ELECTRONIC DEVICES AND CIRCUITS

BRIEF NOTES

UNIT I :: ELECTRON DYNAMICS: CRO

e 1.602 1019 C , m 9.110 31 kg , F force on electron in uniform electric field E

eE
F=eE; acceleration a
m
If electron with velocity ' v ' moves in field ' E ' making an angle ' ' can be
resolved to v sin , v cos .

Effect of Magnetic Field B on Electron.

When B & Q are perpendicular path is circular

When slant with ' ' path is # Helical.

EQUATIONS OF CRT

ELECTROSTATIC DEFLECTION SENSITIVITY

MAGNETIC DEFLECTION SENSITIVITY

Velocity due to voltage V,

When E and B are perpendicular and initial velocity of electron is zero, the path is

Se

S m lL

mv
2 m
; Period ' t '
Be
Be

lL
2dVa

e
2mVa

2eV
m

Cycloidal in plane perpendicular to B & E. Diameter of Cycloid=2Q, where

E
Be
,
.
B
m

u
,

UNIT II :: SEMICONDUCTOR JUNCTION

Si , Ge have 4 electrons in covalent bands. Valency of 4. Doping with trivalent

elements makes ' p ' ,
Pentavalent elements makes ' n ' semiconductor.

Conductivity

e n n p p where n, p are concentrations of Dopants.

n & p are mobilitys of electron and hole respectively.

Diode equation

Vd

Id Is e

-1-

nVT

VT

kT
; K= Boltzman Constant
q

Vd VT
kT N A N P
; Vo
ln

I d
I
q ni 2

rd

T 00 C 273; q 1.602 1019 C

Diode drop changes

Diffusion capacitance is

Transition capacitance

RECTIFIERS

COMPARISION

@ 2.2mv / 0 C ,

cd

Leakage current

I s doubles on 100 C

dq
of forward biased diode it is I
dv

CT is capacitance of reverse biased diode V n n 1 to 1

2
3

HW

VDC

Vm

Vrms

Vm

-2-

FW CT

FW BR

2Vm

2Vm

Vm

Vm

1.21

0.482

0.482

40.6%

81%

81%

Vm

2 Vm

Vm

Ripple factor

Rectification efficiency

PIV
Peak Inverse Voltage

UNIT III :: FILTERS

Harmonic Components in FW Output,

v0

2Vm 4 1
1

cos 2 wt cos 4 wt .....

3
15

Capacitance Input Filter,

Inductor Input Filter,

Critical inductance
is that value at which
diode conducts continuously, in or half cycle.

LC FILTER,

1.2
2
, for 50 Hz, L in H , C in F .
or
LC
12 LC
2

LC LADDER,

FILTER,

RC FILTER,

-3-

Xc
2 X c1 X c2
.
.
..... n
3 X L1 X L2
X Ln

FWD Bias Normal

Diode 0.7 V Drop
Reverse Bias

ZENER DIODE

ZENER REGULATOR

Is

rz

TUNNEL DIODE

Conducts in

-ve resistance b-c, normal diode c-d.

Vi Vz
;Vi Vz
Rs
Vz

I z

, r , Quantum mechanical tunneling in region a-0-b-c.

b

I p = peak current, I v = valley current; v p =peak voltage 65 mV, vv =valley voltage

0.35 V. Heavy Doping, Narrow Junction , Used for switching & HF oscillators.

VARACTOR DIODE

Used in reverse bias & as tuning variable capacitance.

CT

1
CB
is figure of merit, Self resonance f o
2 LS CT
C25

VT VR

; n=0.3 for diffusion, n=0.5 for alloy junction,

-4-

CT

Co
1 VR

VT

PHOTO DIODES

Diode used in reverse bias for light detection.

Different materials have individual peak response to a range of wave lengths.

UNIT - IV

BJT, Bipolar Junction Transistor has 2 Junctions: BE, BC

Components of current are

I nE , I pE at EB junction where

Emitter efficiency, *

I nc
transportation factor.
I nE

BE f / b; BC r / b

I e Ib Ic

Ic
I
; c
Ie
Ib

Doping Emitter Highest

Base Lowest

I e Ic Ib
-5-

I nE
I
nE
I nE I pE I E

I CBO , I CEO , I EBO

Leakage currents :

I CEO 1 I CBO

3 Configurations are used on BJT, CE, CB & CC

Common Emitter, VI characteristics

Ri hie

IC
IB

VCE

V
VBE
re ; rce r0 ce
I B
I c

Input Characteristics

Circuit

Output Characteristics

AC Equivalent Circuit

COMMON BASE VI CHARACTERISTICS

-6-

IC

;
IE
1

hib

I
VEB
re ; h fb C
I E
Ie

VCB

; rcb

Vcb
I c

AC Equivalent Circuit

AMPLIFIER COMPARISON
COMPARISON
BE
SATURATION
ACTIVE
CUT OFF

f/b
f/b
r/b

CB

CE

CF

Ri

LOW

MED

HIGH

AI

AI

AV

High

High

<1

Ro

High

High

low

BC
f/b
r/b
r/b

UNIT - V
h- parameters originate from equations of amplifier

vi hi ii hr v2 , i2 h f ii h0 v2
vi & ii are input voltage and current
v2 & i2 are output voltage and current

hi input impedance hie , hib , hic re , re , 1 re

h f current gain h fe , h fb , h fc

hr reverse voltage transfer hre , hrb , hrc

ho output admittance hoe , hob , hoc

FIELD EFFECT TRANSISTOR, FET is Unipolar Device

, , 1

-7-

Construction

n-Channel

S=Source, G=Gate, D=Drain

GS Junction in Reverse Bias Always

Vgs Controls Gate Width

VI CHARACTERSTICS

Transfer Characteristics

p-Channel

Circuit

Forward Characteristics

Shockley Equation

V
g m g m 0 1 gs

V p

V
I d I dss 1 gs ,

V p

MOSFET: Metal Oxide Semiconductor FET, IGFET

Depletion Type Mosfet

Symbols

Depletion Type MOSFET can work width

Enhancement Mosfet

Vgs 0 and Vgs 0

MOSFET
High

Transfer
Characteristics

Forward
Characteristics

-8-

Ri 1010

JPET

108

R0 50 k

1m

Depletion
Enhancement Mode

Depletion
Mode

Delicate

Rugged

Enhancement MOSFET operates with,

Forward Characteristics

Vgs Vt , Vt Threshold Voltage

Transfer Characteristics

VDS ( sat ) VGS VT , I ds (ON ) K VGS VT

COMPARISIONS

JFET I D Table
Vgs

ID

BJT

FET

I DSS

Current controlled

Voltage controlled

High gain

Med gain

Bipolar

Unipolar

Temp sensitive

Little effect of T

High GBWP

Low GBWP

0.3

VP

I DSS

0.5

VP

I DSS

VP

2
4

UNIT VI :: BIASING in BJT & JFET

Fixing Operating Point Q is biasing

Fixed Bias

VCC I B RB VBE

Emitter Stabilized
Fixed Bias

VCC I B RB VBE 1 Re

-9-

Feedback Bias

VCC 1 RC I B I B RB VBE

VB

VCC R2
,
R1 R2

VE VB VBE ; I C

VE

RE
Vcc 1 Rc Re Ib
Ib.Rb Vbe

VOLTAGE DIVIDER BIAS

EMITTER STABILIZED
FIXED BIAS

STABILITY EQUATIONS

I c S1I c 0 S 2 VBE S3

S1

S must be as small as possible, Most ideal value =1

How to do determine stability factor for bias arrangement?

1
I C
I C
I
S
; S2
; S3 C , STABILITY FACTOR
dI
1 B
I CO
VBE

dI C
Derive

substitute in S

AV AI

Zl
, Z i measured with output shorted
Zi

Amplifier formulae:

Z0 measured with input shorted

CE amplifier A I h fe or ;

VT
R
; Av L r ;
e
I
R
CB amplifier A1 ; Av L ; Zi re
re
Z i re; re

CC amplifier A I 1 ; AV 1

H Parameter Model CE

AI

h fe
1 hoe zl

; AV h fe

hie

Ri

; Ri h fe 1 RE hie

ZL
hie

- 10 -

dI B
and
dI C

CB amplifier Ri hib ; AI h fb ; AV h fb .

FET

CS amplifier

RL
hib

AV g m Rd || rd ; Z 0 Rd

Common Gate Amplifier

Common Drain

RC Coupled Amplifiers

AV

AV g m Rd , Z i

Rs
1 g m Rs

g m Rs
1
; Zo
1 g m Rs
gm

1
tan 1 f1 f ; A
f

1 j 1
f

Slope 6dB / octave, 20dB / decade , Octave= f or 2 f

2
f is beta cut off frequency where h fe falls by 0.707
1
If cut off frequency f1
,
2 RC

f is cut off frequency where 0.707

f t is h fe 1 gain bandwidth product.

UNIT VII :: FEED BACK AMPLIFIERS

Amplifier gain stands for any of Voltage amplifier, Current amplifier, Trans resistance
Trans admittance amplifier

Af

X
X
A
; A 0; f
1 A
Xi
X0

Xi Xs X f

Feed back reduces noise distortion, gain variation due to parameters, increases BW.

Ve feed back amplifier depends on

1 A

|1 A | 1 ve fb , 1 ve f b

is called de-sensitivity factor.

Feed back amplifiers

Voltage series, voltage shunt; Current series, current shunt

for voltage, current series

zi f zi 1 A
A
, for all
1 A
zi
zi f
, for voltage or current shunt
1 A
zo f zo 1 A , for current series, shunt
Af

z0
, for voltage series and shunt.
1 A
- 11 -

zo f

UNIT VIII :: OSCILLATORS

Barkausen Criterion for oscillation loop gain =1,

HARTLEY OSCILLATOR

=00, 3600.

1
,
2 LT C

LT L1 L2 M , ;

L2
,
L1

COLLPITS OSILLATOR,

L1 , L2 replaced by C1 , C2 ,
f

C replaced by L;

CRYSTAL OSCILLATORS

Tuned ckt replaced with Crystal

1
2 LCT

1
,
LC
1
p
LCT

Phase shift oscillator

FET MODEL
f

1
, A 29 ,
2 6 RC

Minimum RC sections 3

BJT MODEL
1

4 RC , A 29 ,

2 RC 6

Minimum RC sections 3

Wein Bridge Oscillator

1
,
2 R1 R2C1C2
- 12 -

if R1=R2=R, C1=C2=C , f

1
1
3
; A

2 RC

- 13 -