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BTS 7710 G
Data Sheet
1
Overview
1.1
Features
P-DSO-28-14
Type
Ordering Code
Package
BTS 7710 G
Q67007-A9399
P-DSO-28-14
1.2
Description
The BTS 7710 G is part of the TrilithIC family containing three dies in one package:
One double high-side switch and two low-side switches. The drains of these three
vertical DMOS chips are mounted on separated leadframes. The sources are connected
to individual pins, so the BTS 7710 G can be used in H-bridge- as well as in any other
configuration. The double high-side is manufactured in SMART SIPMOS technology
which combines low RDS ON vertical DMOS power stages with CMOS control circuitry.
The high-side switch is fully protected and contains the control and diagnosis circuitry.
To achieve low RDS ON and fast switching performance, the low-side switches are
manufactured in S-FET logic level technology. The equivalent standard product is the
BUZ 103 SL.
In contrast to the BTS 7710 GP, which consists of the same chips in an P-TO263-15
package, the P-DSO-28-14 package offers a smaller outline and a lower price for
applications, which do not need the thermal properties of the P-TO263-15.
Data Sheet
2001-02-01
BTS 7710 G
1.3
Pin Configuration
(top view)
DL1
28 DL1
IL1
27 SL1
DL1
26 SL1
LS-Leadframe
N.C.
25 DL1
DHVS
24 DHVS
GND
23 SH1
IH1
22 SH1
HS-Leadframe
ST
21 SH2
IH2
20 SH2
DHVS 10
19 DHVS
N.C. 11
18 DL2
LS-Leadframe
DL2 12
17 SL2
IL2 13
16 SL2
DL2 14
15 DL2
Figure 1
Data Sheet
2001-02-01
BTS 7710 G
1.4
Pin No.
Symbol
Function
1, 3, 25, 28
DL1
IL1
N.C.
not connected
5, 10, 19, 24
DHVS
GND
Ground
IH1
ST
IH2
11
N.C.
not connected
DL2
13
IL2
16,17
SL2
20,21
SH2
22,23
SH1
26,27
SL1
1)
To reduce the thermal resistance these pins are direct connected via metal bridges to the leadframe.
Data Sheet
2001-02-01
BTS 7710 G
1.5
DHVS
5,10,19,24
8
ST
Diagnosis
IH1
IH2
GND
Driver
IN OUT
0 0 L L
0 1 L H
1 0 H L
1 1 H H
RO1
RO2
20,21
SH2
12,14,15,18
DL2
22, 23
SH1
1,3,25,28
DL1
IL1
13
IL2
26, 27
SL1
16, 17
SL2
Figure 2
Block Diagram
Data Sheet
2001-02-01
BTS 7710 G
1.6
Circuit Description
Input Circuit
The control inputs IH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with
hysteresis. Buffer amplifiers are driven by these stages and convert the logic signal into
the necessary form for driving the power output stages. The inputs are protected by ESD
clamp-diodes.
The inputs IL1 and IL2 are connected to the gates of the standard N-channel vertical
power-MOS-FETs.
Output Stages
The output stages consist of an low RDS ON Power-MOS H-bridge. In H-bridge
configuration, the D-MOS body diodes can be used for freewheeling when commutating
inductive loads. If the high-side switches are used as single switches, positive and
negative voltage spikes which occur when driving inductive loads are limited by
integrated power clamp diodes.
Short Circuit Protection
The outputs are protected against
output short circuit to ground
overload (load short circuit).
An internal OP-Amp controls the Drain-Source-Voltage by comparing the DS-VoltageDrop with an internal reference voltage. Above this trippoint the OP-Amp reduces the
output current depending on the junction temperature and the drop voltage.
In the case of overloaded high-side switches the status output is set to low.
Overtemperature Protection
The high-side switches incorporate an overtemperature protection circuit with hysteresis
which switches off the output transistors and sets the status output to low.
Undervoltage-Lockout (UVLO)
When VS reaches the switch-on voltage VUVON the IC becomes active with a hysteresis.
The High-Side output transistors are switched off if the supply voltage VS drops below
the switch off value VUVOFF.
Data Sheet
2001-02-01
BTS 7710 G
Status Flag
The status flag output is an open drain output with Zener-diode which requires a pull-up
resistor, c.f. the application circuit on page 14. Various errors as listed in the table
Diagnosis are detected by switching the open drain output ST to low. A open load
detection is not available. Freewheeling condition does not cause an error.
2
Flag
IH1
IH2
SH1
Inputs
Normal operation;
identical with functional truth table
Undervoltage
SH2
ST Remarks
Outputs
0
0
1
1
0
1
0
1
L
L
H
H
L
H
L
H
1
1
1
1
0
1
X
X
L
L
X
X
1
0
detected
X
X
0
1
X
X
L
L
1
0
detected
0
X
1
0
1
X
L
L
L
L
L
L
1
0
0
detected
detected
not detected
Inputs:
Outputs:
Status:
0 = Logic LOW
1 = No error
1 = Logic HIGH
0 = Error
X = dont care
stand-by mode
switch2 active
switch1 active
both switches
active
Data Sheet
2001-02-01
BTS 7710 G
Electrical Characteristics
3.1
Parameter
Symbol
Limit Values
min.
Unit Remarks
max.
VS
VS(SCP)
0.3
IS
IIH
VIH
42
28
**
mA
10
16
0.3
5.4
mA
Pin ST
** internally limited
Status Output ST
Status pull up voltage
Status Output current
VST
IST
VDSL
55
VIL = 0 V; ID 1 mA
LS-drain current*
TA = 25C
IDL
11
24
t < 100 ms
t < 10 ms
t < 1 ms
VIL
20
20
Tj
Tstg
40
150
55
150
LS-input voltage
Note: * single pulse
Temperatures
Junction temperature
Storage temperature
Data Sheet
2001-02-01
BTS 7710 G
3.1
Parameter
Symbol
Limit Values
min.
Unit Remarks
max.
RthjC L
RthjC H
Rthja
20
20
60
ESD Protection (Human Body Model acc. MIL STD 883D, method 3015.7 and EOS/
ESD assn. standard S5.1 - 1993)
Input LS-Switch
Input HS-Switch
Status HS-Switch
Output LS and HS-Switch
VESD
VESD
VESD
VESD
0.5
kV
kV
kV
kV
Note: Maximum ratings are absolute ratings; exceeding any one of these values may
cause irreversible damage to the integrated circuit.
3.2
Operating Range
40 C < Tj < 150 C
Parameter
Symbol
Limit Values
min.
Unit
Remarks
max.
Supply voltage
VS
VUVOFF 42
After VS rising
above VUVON
Input voltages HS
VIH
VIL
IST
Tj
0.3
15
0.3
20
mA
40
150
Input voltages LS
Output current
Junction temperature
Note: In the operating range the functions given in the circuit description are fulfilled.
Data Sheet
2001-02-01
BTS 7710 G
3.3
Electrical Characteristics
Symbol
Limit Values
min.
typ.
max.
IH1 = IH2 = 0 V
Tj = 25 C
12
IH1 = IH2 = 0 V
1.5
2.6
mA
Supply current
IS
IS
IH1 or IH2 = 5 V
VS = 12 V
5.2
mA
Leakage current of
highside switch
ISH LK
VIH = VSH = 0 V
ILKCL =
IFH + ISH
10
mA
IFH = 3 A
10
100
nA
10
VIL = 20 V;
VDSL = 0 V
Tj = 25 C
VIL = 0 V
VDSL = 40 V
4.5
1.8
3.2
IIL
VUVON
Switch-OFF voltage
VUVOFF
Switch ON/OFF hysteresis VUVHY
Switch-ON voltage
Data Sheet
VS increasing
VS decreasing
VUVON VUVOFF
2001-02-01
BTS 7710 G
3.3
Symbol
Limit Values
min.
typ.
max.
Output stages
Inverse diode of high-side
switch; Forward-voltage
VFH
0.8
1.2
IFH = 3A
VFL
0.8
1.2
IFL = 3 A
Static drain-source
on-resistance of highside
switch
RDS ON H
70
90
ISH = 1 A
Tj = 25 C
Static drain-source
on-resistance of lowside
switch
RDS ON L
40
50
ISL = 1 A;
VIL = 5 V
Tj = 25 C
RDS ON
260
RDS ON H + RDS ON L
ISH = 1 A;
15
18
20
13
15
17
11
13
Tj = 40 C
Tj = + 25 C
Tj = + 150 C
15
35
VDSL = 3 V
155
180
190
150
170
180
10
T = TjSD TjSO
ISCP H
ISCP H
ISCP H
RO
Thermal Shutdown
Temperature hysteresis
Data Sheet
10
2001-02-01
BTS 7710 G
3.3
Symbol
Limit Values
min.
typ.
max.
0.2
0.6
10
VST L
IST LK
VST Z
5.4
IST = 1.6 mA
VST = 5 V
IST = 1.6 mA
tON
75
160
RLoad = 12
VS = 12 V
Turn-OFF-time;
to 10% VSH
tOFF
60
160
RLoad = 12
VS = 12 V
1.5
V/s RLoad = 12
VS = 12 V
2.0
V/s RLoad = 12
VS = 12 V
dtOFF
td_ON_L
14
ns
resistive load
ISL = 3 A; VS = 30 V
Switch-ON time;
VIL= 5V; RG = 7
tON_L
25
40
ns
resistive load
ISL = 3 A; VS = 30 V
td_OFF_L
36
55
ns
resistive load
ISL = 3 A; VS = 30 V
Switch-OFF time;
VIL= 5V; RG = 7
tOFF_L
22
33
ns
resistive load
ISL = 3 A; VS = 30 V
Data Sheet
11
2001-02-01
BTS 7710 G
3.3
Symbol
Limit Values
min.
typ.
max.
nC
10
16
nC
QIS
QID
QI
28
43
nC
V(plateau)
2.75
ISL = 3 A; VS = 14 V
ISL = 3 A; VS = 14 V
ISL = 3 A; VS = 14 V
VIL = 0 to 10 V
ISL = 3 A; VS = 14 V
VIH High
VIH Low
VIH HY
IIH High
IIH Low
RI
VIH Z
2.5
0.3
15
30
60
20
VGH = 5 V
VGH = 0.4 V
2.7
5.5
5.4
IGH = 1.6 mA
VIL th
0.9
1.7
2.2
IDL = 1 mA
Note: The listed characteristics are ensured over the operating range of the integrated
circuit. Typical characteristics specify mean values expected over the production
spread. If not otherwise specified, typical characteristics apply at TA = 25 C and
the given supply voltage.
Data Sheet
12
2001-02-01
BTS 7710 G
VS=12V
IS
CL
100F
CS
470nF
IFH1,2
DHVS
IST LK
IST
5,10,19,24
ST
Diagnosis
VST
IIH1
VSTL
IH1
IH2
VIH1
VIH2
-VFH1
RO1
GND
VDSH1
-VFH2
Gate
Driver
VSTZ
IIH1
VDSH2
Gate
Driver
RO2
20,21
12,14,15,18
SH2
ISH2
DL2
IDL2
IDL LK 2
VUVON
SH1
ISH1
VUVOFF
DL1
IDL1
IGND
22,23
ILKCL
1,3,25,28
IDL LK 1
VIL1
IIL1
IL1
IIL2
IL2
13
VIL th 1
VIL2
26,27
VIL th 2
16,17
SL1
SL2
ISCP L 1
ISCP L 2
ISL1
ISL2
VDSL1
VDSL2
-VFL1
-VFL2
Figure 3
Test Circuit
HS-Source-Current
ISH1,2
ISCP H
IDL LK
Data Sheet
13
2001-02-01
BTS 7710 G
Watchdog
Reset
Q
RQ
100 k
WD R
CQ
22F
TLE
4278G
VS=12V
CS
10F
D01
Z39
CD
47nF
VCC
DHVS
5,10,19,24
RS
ST
10 k
Diagnosis
IH1
IH2
Gate
Driver
RO1
GND
Gate
Driver
RO2
20,21
12,14,15,18
SH2
DL2
P
22,23
1,3,25,28
IL1
IL2
13
26,27
GND
SL1
SH1
DL1
16,17
SL2
Figure 4
Application Circuit
Data Sheet
14
2001-02-01
BTS 7710 G
Package Outlines
x
8 ma
7.6 -0.2 1)
+0.09
0.35 x 45
0.23
2.65 max
2.45 -0.2
0.2 -0.1
P-DSO-28-14
(Plastic Transistor Single Outline Package)
0.4 +0.8
1.27
0.35 +0.15 2)
0.1
0.2 28x
28
10.3 0.3
15
18.1 -0.4 1)
14
1) Does not include plastic or metal protrusions of 0.15 max rer side
2) Does not include dambar protrusion of 0.05 max per side
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book Package Information.
SMD = Surface Mounted Device
Data Sheet
15
GPS05123
GPS05123
Index Marking
Dimensions in mm
2001-02-01
BTS 7710 G
Published by
Infineon Technologies AG i Gr.,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address
list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body, or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
Data Sheet
16
2001-02-01