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FDS6690AS
30V N-Channel PowerTrench SyncFET
General Description

Features

The FDS6690AS is designed to replace a single SO-8

MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON)
and low gate charge.
The FDS6690AS
includes an integrated Schottky diode using Fairchilds
monolithic SyncFET technology. The performance of
the FDS6690AS as the low-side switch in a
synchronous rectifier is close to the performance of the
FDS6690A in parallel with a Schottky diode.

10 A, 30 V.

RDS(ON) max= 12 m @ VGS = 10 V

RDS(ON) max= 15 m @ VGS = 4.5 V

Includes SyncFET Schottky diode

Low gate charge (16nC typical)

High performance trench technology for extremely low

RDS(ON)

Applications

High power and current handling capability

DC/DC converter
Low side notebooks

SO-8

Absolute Maximum Ratings

Symbol

TA=25oC unless otherwise noted

Ratings

Units

VDSS

Drain-Source Voltage

Parameter

30

VGSS

Gate-Source Voltage

20

ID

Drain Current

10

Continuous

(Note 1a)

Pulsed
PD

Power Dissipation for Single Operation

50
(Note 1a)

2.5

(Note 1b)

1.2

(Note 1c)

TJ, TSTG

1
55 to +150

(Note 1a)

50

C/W

(Note 1)

25

C/W

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA

Thermal Resistance, Junction-to-Ambient

RJC

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6690AS

FDS6690AS

13

12mm

2500 units

2008 Fairchild Semiconductor Corporation

FDS6690AS Rev A2(X)

FDS6690AS 30V N-Channel PowerTrench SyncFET

May 2008

Symbol

Parameter

TA = 25C unless otherwise noted

Test Conditions

Min

Typ

Max

Units

Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS

DrainSource Breakdown Voltage

Breakdown Voltage Temperature
Coefficient

VGS = 0 V, ID = 1 mA

Zero Gate Voltage Drain Current

VDS = 24 V,

VGS = 0 V

500

GateBody Leakage

VGS = 20 V,

VDS = 0 V

100

nA

On Characteristics
VGS(th)
VGS(th)
TJ
RDS(on)

30

ID = 10 mA, Referenced to 25C

V
30

mV/C

(Note 2)

Gate Threshold Voltage

Gate Threshold Voltage
Temperature Coefficient
Static DrainSource
OnResistance

VDS = VGS, ID = 1 mA

1.6

ID(on)

OnState Drain Current

VGS = 10 V,

VDS = 5 V

gFS

Forward Transconductance

VDS = 15 V,

ID = 10 A

45

VDS = 15 V,
f = 1.0 MHz

V GS = 0 V,

910

pF

270

pF

100

pF

ID = 10 mA, Referenced to 25C

VGS = 10 V,
ID = 10 A
VGS = 4.5 V,
ID = 8.5 A
VGS=10 V, ID =10A, TJ=125C

10
12
15

mV/C
12
15
19

50

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

RG

Gate Resistance

Switching Characteristics
td(on)

TurnOn Delay Time

tr

TurnOn Rise Time

td(off)

TurnOff Delay Time

tf

TurnOff Fall Time

VGS = 15 mV,

f = 1.0 MHz

2.0

16

ns

VDS = 15 V,
VGS = 10 V,

ID = 1 A,
RGEN = 6

10

ns

(Note 2)

25

40

ns

12

ns

td(on)

TurnOn Delay Time

tr

TurnOn Rise Time

td(off)

TurnOff Delay Time

15

27

ns

tf

TurnOff Fall Time

16

ns

Qg(TOT)

Total Gate Charge at Vgs=10V

16

23

nC

13

VDS = 15 V,
VGS = 4.5 V,

ID = 1 A,
RGEN = 6

11

20

ns

11

20

ns

Qg

Total Gate Charge at Vgs=5V

Qgs

GateSource Charge

2.3

nC

Qgd

GateDrain Charge

3.0

nC

VDD = 15 V,

ID = 10 A

nC

FDS6690AS Rev A2 (X)

FDS6690AS 30V N-Channel PowerTrench SyncFET

Electrical Characteristics

Symbol

Parameter

TA = 25C unless otherwise noted

Test Conditions

Min

Typ

Max

Units

3.5

0.7

DrainSource Diode Characteristics and Maximum Ratings

IS

Maximum Continuous DrainSource Diode Forward Current

VSD
Trr

DrainSource Diode Forward

Voltage
Diode Reverse Recovery Time

IF = 10A,

Qrr

Diode Reverse Recovery Charge

diF/dt = 300 A/s

VGS = 0 V,

IS = 3.5 A

(Note 2)

(Note 3)

0.6
16

nS

nC

Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

a) 50/W when
mounted on a 1 in2
pad of 2 oz copper

b) 105/W when
mounted on a .04 in2
pad of 2 oz copper

c) 125/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
3. See SyncFET Schottky body diode characteristics below.

FDS6690AS Rev A2 (X)

FDS6690AS 30V N-Channel PowerTrench SyncFET

Electrical Characteristics

2.2

50
VGS = 10V

VGS = 4.0V

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

4.0V

ID, DRAIN CURRENT (A)

40
6.0V

4.5V

30
3.0V

20

10
2.5V

1.8
3.5V

1.4

4.5V

6.0V
10V

0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

10

20
30
ID, DRAIN CURRENT (A)

40

50

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.
0.06

1.6
ID = 10A
VGS = 10V

1.45

ID = 5A
RDS(ON), ON-RESISTANCE (OHM)

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

5.0V

0.6

1.3
1.15
1
0.85
0.7

0.05

0.04

0.03
o

TA = 125 C
0.02

0.01

TA = 25oC

-50

-25

0
25
50
75
100
o
TJ, JUNCTION TEMPERATURE ( C)

125

150

Figure 3. On-Resistance Variation with

Temperature.

4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)

10

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.
10

50

VGS = 0V

IS, REVERSE DRAIN CURRENT (A)

VDS = 5V

ID, DRAIN CURRENT (A)

4.0V

40

30

20

TA = 125 C

-55 C

10
25oC

1
TA = 125oC
25oC

0.1

-55oC

0.01

0.001
1

1.5

2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

0.2
0.4
0.6
VSD, BODY DIODE FORWARD VOLTAGE (V)

0.8

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS6690AS Rev A2 (X)

FDS6690AS 30V N-Channel PowerTrench SyncFET

Typical Characteristics

1400

f = 1MHz
VGS = 0 V

ID =10A

1200
8
VDS = 10V

CAPACITANCE (pF)

VGS, GATE-SOURCE VOLTAGE (V)

10

20V

6
15V

1000

Ciss

800
600
Coss

400
200
Crss

0
0

9
12
15
Qg, GATE CHARGE (nC)

18

21

Figure 7. Gate Charge Characteristics.

10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)

30

Figure 8. Capacitance Characteristics.

100

50
P(pk), PEAK TRANSIENT POWER (W)

RDS(ON) LIMIT
100s
1ms

10

10ms
100ms
1s
10s

1
DC
VGS = 10V
SINGLE PULSE
o
RJA = 125 C/W

0.1

TA = 25oC

0.01
0.1

1
10
VDS, DRAIN-SOURCE VOLTAGE (V)

100

SINGLE PULSE
RJA = 125C/W
TA = 25C

40

30

20

10

0
0.001

Figure 9. Maximum Safe Operating Area.

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

ID, DRAIN CURRENT (A)

0.01

0.1

1
t1, TIME (sec)

10

100

1000

Figure 10. Single Pulse Maximum

Power Dissipation.

1
D = 0.5

RJA(t) = r(t) * RJA

RJA = 125 C/W

0.2

0.1

0.1
0.05

P(pk)

0.02
0.01

t1
t2

0.01

TJ - TA = P * RJA(t)
Duty Cycle, D = t1 / t2

SINGLE PULSE

0.001
0.0001

0.001

0.01

0.1

10

100

1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDS6690AS Rev A2(X)

FDS6690AS 30V N-Channel PowerTrench SyncFET

Typical Characteristics

SyncFET Schottky Body Diode

Characteristics
Schottky barrier diodes exhibit significant leakage
at high temperature and high reverse voltage.
This will increase the power in the device.
IDSS, REVERSE LEAKAGE CURRENT (A)

0.1

3A/DIV

Fairchilds SyncFET process embeds a Schottky

diode in parallel with PowerTrench MOSFET.
This diode exhibits similar characteristics to a
discrete external Schottky diode in parallel with a
MOSFET. Figure 12 shows the reverse recovery
characteristic of the FDS6690AS.

0.01

TA = 125oC

0.001
TA = 100oC

0.0001

0.00001
TA = 25oC

0.000001
0

10
15
20
VDS, REVERSE VOLTAGE (V)

25

30

Figure 14. SyncFET body diode reverse

leakage versus drain-source voltage and
temperature.
10nS/DIV

Figure 12. FDS6690AS SyncFET body

diode reverse recovery characteristic.

3A/DIV

For comparison purposes, Figure 13 shows the

reverse recovery characteristics of the body diode
of an equivalent size MOSFET produced without
SyncFET (FDS6690A).

0V

10nS/DIV

Figure 13. Non-SyncFET (FDS6690A)

body diode reverse recovery
characteristic.
FDS6690AS Rev A2(X)

FDS6690AS 30V N-Channel PowerTrench SyncFET

Typical Characteristics (continued)

VDS

BVDSS
tP

VGS
RGE

DUT

VGS

VDS

IAS

VDD

VDD

0V
tp

vary tP to obtain
required peak IAS

IAS
0.01
tAV

Figure 15. Unclamped Inductive Load Test

Circuit

Figure 16. Unclamped Inductive

Waveforms

Drain Current
Same type as
50k

+10V
F

10

1F

VDD
-

VGS

QG(TOT)
10V

DUT

QGD

QGS

VGS
Ig(REF

Charge, (nC)
Figure 17. Gate Charge Test Circuit

VDS

tON
td(ON)

RL

VDS

tr

90%

tOFF
td(OFF
tf
)

90%

VGS
RGEN

Figure 18. Gate Charge Waveform

VDD

DUT

VGSPulse Width 1s

Duty Cycle 0.1%

Figure 19. Switching Time Test

Circuit

10%

0V

90%

VGS
0V

10%

50%
10%

50%

Pulse Width

Figure 20. Switching Time Waveforms

FDS6690AS Rev A2(X)

FDS6690AS 30V N-Channel PowerTrench SyncFET

Typical Characteristics

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2.

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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product development.

Specifications may change in any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves

the right to make changes at any time without notice to improve the design.

Obsolete

Not In Production

This datasheet contains specifications on a product that is discontinued by

Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34

FDS6690AS Rev.A2(X)