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FLM1414-8F

Internally Matched Power GaAs FET

FEATURES

• High Output Power: P 1dB = 39.0dBm (Typ.)

• High Gain: G 1dB = 6.0dB (Typ.)

• High PAE: η add = 27% (Typ.)

• Low IM 3 = -46dBc@Po = 28.5dBm (Typ.)

• Broad Band: 14.0 ~ 14.5GHz

• Impedance Matched Zin/Zout = 50

• Hermetically Sealed

DESCRIPTION

The FLM1414-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.

Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25 ° C)

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Item

Symbol

 

Condition

 

Rating

Unit

Drain-Source Voltage

 

V

DS

     

15

V

Gate-Source Voltage

 

V

GS

     

-5

V

Total Power Dissipation

 

P

T

T

c = 25°C

 

42.8

W

Storage Temperature

 

T

stg

   

-65 to +175

°C

Channel Temperature

 

T

ch

     

175

°C

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:

 

1. The drain-source operating voltage (V DS ) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with gate resistance of 100.

 

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

 

Item

 

Symbol

 

Test Conditions

 

Limit

Unit

Min.

Typ.

Max.

Saturated Drain Current

 

I

DSS

V

DS = 5V, V GS = 0V

-

3400

5200

mA

Transconductance

 

g

m

V

DS = 5V, I DS = 2200mA

-

3400

-

mS

Pinch-off Voltage

 

V

p

V

DS = 5V, I DS = 170mA

-0.5

-1.5

-3.0

V

Gate Source Breakdown Voltage

 

V

GSO

I

GS = -170µA

-5.0

-

-

V

Output Power at 1dB G.C.P.

 

P

1dB

 

38.5

39.0

-

dBm

Power Gain at 1dB G.C.P.

 

G

1dB

V

DS = 10V

5.0

6.0

-

dB

Drain Current

 

I

dsr

 

f = 14.0 ~ 14.5 GHz

 

2200

2600

mA

I DS = 0.65 I DSS (Typ.)

-

           

Power-Added Efficiency

 

η

add

Z

S = Z L = 50

-

27

-

%

Gain Flatness

 

G

 

-

-

±0.6

dB

3rd Order Intermodulation Distortion

 

f

= 14.5GHz, f = 10MHz

       
 

IM 3

2-Tone Test Pout = 28.5dBm S.C.L.

-44

-46

-

dBc

Thermal Resistance

 

R

th

Channel to Case

-

3.0

3.5

°C/W

Channel Temperature Rise

 

T ch

 

10V x I dsr x R th

-

-

80

°C

CASE STYLE: IA

G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level

Edition 1.2

August 2004

1

- - 80 ° C CASE STYLE: IA G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level

FLM1414-8F

Internally Matched Power GaAs FET

POWER DERATING CURVE

OUTPUT POWER & IM 3 vs. INPUT POWER

50 35 V DS =10V 33 40 f1 = 14.5 GHz f2 = 14.51 GHz
50
35
V
DS =10V
33
40
f1 = 14.5 GHz
f2 = 14.51 GHz
2 - tone test
31
Pout
29
30
27
-25
20
25
-35
IM 3
23
-45
10
21
-55
-65
0
50
100
150
200
18
20
22
24
26
28
Total Power Dissipation (W)
Output Power (S.C.L.) (dBc)
IM 3 (dBc)

Case Temperature (°C)

OUTPUT POWER vs. FREQUENCY

V DS =10V P 1dB Pin=34dBm 39 38 32dBm 37 36 30dBm 35 34 28dBm
V
DS =10V
P
1dB
Pin=34dBm
39
38
32dBm
37
36
30dBm
35
34
28dBm
33
14.0
14.1
14.2
14.3
14.4
14.5
Output Power (dBm)

Frequency (GHz)

Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level

OUTPUT POWER vs. INPUT POWER

40 V DS =10V 38 f = 14.25 GHz 36 P out 34 25 32
40
V
DS =10V
38
f
= 14.25 GHz
36
P
out
34
25
32
20
30
15
η
add
28
10
26
5
0
22
24
26
28
30
32
34
Output Power (dBm)
η
add (%)

Input Power (dBm)

32 20 30 15 η add 28 10 26 5 0 22 24 26 28 30

2

FLM1414-8F

Internally Matched Power GaAs FET

S +j50 11 +90° S 22 +j100 +j25 14.2 14.4 14.0 14.5 14.2 +j250 14.0
S
+j50
11
+90°
S
22
+j100
+j25
14.2
14.4
14.0
14.5
14.2
+j250
14.0
14.4
+j10
13.8 GHz
14.5
14.7
13.8 GHz
13.8 GHz
14.7
13.8 GHz
14.7
1
2
3
4
0
10
50Ω
250
180°
SCALE FOR |S 21 |
14.5
14.0
14.4
14.0
14.2
14.7
14.2
14.5
14.4
-j10
-j250
0.1
-j25
-j100
0.2
-j50
-90°
SCALE FOR |S 12 |

S-PARAMETERS

V DS = 10V, I DS = 2200mA

FREQUENCY

S11

S21

S12

S22

S 21

S 12

0°

(MHZ)

MAG

ANG

MAG

ANG

MAG

ANG

MAG

ANG

13800

.337

18.1

2.004

130.1

.100

132.0

.513

4.9

13900

.284

4.4

2.044

119.3

.104

121.3

.497

-5.7

14000

.231

-12.4

2.081

108.6

.110

109.7

.474

-16.3

14100

.182

-33.2

2.103

97.6

.114

99.8

.444

-26.7

14200

.147

-64.5

2.116

86.4

.114

88.6

.413

-37.7

14300

.144

-103.7

2.115

75.1

.119

77.3

.373

-49.0

14400

.172

-137.1

2.097

63.7

.119

67.5

.338

-60.8

14500

.221

-160.1

2.067

52.4

.118

56.1

.300

-74.0

14600

.272

-176.7

2.017

41.3

.116

45.9

.264

-88.6

14700

.323

170.6

1.949

30.3

.115

35.6

.237

-105.3

3

41.3 .116 45.9 .264 -88.6 14700 .323 170.6 1.949 30.3 .115 35.6 .237 -105.3 3

FLM1414-8F

Internally Matched Power GaAs FET

Case Style "IA" Metal-Ceramic Hermetic Package

1 2-R 1.25±0.15 0.1 (0.049) (0.004) 4 2 3 1.8±0.15 0.5 (0.071) (0.020) 3.2 Max.
1
2-R 1.25±0.15
0.1
(0.049)
(0.004)
4
2
3
1.8±0.15
0.5
(0.071)
(0.020)
3.2 Max.
(0.126)
8.1
(0.319)
1. Gate
2. Source (Flange)
3. Drain
4. Source (Flange)
13.0±0.15
(0.512)
Unit: mm(inches)
16.5±0.15
(0.650)
0.2 Max.
(0.008)
1.15
1.5 Min.
9.7±0.15
1.5 Min.
(0.045)
(0.059)
(0.382)
(0.059)

For further information please contact:

Eudyna Devices USA Inc.

2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111

www.us.eudyna.com

Eudyna Devices Europe Ltd.

Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888

Eudyna Devices Asia Pte Ltd. Hong Kong Branch

Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921

Eudyna Devices Inc.

Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170

CAUTION

Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:

• Do not put this product into the mouth.

• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.

• Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.

Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others.

© 2004 Eudyna Devices USA Inc. Printed in U.S.A.

not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices

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