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KEEE 2224
Lecture 7
Metal-Oxide-Semiconductor
Field Effect Transistor
Dr. Ghafour Amouzad Mahdiraji
November 2012
m
EFm
Ec
EFi
Metal
EF
Ec
Ec
EFi
-+
-+
Metal - +Oxide-
Ev
p-type
Ev
EF
EF
Oxide
Ev
p-type
Ev
EFs
Ec
s
+Metal +
+
+
+
+
Oxide
--
Ec
EFi
p-type
Ev
Ev
EF
p-type
+VG
-VG
p-type
VG = 0
p-type
m < s
VG = 0
p-type
++++-
+
+
+
+
-
+
+
+
+
-+
-+
-+
-+
MOSFET Structures
There are four basic MOSFET device types:
n-channel enhancement mode MOSFET
n-channel depletion mode MOSFET
p-channel enhancement mode MOSFET
p-channel depletion mode MOSFET
n-Channel MOSFETs
Enhancement-type MOSFET:
The device is OFF at zero gate voltage.
Depletion-type MOSFET:
The device is ON at zero gate voltage.
The source terminal is the source of carriers that flow through the channel to drain.
In n-channel device, electrons flow from the source to the drain through the channel,
thus, the current directed from drain to source.
p-Channel MOSFET
In p-channel device, holes flow from the source to the drain through the channel,
thus, the current directed from source to drain.
Current-Voltage Relationship
Considering a n-channel enhancement mode MOSFET with a gate-tosource (or gate-to-semiconductor) voltage that is less than the threshold
voltage and with only a very small drain-to-source voltage.
The source and substrate terminals are held at ground potential.
With this bias configuration, there is no electron inversion layer, the
drain-to-substrate pn junction is reverse biased, and the drain current is
zero (regardless of pn junction leakage current).
Current-Voltage Relationship
n-channel enhancement mode MOSFET with an applied gate voltage VGS >
VT.
An electron inversion layer has been created so that when a small drain
voltage is applied, the electrons in the inversion layer will flow from the
source to the positive drain terminal. Thus the current is from drain to source.
I D g dVDS
where gd is the channel conductance in the limit
as VDS 0.
The channel conductance is given by
gd
W
n Q 'n
L
where VDS(sat) is the drain-to-source voltage producing zero inversion charge density
at the drain terminal.
In n-channel depletion mode MOSFET, an induced electron inversion layer exist at zero
gate voltage.
The current-voltage characteristics in depletion-type is exactly the same as the
enhancement-type MOSFET, except that VT is a negative quantity.
In depletion-type, a -tive gate voltage required to reduce the thickness of the n-channel
region and also the drain current.
One basic requirement for this device is that the channel thickness tc must be less than
the maximum induced space charge width in order to be able to turn the device off.
n-channel MOSFET
In the nonsaturation region
p-channel MOSFET
W nCox
2(VGS VT )VDS VDS2
ID
2L
or
I D K n 2(VGS VT )VDS V
2
DS
W pCox
2(VGS VT )VDS VDS2
ID
2L
or
I D (sat )
or
W nCox
(VGS VT ) 2
2L
I D (sat ) K n (VGS VT ) 2
W pCox
I D (sat )
(VGS VT ) 2
2L
or
I D (sat ) K p (VGS VT ) 2
Example
Design the width of a MOSFET such that a specified current is induced for a given
applied bias.
Consider an ideal n-channel MOSFET with parameters L = 1.25 m, n = 650 cm2/Vs, Cox = 6.9 10-8 F/cm2, and VT = 0.65 V. Design the channel width W such that
ID(sat) = 4 mA for VGS = 5 V.
CMOS Inverter
For small values of the input voltage, VIN, the nMOS transistor is switched off,
whereas the pMOS transistor is switched on and connects the output mode to VDD.
For large values of the input voltage, VIN, the pMOS transistor is switched off,
whereas the nMOS transistor is switched on and connects the output mode to GND
= 0V.