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1. In a degenerate n-type
semiconductor the fermilevel lies
(A) within the conduction band
(B) below the conduction band
(C) within the valance band
(D) above the valance band
2. The threshold voltage of
enhancement mode MOSFET can
be adjusted by adjusting the
(A) channel doping
(B) channel length
(C) source doping
(D) drain doping
21. Assertion (A) : JFET is used in
automatic gain control circuits.
36. List I
List
II
(a) p-n
junctiondiode(i)Referencevoltage
(b) Zener diode(ii)Pinch-off
(c) MOSFET
(iii)Negative
resistance
(d) Tunneldiode(iv) Diffusion
Codes :
(a) (b) (c) (d)
(A) (iv) (i) (ii) (iii)
(B) (i) (ii) (iii) (iv)
(C) (iii) (iv) (ii) (i)
(D) (iv) (iii) (i) (ii)
Dec 2010
1. Which diode exhibits negative
resistance characteristics ?
(A) Zener diode
(B) Tunnel diode
(C) Schottky diode
june 2011
21. Assertion (A) : The ion
implantation is done by
bombarding ions to the
semiconductor surface.
Reason (R) : The doping is
changed by ion implantation.
dec 2011
21. Assertion (A) : At room
temperature, the fermi level in a ptype semiconductor lies nearer to
the valence band whereas that in
n-type semiconductor lies nearer to
the conduction band.
Reason (R) : At room
temperature, the p-type
semiconductor has majority charge
carrier are holes whereas the ntype semiconductor, the majority
charge carriers are electrons.
35. Consider the following
devices :
I. BJT in CB mode
II. BJT in CE mode
III. JFET
IV. MOSFET
The correct sequence of these
devices in increasing order of their
input impedance is
(A) I, II, III, IV
(B) II, I, III, IV
(C) II, I, IV, III
(D) I, III, II, IV
38. List I
List II
(a) BJT(i) Voltage controlled
negative resistance
(b) MOSFET
(ii) High current
gain
(c) Tunnel diode (iii) Voltage
regulation
(d) Zener diode (iv) High input
impedance
Codes :
(a) (b) (c) (d)
(A) (ii) (iv) (i) (iii)
(B) (i) (ii) (iii) (iv)
(C) (ii) (i) (iv) (iii)
(D) (iv) (i) (ii) (iii)
june 2012
1. In a JFET the change in drain
current is due to the applied
(A) Electric field between S and D
(B) Electric field between G and S
(C) Magnetic field between S and D
(D) Magnetic field between G and S
2. The increase in temperature, the
electrical conductivity would
(A) increase in metals as well as
increase in semiconductors
(B) increase in metals but decrease
in semiconductors
(C) decrease in metals but increase
in semiconductors
(D) decrease in metals as well as in
semiconductors
22. Assertion (A) : The voltagecurrent
characteristic of tunnel diode
exhibits dynamic negative
resistance region.
Reason (R) : The negative
resistance occurs, therefore,
tunnel diode behaves as low
power oscillating device.
1. What is the resistivity of intrinsic
Germanium at 300 K, given that
its
carrier concentration is 2.5 1013
cm3
and electron and hole mobility is
3,800 cm2/vs and 1,800 cm2/vs
respectively ?
(A) 0.446 cm (B) 44.6 cm
(C) 0.022 cm (D) 22.2 cm
Dec 2012
1. For a JFET IDSS = 8 mA and peak
voltage Vp = 8V, what will be the
drain current for gate to source
voltage of 2V ?
(A) 4.5 mA (B) 8 mA
(C) 16 mA (D) 12 mA