voltage by applying the voltage divider rule to R1 and R2.
3. Add the .7 V drop across the base-emitter diode from VB to obtain the emitter
voltage.
4. The DC current in the emitter circuit is found by applying ohm's law to Re. the
voltage across the emitter resistor is the difference between the supply voltage
VEE and VE. The collector current is nearly equal to the emitter current and the
collector voltage is zero.
The AC parameters for the amplifier can now be analyzed.

Procedure:
Part 1: DC measurements:
1. Measure and record the resistance values of the resistors listed in table 1.
Resistor Value (Ω) Measured Value (Ω)
R1 33K 33K
R2 10K 9.99K
RE 1K 0.98K
Table 1
 2. Construct the amplifier shown in figure 2. The signal generator should be
turned off. With the power supply on, measure and record the DC voltages listed
in table 2.
3. Using the measured resistances and the value of β determined in step 2
compute the DC parameters listed in table 2 for the CC amplifier shown in figure
2. Your measured and computed values should agree within 10%.

Figure 2: CC amplifier

DC Parameter Computed Value Measured Value %error

VB 3.146V 3.147V 0.03
VE 3.847V 3.85V 0.08
IE 8.139mA 8.316mA 0.04
VC 0V 0V 0
β 176.9