DMN4468LSS

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary
ID max
TA = +25C

Low On-Resistance

Low Input Capacitance

14m @ VGS = 10V

10A

Fast Switching Speed

20m @ VGS = 4.5V

8A

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability

V(BR)DSS

NEW PRODUCT

Features and Benefits

RDS(ON) max

30V

Description and Applications

Mechanical Data

This MOSFET has been designed to minimize the on-state

resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.

Case: SO-8

Case Material: Molded Plastic, Green Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Backlighting

Terminal Connections: See Diagram Below

Power Management Functions

Weight: 0.072 grams (approximate)

DC-DC Converters

SO-8

Top View

G
S
Equivalent circuit

Top View
Internal Schematic

Ordering Information (Note 4)

Part Number
DMN4468LSS-13
Notes:

Case
SO-8

Packaging
2500 / Tape & Reel

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporateds definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information
8

N4468LS

N4468LS

YY WW

YY WW

Chengdu A/T Site

DMN4468LSS
Document number: DS31773 Rev. 5 - 2

= Manufacturers Marking
N4468LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

Shanghai A/T Site

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DMN4468LSS
Maximum Ratings (@TA = +25C, unless otherwise specified.)
Characteristic

Symbol
VDSS
VGSS

Unit
V
V

IDM

Value
30
20
10
9
50

Symbol
PD
RJA
RJc
TJ, TSTG

Value
1.52
82
8.2
-55 to +150

Units
W
C/W
C/W
C

Drain-Source Voltage
Gate-Source Voltage
Steady
State
Pulsed Drain Current (10s pulse, duty cycle = 1%)

NEW PRODUCT

Continuous Drain Current (Note 5)

TA = +25C
TA = +70C

ID

A
A

Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

Electrical Characteristics (@TA = +25C, unless otherwise specified.)

Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:

Symbol

Min

Typ

Max

Unit

Test Condition

BVDSS
IDSS
IGSS

30

1.0
100

V
A
nA

VGS = 0V, ID = 250A

VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V

VGS(th)

1.05

1.95

RDS (ON)

11
15

14
20

|Yfs|
VSD

8
0.73

0.95

S
V

VDS = VGS, ID = 250A

VGS = 10V, ID = 11.6A
VGS = 4.5V, ID = 10A
VDS = 5V, ID = 11.6A
VGS = 0V, IS = 1A

Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf

867
85
81
1.39
18.85
2.59
6.15
5.46
14.53
18.84
6.01

pF
pF
pF

nC
nC
nC
ns
ns
ns
ns

VDS = 10V, VGS = 0V,

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 10V, VDS = 15V,
ID =11.6A
VDD = 15V, VGS = 10V,
RL = 1.3, RG = 3, ID = 1A

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.

DMN4468LSS
Document number: DS31773 Rev. 5 - 2

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DMN4468LSS
30

30
VGS = 8.0V

ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

25

VGS = 4.5V

20

15

VGS = 3.0V

10
VGS = 2.8V

VDS = 5V

20

15

10
TA = 150C

5
VGS = 2.2V

2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic

0.02
VGS = 4.5V

0.01

5
10
15
20
25
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage

RDSON, DRAIN-SOURCE ON-RESISTANCE ()

1.2

1.0
VGS = 4.5V
ID = 10A

0.8
VGS = 10V
ID = 11.6A

3.5

VGS = 4.5V

0.03
TA = 150C
TA = 125C

0.02

TA = 85C
TA = 25C
TA = -55C

0.01

10
15
20
25
ID, DRAIN CURRENT (A)

30

0.03

VGS = 4.5V
ID = 10A

0.02

VGS = 10V
ID = 11.6A

0.01

-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (C)

Fig. 5 On-Resistance Variation with Temperature

Document number: DS31773 Rev. 5 - 2

1.5
2
2.5
3
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

1.4

DMN4468LSS

T A = -55C

0.04

30

1.6

0.6
-50

0.03

TA = 85C
TA = 25C

0.04

TA = 125C

VGS = 2.5V

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)

NEW PRODUCT

25

0
-50

-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (C)

Fig. 6 On-Resistance Variation with Temperature

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20

2.0

16

1.6

IS, SOURCE CURRENT (A)

VGS(TH), GATE THRESHOLD VOLTAGE (V)

2.4

ID = 250A

1.2

TA = 25C

12

ID = 1mA

0.8

0.4
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature

10,000

0.4

0.6
0.8
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current

10,000

IDSS, LEAKAGE CURRENT (nA)

C, CAPACITANCE (pF)

f = 1MHz

1,000
Ciss

Coss

100

Crss

T A = 150C

1,000
T A = 125C

100

TA = 85C

10

TA = 25C

10
0

5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance

30

TA = -55C

5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)

30

Fig. 10 Typical Leakage Current vs. Drain-Source Voltage

100
RDS(on)
Limited

ID, DRAIN CURRENT (A)

NEW PRODUCT

DMN4468LSS

PW = 10s

10

DC

PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
PW = 1ms

0.1

PW = 100s
T J(max) = 150C
T A = 25C
Single Pulse

0.01
0.1

1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 SOA, Safe Operation Area

DMN4468LSS
Document number: DS31773 Rev. 5 - 2

100

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DMN4468LSS

r(t), TRANSIENT THERMAL RESISTANCE

D = 0.7
D = 0.5
D = 0.3

0.1

D = 0.1
D = 0.9
D = 0.05
RJA(t) = r(t) * RJA
RJA = 83C/W

D = 0.02

0.01

P(pk)

D = 0.01

t1

t2
T J - T A = P * R JA(t)
Duty Cycle, D = t1/t2

D = 0.005

D = Single Pulse

0.001
0.00001

0.0001

0.001

0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response

10

100

1,000

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

0.254

NEW PRODUCT

E1 E
A1

Gauge Plane
Seating Plane

Detail A
h

7~9
45

Detail A

A2 A A3
b

e
D

SO-8
Dim
Min
Max
A

1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h

0.35
L
0.62
0.82
0
8

All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X

Dimensions
X
Y
C1
C2

C1
C2

Value (in mm)

0.60
1.55
5.4
1.27

DMN4468LSS
Document number: DS31773 Rev. 5 - 2

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DMN4468LSS
IMPORTANT NOTICE

NEW PRODUCT

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
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Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
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labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright 2013, Diodes Incorporated
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DMN4468LSS
Document number: DS31773 Rev. 5 - 2

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