Jan 2003

AO4422
N-Channel Enhancement Mode Field Effect Transistor
General Description

Features

The AO4422 uses advanced trench technology to

provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance.

VDS (V) = 30V

ID = 11A
RDS(ON) < 15m: (VGS = 10V)
RDS(ON) < 24m: (VGS = 4.5V)

D
D
D
D
D

S
S
S
G

G
S

SOIC-8

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage

Pulsed Drain Current

ID
IDM

TA=70C
B

TA=25C
Power Dissipation

Junction and Storage Temperature Range

Alpha & Omega Semiconductor, Ltd.

20

50
3

2.1

TJ, TSTG

-55 to 150

Symbol
t 10s
Steady-State
Steady-State

9.3

PD

TA=70C

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C

Units
V

11

TA=25C

Continuous Drain
Current A

Maximum
30

RTJA
RTJL

Typ
31
59
16

Max
40
75
24

Units
C/W
C/W
C/W

AO4422

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage

IGSS

Gate-Body leakage current

VDS=0V, VGS= 20V

VGS(th)

Gate Threshold Voltage

On state drain current

VDS=VGS ID=250PA
VGS=4.5V, VDS=5V

1
40

VGS=10V, ID=11A
TJ=125C
VGS=4.5V, ID=10A
gFS
VSD
IS

Forward Transconductance

VDS=5V, ID=11A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
tD(on)

Gate Source Charge

Gate Drain Charge
Turn-On DelayTime

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime
Turn-Off Fall Time

Qgd

tf
trr
Qrr

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

VGS=10V, VDS=15V, ID=11A

VGS=10V, VDS=15V, RL=1.35:,

RGEN=3:

IF=11A, dI/dt=100A/Ps
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=11A, dI/dt=100A/Ps
2

Units
V

1
5

PA

100

nA

1.8

V
A

12.6
16.8
19.6

15
21
24

TJ=55C

Static Drain-Source On-Resistance

Max

30

ID=250PA, VGS=0V

Zero Gate Voltage Drain Current

RDS(ON)

Typ

VDS=24V, VGS=0V

IDSS

ID(ON)

Min

Conditions

25
0.75

m:
m:
S

4.3

1040

pF

180

pF

110

pF

0.7

19.8

nC

9.8

nC

2.5

nC

3.5

nC

4.5

ns

3.9

ns

17.4

ns

3.2
17.5

ns

7.6

ns
nC

A: The value of R TJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R TJA is the sum of the thermal impedence from junction to lead RTJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 Ps pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA
curve provides a single pulse rating.

Alpha & Omega Semiconductor, Ltd.

AO4422

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30

20

4V
10V

25
20

3.5V
12
ID(A)

ID (A)

VDS=5V

16

4.5V

15

125C
8

10

VGS=3V

25C
4

5
0

0
0

1.5

VDS (Volts)
Fig 1: On-Region Characteristics

3.5

Normalized On-Resistance

1.6

22
VGS=4.5V
20
RDS(ON) (m:)

VGS(Volts)
Figure 2: Transfer Characteristics

24

18
16
14

VGS=10V

12
10

VGS=10V
ID=10A
1.4
VGS=4.5V
1.2

0.8
0

10

15

20

ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage

25

50

75

100

125

150

175

Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature

1.0E+01

60

1.0E+00

50
ID=10A

1.0E-01

40

IS (A)

RDS(ON) (m:)

2.5

125C
1.0E-02
25C

30
1.0E-03

125C
20

1.0E-04

25C

1.0E-05

10
2

10

VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

0.0

0.2

0.4

0.6

0.8

VSD (Volts)
Figure 6: Body-Diode Characteristics

1.0

AO4422

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1500

10
VDS=15V
ID=11A

1250
Capacitance (pF)

VGS (Volts)

8
6
4
2

Ciss
1000
750
500

Coss

250

Crss

0
0

12

16

20

Qg (nC)
Figure 7: Gate-Charge Characteristics

20

25

30

50
RDS(ON)
limited

100Ps

10ms
0.1s
1s

1.0
TJ(Max)=150C
TA=25C

DC
1

10

100

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

D=Ton/T
TJ,PK=TA+PDM.ZTJA.RTJA
RTJA=40C/W

20

0
0.001

VDS (Volts)

10

30

10

10s

0.1
0.1

TJ(Max)=150C
TA=25C

40

10Ps

1ms

10.0

Power (W)

ID (Amps)

15

VDS (Volts)
Figure 8: Capacitance Characteristics

100.0

ZTJA Normalized Transient

Thermal Resistance

10

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

PD

0.1

Ton
Single Pulse
0.01
0.00001

0.0001

0.001

0.01

0.1

T
10

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

100

1000