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CMPE 640
p-well
n-well
n-well
p-well
n-well
CMPE 640
n-well
p-well
n-well
Trench oxide
p-well
n-well
CMPE 640
p-well
n-well
CMPE 640
Trench oxide
p-well
Trench oxide
Poly deposited and etched
Trench oxide
p-well
Trench oxide
CMPE 640
gate
Trench oxide
p-well
Trench oxide
The source and drain implant concentration are relatively low (lightly doped drain or
LDD), which reduces the electric field at the drain junction.
This improves the immunity of the transistor to hot electron damage.
Light doping decreases capacitance but increases resistance.
5
CMPE 640
gate
Trench oxide
n+
n+
p-well
Trench oxide
The resistance of the gate, source and drain regions are reduced by introducing a refractory
metal.
Tantalum, molybdenum, titanium or cobalt.
Polyside: Only the gate is silicide.
Salicide: Gate, source and drain are silicide.
6
CMPE 640
Trench oxide
p-well
Trench oxide
Dielectric added, CMP applied, contact holes cut and metal 1 applied.
Trench oxide
p-well
Trench oxide
CMPE 640
lightly doped
n-type Si (n-)
Sapphire
CMPE 640
2)
n-
n-
n-
Sapphire
Sapphire
n-island
p-island
p-
3)
photoresist
6)
p-
n+ n+
n-
Sapphire
Sapphire
Thinox
4)
n-
7)
pSapphire
n-
n+ n+
p+ p+
Sapphire
Oxidation + metalization
9
CMPE 640
10
CMPE 640
11
CMPE 640
Etch stop
Low-k dielectrics
Adding fluorine and carbon to SiO2 reduces dielectric constant < 3.0
12
CMPE 640
13
CMPE 640
14
CMPE 640
15