FFAF60UA60DN

tm

60 A, 600 V, Ultrafast ll Dual Diode

Features
Ultrafast Recovery, Trr < 90 ns (@ IF = 30 A)

The FFAF60UA60DN is an ultrafast ll dual diode with low forward

voltage drop and rugged UIS capability. This device is intended for
use as freewheeling and clamping diodes in a variety of switching
power supplies and other power switching applications. It is specially
suited for use in switching power supplies and industrial applicationa
as welder and UPS application.

Max Forward Voltage, VF = 2.2 V (@ TC = 25C)

600V Reverse Voltage and High Reliability
Avalanche Energy Rated
RoHS Compliant

Applications
Boost Diode in PFC and Switching Mode Power Supply
Welding, UPS and Motor Control Application

Pin Assignments

1. Anode 2. Cathode 3. Anode

Absolute Maximum Ratings

Per leg at TC=25oC unless otherwise noted

Symbol
VRRM

Peak Repetitive Reverse Voltage

Parameter

Rating
600

Unit
V

VRWM

Working Peak Reverse Voltage

600

VR

DC Blocking Voltage

600

IF(AV)

Average Rectified Forward Current

30

IFSM

Non-repetitive Peak Surge Current

60Hz Single Half-Sine Wave

TJ, TSTG

180

Operating and Storage Temperature Range

Thermal Characteristics

-65 to +150

Rating

Unit

Per leg at TC=25oC unless otherwise noted

Symbol
RJC

@ TC = 45oC

Parameter
Maximum Thermal Resistance, Junction to Case

2.4

C/W

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

F60UA60DN

FFAF60UA60DN

TO3PF

30

2009 Fairchild Semiconductor Corporation

FFAF60UA60DN Rev. A

www.fairchildsemi.com

FFAF60UA60DN 60 A, 600 V, Ultrafast ll Dual Diode

November 2009

Symbol

Per leg at TC=25oC unless otherwise noted

Min.

Typ.

Max.

Unit

VF 1

IF = 30 A
IF = 30 A

Parameter
TC = 25oC
TC = 125oC

2.2
2.0

IR1

VR = 600 V
VR = 600 V

TC = 25oC
TC = 125oC

100
150

trr
Irr
Qrr

IF = 30 A, di/dt = 200 A/s

TC = 25oC

90
8
360

ns
A
nC

WAVL

Avalanche Energy ( L = 40 mH)

20

mJ

Notes:
1: Pulse: Test Pulse width = 300 s, Duty Cycle = 2%

Test Circuit and Waveforms

2009 Fairchild Semiconductor Corporation

FFAF60UA60DN Rev. A

FFAF60UA60DN 60 A, 600 V, Ultrafast ll Dual Diode

Electrical Characteristics

www.fairchildsemi.com

Figure 2. Typical Reverse Current vs.

Reverse Voltage

Figure 1. Typical Forward Voltage Drop

vs. Forward Current

10

100

TC = 125 C
TC = 125 C

Reverse Current , IR [A]

Forward Current, IF [A]

10
o

TC = 25 C
o

TC = 75 C

0.1
0.0

0.5
1.0
1.5
Forward Voltage, VF [V]

200
300
400
500
Reverse Voltage, VR [V]

IF = 30A

Reverse Recovery Time, Trr [ns]

Capacitances , Cj [pF]

TC = 25 C

600

150
Typical Capacitance
at 0V = 205pF

150

100

50

0
0.1

1
10
Reverse Voltage, VR [V]

TC = 125 C

120
o

TC = 75 C

90

60
o

TC = 25 C

30

0
100

100

200
di/dt [A/s]

300

400

Figure 6. Forward Current Derating Curve

Figure 5. Typical Reverse Recovery

Current vs. di/dt

40
Average Forward Current, IF(AV) [A]

12
Reverse Recovery Current, Irr [A]

0.1

Figure 4. Typical Reverse Recovery Time

vs. di/dt

200

TC = 125 C

9
o

TC = 75 C

6
o

TC = 25 C

IF = 30A

0
100

TC = 75 C

0.01
100

2.0

Figure 3.Typical Junction Capacitance

200
di/dt [A/s]

2009 Fairchild Semiconductor Corporation

FFAF60UA60DN Rev. A

300

30

20

10

0
25

400

50

75
100
125
o
Case temperature, TC [ C]

150

www.fairchildsemi.com

FFAF60UA60DN 60 A, 600 V, Ultrafast ll Dual Diode

Typical Performance Characteristics

FFAF60UA60DN 60 A, 600 V, Ultrafast ll Dual Diode

Mechanical Dimensions

TO-3PF

Dimensions in Millimeters

2009 Fairchild Semiconductor Corporation

FFAF60UA60DN Rev. A

www.fairchildsemi.com

2009 Fairchild Semiconductor Corporation

FFAF60UA60DN Rev. A

www.fairchildsemi.com