Lab Manual - Basic Electronics

Navrachana University
Basic Electronics
BASIC ELECTRONICS
Laboratory Manual
B. Tech. 4th Semester (MECH)
Mechanical Engineering
School of Engineering and Technology
Vadodara
MECHANICAL ENGINEERING
Basic Electronics
BASIC ELECTRONICS
Laboratory
Name: ________________________________________________________________
Class: B. Tech. ________Semester_____
Enroll No: _____________________________
Academic Year: __________ - __________
Mechanical Engineering
SCHOOL OF ENGINEERING AND TECHNOLOGY
NAVRACHANA UNIVERSITY
VADODARA
Basic Electronics
NAVRACHANA UNIVERSITY
SCHOOL OF ENGINEERING AND TECHNOLOGY
OF
CERTIFICATE
This is to certify that Mr./Ms.____________________________________________ of B.Tech 3rd Semester

(Mechanical Engineering), Enroll No. _____________ has been found satisfactory in the continuous
Internal Evaluation of Laboratory in the Basic Electronics Laboratory for the Academic year
_________-_________.
Date:
___________________________________
Course In-charge
Vadodara.
Basic Electronics
AIM OF EXPERIMENTS
1.
TO STUDY THE P-N JUNCTION DIODE CHARACTERISTICS

UNDER FORWARD AND REVERSE BIAS.
2.
TO STUDY ZENER DIODE CHARACTERISTICS UNDER FORWARD AND

REVERSE BIAS.
3.
TO STUDY THE COMMON EMITTER CHARACTERISTICS OF BJT.
4.
TO STUDY THE COMMON BASE CHARACTERISTICS OF BJT.
5.
TO STUDY THE COMMON COLLECTOR CHARACTERISTICS OF BJT.
6.
TO STUDY OF THE CHARACTERISTICS OF FIELD EFFECT TRANSISTOR.
7.
TO STUDY CLIPPER CIRCUTS WAVEFORMS.
8.
TO STUDY CLAMPER CIRCUTS WAVEFORMS.
9.
TO STUDY RC PHASE SHIFT OSCILLATOR AND ITS CHARACTERISTICS.
Basic Electronics
INDEX
Exp.
No.
Date of Exp.
Aim of Experiment
Page
No.
Date of
Submission
Grade
/Marks
Faculty
Signature
10
Basic Electronics
EXPERIMENT NO: 01
P-N JUNCTION DIODE CHARACTERISTICS
AIM:
1.
2.
To observe and draw the Forward and Reverse bias V-I Characteristics of a P-N
Junction diode.
To calculate static and dynamic resistance in forward and reverse Bias Conditions.
APPARATUS:
Bread board, connecting wires
1.
2.
3.
4.
5.
6.
P-N Diode IN4007

Regulated Power supply (0-30V)
Resistor 1K
Ammeter (0-20 mA)
Ammeter (0-200A)
Voltmeter (0-20V)
1 No.
1 No.
1 No.
1 No
1 No.
2 No.
THEORY:
A P-N junction diode conducts only in one direction. The V-I characteristics of the diode are curve between
voltage across the diode and current flowing through the diode. When external voltage is zero, circuit is
open and the potential barrier does not allow the current to flow. Therefore, the circuit current is zero.
When P-type (Anode) is connected to +ve terminal and n- type (cathode) is connected to ve terminal of
the supply voltage is known as forward bias.
The potential barrier is reduced when diode is in the forward biased condition. At some forward voltage,
the potential barrier altogether eliminated and current starts flowing through the diode and also in the
circuit. Then diode is said to be in ON state. The current increases with increasing forward voltage.
When N-type (cathode) is connected to +ve terminal and P-type (Anode) is connected ve terminal of the
supply voltage is known as reverse bias and the potential barrier across the junction increases. Therefore,
the junction resistance becomes very high and a very small current (reverse saturation current) flows in
the circuit. Then diode is said to be in OFF state. The reverse bias current is due to minority charge carriers.
Basic Electronics
CIRCUIT DIAGRAM:
A) Forward bias:
B) Reverse Bias:
EXPECTED GRAPH:
Basic Electronics
OBSERVATIONS:
A) FORWARD BIAS:
S.NO.
Applied
Voltage(V)
Forward
Voltage(Vf)
Forward
Current(If(mA))
Reverse
Voltage(VR)
Reverse
Current(IR(A))
B) REVERSE BIAS:
S.NO.
Applied
Voltage(V)
CALCULATIONS:
Calculation of Static and Dynamic Resistance for a given diode.
In forward bias condition:
Static Resistance, RS = Vf / If =
Dynamic Resistance, Rd = Vf / If =
In reverse bias condition:
Static Resistance, RS = VR/ IR =
Dynamic Resistance, Rd = VR / IR =
Basic Electronics
PROCEDURE:
A) FORWARD BIAS:
1.
2.
3.
4.
5.
6.
Connections are made as per the circuit diagram.

For forward bias, the RPS +ve is connected to the anode of the diode and RPS ve is
connected to the cathode of the diode
Switch on the power supply and increase the input voltage (supply voltage) in steps of 0.1V
Note down the corresponding current flowing through the diode and voltage across the
diode for each and every step of the input voltage.
The reading of voltage and current are tabulated.
Graph is plotted between voltage (Vf) on X-axis and current (If) on Y-axis.
B) REVERSE BIAS:
1.
2.
3.
4.
5.
6.
Connections are made as per the circuit diagram

For reverse bias, the RPS +ve is connected to the cathode of the diode and RPS
ve is connected to the anode of the diode.
Switch on the power supply and increase the input voltage (supply voltage) in
steps of 1V.
Note down the corresponding current flowing through the diode voltage across the diode
for each and every step of the input voltage.
The readings of voltage and current are tabulated.
Graph is plotted between voltage (VR) on X-axis and current (IR) on Y-axis.
PRECAUTIONS:
1.
2.
All the connections should be correct.

Parallax error should be avoided while taking the readings from the Analog meters.
CONCLUSION:
Basic Electronics
10
Basic Electronics
EXPERIMENT NO: 03
CHARACTERISTICS OF ZENER DIODE
AIM: To study the characteristics and to determine the breakdown voltage of a Zener diode.
APPARATUS:
1.
2.
3.
4.
5.
6.
R.P.S (0 30) v
Ammeter (0 100) A
Voltmeter (0 30) v
Zener diode (7.5V)
Resistor (1 K)
Breadboard
: 1 No
: 1 No
: 1 No
: 1 No
: 1 No
: 1 No
THEORY:
A properly doped crystal diode, which has a sharp breakdown voltage, is known as Zener diode.
FORWARD BIAS:
On forward biasing, initially no current flows due to barrier potential. As the applied potential
increases, it exceeds the barrier potential at one value and the charge carriers gain sufficient energy to
cross the potential barrier and enter the other region. the holes ,which are majority carriers in p-region,
become minority carriers on entering the N-regions and electrons, which are the majority carriers in the Nregions become minority carriers on entering the P-region. This injection of minority carriers results
current, opposite to the direction of electron movement.
REVERSE BIAS:
When the reverse bias is applied due to majority carriers small amount of current (i.e.) reverse
saturation current flows across the junction. As the reverse bias is increased to breakdown voltage, sudden
rise in current takes place due to Zener effect.
ZENER EFFECT:
Normally, PN junction of Zener Diode is heavily doped. Due to heavy doping the depletion layer will
be narrow. When the reverse bias is increased the potential across the depletion layer is more. This exerts a
force on the electrons in the outermost shell. Because of this force the electrons are pulled away from the
parent nuclei and become free electrons. This ionization, which occurs due to electrostatic force of
attraction, is known as Zener effect. It results in large number of free carriers, which in turn increases the
reverse saturation current.
PROCEDURE:
FORWARD BIAS:
1.
Connect the circuit as per the circuit diagram.
11
2.
3.
4.
5.
Basic Electronics
Vary the power supply in such a way that the readings are taken in steps of 0.1V.
Note down the corresponding ammeter readings.
Plot the graph: Vf (vs) If.
Find the dynamic resistance r = V / I.
REVERSE BIAS:
1.
2.
3.
4.
5.
Connect the circuit as per the diagram.

Vary the power supply in such a way that the readings are taken in steps of 0.5V.
Note down the corresponding Ammeter readings Ir.
Plot a graph between Vr & Ir
Find the dynamic resistance r = V / I.
CIRCUIT DIAGRAM:
FORWARD BIAS:
(0-100)A
1K
(0-30)
(0-1) V
-
REVERSE BIAS:
(0-30)mA
1K
+
(0-30) V
-
(0-30) V
-
12
Basic Electronics
ZENER DIODE CHARACTERISTIC:

If (in mA)
I2
VB
I1
Vr
V1 V2
(in volts)
OBSERVATION TABLE:
Vf
(in volts)
Ir (in mA)
FORWARD BIAS:
S.NO.
Applied
Voltage(V)
Forward
Voltage(Vf)
Forward
Current(If(mA))
Reverse
Voltage(Vf)
Reverse
Current(If(A))
REVERSE BIAS:
S.NO.
Applied
Voltage(V)
13
Basic Electronics
RESULT:
Forward and Reverse bias characteristics of the Zener diode were studied and the values of the
various parameters were found to be:
Forward bias dynamic resistance = --------------------Reverse bias dynamic resistance = ---------------------The reverse Breakdown voltage = -----------------------
CONCLUSION:
14
Basic Electronics
15
Basic Electronics
16
Basic Electronics
EXPERIMENT NO: 04
CHARACTERISTICS OF BJT-CE CONFIGURATION
AIM:
1. To draw the input and output characteristics of transistor connected in CE
configuration.
2. To find of the given transistor and also its input and output Resistances.
APPARATUS:
Transistor, BC107
Regulated power supply (0-30V)
Voltmeter (0-20V)
Ammeters (0-20mA)
Ammeters (0-200A)
Resistor, 100
Resistor, 1K
Bread board
Connecting wires
-1 No.
-1 No.
-2 No.
-1 No.
-1 No.
-1 No.
-1 No.
THEORY:
In common emitter configuration, input voltage is applied between base and emitter terminals and
output is taken across the collector and emitter terminals. Therefore the emitter terminal is common to
both input and output.
The input characteristics resemble that of a forward biased diode curve. This is expected since the
Base-Emitter junction of the transistor is forward biased. As compared to CB arrangement I B increases
less rapidly with VBE. Therefore input resistance of CE circuit is higher than that of CB circuit.
The output characteristics are drawn between Ic and VCE at constant IB. the collector current varies
with VCE up to few volts only. After this the collector current becomes almost constant, and independent of
VCE. The value of VCE up to which the collector current changes with V CE is known as Knee voltage. The
transistor always operated in the region above Knee voltage, IC is always constant and is approximately
equal to IB. The current amplification factor of CE configuration is given by
= IC/IB
Input Resistance, ri
Output Rsistance, ro
= VBE /IB (A)

= VCE /IC
at Constant VCE
at Constant IB (A)
17
Basic Electronics
CIRCUIT DIAGRAM:
EXPECTED GRAPH:
1.
INPUT CHARACTERISTICS:
2.
OUTPUT CHARACTERSITICS:
18
Basic Electronics
OBSERVATIONS:
1.
VCE = 1V
VCE = 2V
VCE = 4V
VBB
VBE(V)
2.
S.NO
IB (A)
VBE (V)
IB (A)
VBE (V)
IB (A)
OUTPUT CHARACTERSITICS:
IB = 50 A
VCE(V)
IC(mA)
IB = 75 A
VCE(V)
IC(mA)
IB = 100 A
VCE(V)
IC(mA)
19
Basic Electronics
PROCEDURE:
INPUT CHARACTERISTICS
1.
2.
For plotting the input characteristics the output voltage VCE is kept constant at 1V and for
different values of VBB, note down the values of IB and VBE.
3.
Repeat the above step by keeping VCE at 2V and 4V and tabulate all the readings.
4.
Plot the graph between VBE and IB for constant VCE.
OUTPUT CHARACTERISTICS:
1.
2.
For plotting the output characteristics the input current IB is kept constant at 50A and for
different values of VCC note down the values of IC and VCE.
3.
Repeat the above step by keeping IB at 75 A and 100 A and tabulate the all the readings.
4.
Plot the graph between VCE and IC for constant IB.
PRECAUTIONS:
1.
2.
The supply voltage should not exceed the rating of the transistor
Meters should be connected properly according to their polarities
CONCLUSION:
20
Basic Electronics
21
Basic Electronics
22
Basic Electronics
EXPERIMENT NO: 05
CHARACTERISTICS OF BJT CB CONFIGURATION
AIM: To study and plot the transistor characteristics in CB configuration.
APPARATUS REQUIRED:
Transistor, BC107
Voltmeter (0-30V) & (0-2V)
Ammeter (0-10mA)
Ammeter (0-1A)
Resistor, 10K
Resistor, 1K
Bread board
Connecting wires
-1 No.
-2 No.
-2 No.
-1 No.
-1 No.
-1 No.
-1 No.
THEORY:
In this configuration the base is made common to both the input and out. The emitter is given the
input and the output is taken across the collector. The current gain of this configuration is less than unity.
The voltage gain of CB configuration is high. Due to the high voltage gain, the power gain is also high. In CB
configuration, Base is common to both input and output. In CB configuration the input characteristics relate
IE and VEB for a constant VCB. Initially let VCB = 0 then the input junction is equivalent to a forward biased
diode and the characteristics resembles that of a diode. Where VCB = +VI (volts) due to early effect IE
increases and so the characteristics shifts to the left. The output characteristics relate I C and VCB for a
constant IE. Initially IC increases and then it levels for a value IC = IE. When IE is increased IC also increases
proportionality. Though increase in VCB causes an increase in , since is a fraction, it is negligible and so IC
remains a constant for all values of VCB once it levels off.
PROCEDURE:
It is the curve between emitter current IE and emitter-base voltage VBE at constant collector-base
voltage VCB.
1.
2.
3.
4.
5.

Set VCE=5V, vary VBE in steps of 0.1V and note down the corresponding IB.
Repeat the above procedure for 10V, 15V.
Plot the graph VBE Vs IB for a constant VCE.
Find the h parameters.
23
Basic Electronics
It is the curve between collector current IC and collector-base voltage VCB at constant emitter current IE.
1.
2.
3.
4.
5.

Set IB=20A, vary VCE in steps of 1V and note down the corresponding IC.
Repeat the above procedure for 40A, 80A, etc.
Plot the graph VCE Vs IC for a constant IB.
Find the h parameters.
CIRCUIT DIAGRAM:
TABULAR COLUMN:
24
Basic Electronics
MODEL GRAPH:
25
Basic Electronics
RESULT:
The transistor characteristics of a Common Base (CB) configuration were plotted and studied.
PRECAUTIONS:
1.
2.
The supply voltage should not exceed the rating of the transistor.
Meters should be connected properly according to their polarities.
CONCLUSION:
26
Basic Electronics
27
Basic Electronics
28
Basic Electronics
EXPERIMENT NO: 06
CHARACTERISTICS OF BJT CC CONFIGURATION
AIM: To study and plot the transistor characteristics in CC configuration.
APPARATUS REQUIRED:
Transistor, BC107
Ammeter (0-30mA)
Ammeter (0-250A)
Resistor, 1K
Bread board
Connecting wires
-1 No.
-2 No.
-2 No.
-1 No.
-1 No.
-2 No.
THEORY:
A BJT is a three terminal two junction semiconductor device in which the conduction is due to
both the charge carrier. Hence it is a bipolar device and it amplifier the sine waveform as they are
transferred from input to output. BJT is classified into two types NPN or PNP. A NPN transistor consists of
two N types in between which a layer of P is sandwiched. The transistor consists of three terminal emitter,
collector and base. The emitter layer is the source of the charge carriers and it is heartily doped with a
moderate cross sectional area. The collector collects the charge carries and hence moderate doping and
large cross sectional area. The base region acts a path for the movement of the charge carriers. In order to
reduce the recombination of holes and electrons the base region is lightly doped and is of hollow cross
sectional area. Normally the transistor operates with the EB junction forward biased.
In transistor, the current is same in both junctions, which indicates that there is a transfer of
resistance between the two junctions. One to this fact the transistor is known as transfer resistance of
transistor.
PROCEDURE:
INPUT CHARECTERISTICS:
1.
2.
3.

Set VCE, vary VBE in regular interval of steps and note down the corresponding IB reading.
Repeat the above procedure for different values of VCE.
Plot the graph: VBC Vs IB for a constant VCE.
29
Basic Electronics
OUTPUT CHARECTERISTICS:
1.
2.
3.

Set IB, Vary VCE in regular interval of steps and note down the corresponding IC reading.
Repeat the above procedure for different values of IB.
Plot the graph: VCE Vs IC for a constant IB.
CIRCUIT DIAGRAM:
MODEL GRAPH:
30
Basic Electronics
TABULAR COLUMN:
31
Basic Electronics
RESULT:
The transistor characteristics of a Common Collector (CC) configuration were plotted.
PRECAUTIONS:
1.
2.
CONCLUSION:
32
Basic Electronics
33
Basic Electronics
34
Basic Electronics
EXPERIMENT NO: 07
CHARACTERISTICS OF FIELD EFFECT TRANSISTOR
AIM: To plot the characteristics of FET and determine rd, gm, , IDSS, VP.
APPARATUS REQUIRED:
FET, BFW10
Ammeter (0-30mA)
Resistor, 1K and 68K
Bread board
Connecting wires
-1 No.
-2 No.
-2 No.
-1 No.
-2 No.
THEORY:
FET is a voltage operated device. It has got 3 terminals. They are Source, Drain & Gate. When the
gate is biased negative with respect to the source, the PN junctions are reverse biased & depletion regions
are formed. The channel is more lightly doped than the p type gate, so the depletion regions penetrate
deeply in to the channel. The result is that the channel is narrowed, its resistance is increased, & I D is
reduced. When the negative bias voltage is further increased, the depletion regions meet at the center & I D
is cutoff completely.
PROCEDURE:
DRAIN CHARACTERISTICS:
1.
2.
3.
4.
5.

Set the gate voltage VGS = 0V.
Vary VDS in steps of 1 V & note down the corresponding ID.
Repeat the same procedure for VGS = -1V.
Plot the graph VDS Vs ID for constant VGS.
TRANSFER CHARACTERISTICS:
1.
2.
3.
4.
5.

Set the drain voltage VDS = 5 V.
Vary the gate voltage VGS in steps of 1V & note down the corresponding ID.
Repeat the same procedure for VDS = 10V.
Plot the graph VGS Vs ID for constant VDS.
35
Basic Electronics
CIRCUIT DIAGRAM:
MODEL GRAPH:
36
Basic Electronics
TABULAR COLUMN:
37
Basic Electronics
FET PARAMETER CALCULATION:

Drain Resistance rd =
VDS
ID
Transconductance gm =
GS
ID
VGS
V
DS
Amplification factor =rd.gm
RESULT:
Thus the Drain & Transfer characteristics of given FET is Plotted.
Rd =
Gm =
=
IDSS =
Pinch off voltage VP =
PRECAUTIONS:
1.
2.
CONCLUSION:
38
Basic Electronics
39
Basic Electronics
40
Basic Electronics
EXPERIMENT NO: 08
CLIPPER CIRCUTS WAVEFORMS
AIM: To observe waveforms at the input and output of clipper circuits.
THEORY:
Clipping circuit is used to select for transmission that part of an arbitrary waveform which lies
above or below some reference level. Clipping circuit clips some portion of the waveform. Clipping
circuit is also referred to as voltage limiters. Clamping circuit preserves shape of the waveform while
clipping circuit does not preserve shape of waveform. Clipping circuit uses some reference level.
Waveform above or below this reference level is clipped. Clipping circuits are also known as voltage
limiter or amplitude limiter or slicers. Some clipper circuits are explained here.
Positive cycle clipper circuits:

Positive cycle clipper circuits are shown in the figure with series and shunt diode. Transfer
characteristics and output waveform for sinusoidal input is shown.
For series diode:

When vi (t)<0, Diode D is in ON condition, input waveform is available at the output.
When vi (t)>0, Diode D is in OFF condition, input waveform is not available at the output and
output remains zero.
41
Basic Electronics
For shunt diode:

When vi(t)<0, Diode D is in ON condition which bypass the signal to the ground and hence input
waveform is not available at the output.
When vi(t)>0, Diode D is in OFF condition and acts like a OFF switch, input waveform is available at
the output.
For negative cycle clipper, polarity of diode is reverse.
Series diode positive clipping with positive reference:

In the circuit shown in the following figure, DC reference voltage is used. This is useful of we
do not want to clip entire positive cycle but some portion of positive half cycle.
When vi(t)<VR, Diode D is in ON condition, input waveform is available at the output.

When vi(t)> VR, Diode D is in OFF condition, input waveform is not available at the output and output
remains zero. Thus portion of output cycle clips as shown in the waveform.
Series diode positive clipping with negative reference:

If want to clip entire positive half cycle along with some portion of the negative cycle then
negative DC reference can be used as shown in the following figure. In this case only some
portion of negative cycle passes to the output.
When vi(t)<-VR, Diode D is in ON condition, input waveform is available at the output.

When vi(t)> -VR, Diode D is in OFF condition, input waveform is not available at the output and
output remains constant equal to VR. Thus entire positive cycle and some portion of negative cycle
below VR clips.
Series diode negative clipping with reference:

Negative clipping can be achieved by changing polarity of the diode. Negative clipper with
negative reference voltage is shown in the following figure. This will clip some portion of negative cycle.
42
Basic Electronics
When vi(t)>-VR, Diode D is in ON condition, input waveform is available at the output.

When vi(t)< -VR, Diode D is in OFF condition, input waveform is not available at the output and
output voltage remains constant which is equal to VR.
Shunt diode positive clipping with negative reference voltage:

Shunt diode positive clipping with negative reference voltage is as shown in the following
circuit. This will clip entire positive cycle and some portion of negative cycle as shown in the
waveform.
When vi(t)<-VR, Diode D is in OFF condition (open circuit) and input waveform is available at the
output.
When vi(t)> -VR, Diode D is in ON condition, input waveform is not available at the output and
negative voltage VR is extended to the output. Output voltage remains constant equal to VR. Thus
entire positive cycle and some portion of negative cycle below VR clips.
Shunt diode negative clipping with negative reference:

Negative clipping with negative reference voltage can be achieved by reversing polarity of the
diode. Some portion of negative cycle clips.
When vi(t)>-VR, Diode D is in OFF condition (open circuit) and input waveform is available at the
output.
When vi(t) < -VR, Diode D is in ON condition, input waveform is not available at the output and
negative voltage VR is extended to the output. Output voltage remains constant equal to VR. Thus entire
positive cycle and some portion of negative cycle below VR clips.
43
Basic Electronics
CIRCUIT DIAGRAM:
Draw circuit diagrams (as per circuit available in the laboratory or circuit connected on
breadboard):
PROCEDURE:
1.
2.
3.
4.
Connect function generator with CRO.

Set sine wave with 6V peak to peak. Ensure that offset voltage is 0.
Connect the function generator at the input of the clipping circuit.
Observe output waveforms on the CRO for different clipping circuits and draw output
waveforms.
OBSERVATION TABLE:
44
Basic Electronics
CONCLUSION:
45
Basic Electronics
46
Basic Electronics
EXPERIMENT NO: 09
CLAMPER CIRCUTS WAVEFORMS
AIM: To observe waveforms at the input and output of clamper circuits.
THEORY:
Diodes are widely used in clipping and clamping circuits. Clamping circuits are used to change
DC level (average level) of the signal which adds or subtracts DC value with the signal. In clamping,
shape of waveform remains same only offset value (DC level) will change. Positive clamping adds positive
DC level in the signal while negative clamping adds negative DC level in the signal. Capacitor is widely
used in the clamping circuit. Typical clamping waveform for the sinusoidal signal is shown below for
positive clamping and negative clamping.
Clamping circuit is used in video amplifier of television receiver to restore DC level of video signal to
preserve overall brightness of the scene. Clamping circuit is also used in offset control of function
generator. Zero offset means no DC value is added in the AC signal.
47
Basic Electronics
Circuit operation:
Typical circuit operation of the positive clamping and negative clamping is given below.
Positive clamping:
Consider that 4V peak to peak signal with zero offset is applied at the input of the clamping circuit. On
the first negative half cycle of the input signal, diode D turns ON because anode voltage is greater
than cathode voltage. Capacitor charges to the negative peak voltage let us say -2V in our
example. The value of R should be high so that it will not discharge the capacitance. After completion
of negative cycle, positive cycle starts and diode turns OFF. Capacitance voltage is in series with the
input voltage. As per the Kirchhoffs law output voltage will be addition of input voltage and
capacitance voltage. Input signal is positive swing of +2V and capacitor voltage is +2V. Thus during
the positive peak of the input voltage total output voltage will be +4V. We can consider that during
the positive cycle capacitor acts like a battery and ads +2V in the input. Waveforms are drawn here
considering ideal diode, no leakage in the capacitance under ideal situations which will be different in
practical situations.
Negative clamping:
In a negative clamping circuit polarity of diode is reverse than in positive clamping. In our signal
input swings from -2V to +2V (peak to peak 4V). Diode turns ON during the positive cycle and
charge is stored in the capacitor. Capacitor will charge up to +2 V in our example. During the
negative cycle this voltage will be in series with the input voltage and gives total output -4V during
negative peak of the input signal.
48
Basic Electronics
CIRCUIT DIAGRAM:
Draw circuit diagrams (as per circuit available in the laboratory or circuit connected on breadboard):
PROCEDURE:
1.
2.
3.
Connect function generator with CRO.

Set sine wave with 4V peak to peak. Ensure that offset voltage is 0.
Connect the function generator at the input of the clamping circuit.
4.
Observe output waveforms on the CRO for different clamping circuits and draw output
waveforms.
OBSERVATION TABLE:
49
Basic Electronics
CONCLUSION:
50
Basic Electronics
51
Basic Electronics
EXPERIMENT NO: 09
RC PHASE SHIFT OSCILLATOR
AIM:
1. Identify the circuitry and schematic diagram of an RC phase shift oscillator.
2. Describe the operating characteristics of the RC phase shift oscillator.
3. Observe normal operations of the RC phase shift oscillator.
APPARATUS REQUIRED:
1.
2.
3.
4.
5.
6.
Dual Power supply

Oscilloscope
Operational amplifier
Transistors
Components as shown in figures
Function generator.
THEORY:
The oscillator is an amplifier with positive feedback that generates a number of waveforms usually
used in instrumentation and test equipments. An oscillator that generates a sinusoidal output is called a
harmonic oscillator; the transistor is usually acts in the active region. The output of the relaxation
oscillator is not sinusoidal depending on the transient rise and decay of voltage in RC or RL circuits. There
are two types of RC oscillators:
Phase shift oscillators in which the output of an amplifier must be 180o out of phase with input. A general
circuit diagram of a phase shift oscillator is shown in Fig.(l), where the amplifier is an ideal one. A phase
shift network (usually a resistor-capacitor network) is used to produce an additional phase shift of 180 at
one particular frequency to develop the required positive feedback. From the mesh network equations of
the feedback network, we find the feedback factor as,
The phase shift of the feedback network must be 180 then:
At this frequency = 1/29 and it is required that (A) must be at least 29 to satisfy oscillation condition as
shown in Fig. (2). the phase shift oscillator is used to the range of frequencies for several hertz to several
kilohertz and so includes the range of audio frequencies. The frequency depends on the impedance
52
Basic Electronics
elements in the phase shift network. The phase shift oscillator circuit is not very suitable for generating
variable frequency because the resistors and capacitors must be simultaneously changed to obtain the
required frequency control over a wide range therefore it is used mostly in fixed frequency applications.
CIRCUIT DIAGRAM:
53
Basic Electronics
PROCEDURE:
1. Connect the circuit as shown in Fig (2), insert potentiometer of l k in the feedback arm.
2. Measure the frequency of oscillation (fo) and the amplitude of the output voltage.
3. Measure and draw the waveforms of points A, B and D.
4. Observe the effect of variation of the potentiometer on the frequency of oscillation.
5. Observe the effect of the variation of RE on fo.
CALCULATIONS:
Output frequency of Oscillation =
Amplitude of Output Voltage =
OBSERVATIONS:
A
S.No
(fo)
B
(Vo)
(fo)
C
(Vo)
(fo)
(Vo)
1
2
3
4
5
6
PRECAUTIONS:
1.
2.
CONCLUSION:
54
Basic Electronics
55
Basic Electronics
56

Lab Manual - Basic Electronics

Caricato da

Informazioni sul documento

Titolo originale

Copyright

Formati disponibili

Condividi questo documento

Condividi o incorpora il documento

Opzioni di condivisione

Hai trovato utile questo documento?

Questo contenuto è inappropriato?

Copyright:

Formati disponibili

Lab Manual - Basic Electronics

Caricato da

Copyright:

Formati disponibili

Navrachana University

B. Tech. 4th Semester (MECH)

This is to certify that Mr./Ms.____________________________________________ of B.Tech 3rd Semester

TO STUDY THE P-N JUNCTION DIODE CHARACTERISTICS

TO STUDY ZENER DIODE CHARACTERISTICS UNDER FORWARD AND

TO STUDY THE COMMON EMITTER CHARACTERISTICS OF BJT.

TO STUDY THE COMMON BASE CHARACTERISTICS OF BJT.

TO STUDY THE COMMON COLLECTOR CHARACTERISTICS OF BJT.

TO STUDY OF THE CHARACTERISTICS OF FIELD EFFECT TRANSISTOR.

TO STUDY CLIPPER CIRCUTS WAVEFORMS.

TO STUDY CLAMPER CIRCUTS WAVEFORMS.

TO STUDY RC PHASE SHIFT OSCILLATOR AND ITS CHARACTERISTICS.

P-N Diode IN4007

Connections are made as per the circuit diagram.

Connections are made as per the circuit diagram

All the connections should be correct.

Connect the circuit as per the circuit diagram.

Connect the circuit as per the diagram.

ZENER DIODE CHARACTERISTIC:

= VBE /IB (A)

Connect the circuit as per the circuit diagram.

Plot the graph between VBE and IB for constant VCE.

Connect the circuit as per the circuit diagram.

Plot the graph between VCE and IC for constant IB.

Connect the circuit as per the circuit diagram.

Connect the circuit as per the circuit diagram.

Connect the circuit as per the circuit diagram.

Connect the circuit as per the circuit diagram.

Connect the circuit as per the circuit diagram.

Connect the circuit as per the circuit diagram.

FET PARAMETER CALCULATION:

Amplification factor =rd.gm

Positive cycle clipper circuits:

For series diode:

For shunt diode:

Series diode positive clipping with positive reference:

When vi(t)<VR, Diode D is in ON condition, input waveform is available at the output.

Series diode positive clipping with negative reference:

When vi(t)<-VR, Diode D is in ON condition, input waveform is available at the output.

Series diode negative clipping with reference:

When vi(t)>-VR, Diode D is in ON condition, input waveform is available at the output.

Shunt diode positive clipping with negative reference voltage:

Shunt diode negative clipping with negative reference:

Connect function generator with CRO.

Connect function generator with CRO.

Dual Power supply

The phase shift of the feedback network must be 180 then:

Potrebbero piacerti anche