PD - 97113

IRGB4064DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE

VCES = 600V

Features

Low VCE (on) Trench IGBT Technology

Low Switching Losses
Maximum Junction temperature 175 C
5s SCSOA
Square RBSOA
100% of The Parts Tested for ILM
Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free Package

IC = 10A, TC = 100C
G

tsc > 5s, Tjmax = 175C

E

VCE(on) typ. = 1.6V

n-channel
C

Benefits

High Efficiency in a Wide Range of Applications

Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI

E
G

TO-220AB

Gate

Collector

Emitter

Absolute Maximum Ratings

Parameter
VCES
IC@ TC = 25C
IC@ TC = 100C
ICM
ILM
IF@TC=25C
IF@TC=100C
IFM
VGE
PD @ TC =25
PD @ TC =100
TJ
TSTG

Max.

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current c

Units

600
20
10
40
40
20
10
40
20
30
101
50

Diode Continuous Forward Current

Diode Continuous Forward Current
Diode Maximum Forward Current d
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 Screw

V
W
C

-55 to + 175
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)

Thermal Resistance
Parameter
RJC
RJC
RCS
RJA
Wt

Junction-to-Case - IGBT e
Junction-to-Case - Diode e
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount e
Weight

Min.

Typ.

Max.

Units

0.50

1.44

1.49
3.66

62

C/W
g

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11/28/06

IRGB4064DPbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter

Min. Typ. Max. Units

V(BR)CES

Collector-to-Emitter Breakdown Voltage

600

V(BR)CES/TJ

Temperature Coeff. of Breakdown Voltage

0.47

1.6

1.91

VCE(on)

Collector-to-Emitter Saturation Voltage

1.9

2.0

Conditions
VGE = 0V, IC = 100A

IC = 10A, VGE = 15V, TJ = 25C

V

5,6,7,9,

IC = 10A, VGE = 15V, TJ = 175C

10 ,11

4.0

6.5

VGE(th)/TJ

Threshold Voltage temp. coefficient

-11

gfe

Forward Transconductance

6.9

VCE = 50V, IC = 10A, PW = 80s

ICES

Collector-to-Emitter Leakage Current

25

VGE = 0V, VCE = 600V

328

2.5

3.1

IF = 10A

1.7

100

nA

VGE = 20V

IGES

Gate-to-Emitter Leakage Current

IC = 10A, VGE = 15V, TJ = 150C

Gate Threshold Voltage

Diode Forward Voltage Drop

CT6

V/C VGE = 0V, IC = 500A (-55C-175C)

VGE(th)

VFM

Ref.Fig

VCE = VGE, IC = 275A

9,10,11,12

mV/C VCE = VGE, IC = 1.0mA (25C - 175C)

VGE = 0V, VCE = 600V, TJ = 175C

IF = 10A, TJ = 175C

Switching Characteristics @ TJ = 25C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Qg

Total Gate Charge (turn-on)

21

32

Qge

Gate-to-Emitter Charge (turn-on)

5.3

8.0

Qgc

Gate-to-Collector Charge (turn-on)

8.9

13

Conditions

Ref.Fig

IC = 10A
nC

24

VGE = 15V

CT1

VCC = 400V

Eon

Turn-On Switching Loss

29

71

Eoff

Turn-Off Switching Loss

200

308

Etotal

Total Switching Loss

229

339

td(on)

Turn-On delay time

27

37

tr

Rise time

15

23

td(off)

Turn-Off delay time

79

90

tf

Fall time

21

30

Eon

Turn-On Switching Loss

99

Eoff

Turn-Off Switching Loss

316

Etotal

Total Switching Loss

415

Energy losses include tail & diode reverse recovery

td(on)

Turn-On delay time

27

IC = 10A, VCC = 400V, VGE = 15V

tr

Rise time

16

td(off)

Turn-Off delay time

98

IC = 10A, VCC = 400V, VGE = 15V

J

RG = 22, L = 1.0mH, TJ = 25C

CT4

Energy losses include tail & diode reverse recovery

IC = 10A, VCC = 400V, VGE = 15V

ns

RG = 22, L = 1.0mH, TJ = 25C

CT4

IC = 10A, VCC = 400V, VGE = 15V

13,15

RG=22, L=1.0mH, TJ = 175C

CT4

ns

f

RG = 22, L = 1.0mH, TJ = 175C

WF1,WF2
14,16
CT4
WF1,WF2

tf

Fall time

33

Cies

Input Capacitance

594

Coes

Output Capacitance

49

VCC = 30V

Cres

Reverse Transfer Capacitance

17

f = 1.0Mhz

RBSOA

Reverse Bias Safe Operating Area

FULL SQUARE

SCSOA

Short Circuit Safe Operating Area

VCC = 400V, Vp =600V

Erec

Reverse Recovery Energy of the Diode

191

TJ = 175C

trr

Diode Reverse Recovery Time

62

ns

VCC = 400V, IF = 10A

20,21

Irr

Peak Reverse Recovery Current

16

VGE = 15V, Rg = 22, L=1.0mH

WF3

pF

VGE = 0V

TJ = 175C, IC = 40A
VCC = 480V, Vp =600V

22

4
CT2

Rg = 22, VGE = +15V to 0V

Rg = 22, VGE = +15V to 0V

22, CT3
WF4
17,18,19

Notes:
VCC = 80% (VCES), VGE = 15V, L = 28 H, RG = 22 .
Pulse width limited by max. junction temperature.
R is measured at TJ approximately 90C
Refer to AN-1086 for guidelines for measuring V(BR)CES safely

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24

120

20

100

16

80
Ptot (W)

IC (A)

IRGB4064DPbF

12

60

40

20

0
0

20

40

60

80 100 120 140 160 180

20

40

60

80 100 120 140 160 180

TC (C)

TC (C)

Fig. 1 - Maximum DC Collector Current vs.

Case Temperature

Fig. 2 - Power Dissipation vs. Case

Temperature

100

100

10sec
100sec

10

IC A)

IC (A)

1msec
DC

10

1
Tc = 25C
Tj = 175C
Single Pulse
1

0.1
1

10

100

10

1000

100

VCE (V)

VCE (V)

Fig. 4 - Reverse Bias SOA

TJ = 175C; VCE = 15V

Fig. 3 - Forward SOA,

TC = 25C; TJ 175C
40

VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V

20

10

VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V

20

10

0
0

10

VCE (V)

Fig. 5 - Typ. IGBT Output Characteristics

TJ = -40C; tp = 80s

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VGE = 18V

30

ICE (A)

ICE (A)

40

VGE = 18V

30

1000

10

VCE (V)

Fig. 6 - Typ. IGBT Output Characteristics

TJ = 25C; tp = 80s

IRGB4064DPbF
40

80
VGE = 18V

VGE = 12V

60

VGE = 8.0V

50

VGE = 10V

IF (A)

ICE (A)

30

-40C
25C
175C

70

VGE = 15V

20

40
30

10

20
10

0
0

10

0.0

1.0

2.0

3.0

VCE (V)

20

18

18

16

16

ICE = 5.0A
VCE (V)

VCE (V)

ICE = 20A

ICE = 10A

12

ICE = 20A

10
8

2
0

0
5

10

15

20

10

15

20

VGE (V)

VGE (V)

Fig. 9 - Typical VCE vs. VGE

TJ = -40C

Fig. 10 - Typical VCE vs. VGE

TJ = 25C

20

40

18
16

TJ = 25C
TJ = 175C

30

ICE = 5.0A

14

ICE = 10A

12

ICE = 20A

10

ICE (A)

VCE (V)

7.0

ICE = 5.0A

14

ICE = 10A

10

6.0

Fig. 8 - Typ. Diode Forward Characteristics

tp = 80s

20

12

5.0

VF (V)

Fig. 7 - Typ. IGBT Output Characteristics

TJ = 175C; tp = 80s

14

4.0

8
6

20

10

4
2
0

0
5

10

15
VGE (V)

Fig. 11 - Typical VCE vs. VGE

TJ = 175C

20

10

15

20

VGE (V)

Fig. 12 - Typ. Transfer Characteristics

VCE = 50V; tp = 10s

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IRGB4064DPbF
1000

600

Swiching Time (ns)

500

Energy (J)

400
EOFF

300
200

tdOFF

100

tF
tdON
tR

10

EON

100
0
0

12

16

20

24

12

I C (A)

20

24

IC (A)

Fig. 14 - Typ. Switching Time vs. IC

TJ = 175C; L=1mH; VCE= 400V
RG= 22; VGE= 15V

Fig. 13 - Typ. Energy Loss vs. IC

TJ = 175C; L = 1mH; VCE = 400V, RG = 22; VGE = 15V.
350

1000

EOFF

300

16

Swiching Time (ns)

Energy (J)

250

EON

200
150
100

tdOFF

100

tdON
tF

50

tR

0
0

25

50

75

100

10

125

25

50

RG ()

125

Fig. 16- Typ. Switching Time vs. RG

TJ = 175C; L=1mH; VCE= 400V
ICE= 10A; VGE= 15V

24

20

20

16

RG =10

16

RG =22

12

IRR (A)

IRR (A)

100

RG ()

Fig. 15 - Typ. Energy Loss vs. RG

TJ = 175C; L = 1mH; VCE = 400V, ICE = 10A; VGE = 15V

RG =47

12

RG = 100
4

0
0

12

16

20

IF (A)

Fig. 17 - Typical Diode IRR vs. IF

TJ = 175C

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75

24

25

50

75

100

125

RG ()

Fig. 18 - Typical Diode IRR vs. RG

TJ = 175C; IF = 10A

IRGB4064DPbF
20

900

10

20A

22

800
47
15
IRR (A)

QRR (nC)

700

10

100
10A

600
500
5.0A
400

300
0

200

400

600

800

1000

1200

500

diF /dt (A/s)

1500

Fig. 20 - Typical Diode QRR

VCC= 400V; VGE= 15V; TJ = 175C

Fig. 19- Typical Diode IRR vs. diF/dt

VCC= 400V; VGE= 15V;
ICE= 10A; TJ = 175C

80

16

300
RG = 10
RG = 22

150

RG = 47

100
RG = 100
50

70

Isc

12

60

10

50

40

30

20

10
0

0
0

8 10 12 14 16 18 20 22

Current (A)

200

Tsc

14

Time (s)

250

IRR (A)

1000

diF /dt (A/s)

10

12

14

16

VGE (V)

IF (A)

Fig. 22- Typ. VGE vs Short Circuit Time

VCC=400V, TC =25C

Fig. 21 - Typical Diode ERR vs. IF

TJ = 175C
1000

16
Cies

14

300V

400V

100

VGE (V)

Capacitance (pF)

12

Coes

10
8
6

10

Cres

4
2
0

1
0

20

40

60

VCE (V)

80

Fig. 23- Typ. Capacitance vs. VCE

VGE= 0V; f = 1MHz

100

12

16

20

24

Q G, Total Gate Charge (nC)

Fig. 24 - Typical Gate Charge vs. VGE

ICE = 10A, L=600H

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IRGB4064DPbF

Thermal Response ( Z thJC )

10

D = 0.50
0.20

0.10
0.1

0.05

J
1

R2
R2

R3
R3

R4
R4
C

Ci= i/Ri
Ci i/Ri

0.02
0.01

R1
R1

Ri (C/W) (sec)
0.007362
0
0.342317 0.000048
0.647826 0.000192
0.493231 0.001461

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

SINGLE PULSE
( THERMAL RESPONSE )

0.01
1E-006

1E-005

0.0001

0.001

0.01

t1 , Rectangular Pulse Duration (sec)

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

Thermal Response ( Z thJC )

D = 0.50
1

0.20
0.10
0.05

0.1

0.02

0.01

R1
R1
J
1

Ci= i/Ri

0.01

R2
R2
2

Ri (C/W)

(sec)

1.939783 0.000975
1.721867 0.006135

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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IRGB4064DPbF
L

L
DUT

1K

Fig.C.T.1 - Gate Charge Circuit (turn-off)

Fig.C.T.3 - S.C.SOA Circuit

Fig.C.T.5 - Resistive Load Circuit

VCC

80 V

+
-

DUT
Rg

480V

Fig.C.T.2 - RBSOA Circuit

Fig.C.T.4 - Switching Loss Circuit

Fig.C.T.6 - Typical Filter Circuit for

V(BR)CES Measurement

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IRGB4064DPbF
500

10
TEST CURRENT

tf

25

350

tr
275

90% ICE

VCE (V)

200

ICE (A)

VCE (V)

200

15

125

10

5% ICE

100

10% test current

2
5% VCE
Eoff Loss

0
-0.04

0.06

-25
-0.1

0.16

time(s)

Eon Loss
0.1

110

QRR
tRR

90

70

450

VC
E

Vce (V)

Peak
IRR

IF (A)

VF (V)

-5

375
300

-175
-250

Fig. WF2 - Typ. Turn-on Loss Waveform

@ TJ = 175C using Fig. CT.4

10

-100

time (s)

Fig. WF1 - Typ. Turn-off Loss Waveform

@ TJ = 175C using Fig. CT.4

-25

5% VCE

50

IC

50

225

-10

30

150

-400

-15

10

75

-475
-0.05

-20

-10

-325

0.15

10%
Peak
IRR

0.35

time (S)
WF.3- Typ. Reverse Recovery Waveform
@ TJ = 175C using CT.4

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-5

Ice (A)

300

20

90% test current

ICE (A)

400

10

Time (uS)
WF.4- Typ. Short Circuit Waveform
@ TJ = 25C using CT.3

IRGB4064DPbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

EXAMPLE: T HIS IS AN IRF1010
LOT CODE 1789
AS S EMBLED ON WW 19, 2000
IN THE ASS EMBLY LINE "C"
Note: "P" in as s embly line pos ition
indicates "Lead - Free"

PART NUMBER

INT ERNATIONAL
RECTIFIER
LOGO

DAT E CODE
YEAR 0 = 2000
WEEK 19
LINE C

AS S EMBLY
LOT CODE

TO-220AB packages are not recommended for Surface Mount Application.

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/06

10

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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/