4.

3 BJT Models & Circuit Analysis

4.3.1 DC Model: Ebers-Moll Model
Current equations
Equivalent Circuit
4.3.2 Small Signal Model
Generalized Two-Port Model
Hybrid-Pi Model
4.3.3 DC Model: Transport Model
Model Equations
4.3.4 Single Transistor Amplifier Analysis
AC/DC Analysis
Pierret, Chapter 11.1.4, page 403-407
Pierret, Chapter 12.1, page 443-449
Jaeger, Blalock, Chapter 5, page 217-274

4.3.1 Ebers-Moll Model

Static Model for BJT
From static analysis, we obtain the following general
expressions for IE and IC:
IE = IEn + IEp
! D
! D
$
cosh W / LB $ qV /kT
DB
1
E
B
EB
& e
& eqVCB /kT 1
= #qA
nE0 + qA
pB0
1 #qA
pB0
# L
# L
LB
sinh W / LB &%
sinh W / LB &%
E
B
"
"
!#######"#######$
!####"####$
IF0
R IR0

(
(

)
(
)

) (

IC = ICn + ICp
! D
$
! D
cosh W / LB $ qV /kT
DB
1
qVEB /kT
C
B
& e
& e CB 1
= #qA
p
1 #qA
n + qA
pB0
# L B0 sinh W / L &
# L C0
LB
sinh W / LB &%
B
C
B %
"
"
!####"####$
!#######"#######$
F IF0
IR0

) (

(
(

)
) (

This way, the currents are expressed by two coupled junctions

I-V characteristics with saturation currents IF0 and IR0

BJT Modes of Operation

Sze, Fig. 5.7

Ebers-Moll Model

IE = IF0 e

qVEB /kT

IC = F IF0 e

(
(e

1 R IR0 e

qVEB /kT

1 IR0

qVCB /kT

qVCB /kT

)
1)
1

Ebers-Moll Modell
Computer aided circuit analysis programs, such as
SPICE, use these Ebers-Moll equations (or a
modified form) to solve for dc operating point
variables and to construct the BJT device
characteristics
The four parameters IF0, IR0, R, F are obtained from
BJT characterization; actually, only three variables
are required, because F IF0 = R IR0 (see original
current equations)
Alternative static model for BJT: see 4.3.3

4.3.2 Small Signal Equivalent Circuit

Two-Port Model
NPN BJT in common emitter configuration as two-port device:

Pierret, Fig. 12.1

DC voltages and currents: IB, IC, VBE, VCE

Superimposed AC voltages and currents: ib , ic ,v be , v ce

iB (VBE + v be ,VCE + v ce ) = IB (VBE ,VCE ) + ib

iC (VBE + v be ,VCE + v ce ) = IC (VBE ,VCE ) + ic

Two-Port Model (cont.)

Assumption: low frequency, i.e. carrier distributions
can follow the frequency (no capacitance effects)
Note: this is a strong assumption, which is generally not fulfilled!

iB (VBE + v be ,VCE + v ce ) = IB (VBE + v be ,VCE + v ce )

iC (VBE + v be ,VCE + v ce ) = IC (VBE + v be ,VCE + v ce )
Comparing with the previous page, we find for ib:
Taylor series for small vbe ,v ce
!###"###$
ib = IB (VBE + v be ,VCE + v ce ) IB (VBE ,VCE )

IB (VBE ,VCE )
IB (VBE ,VCE )

v be +
v ce
VBE
VCE
V
V
CE

BE

Two-Port Model (cont.)

Analogues, we find for ic:
ic

IC (VBE ,VCE )
I (V ,V )
v be + C BE CE
v ce
VBE
VCE
V
V
CE

BE

This leads to the following general small signal

equivalent circuit:
ib = g11 v be + g12 v ce

ic = g21 v be + g22 v ce

Pierret, Fig. 12.1

Two-Port Model (cont.)

So far, the two-port model is purely mathematical; the
physics lies in the conductances gij! They must be
calculated from appropriate models for IC and IB; in
case of npn BJT:
IB
+IB in : g11
VBE
IC
+IC in : g21
VBE

VCE

IB
g12
VCE

VCE

IC
g22
VCE

VBE

VBE

IC and IB from e.g. static analysis of Chapter 4.2

Two-Port Model (cont.)

Analogous, we obtain in case of a pnp BJT:
IB
+IB out : g11
VEB
IC
+IC out : g21
VEB

VEC

IB
g12
VEC

VEC

IC
g22
VEC

VEB

VEB

adapted from
Pierret, Fig. 12.1

Two-Port Model Active Mode

Assumption: npn transistor in active mode,
i.e. VBE > 0 and VBC < 0
From Ebers-Moll model, we find:

IE IF0 e

qVBE /kT

IC F IF0 e

qVBE /kT

IB = IE IC (1 F ) IF0 e

qVBE /kT

Using these characteristic equations, the

conductances gij are calculated:

Two-Port Model Active Mode (cont.)

%
!
'
IB
q IB IB
g11
=
=
g21 '
'
VBE V
kT IC
CE
'
'
IB
g12
=0
''
VCE V
&
BE
'
IC
q IC
'
g21
=
'
VBE V
kT
CE
'
'
IC
g22
=0
'
VCE V
'(
BE
=1
0

Hybrid- Model

Hybrid-Pi model is most

frequently used model for
performing BJT small signal
analysis
Hybrid: combination of
resistances and
conductances
: -arrangement of elements
Hybrid- equivalent circuits
a) Simplified low-frequency
b) Complete low-frequency
c) High-frequency
Pierret, Fig. 12.2

Simplified Hybrid- Model

1
ib = v be
r
ic = gm v be
Equivalent to two-port model simplification for active mode
By comparison, one obtains for the input resistance r and the
transconductance gm:
1
$
'
IB
kT IC 1 0
1
Note: r and gm depend
&
)
r = g11 =
=
=
=
&
)
V
q IB IB gm gm
on the DC operating
% BE VCE (
point!
I
qI
gm = g21 = C
= C
VBE V
kT
CE

Complete Hybrid- Model

Implementing base-width modulation and allowing more precise

analysis
Additional circuit components:
Output resistance r0
Feedthrough resistance r
Circuit parameters can be related to two-port parameters:

gm = g21 g12 r0 = 1/ (g22 + g12 ) r = 1/ (g11 + g12 ) r = 1/ g12

High-Frequency Hybrid- Model

Model valid for frequencies up to about 500 MHz (at higher frequencies
delays in signal propagation have to be accounted for)
Additional circuit components:
Parasitic series resistances re, rb, and rc
Junction capacitances Ccb, Ceb
Reverse-biased C-B junction: Ccb is primarly junction C
Forward-biased E-B junction: Ceb includes junction and diffusion C

4.3.3 BJT Transport Model

Jaeger, Blalock, Fig. 5.2

Goal: Development of (simple) mathematical model describing

the BJT I-V characteristic
Assumption: npn transistor with currents and voltages defined as
above
Model construction by superposition of currents

Forward Characteristic (VBC = 0)

Base-emitter voltage VBE establishes

forward-current flow through emitterbase junction with two components:
The larger component, the forwardtransport current IF, consists of
electrons injected into the base,
diffusing across it and swept into the
collector (note: current flow is other
way round!); this component
constitutes the collector current IC
qV /kT
IC = IF = IS "#e BE 1$%

The smaller current across the emitter

base junction forms the base current
IB
I
I
qV /kT
IB = F = S #$e BE 1%&
F F

Jaeger, Blalock, Fig. 5.3

Transistor saturation current IS
Typ. 10-18 IS 10-9 A
Forward common-emitter
current gain F
Typ. 20 F 500

Forward Characteristic (VBC = 0)

Using KCL, we calculate the emitter current IE = IC + IB
"
" F + 1% qVBE /kT
IS % qVBE /kT
)
+
)e
IE = $ IS + ' *e
1, = IS $
1+,
'
*
F &
#
# F &
!
#"#
$
F1

with the forward common-base current gain F

F
(typ. 0.95 F 1.0)
= F
=
F

F +1

1 F

Note: F is our previous common-emitter current gain 0; F is

our previous common-base current gain 0
We also find the following three relations

IC = F IB IC = F IE IE = F +1 IB

Reverse Characteristic (VBE = 0)

Base-collector voltage VBC establishes

forward-current flow through collectorbase junction with two components:
The larger component, the reversetransport current IR, consists of
electrons injected into the base from
the collector, diffusing across it and
swept into the emitter (note: current
flow is other way round!); this
component constitutes now the
collector current IE
qV /kT
IE = IR = IS "#e BC 1$%
The smaller current across the
collector base junction forms again
the base current IB

IB =

I
IR
qV /kT
= S #$e BC 1%&
R R

Jaeger, Blalock, Fig. 5.4

Reverse common-emitter
current gain R
Typ. 0 R 20

Reverse Characteristic (VBE = 0)

Using KCL, we calculate the emitter current IC = IE - IB
#
# R + 1& qVBC /kT
IS & qVBC /kT
)
+
)e
IC = % IS ( *e
1, = IS %
1+,
(
*
R '
$
$ R '
!
#"#
$
R1

with the reverse common-base current gain R

R
(typ. 0 R 0.95)
= R
=
R

R +1

1 R

Super-positioning the solutions for the forward and reverse

characteristics yields the complete Transport Model Equations

Transport Model Equations

for NPN BJT
"
IS % qVBE /kT
= $ IS + ' )*e
1+,
F &
#

IE,forward
//
IS qVBE /kT
qVBC /kT
qVBE /kT
)
+
)e
I
=
I
e

e
+
1+,
. E S*
*
,
!###"###$ F
qVBC /kT
/
)
+
IE,reverse = IS *e
1,
IT
/0
qV /kT
IC,forward = IS )*e BE 1+,
//
IS
qVBC /kT
qVBC /kT
qVBE /kT
)
+
)
I
=
I
e

e
1+,
.
"
IS % qVBC /kT
C
S *
,
*
!###"###$ R
IC,reverse = $ IS ' )*e
1+, /
IT
R &
#
/0
I
qV /kT
IB,forward = S )*e BE 1+, /
F
IS qVBE /kT
IS
/
qVBC /kT
)
)
+
I
=
e

1
+
e
1+,
. B
*
,
*
F
R
IS
qVBC /kT
/
)
+
IB,reverse =
e
1,
*
/
R
0

Transport Model Equations

for PNP BJT
Jaeger, Blalock, Fig. 5.6

Exchange subscript indices

of voltages:
VBE becomes VEB
VBC becomes VCB

I
qV /kT
qV /kT
qV /kT
IE = IS "#e EB e CB $% + S "#e EB 1$%

I
qV /kT
qV /kT
qV /kT
IC = IS "#e EB e CB $% S "#e CB 1$%

IS " qVEB /kT $ IS " qVCB /kT $

IB = #e
1% + #e
1%
F
R

Transport Model
Equivalent Circuit
NPN

PNP

Jaeger, Blalock, Fig. 5.8

Diode currents form the two base current components

Current being transported completely across the base region of
the transistor IT is modeled by (voltage controlled) current
source

Transport Model Simplifications

Cutoff Region: VBE < 0 V and VBC < 0 V
I
" qV /kT
qV /kT %
IE = IS $ e BE e BC ' + S
#
&

IS
" qVBE /kT %
e
1
=

$#
'&

I
" qV /kT
qV /kT %
IC = IS $ e BE e BC ' S
#
&

" qVBC /kT % IS

1' =
$# e
&

IB =

IS " qVBE /kT % IS " qVBC /kT %

IS IS
e
1
+
e
1
=

$
'
$
'
#
&
#
&
F
R
F R

Two reverse
biased junctions
with small reverse
currents flowing
Cutoff region is
open switch
Jaeger, Blalock, Fig. 5.14

Transport Model Simplifications

Forward Active Region: VBE > 0 V and VBC < 0 V
I
I
I
I
" qV /kT
qV /kT %
qV /kT
qV /kT
qV /kT
IE = IS $e BE e BC ' + S "#e BE 1%& = S "#e BE %& S S "#e BE %&
#
&
F
F F
F
I
" qV /kT
qV /kT %
IC = IS $e BE e BC ' S
#
&

" qVBC /kT %

"eqVBE /kT % + IS I "eqVBE /kT %
e
1
=
I
S#
$#
'& S #
&
&
R
R

IB =

IS " qVBE /kT % IS " qVBC /kT % IS " qVBE /kT % IS

IS
IS " qVBE /kT %
e
1
+
e
1
=
e

e
$
'
#
&
#
&
#
&
#
&
F
R
F
R F F

Jaeger, Blalock, Fig. 5.17

Transport Model Simplifications

Reverse Active Region: VBE < 0 V and VBC > 0 V
I
" qV /kT
qV /kT %
IE = IS $ e BE e BC ' + S
#
&

" qVBE /kT %

"eqVBC /kT % IS I "eqVBC /kT %
e
1
=
I
S#
S#
$#
'&
&
&
F
F

*
IS " qVBC /kT %
IS - " qVBC /kT % IS
IS " qVBC /kT %
" qVBE /kT
qVBC /kT %
IC = IS $ e
e

e
1& = ,IS + / #e
& + #e
&
#
&' #

+
R
R.
R
R
IB =

IS " qVBE /kT % IS " qVBC /kT % IS " qVBC /kT % IS

IS
IS " qVBC /kT %
e
1
+
e
1
=
e

e
$
'
#
&
#
&
#
&
#
&
F
R
R
R F R

Jaeger, Blalock, Fig. 5.21

Transport Model Simplifications

Saturation Region: VBE > 0 V and VBC > 0 V
IS ! qVBC /kT #
qVBE /kT #
!
IC = IS "e
$ "e
$
R

IS ! qVBE /kT # IS ! qVBC /kT #

IB = "e
$ + "e
$
F
R

(
*
*
)
*
*
+

VCEsat = VCE = VBE VBC

!
#
IC
, 1+
(R +1)IB kT , 1
=
ln
IC
q , R
1
,

I
"
$
FB
!###
#"####
$
I
for IB > C
F

Two forward
biased junctions
Saturation region
is closed switch

Jaeger, Blalock, Fig. 5.24

4.3.4 Single Transistor Amplifier Analysis

BJT Common-Emitter Amplifier

Goal: Perform AC and DC

analysis of single transistor
circuit

DC Analysis:
1. Find equivalent circuit by
replacing all capacitors with
open circuits and inductors
with short circuits
2. Find the Q-point from the
DC equivalent circuit using
appropriate large-signal
model for the transistor

BJT DC Analysis
Four resistor bias network for BJT
DC Analysis
1. Split power supply into two equal
voltage sources
2. Simplify base-bias network by
Thvenin equivalent network

30 k

10 k

4.3 k

1.3 k

= 12 V

1.3 k

BJT DC Analysis
Base-Bias Thvenin Equivalent

Thvenin equivalent circuit: any

combination of batteries and resistances
with two terminals can be replaced by a
single voltage source VEQ and a single
series resistor REQ
The value of VEQ is the open circuit
voltage at the terminals
R1
10
VEQ =
VCC =
12V = 3V
R1 + R2
40

30 k

10 k

The value of REQ is VEQ divided by the

current with the terminals short circuited

REQ =

VEQ
(VCC / R2 )

= R2

R1
10
= 30
k = 7.5 k
R1 + R2
40

7.5 k
3V

BJT DC Analysis

Common-emitter gain: F = 100

Assumption: Active Mode
KVL for loop 1:
VEQ = REQIB + VBE + REIE "
$ IB = 16.6 A
VBE = 0.7 V
$
# IE = 1.67 mA
IE = (F +1) IB
$
IC = 1.66 mA
$
IC = F IB
%

KVL for loop 2:

VCC = RCIC + VCE + REIE "$
# VCE = 2.7 V
IC = F IB
$%
VBC = (VCE VBE ) = 2 V
Reverse biased C-B junction
consistent with the assumption
of npn BJT in active mode
See also Jaeger, Blalock, 5.11.1

VEQ = 3 V
REQ = 7500
RE = 1300
RC = 4300
How does the IC(VCE) plot
look like?

BJT AC Analysis

Find AC equivalent circuit by

replacing all capacitors by
short circuits and all
inductors by open circuits
replacing DC voltage
sources by ground
connections
replacing DC current
sources by open circuits
Replace transistor by its smallsignal model (Hybrid-Pi)
Simplify the resulting AC circuit
as much as possible
Use Thvenin or Norton
equivalent where necessary

BJT AC Analysis
Base-Bias Thvenin Equivalent

The value of Vth is the open

circuit voltage at the terminals

Vth =

RB
V = 0.88 VS
RS + RB S

The value of Rth is Vth divided

by the current with the
terminals short circuited

Rth =

Vth
RB
= RS
(VS / RS )
RS + RB

7.5
k
8.5
= 0.88 k
=

BJT AC Analysis
Transistor Equivalent Circuit

Replace transistor with smallsignal model

Hybrid-Pi model with
input resistance r,
voltage controlled current
source gm vbe and
output resistor ro
How do you calculate the
transistor model parameters?

r = g111 =

0
gm

gm = g21 =

q IC
kT
1
r =g12

ro = (g22 + g12 )1

g1

22

VA
IC

BJT AC Analysis
Transistor Equivalent Circuit

Further simplify
equivalent circuit

RL = RC ! R3 ! ro
1

! 1
1 1$
=# +
+ &
R
R
ro %
" C
3
Rth = 880
v th = 0.88 v S
r = g111 =

0
gm

gm = g21 =

q IC
kT

Assume: VA = 75 V

1
r =g12

ro = (g22 + g12 )1

g1

22

VA
IC

BJT AC Analysis
Transistor Equivalent Circuit

And now calculate.

qI
gm = g21 = C = 0.064 S
kT

r = g111 = 0 = 1566
gm
1
r =g12

ro = (g22 + g12 )1

g1

22

VA
= 45.2 k
IC
1

( 1
1 1+
RL = RC ! R3 ! ro = * +
+ - = 3778
R
R
ro ,
) C
3
Rth = 880
v th = 0.88 v S

And what about the

frequency dependence?

v be = v th

Verification with SPICE

See Chapter 4.4

r
r
= 0.88
v S = 0.56 v S
r + Rth
r + Rth

v o = RLgmv be = 136.2 v S
A = v o / v S = 136.2

BJT Analysis
Bringing in the Physics
In the previous example, we assumed that F = 100 is known
How can we calculate F = 0 from the npn transistor geometry
and material properties?

0 =

1
2

"D W N % 1 " W %
B
$ E
'+ $ '
# DB LE NE & 2 # LB &

for the case of W LB

4.4 SPICE Analysis

4.4.1 SPICE Model for BJT
4.4.2 Implemented Non-Idealities
Early-Effect and Early Voltage
Series Resistances
Base Transit Time
Capacitances
4.4.3 Sample Problem: Putting It All Together
Jaeger, Chapter 5, page 217-274

4.4.1 SPICE Model Equations

Simplified Collector/Base Current Equations
(iF iR ) iR

iRG
KBQ BR
i
i
iB = F R + iFG + iRG
BF BR
iC =

NPN Transistor

Forward/Reverse Transport Current

qv /NFkT
iF = IS #$e BE
1%&
qv /NRkT
iR = IS #$e BC
1%&

Space-charge region currents

associated with B-E and B-C junctions
qv /(NEkT)
iFG = ISE #$e BE
1%&
qv /(NCkT)
iRG = ISC #$e BC
1%&

Jaeger, Blalock, Fig. 5.30b

SPICE Model Equations (cont.)

KBQ term to model Early effect as well as knee current
NK

'
! i
iR $*
F
1+ )1+ 4 #
+
&,
IKF
IKR
)
"
%,+
1 (
KBQ =
v
v
2
1+ CB + EB
VAF VAR

Substrate junction current iS = ISS #$eqv

Capacitances

CBE =

CJS =

CJS
MJS

" v
%
SUBC
$1
'
VJS
#
&

SUB /(NSkT)

1%&

substrate junction
capacitance

qiF
qiR
CJE
CJC
TF +
and
C
=
TR
+
BC
MJE
MJC
NE
kT#$ #
NC
kT#$ #
!#"
!#"
v BE &
v BC &
%1
(
%1
(
diffusion
diffusion
capacitance
capacitance
PHIE
PHIC
$
'
$
'
!##"##
$
!##"##
$
junction capacitance

junction capacitance

With many, many Parameters

Parameter

Name

Default

Typical Value

Saturation current

IS

10-16 A

3 10-17 A

Forward current gain

BF

100

100

Forward emission coefficient

NF

1.03

Forward Early voltage

VAF

75 V

Forward knee current

IKF

0.05 A

Reverse knee current

IKR

0.05 A

Reverse current gain

BR

0.5

Reverse emission coefficient

NR

1.05

Base resistance

RB

250

Collector resistance

RC

50

Emitter resistance

RE

Forward transit time

TF

0.15 ns

Reverse transit time

TR

15 ns

Parameter

Name

Default

Typical Value

B-E leakage saturation current

ISE

1 pA

B-E leakage emission coefficient

NE

1.5

1.4

B-E junction capacitance

CJE

0.5 pF

B-E junction potential

PHIE

0.8 V

0.8 V

B-E grading coefficient

ME

0.5

0.5

B-C leakage saturation current

ISC

1 pA

B-C leakage emission coefficient

NC

1.5

1.4

B-C junction capacitance

CJC

1 pF

B-C junction potential

PHIC

0.75 V

0.7 V

B-C grading coefficient

MC

0.33

0.33

Substrate saturation current

ISS

1 fA

Substrate emission coefficient

NS

C-S junction capacitance

CJS

3 pF

C-S junction potential

VJS

0.75 V

0.75 V

C-S grading coefficient

MJS

0.5

SPICE Model for NPN BJT

Q2N2222

BJT model included with SPICE student version with extensive

parameter list
How does the use of this BJT change the high-frequency
characteristics of our common-emitter amplifier circuit?

And for a simple BJT.

Parameter

Name

Default

Typical Value

Saturation current

IS

10-16 A

3 10-17 A

Forward current gain

BF

100

100

Forward Early voltage

VAF

75 V

(iF iR )
iC =
iR
KBQ
iF
iB =
iR
BF

qv /kT
iF = IS #$e BE 1%&

KBQ =

qv /kT
iR = IS #$e BC 1%&

iFG = iRG = iS = 0

1
v
1+ CB
VAF

CBE = CBC = CJS

What are some of the non-idealities described in the SPICE model?

Real BJT Characteristics

Common-Base
Configuration

Sze, Fig. 5.8

Common-Emitter
Configuration

Breakdown

Base Width
Modulation

Sze, Fig. 5.10

4.4.2a Early Effect & Early Voltage

Early Effect: in real BJTs in
common-emitter
configuration, the collector
current does not saturate for
a given IB, but increases
with increasing VCE
Slope of output
characteristic is not zero but
greater than zero
If output characteristic
curves are extrapolated to
zero collector current, the
curves all intersect at a
common point VCE = VA,
the so-called Early voltage

Jaeger, Blalock, Fig. 5.28

Modeling the Early Effect

Modified Transport Model for forward-active region of
BJT:
! V #
qV
/kT
IC = IS !"e BE #$%1+ CE &
" VA $
! V #
F = F0 %1+ CE &
" VA $
IS ! qVBE /kT #
IB =
e
"
$
F0
F0 is the forward current gain extrapolated to VCE = 0

Origin of Early Effect

Base Width Modulation
Common-Emitter Configuration
Common-emitter characteristic:
IC = 0 IB + ICE0
0 =

1
# DE W NB & 1 # W &
%
(+ % (
$ DB LE NE ' 2 $ LB '

Increasing VCE increasing VBC decreasing W

increasing current gain 0 sloped IC = f(VEC)

In case of common-base configuration, W has little

influence on the current gain 0 1

4.4.2b Series Resistances

Assumption in ideal BJT:

1-D device structure
Reality: 3-D device structure
Base and collector contacts are
away from actual active base
and collector regions, resulting
in considerable series
resistances
In addition, narrow base region
results in a non-negligible
series resistance rB, which
lowers the actual voltage
applied to the E-B junction:

VEB,real = VEB,applied IB rB
Pierret, Fig. 11.11

4.4.2c Base Transit Time

To turn ON the BJT, minority carrier

charge must be introduced into the base
to establish a carrier gradient
The forward transit time represents the
time constant associated with storing the
required charge
Q
F =
IT
The base transit time can be viewed as
average time required for a carrier to
diffuse across the base
W2
qW 2
F =
=
2 Dn 2 kT n
Base transit time provides upper limit on
BJT operating frequency

f 2 F

How to increase f? smaller W or larger

(i.e. npn instead pnp)

Jaeger, Blalock, Fig. 5.26

4.4.2d Capacitances
Capacitances (junction and diffusion) represent the
high-frequency limitation of the BJT
Diffusion capacitance CD: associated with stored
minority carrier charge in the base
CD =

dQ
dVBE

=
Qpoint

qIC
F
kT

Junction capacitance CJ: associated with majority

carrier oscillations at the edges of depletion region of
reverse biased junction (B-C in case of forward active
mode)

4.4.3 Sample Problem

BJT Common Emitter Amplifier
Our old Problem:
see Chapter 4.3.4:

Q-Point (DC) Analysis I

SPICE results:
VBE = 0.786 V
IC = 1.595 mA
IB = 15.95 A
Compare to our
hand calculation in
Chapter 4.3

Q-Point (DC) Analysis II

Based on Full Circuit

Note: the unrealistically large capacitances..

Small Signal (AC) Analysis

AC Sweep: Frequency Transfer

Gain: |A| 145