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SGL0363Z
5MHz to
2000MHz Low
Noise Amplifier Silicon
Germanium
Product Description
Features
Optimum Technology
Matching Applied
GaAs HBT
Vpc
RF Out
GaAs MESFET
InGaP HBT
Narrow-band
Matching
Network
Gnd
Active Bias
Network
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
RF In
Applications
Narrow-band
Matching
Network
Si CMOS
Si BJT
Gnd
GaN HEMT
RF MEMS
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
21.0
dB
200MHz
20.0
22.0
dB
900MHz
16.5
18.5
dB
1575MHz
Output Power at 1dB Compression
1.1
dBm
200MHz
2.5
dBm
900MHz
1.0
3.5
dBm
1575MHz
Output Third Order Intercept Point
17.2
dBm
200MHz
12.9
dBm
900MHz
11.0
14.0
dBm
1575MHz
Input Return Loss
14.0
dBm
200MHz
15.0
dBm
900MHz
8.5
10.0
dBm
1575MHz
Output Return Loss
20.0
dBm
200MHz
12.0
dBm
900MHz
14.0
20.0
dBm
1575MHz
Noise Figure
1.0
dBm
200MHz
1.1
dBm
900MHz
1.5
2.0
dBm
1575MHz
Reverse Isolation
24.0
dBm
200MHz
27.0
dBm
900MHz
Thermal Resistance
173
C/W
junction - lead
Device Operating Current
3.5
5.2
7.0
mA
Test Conditions: VS=3.3V, ID =5.2mA Typ., IIP3 Tone Spacing=1MHz, POUT per tone=-15dBm, TL =25C, ZS =ZL =50, Different Application Circuit per
Band
18.0
15.0
RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc.
DS111011
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SGL0363Z
Absolute Maximum Ratings
Parameter
Rating
Unit
20
mA
5.5
18
dBm
+150
-40 to +85
+150
1B
Class
MSL
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
25
-10
25C
Isolation
Max Gain
Gain (dB)
-40C
Id (mA)
-5
85C
4
3
20
-15
Gain
15
-20
10
-25
-30
Isolation (dB)
2
1
0
0
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Vd (V)
-35
0
0.5
1.5
2.5
3.5
Frequency (GHz)
DS111011
SGL0363Z
200MHz Application Circuit Data, VS =3.3V, ID =5.2mA
Note: Tuned for NF
2
1.8
1.6
22
85C
Gain (dB)
NF (dB)
1.4
1.2
1
0.8
20
S21_25C
18
S21_-40C
25C
S21_85C
0.6
0.4
170
16
170
180
190
200
210
220
180
230
Frequency (MHz)
200
210
20
18
OIP3 (dBm)
S11
S12
S22
-10
dB
-15
-20
17
16
15
25C
14
-40C
13
-25
85C
12
180
190
200
210
220
11
170
230
180
Frequency (MHz)
IM3 vs. Tone Power @200MHz
P1dB (dBm)
IM3 (dBc)
-50
-60
25C
-40C
85C
-70
-13
-11
DS111011
210
220
230
-9
220
230
25C
-40C
85C
3
2
1
0
-1
-80
-15
200
-40
-17
190
Frequency (MHz)
-30
-19
230
19
-5
-30
170
220
190
Frequency (MHz)
-7
-5
-2
170
180
190
200
210
Frequency (MHz)
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SGL0363Z
450MHz Application Circuit Data, VS =3.3V, ID =5.2mA.
Note: Tuned for NF
S21_25C
85C
1.8
S21_-40C
22
1.6
Gain (dB)
1.4
NF (dB)
24
1.2
1
25C
S21_85C
20
18
0.8
0.6
0.4
420
430
440
450
460
470
16
420
480
430
440
20
460
470
480
19
S11
S12
S22
-10
18
OIP3 (dBm)
-5
dB
450
Frequency (MHz)
Frequency (MHz)
-15
-20
-25
-30
420
430
440
450
460
470
17
16
15
14
-40C
12
85C
11
420
480
25C
13
430
Frequency (MHz)
440
450
460
470
480
470
480
Frequency (MHz)
-30
5
4
P1dB (dBm)
IM3 (dBc)
-40
-50
-60
-17
-15
-13
-11
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-9
-7
1
25C
-40C
-1
-80
-19
25C
-40C
85C
-70
-5
-2
420
85C
430
440
450
460
Frequency (MHz)
DS111011
SGL0363Z
900MHz Application Circuit Data, VS =3.3V, ID =5.2mA
Note: Tuned for NF
85C
1.8
22
1.6
Gain (dB)
1.4
NF (dB)
24
1.2
1
25C
0.8
20
S21_25C
18
S21_-40C
0.6
0.4
870
S21_85C
880
890
900
910
920
16
870
930
880
900
910
920
930
20
19
S11
S12
S22
OIP3 (dBm)
-5
-10
dB
890
Frequency (MHz)
Frequency (MHz)
-15
-20
18
25C
17
-40C
85C
16
15
14
13
-25
12
-30
870
880
890
900
910
920
11
870
930
880
Frequency (MHz)
890
900
910
920
930
Frequency (MHz)
6
5
4
P1dB (dBm)
IM3 (dBc)
-40
-50
-60
25C
-40C
85C
-70
-17
-15
-13
-11
DS111011
-9
-7
2
25C
-40C
85C
-1
-80
-19
-5
-2
870
880
890
900
910
920
930
Frequency (MHz)
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SGL0363Z
Typical Performance - De-embedded S-parameters
S11 Vs.
Frequency
S22 Vs.
Frequency
4 GHz
3 GHz
.2 GHz
.2 GHz
2 GHz
.45 GHz
.9 GHz
.45 GHz
2 GHz
.9 GHz
4 GHz
3 GHz
Note:
S-parameters are de-embedded to the device leads with ZS=ZL=50. De-embedded S-parameters can be downloaded from
our website (www.rfmd.com)
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DS111011
SGL0363Z
Pin
1
Function
RF IN
2, 5
3
4
6
GND
GND
RF OUT/VD
VPC
Description
RF input pin. This pin requires the use of an external DC blocking capacitor and matching components as shown
in the application schematics.
Connect to ground per application circuit drawing. Series feedback used to improve IRL.
Ground active bias tied internally to pin 2 and 5.
RF output and bias pin. Bias should be supplied to this pin through and external RF choke.
VPC is the bias control pin for the active bias network.
900MHz Layout
DS111011
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SGL0363Z
Application Schematic for 200MHz
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DS111011
SGL0363Z
Application Schematic for 450MHz
DS111011
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SGL0363Z
Application Schematic for 900MHz
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DS111011
SGL0363Z
Part Identification Marking
6 5 4
1 2 3
Ordering Information
Part Number
SGL0363Z
SGL0363ZSQ
SGL0363ZSR
DS111011
Description
7" Reel with 3000 pieces
Sample Bag with 25 pieces
7" Reel with 100 pieces
SGL0363ZPCK1
SGL0363ZPCK2
SGL0363ZPCK3
SGL0363ZPCK4
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