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Features
Applications
13 A, 30 V.
RDS(ON) = 9 m @ VGS = 10 V
RDS(ON) = 12 m @ VGS = 4.5 V
Low Rg (1 Ohm)
Notebook Vcore
ROHS Compliant
DD
DD
DD
DD
G
SS G
S
SS S
SO-8
Pin 1 SO-8
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
VGSS
Gate-Source Voltage
20
Drain Current
ID
Continuous
(Note 1a)
Pulsed
13
50
(Note 1a)
3.0
(Note 1b)
1.2
EAS
(Note 3)
181
mJ
TJ, TSTG
55 to +150
PD
Thermal Characteristics
RJA
(Note 1a)
50
C/W
RJA
(Note 1b)
125
C/W
RJC
(Note 1)
25
C/W
Device
Reel Size
Tape width
Quantity
FDS6298
FDS6298
13
12mm
2500 units
FDS6298 Rev. C1 ( W)
April 2007
Symbol
Parameter
Test Conditions
Min Typ
Max
Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
GateBody Leakage
On Characteristics
VGS = 0 V, ID = 250 A
30
30
mV/C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
100
nA
1.7
mV/C
(Note 2)
VGS(th)
VGS(th)
TJ
RDS(ON)
Static DrainSource
OnResistance
VGS = 10 V, ID = 13 A
VGS = 4.5 V, ID = 12 A
VGS= 10 V, ID = 13 A, TJ=125C
7.4
9.4
11
9
12
15
gFS
Forward Transconductance
VDS = 10 V, ID = 13 A
58
1108
pF
310
pF
109
pF
0.3
1.7
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
RG
Gate Resistance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics
td(on)
tr
(Note 2)
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6
11
20
ns
10
ns
ns
td(off)
27
43
tf
14
ns
Qg
10
14
nC
Qgs
GateSource Charge
nC
Qgd
GateDrain Charge
nC
0.74
1.2
VDS = 15 V, ID = 13 A,
VGS = 5 V
Qrr
VSD
VGS = 0 V, IS = 2.1 A
(Note 2)
27
ns
13
nC
Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RJC is guaranteed by design while RCA is determined by the user'
s board design.
a)
Electrical Characteristics
2.6
VGS = 10V
70
4.5V
4.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
80
6.0V
60
3.5.V
50
40
30
3.0V
20
10
2.4
VGS = 3.0V
2.2
2
1.8
3.5V
1.6
4.0V
1.4
4.5V
0.5
1.5
2.5
10
20
10V
30
40
50
60
70
80
1.8
ID = 13A
VGS = 10V
1.6
ID = 6.5A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
6.0V
1
0.8
1.4
1.2
1
0.8
0.6
-50
-25
25
50
75
100
125
0.024
0.02
0.016
TA = 125oC
0.012
0.008
TA = 25oC
0.004
150
10
80
25oC
TA = -55oC
60
VDS = 5V
70
ID, DRAIN CURRENT (A)
5.0V
1.2
125o
C
50
40
30
20
10
VGS = 0V
10
TA = 125oC
25oC
0.1
-55oC
0.01
0.001
0.0001
0
1.5
2.5
3.5
0.2
0.4
0.6
0.8
1.2
Typical Characteristics
1500
ID = 13A
VDS = 10V
1200
20V
900
600
COSS
300
CRSS
0
0
12
16
20
10
15
20
25
30
100
100
RDS(ON) LIMIT
10
100s
IAS, AVALANCHE CURRENT (A)
f = 1MHz
VGS = 0 V
CISS
15V
CAPACITANCE (pF)
10
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
SINGLE PULSE
RJA = 125oC/W
0.1
TA = 25 C
0.01
0.01
0.1
10
10
25
125
1
0.01
100
0.1
10
100
1000
50
SINGLE PULSE
R JA = 125C/W
TA = 25C
40
30
20
10
0
0.001
0.01
0.1
10
100
Typical Characteristics
1
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
10
100
1000
Typical Characteristics
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
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SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
Product Status
Definition
Advance Information
Formative or In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
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