FQP11N40C/FQPF11N40C: 400V N-Channel MOSFET

FQP11N40C/FQPF11N40C
400V N-Channel MOSFET

Features
Description
10.5 A, 400V, RDS(on) =
0.5 @VGS = 10 V
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe,
DMOS technology.
Low gate charge ( typical 28 nC)

Low Crss ( typical 85pF)
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Fast switching
100% avalanche tested
Improved dv/dt capability
D
!
G!
TO-220
G DS
FQP Series
TO-220F
GD S
FQPF Series
Absolute Maximum Ratings

Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
FQP11N40C
FQPF11N40C
400
Units
V
- Continuous (TC = 25C)
10.5
10.5 *
- Continuous (TC = 100C)
6.6
6.6 *
42 *
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
IAR
- Pulsed
(Note 1)
42
30
Single Pulsed Avalanche Energy
(Note 2)
360
mJ
Avalanche Current
(Note 1)
11
EAR
Repetitive Avalanche Energy
(Note 1)
13.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25C)

- Derate above 25C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds
135
44
1.07
0.35
W/C
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FQP11N40C
FQPF11N40C
Units
0.93
2.86
C/W
RJC
Thermal Resistance, Junction-to-Case
RCS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
C/W
RJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
C/W
2005 Fairchild Semiconductor Corporation
FQP11N40C/FQPF11N40C Rev. C
www.fairchildsemi.com
FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
QFET
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQP11N40C
FQP11N40C
TO-220
--
--
50
FQPF11N40C
FQPF11N40C
TO-220F
--
--
50
Electrical Characteristics
Symbol
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
400
--
--
--
V/C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 A
BVDSS/
TJ
Breakdown Voltage Temperature

Coefficient
ID = 250 A, Referenced to 25C
--
0.54
IDSS
Zero Gate Voltage Drain Current
VDS = 400 V, VGS = 0 V
--
--
VDS = 320 V, TC = 125C
--
--
10
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 A
2.0
--
4.0
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 5.25 A
--
0.43
0.53
gFS
Forward Transconductance
VDS = 40 V, ID = 5.25 A
--
7.1
--
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
840
1090
pF
--
250
325
pF
--
85
110
pF
--
14
40
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 200 V, ID = 10.5 A,

RG = 25
(Note 4, 5)
VDS = 320 V, ID = 10.5 A,

VGS = 10 V
(Note 4, 5)
--
89
190
ns
--
81
170
ns
--
81
170
ns
--
28
35
nC
--
--
nC
--
15
--
nC
--
--
10.5
Drain-Source Diode Characteristics and Maximum Ratings

IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
42
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 10.5 A
--
--
1.4
trr
Reverse Recovery Time
--
290
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 10.5 A,
dIF / dt = 100 A/s
--
2.4
--
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.7 mH, IAS = 10.5A, VDD = 50V, RG = 25 , Starting TJ = 25C
3. ISD 10.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test : Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
ID, Drain Current [A]
10
150C
10
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10
-55C
25C
0
10
Notes :
1. 250s Pulse Test
2. TC = 25C
Notes :
1. VDS = 40V
2. 250s Pulse Test
-1
-1
10
10
10
10
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperatue
VGS = 10V
IDR, Reverse Drain Current [A]
RDS(ON) [],
Drain-Source On-Resistance
2.0
1.5
1.0
VGS = 20V
0.5
Note : TJ = 25C
10
10
150C
Notes :
1. VGS = 0V
25C
2. 250s Pulse Test

-1
10
15
20
25
30
35
10
40
0.2
0.4
Figure 5. Capacitance Characteristics

2000
1.2
1.4
12
Crss = Cgd
Ciss
1200
Coss
1000
800
600
VDS = 100V
10
VGS, Gate-Source Voltage [V]
1400
Capacitance [pF]
1.0
Coss = Cds + Cgd
1600
Notes ;
1. VGS = 0 V
Crss
400
2. f = 1 MHz
200
0
-1
10
0.8
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted)
1800
0.6
VSD, Source-Drain voltage [V]
VDS = 250V
8
VDS = 400V
6
2
Note : ID = 10.5A
0
0
10
10
10
15
20
25
30
QG, Total Gate Charge [nC]
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation

vs. Temperature
Figure 8. On-Resistance Variation

vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
Notes :
1. VGS = 0 V
0.9
2. ID = 250A
0.8
-100
-50
50
100
2.5
2.0
1.5
1.0
Notes :
1. VGS = 10 V
0.5
2. ID = 5.25 A
150
0.0
-100
200
Figure 9-1. Maximum Safe Operating Area

of FQP3N50C
50
100
10 s
10 s
100 s
1 ms
200
Operation in This Area

is Limited by R DS(on)
10
10
150
Figure 9-2. Maximum Safe Operating Area

of FQPF3N50C
Operation in This Area

is Limited by R DS(on)
10
-50
TJ, Junction Temperature [C]
TJ, Junction Temperature [C]
10 ms
100 ms
DC
0
10
Notes :
1. TC = 25C
100 s
1
1 ms
10
10 ms
100 ms
DC
10
Notes :
1. TC = 25C
2. TJ = 150C
2. TJ = 15C
3. Single Pulse
3. Single Pulse
-1
-1
10
10
10
10
10
10
10
10
10
10
Figure 10. MaximumDrain Current

12
10
0
25
50
75
100
125
150
TC, Case Temperature [C]
Typical Performance Characteristics (Continued)
Typical Performance Characteristics (Continued)

Figure 11-1. ransient Thermal Response Curve of FQP3N50C
10
0 .2
10
N o te s :
1 . Z J C ( t) = 0 .9 3 C /W M a x .
0 .1
-1
2 . D u ty F a c to r , D = t 1 /t 2
0 .0 5
3 . T J M - T C = P D M * Z J C ( t)
0 .0 2
PDM
0 .0 1
JC
(t), Thermal Response
D = 0 .5
s i n g le p u ls e
10
t1
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t2
10
10
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Z JC(t), Thermal Response
Figure 11-2. ransient Thermal Response Curve of FQPF3N50C
10
D = 0 .5
0 .2
N o te s :
1 . Z J C( t) = 2 .8 6 /W M a x .
2 . D u t y F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z J C( t)
0 .1
0 .0 5
10
-1
0 .0 2
0 .0 1
10
t1
s in g le p u ls e
-2
10
PDM
-5
10
-4
10
-3
10
-2
10
-1
t2
10
10
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50K
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
tp
VDS (t)
VDD
DUT
10V
ID (t)
tp
Time
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width

D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Mechanical Dimensions
TO - 220
Dimensions in Millimeters
(Continued)
3.30 0.10
TO-220F
10.16 0.20
2.54 0.20
3.18 0.10
(7.00)
(1.00x45)
15.87 0.20
15.80 0.20
6.68 0.20
(0.70)
0.80 0.10
)
0
(3
9.75 0.30
MAX1.47
#1
+0.10
0.50 0.05
2.54TYP
[2.54 0.20]
2.76 0.20
2.54TYP
[2.54 0.20]
9.40 0.20
4.70 0.20
0.35 0.10
Dimensions in Millimeters
Mechanical Dimensions
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Definition of Terms
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Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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Not In Production
This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
10
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FQP11N40C/FQPF11N40C

400V N-Channel MOSFET

10.5 A, 400V, RDS(on) =

Low gate charge ( typical 28 nC)

Absolute Maximum Ratings

- Continuous (TC = 25C)

- Continuous (TC = 100C)

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (TC = 25C)

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

* Drain current limited by maximum junction temperature

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

2005 Fairchild Semiconductor Corporation

FQP11N40C/FQPF11N40C 400V N-Channel MOSFET

TC = 25C unless otherwise noted

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

ID = 250 A, Referenced to 25C

Zero Gate Voltage Drain Current

VDS = 400 V, VGS = 0 V

VDS = 320 V, TC = 125C

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

Gate Threshold Voltage

VDS = VGS, ID = 250 A

Reverse Transfer Capacitance

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

VDD = 200 V, ID = 10.5 A,

VDS = 320 V, ID = 10.5 A,

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

FQP11N40C/FQPF11N40C 400V N-Channel MOSFET

Package Marking and Ordering Information

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

ID, Drain Current [A]

ID, Drain Current [A]

VGS, Gate-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

IDR, Reverse Drain Current [A]

2. 250s Pulse Test

ID, Drain Current [A]

Figure 5. Capacitance Characteristics

VGS, Gate-Source Voltage [V]

Coss = Cds + Cgd

Figure 6. Gate Charge Characteristics