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PROJECT IN PHYSICS
STUDY AND WORKING
OF C.E AMPLIFIER
PROPOSED BY
BY
MR. EDWIN T.J
MRS. SARITA ANIL
(LECTURER)
SUBMITTED
ANKIT VERMA
XII
REG. NO:
AN
INVESTIGATORY
PROJECT
IN
PHYSICS
CERTIFICATE
THIS IS TO CERTIFY THAT INVESTIGATORY
PROJECT ENTITLED
C. E. AMPLIFIER
IS AN ORIGINAL WORK DONE BY
ANKIT VERMA
DURING
2005-06 UNDER MY SUPERVISION & GUIDANCE
Mr. Edwin T. J.
Place:
Date:
DECLARATION
I here by declare that the project entitled
C.E. AMPLIFIER
is an original work done by me during the year 2005-06
under the guidance and supervision of
Mr. Edwin.T.C and Mrs. Sarita Anil.
Anil
ANKIT VERMA
ACKNOWLEGEMENT
I ANKIT VERMA of standard XII of Science Stream, ST.
MARYS INTER COLLEGE ETAWAH is genuinely thankful to my
teacher MR. EDWIN T.C AND SARITA ANIL for their help and able
guidance which I received for the completion of this project.
C.E.AMPLIFIER
I am also thankful to the principal, my co-student and parents
who have always given me their support which was of immense help
towards the completion of this project.
INTRORDUCTION:
The common emitter amplifier is the device which is
used to amplify voltage signal. This type of amplifier is said
to be common emitter amplifier as it has got common emitter
for both input as well as output signals. This type of
amplification is widely use in wide range in he field of
electronics.
AIM:
To construct and study the working of the common
emitter amplifier.
MATARIALS REQUIRED:
For the construction of C.E.AMPLIFIER an npn
transistor of value B.C.547 is used .Three capacitor of value
0.01F, 010F and 10F are required. Four resistance of
value 6.8k, 4.8k, 1.2k and 1.2k are required.
CONSTRUCTION DIAGRAM:
CIRCUIT DETAILS:
1. NPN TRANSISTOR :
A transistor is a device used for amplifying the
signals. A transistor can be produced by adding another
junction to the PN Junction diode. Based upon the junction
added to the PN Diode the transistor are broadly divided
in to two types.
i) NPN Transistor
ii) PNP Transistor
The NPN Transistor is the produced by adding an N
Junction to a PN Junction Diode
The PNP Transistor is the produced by adding a P
Junction to a PN Junction Diode
Normally , N-P-N Transistor are used as the common emitter
amplifier in the circuit in which either of two N- type
semiconductor can act as emitter or collector respectively and
P-type semiconductor act as base.
n-p-n
Ic
Ib
+
Ie = Ib + Ic
Ie = Ib+Ic
PRINCIPLE:
To understand the principle of capacitor consider an isolated
metal plate A. Suppose it is given positive charge till its
potential becomes minimum. The metal plate will not hold
any more charge over it. If charge is given to the metal plate
A it will leak to surroundings. Now place another metallic
plate B while positive charge on its further face. The induced
negative charge on B is near to the metal plate A then the
induced positive charge on B, therefore, on the whole
potential of the metal plate A is lowered of the metallic plate.
Again the some small amount of more charge has to be given.
It indicates the capacitance of a conductor increase by a small
amount when conductor increase by a small amount when
another is placed near it. Now connect the metal plate B to
the earth. The induced positive charge on B will immediately
SEMICONDUCTOR
Semi-conductors are crystalline solids whose electrical
conductivity lies between that of metallic conductor &
insulator. Charge carriers in a semi conductor are free
electrons & holes. The semi conductor are of two types.
E
XTRINSIC SEMI CONDUCTOR
The semiconductor becomes conductors by doping are said to
be extrinsic semi conductors. The extrinsic semi conductors
are of two types:
1. N-type semi conductors
2. P-type semi conductor
P-Type Semi-Conductors
Doping a pure semi-conductor with trivalent impurity atoms
such as Bismuth, aluminium, indium etc., yield P-type semiconductors. Holes are majority charge carriers & free
electrons are minority charge carriers.
P-N-junction
DEPLETION REGION:
The region in which free charge carriers are not available is
called a depletion regions.
There are 2 methods of biasing the P-N junction.
a) Forward biasing:
When the positive terminal is connected to p-type semiconductor and negative terminal to the n-type semi-conductor
of the P-N junction.
b) Reserve biasing:
In reverse biasing the positive terminal of the battery is
connected to N side & negative terminal top side of the P-N
junction.
Input
Output
1b
n-p-n
1e
Veb
vce
DEPLETION REGION :
The region in which free charge carriers are not available is
called is called a depletion region.
There are two methods of liasing the P-N junction.
A) Forward Biasing: When the positive terminal is
connected top type semi-conductor and negative
terminal to the n-type semi-conductor of the P-N
junction.
B) Reversed Biasing: In reverse biasing the positive
terminal of the battery is connected to N side and
negative terminal top side of the P-N junction.
(a)
(b)
D.C Current gain: It is defined as the ratio of
collector current to the base current. It is denoted
by
= Ic/Ib.
= Ic/Vi/
= Ic/Ib * Ib/VI
= a.c * RI
= -1
= Ic / I6
= Ic / Ie Ic(Ic =I6)
Dividing both Numerator and Denominator by Ie
= Ic/IE
Ie/Ie-Ic/Ic
[ = Ic/Ie]
PRECAUTION:i)
ii)
BIBLIOGRAPHY:
1. Lali manual of physics
2. Modern ABC of Physics
3. Comprehensive Physics
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