DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3483
SWITCHING
N-CHANNEL POWER MOS FET

ORDERING INFORMATION

DESCRIPTION
The 2SK3483 is N-channel MOS Field Effect Transistor
designed for high current switching applications.

PART NUMBER

PACKAGE

2SK3483

TO-251 (MP-3)

2SK3483-Z

TO-252 (MP-3Z)

FEATURES
Low on-state resistance
RDS(on)1 = 52 m MAX. (VGS = 10 V, ID = 14 A)
RDS(on)2 = 59 m MAX. (VGS = 4.5 V, ID = 14 A)
Low Ciss: Ciss = 2300 pF TYP.
Built-in gate protection diode
TO-251/TO-252 package

(TO-251)

ABSOLUTE MAXIMUM RATINGS (TA = 25C)

Drain to Source Voltage (VGS = 0V)

VDSS

100

Gate to Source Voltage (VDS = 0V)

VGSS

20

Drain Current (DC)

ID(DC)

28

ID(pulse)

60

Total Power Dissipation (TC = 25C)

PT

40

Total Power Dissipation (TA = 25C)

PT

1.0

Channel Temperature

Tch

150

Drain Current (Pulse)

Note1

Storage Temperature

Tstg

55 to +150

Single Avalanche Current

Note2

IAS

25

Single Avalanche Energy

Note2

EAS

62.5

mJ

(TO-252)

Notes 1. PW 10 s, Duty Cycle 1%

2. Starting Tch = 25C, RG = 25 , VGS = 20 0 V

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15068EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan

The mark

shows major revised points.

2001

2SK3483
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Zero Gate Voltage Drain Current

IDSS

VDS = 100 V, VGS = 0 V

10

Gate Leakage Current

IGSS

VGS = 20 V, VDS = 0 V

10

VGS(off)

VDS = 10 V, ID = 1 mA

1.5

2.0

2.5

| yfs |

VDS = 10 V, ID = 14 A

9.0

18

RDS(on)1

VGS = 10 V, ID = 14 A

41

52

RDS(on)2

VGS = 4.5 V, ID = 14 A

45

59

Gate Cut-off Voltage

Forward Transfer Admittance

Note

Drain to Source On-state Resistance

Note

Input Capacitance

Ciss

VDS = 10 V

2300

pF

Output Capacitance

Coss

VGS = 0 V

230

pF

Reverse Transfer Capacitance

Crss

f = 1 MHz

120

pF

Turn-on Delay Time

td(on)

VDD = 50 V, ID = 14 A

12

ns

VGS = 10 V

ns

RG = 0

53

ns

ns

Rise Time

tr

Turn-off Delay Time

td(off)

Fall Time

tf

Total Gate Charge

QG

VDD = 80 V

49

nC

Gate to Source Charge

QGS

VGS = 10 V

nC

QGD

ID = 28 A

13

nC

VF(S-D)

IF = 28 A, VGS = 0 V

1.0

Reverse Recovery Time

trr

IF = 28 A, VGS = 0 V

73

ns

Reverse Recovery Charge

Qrr

di/dt = 100 A/s

175

nC

Gate to Drain Charge

Body Diode Forward Voltage

Note

Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25

D.U.T.
L

50

PG.
VGS = 20 0 V

TEST CIRCUIT 2 SWITCHING TIME

RL
RG

PG.

VDD

VGS
VGS
Wave Form

VGS

10%

90%

VDD
VDS
90%

IAS

VDS

ID

VDS

= 1 s
Duty Cycle 1%

TEST CIRCUIT 3 GATE CHARGE

D.U.T.
IG = 2 mA
PG.

50

10%

10%

tr

td(off)

Wave Form

VDD

Starting Tch

90%

VDS

VGS
0

BVDSS

RL
VDD

Data Sheet D15068EJ2V0DS

td(on)
ton

tf
toff

2SK3483
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE

45
40

100
PT - Total Power Dissipation - W

dT - Percentage of Rated Power - %

120

80
60
40
20

35
30
25
20
15
10

5
0

25

50

75

100 125 150 175

25

TC - Case Temperature - C

50

75

100 125 150 175

TC - Case Temperature - C

FORWARD BIAS SAFE OPERATING AREA

100

10

d
ite V)
im 10
L
)
=
on
S( GS
DC
RDat V
(
ID(DC) = 28 A

ID(pulse) = 60 A

10

PW
0

P
10
Li owe
m
m r
s
ite D
d iss
ip
at
io
n

10

1
TC = 25C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V

1000

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000

rth(t) - Transient Thermal Resistance - C/W

ID - Drain Current - A

1000

Rth(ch-A) = 125C/W

100

Channel to Ambient
10
Rth(ch-C) = 3.13C/W
Channel to Case
1

0.1
Single Pulse
0.01
10

100

1m

10 m
100 m
1
PW - Pulse Width - s

Data Sheet D15068EJ2V0DS

10

100

1000

2SK3483
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

FORWARD TRANSFER CHARACTERISTICS

100

60
Pulsed

50

10

ID - Drain Current - A

ID - Drain Current - A

V GS = 10 V

40
4.5 V

30
20
10

T A = 150C
75C
25C
-40C

0.1

0.01
V D S = 10 V
P ulsed

0
0.0

0.001

1.0

2.0

3.0

4.0

5.0

VDS - Drain to Source Voltage - V

GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE

3.5

| yfs | - Forward Transfer Admittance - S

VGS(off) Gate Cut-off Voltage - V

100
V SD = 10 V
I D = 1 mA

3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25

25

50

T A = -40C
25C
75C
150C

10

0.1
V D S = 10 V
P ulsed

0.01
0.01

0.1

80
70
60
V GS = 4.5 V

40
10 V

30
20
10
0
1

10

100

RDS(on) - Drain to Source On-state Resistance - m

Pulsed

0.1

100

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

100

50

10

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE

RESISTANCE vs. DRAIN CURRENT

90

75 100 125 150 175

Tch - Channel Temperature - C

RDS(on) - Drain to Source On-state Resistance - m

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

4.0

ID - Drain Current - A

VGS - Gate to Source Voltage - V

80
Pulsed

70
ID = 28 A
14A

60
50
40
30

5.6 A

20
10
0
0

10

12

14

16

VGS - Gate to Source Voltage - V

Data Sheet D15068EJ2V0DS

18

20

2SK3483
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE

120

10000

100
80
V GS = 4.5 V

60
10 V

40
20

C iss

1000

25

50

10
0.01

75 100 125 150 175

0.1

SWITCHING CHARACTERISTICS

10

100

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

1000

100
V DD = 50 V
V GS = 10 V
RG = 0

100

10
ID = 28 A

90

VDS - Drain to Source Voltage - V

td(on), tr, td(off), tf - Switching Time - ns

VDS - Drain to Source Voltage - V

t d(off)

t d(on)

10
tr
tf

V DD = 80 V
50 V
20 V

80
70

8
V GS

60
50
40

30
20

V DS

10

0.1

10

100

0
0

ID - Drain Current - A

10 15 20 25 30 35 40 45 50

QG - Gate Charge - nC

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

REVERSE RECOVERY TIME vs. DRAIN CURRENT

1000

1000

di/dt = 100 A / s
VGS = 0 V

trr - Reverse Recovery Time - ns

P ulsed

100
V G S = 10 V

10
0 V

0.1

100

10

0.01
0.0

0.5

1.0

1.5

VSD - Source to Drain Voltage - V

0.1

10

100

IF - Drain Current - A

Data Sheet D15068EJ2V0DS

VGS - Gate to Drain Voltage - V

C rss

100

0
-50 -25

C oss

Tch - Channel Temperature - C

ISD - Diode Forward Current - A

VGS = 0 V
f = 1MHz

Pulsed

Ciss, Coss, Crss - Capacitance - pF

RDS(on) - Drain to Source On-state Resistance - m

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

2SK3483
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD

SINGLE AVALANCHE ENERGY

DERATING FACTOR
120

V DD = 50 V
V GS = 20 0 V
R G = 25
Starting T ch = 25C

Energy Derating Factor - %

IAS - Single Avalanche Current - A

1000

100
I AS = 25 A
E AS = 62.5 m J

10

1
0.01

100
80
60
40
20
0

0.1

10

25

50

75

100

125

150

175

Starting Tch - Starting Channel Temperature - C

L - Inductive Load - mH

V DD = 50 V
V GS = 20 0 V
R G = 25
IAS 25 A

Data Sheet D15068EJ2V0DS

2SK3483
PACKAGE DRAWINGS (Unit: mm)

2) TO-252 (MP-3Z)

1.1 0.2
+0.2

0.5 0.1

+0.2

0.5 0.1

0.75

2.3 2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)

1.5 0.1

2.3 0.2

1.0 MIN.
1.8TYP.

0.5 0.1

0.9
0.8
2.3 2.3 MAX. MAX.
0.8
1. Gate
2. Drain
3. Source
4. Fin (Drain)

0.7

0.8 4.3 MAX.

1.1 0.2

13.7 MIN.

7.0 MIN.

5.5 0.2

1.6 0.2

5.5 0.2
10.0 MAX.

6.5 0.2
5.0 0.2

0.5 0.1

+0.2

2.3 0.2

2.0
MIN.

5.0 0.2

1.5 0.1

6.5 0.2

+0.2

1) TO-251 (MP-3)

EQUIVALENT CIRCUIT
Drain

Body
Diode

Gate

Gate
Protection
Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.

Data Sheet D15068EJ2V0DS

2SK3483

The information in this document is current as of August, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1

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