Basic Power Electronics

Laboratory Manual
Experiment No. 01

VI Characteristics of MOSFET
Objective:
Draw the drain characteristics and transfer characteristics of the given MOSFET by
taking different readings of drain current ID, gate-source voltage VGSand drain-source voltage
VDS.
Equipment Required:

Power Electronics Trainer PEED-13100

IRF-740 MOSFET Datasheet

Circuit Diagram:

Figure 1.1: Circuit for VI Characteristics of MOSFET

Conceptual Background:
In contrast with the BJT, the FET is a voltage controlled device where Drain, Gate
and Source can be compared to the Collector, Base and Emitter of the BJT. Pin diagram of
IRF-740 MOSFET is shown in fig 1.3. The FET has no juction as compared to the PN juction
in BJT. Rather it consists of doped drift channel (n or p type) between the drain and the
source, through which charges drift. The conduction of this channel is controlled through an
electric field caused by the voltage VGS applied between gate and source. As little or no gate
current flows, the MOSFET has a much higher input impedance than the BJT. The cross
sectional view of the channel is shown in fig. 1.2.
Following are some definitions related to the Power MOSFET.

Breakdown voltage, BVDSS, is the maximum drain-to-source voltage the MOSFET

can endure without the avalanche breakdown of the body drain P-N junction in off
state with VGS=0. It can also defined as the voltage at which the reverse-biased body-

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drift diode (fig. 1.2) breaks down and significant current starts to flow between the
source and drain by the avalanche multiplication process. It is measured with VGS=0.

On-resistance RDS is the resistance offered to the current flowing from drain to the
source during ON state. The on-state resistance of a power MOSFET is made up of
several components and this resistance can be stated as following:

RDS

VDS
I D

Figure 1.3: Pin Diagram of IRF-740 MOSFET

Figure 1.2: Cross Sectional view of an Nchannel enhancement MOSFET

Trans-conductance In most MOSFET applications, an input signal is the gate

voltage VGS and the output is the drain current ID. Trans-conductance is the ratio:

gm

I D
VGS

VDS const

Threshold Voltage VGS(th), is defined as the minimum gate electrode bias required to
form a conducting channel between the source and the drain regions. Vth is usually
measured at a drain-source current of 250A.

Characteristic Curves:

Figure 1.4: Drain Characteristics

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Figure 1.5: Transfer/Transconductance

Characteristics

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Laboratory Manual

Procedure:
Drain Characteristics
1. Make connections as per fig 1.1.
2. Set the gate-source voltage VGS to 3V and drain source voltage VDS = 0V.
3. Measure the drain current IDS, versus the drain-source voltage VDS from 0 to 12 V (by
varying V2). Make sure you take measurements at a sufficient number of VDS values
since you will later need to plot IDS versus VDS. Note down the values of drain source
voltage VDS and the drain current ID and fill table 1.1.
4. Repeat the entire step 3 for VGS = 4V, 4.5V, 5V.
5. Plot IDS versus VDS with VGS as a parameter (See fig 1.4 for reference).
6. With VDS = 5 V, determine the value of VGS at which the current IDS becomes equal to
250A. This value of VGS is close to the so-called threshold voltage of the transistor,
and it is positive for an "enhancement mode". VGS(th) = ____________ volts.
Transfer/Transconductance Characteristics
1. Make connections as per fig 1.1.
2. Set VGS=0V, VDS=12V.
3. Now slowly increase the voltage V1 or VGS (from 0V to 10V) while monitoring ID.
Note VGS when the drain current does not show any appreciable increase. Note down
the values of gate source voltage VGS and the drain current ID and fill table 1.2.
4. Plot VGS vs ID to obtain a graph similar to that shown in fig. 1.5.
MOSFET as a Voltage-Controlled Resistor
From the circuit of fig. 1.1, disconnect the drain and source from resistor and V2 than
connect an ohmmeter between the drain and the source, and verify that the resistance
across these two terminals can be varied by varying VGS.
Data & Calculations:
Table 1.1:
Drain Characteristics
Sr.
No.

VGS1 =
VDS (V)

ID (A)

VGS2 =
VDS (V)

VGS3 =

ID (A)

VDS (V)

VGS4 =

ID (A)

VDS (V)

ID (A)

1
2
3
4

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5
6
7
8
9
10
Table 1.2:
Transfer Characteristics
VDS(volts) = 12V
Sr.
No.

VGS(V)

ID(A)

1
2
3
4
5
6
7
8
9
10
Review Questions:
1. What are the specified parameters of given MOSFET?
2. Draw the symbol of n-channel enhancement mode MOSFET?
3. What changes occur in the symbol of the MOSFET in fig 1.1 if the mosfet is:
a. Depletion mode?
b. P-channel?
4. What is transconductance?
5. How do we find the resistance RON? Find RON from your data?
6. Write down five practical applications of a MOSFET?

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