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EE 3110 Electronic Devices Laboratory

Spring 2008

EE 3110 Electronic Devices Laboratory Erik Jonsson School of Engineering and Computer Science

Erik Jonsson School of Engi neering and Computer Science Instructor Professor Gil Lee, Office: NSERL 3.410,

Instructor

Professor Gil Lee, Office: NSERL 3.410, Phone: UTD-4753, Email: gslee@utdallas.edu ,Web: www.utdallas.edu/~gslee

TA

Aimee Kondo

(002) Tuesday 2:30 – 5:30 pm Office Hour: Tu 3 - 5 pm, ECSN 2.308, atk031000@utd.edu

Lisha Kachhadia

(001) Wed. 11:30 – 2:30 pm, (004) Thursday 2:30 – 5:30 pm Office Hour: Tu 2 – 4 pm, ECSN 4.222, lnk062000@utd.edu

Kyung Hwan Lee

(501) Wednesday 5:30 pm – 8:30 pm Office Hr: Mo 10 – 12 pm,ECSN2.222, khlee@student.utd.edu

Office hours

Tu, Th 8:30 – 9:45 am or by appointment

Class Homepage

Prerequisite

EE 1102, Co-requisite: EE 3310

Lab Manual

You can download it from the course homepage.

Grading

Lab Reports (no attendance no credit) Pre-lab Reports Instructor Verifications (results, participation, lab attitude) Miscellaneous (workstation cleanliness, etc.)

50 %

20 %

20 %

10 %

Class rules and regulations

1. No eating, drinking, or smoking in the labs.

2. A group of two (or max. three) people will make a team. Lab reports must be

 

prepared individually.

3. There is no credit for any missing lab session.

4. You have to clean up the workstation after you finish your lab session. All equipment

should be placed just as before your use. All parts should be in as original shape (Make sure you straighten up all the wires and legs of parts using pliers so that next group of students won’t have problem with parts.) as possible and placed in the right place.

5.

There will be a peer-review process at the end of the semester, so that each student

can evaluate his/her team members. Peer evaluation will affect the final grading.

Catalog

EE 3110 Electronic Devices Laboratory (1 semester hour) Laboratory to accompany EE 3310. Experimental determination and illustration of properties of carriers in semiconductors including carrier drift, photoconductivity, carrier diffusion; p-n junctions including forward and reverse bias effects, transient effects, photodiodes, and light emitting diodes; bipolar transistors including the Ebers-Moll model and secondary effects; field effect transistors including biasing effects, MOS capacitance and threshold voltage. Prerequisite: EE 1102. Corequisite: EE 3310. (0-1) S

descriptions

Topics

Lab equipment tutorial

Introduction to LabView

Conductivity and the Hall effect in silicon

Silicon diode characteristics

Small signal models of pn junction diodes

Transient signals of pn junction diodes

Low frequency characteristics of JFETs

MOSFETs

MOSFET amplifiers

Class dates

Nine weeks from the week of January 28.