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AOD4186

N-Channel Enhancement Mode Field Effect Transistor

 

General Description

 

Features

The AOD4186 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for low voltage inverter applications.

V DS (V) =40V

I D = 35A

(V GS = 10V)

R DS(ON) < 15m

(V GS = 10V)

 

R DS(ON) < 19m

(V GS = 4.5V)

- RoHS Compliant

   

- Halogen Free

   

100% UIS Tested! 100% R g Tested!

 

TO-252

D-PAK Bottom View Top View D G S G S
D-PAK
Bottom View
Top View
D
G
S
G
S
 
D G S
D
G
S

Absolute Maximum Ratings T A =25°C unless otherwise noted

 

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V DS

40

V

Gate-Source Voltage

V GS

±20

V

Continuous Drain

T

C =25°C

I

 

35

 

Current G

T

C =100°C

D

27

A

Pulsed Drain Current C

 

I DM

70

Continuous Drain

T

A =25°C

I DSM

10

A

Current

T

A =70°C

8

Avalanche Current C

I AR

24

A

Repetitive avalanche energy L=0.1mH C

E AR

29

mJ

 

T

C =25°C

P D

50

W

Power Dissipation B

T

C =100°C

25

 

T

A =25°C

P DSM

2.5

W

Power Dissipation A

T

A =70°C

1.6

Junction and Storage Temperature Range

T J , T STG

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

Maximum Junction-to-Ambient A

t

10s

R

 

16.7

25

°C/W

Maximum Junction-to-Ambient A D

Steady-State

θJA

40

50

°C/W

Maximum Junction-to-Case

Steady-State

R

θJC

2.5

3

°C/W

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AOD4186

Electrical Characteristics (T J =25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

STATIC PARAMETERS

 

BV DSS

Drain-Source Breakdown Voltage

I D =250µA, V GS =0V

40

   

V

I

Zero Gate Voltage Drain Current

V DS =40V, V GS =0V

   

1

µA

 

DSS

 

T

J =55°C

   

5

I

GSS

Gate-Body leakage current

V DS =0V, V GS = ±20V

   

100

nA

V

GS(th)

Gate Threshold Voltage

V DS =V GS I D =250µA

1.7

2.2

2.7

V

I

D(ON)

On state drain current

V GS =10V, V DS =5V

100

   

A

   

V GS =10V, I D =20A

 

12.4

15

 

R

DS(ON)

Static Drain-Source On-Resistance

 

T

J =125°C

 

20

24

m

 

V GS =4.5V, I D =15A

 

14.5

19

m

g

FS

Forward Transconductance

V DS =5V, I D =20A

 

60

 

S

V

SD

Diode Forward Voltage

I S =1A,V GS =0V

 

0.75

1

V

I

S

Maximum Body-Diode Continuous Current

     

60

A

DYNAMIC PARAMETERS

 

C

iss

Input Capacitance

 

780

980

1200

pF

C

oss

Output Capacitance

V GS =0V, V DS =20V, f=1MHz

90

130

170

pF

C

rss

Reverse Transfer Capacitance

48

80

110

pF

R

g

Gate resistance

V GS =0V, V DS =0V, f=1MHz

 

1.9

3.8

5.7

SWITCHING PARAMETERS

 

Q

g (10V)

Total Gate Charge

 

13.5

17

20

nC

Q

g (4.5V)

Total Gate Charge

V GS =10V, V DS =20V, I D =20A

7

9

11

nC

Q

gs

Gate Source Charge

2

2.5

3

nC

Q

gd

Gate Drain Charge

 

2.7

4.5

6.3

nC

t

D(on)

Turn-On DelayTime

   

6

 

ns

t

r

Turn-On Rise Time

V GS =10V, V DS =20V, R L =1.0, R GEN =3

 

12

 

ns

t

D(off)

Turn-Off DelayTime

 

26

 

ns

t

f

Turn-Off Fall Time

   

7

 

ns

t

rr

Body Diode Reverse Recovery Time

I F =20A, dI/dt=500A/µs

 

9

12

15

ns

Q

rr

Body Diode Reverse Recovery Charge

I F =20A, dI/dt=500A/µs

 

24

31

38

nC

A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power

dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation P D is based on T J(MAX) =175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation

limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =175°C. Ratings are based on low frequency and duty cycles to keep initial T J

=25°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of T J(MAX) =175°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is limited by bond-wires.

H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.

Rev 1 :

May-09

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AOD4186

AOD4186

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 6V 10V 4.5V 60 4V 40 20 V GS =3.5V 0 I D (A)
80
6V
10V
4.5V
60
4V
40
20
V
GS =3.5V
0
I D (A)
80 V DS =5V 60 40 125°C 20 25°C 0 I D (A)
80
V
DS =5V
60
40
125°C
20
25°C
0
I D (A)

012345 0123456

V DS (Volts) Fig 1: On-Region Characteristics (Note E)

20 18 V GS =4.5V 16 14 V GS =10V 12 10 8 0 5
20
18
V
GS =4.5V
16
14
V
GS =10V
12
10
8
0
5
10
15
20
25
30
)Ω
R DS(ON) (m

I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)

V GS (Volts)

Figure 2: Transfer Characteristics (Note E)

2 1.8 V GS =10V I D =20A 1.6 17 1.4 5 2 1.2 10
2
1.8
V
GS =10V
I
D =20A
1.6
17
1.4
5
2
1.2
10
V
GS =4.5V
1
I
D =15A
0.8
0
25
50
75
100
125
150
175
200
Temperature (°C)
0
Normalized On-Resistance

Figure 4: On-Resistance vs. Junction Temperature

(Note E)

18

40 I D =20A 35 30 25 125°C 20 25°C 15 10 2 4 6
40
I
D =20A
35
30
25
125°C
20
25°C
15
10
2
4
6
8
10
)Ω
R DS(ON) (m
I S (A)

V GS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)

1.0E+02

1.0E+01

40

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

1.0E-05

125°C 25°C 0.0 0.2 0.4 0.6 0.8 1.0 1.2
125°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2

V SD (Volts) Figure 6: Body-Diode Characteristics (Note E)

Alpha & Omega Semiconductor, Ltd.

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AOD4186

AOD4186

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 V DS =20V 8 I D =20A 6 4 2 0 0 5 10
10
V
DS =20V
8
I
D =20A
6
4
2
0
0
5
10
15
20
V GS (Volts)
1500 1200 C iss 900 600 C oss 300 C rss 0 0 10 20
1500
1200
C
iss
900
600
C
oss
300
C
rss
0
0
10
20
30
40
Capacitance (pF)

Q g (nC) Figure 7: Gate-Charge Characteristics

100.0 10µs R 10µs DS(ON) limited 10.0 1 00µs DC 1ms 1.0 10ms T J(Max)
100.0
10µs
R
10µs
DS(ON)
limited
10.0
1
00µs
DC
1ms
1.0
10ms
T J(Max) =175°C
T C =25°C
0.1
I D (Amps)
Power (W)

200

160

120

80

40

0

V DS (Volts) Figure 8: Capacitance Characteristics 17 T J(Max) =175°C 5 T C =25°C
V DS (Volts)
Figure 8: Capacitance Characteristics
17
T
J(Max) =175°C
5
T
C =25°C
2
10
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 V DS (Volts) 0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
V DS (Volts)
0
Pulse Width (s)
18
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
D=T on /T
In
descending
order
D=0.5, 0.3,
0.1, 0.05, 0.02, 0.01, single
pulse
T
J,PK =T C +P DM .Z θJC .R θJC
R
θJC =3°C/W
40
1
P
0.1
D
Single
Pulse
T on
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Normalized Transient
Z JCθ
Thermal Resistance

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

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AOD4186

AOD4186

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 T A =25°C T A =100°C T A =150°C T A =125°C 10 0.000001
100
T
A =25°C
T
A =100°C
T
A =150°C
T
A =125°C
10
0.000001
0.00001
0.0001
0.001
I AR (A) Peak Avalanche Current

Time in avalanche, t A (s)

Figure 12: Single Pulse Avalanche capability (Note

C)

60 50 40 30 20 10 0 Current rating I D (A)
60
50
40
30
20
10
0
Current rating I D (A)
60 50 40 30 20 10 0 0 25 50 75 100 125 150 175
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
Power Dissipation (W)

T CASE (°C) Figure 13: Power De-rating (Note F)

10000 T A =25°C 1000 17 5 100 2 10 10 1 Power (W)
10000
T
A =25°C
1000
17
5
100
2
10
10
1
Power (W)
0 25 50 75 100 125 150 175 0.00001 0.001 0.1 10 0 1000 T
0
25
50
75
100
125
150
175
0.00001
0.001
0.1
10
0
1000
T CASE (°C)
Figure 14: Current De-rating (Note F)
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=T on /T
In descending
order
D=0.5, 0.3,
0.1,
0.05, 0.02,
0.01, single pulse
T
J,PK =T A +P DM .Z θJA .R θJA
1
R
JA =50°C/W
40
θ
0.1
Single Pulse
P
D
0.01
T
on
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Normalized Transient
Z JAθ
Thermal Resistance

Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Alpha & Omega Semiconductor, Ltd.

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AOD4186

Gate Charge Test Circuit & Waveform

+ VDC + - VDC - Vgs DUT Ig
+
VDC
+
-
VDC
-
Vgs
DUT
Ig

Vds

Vgs Qg 10V Qgs Qgd
Vgs
Qg
10V
Qgs
Qgd

Charge

Resistive Switching Test Circuit & Waveforms

RL Vds Vds 90% + DUT Vdd Vgs VDC Rg - 10% Vgs Vgs t
RL
Vds
Vds
90%
+
DUT
Vdd
Vgs
VDC
Rg
-
10%
Vgs
Vgs
t r
t d(on)
t f
t d(off)
t on
t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L Vds Id + Vgs Vgs VDC Rg - DUT DUT L Isd + Vdd
L
Vds
Id
+
Vgs
Vgs
VDC
Rg
-
DUT
DUT
L
Isd
+
Vdd
Vgs
VDC
-
Ig
2 E = 1/2 LI AR AR Vds Vdd I Id Vgs
2
E
= 1/2 LI
AR
AR
Vds
Vdd
I
Id
Vgs

AR

BV DSS

Vgs

Diode Recovery Test Circuit & Waveforms

= - Idt Q rr Vgs t rr Isd I F dI/dt I RM Vds
= -
Idt
Q rr
Vgs
t rr
Isd
I F
dI/dt
I RM
Vds

Vds +

Vds -

Vdd

Alpha & Omega Semiconductor, Ltd.

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