Model Question Paper 2014,

ECE 101, Electron Devices & Circuits

Max Marks: 100 Duration: 180 min.
Answer all questions to the point. Missing data may be suitably assumed with justification.

1. i) Expand and define PIV. [2
ii) Sketch a Full Wave Rectifier. [2
iii) A FWR circuit with a 1 k load operates from a 230 V, 50 Hz supply thru a
10-to-1 centre-tapped transformer. The Si diodes have V
D
= 0.7 V. What is
the peak voltage of the rectified output? What fraction of a cycle each diode
conducts? What are the average output voltage and the average current in
the load? [6
2. The parameters of the transistor in the circuit are = 150, V
A
= . i) Design
a bias stable circuit with its Q-point in the centre of the load line. ii) Find its
small signal voltage gain G
v
. [8

3. Two identical diodes with are connected back to back and a 15 V the
applied across them. The current I
o
flows thru the diodes. i) Show that
e
(V
1
/nV
T
)
+ e
(V
2
/nV
T
)
= 2, where V
1
and V
2
are voltage drops across the
diodes. ii) If, I
o
= 0.1 A and V
T
= 25 mV, the emission coefficient n =
2, calculate the current in the circuit and the voltage across each
diode.[8

4. Photodiode vs LED - Compare in terms of their principles and
applications? [6
5. What is Early Effect? What phenomenon causes it? Sketch the CE
output characteristics and indicate Early voltage. [8

6. Compare and contrast the three configurations of a BJT amplifier in
terms of current and voltage gains and input and output
impedances.[6
7. Sketch a CB amplifier circuit and its ac equivalent circuit. Develop
expressions for A
v
, G
v
, R
in
and R
out
.[10
8. In the circuit shown voltage at the emitter was -0.7 V. If = 50, find
I
E
, I
B
, and I
C
and V
C
. [10

9. A CC amplifier is used to connect a source with R
sig
= 10 k to a load
R
L
= 1.0 k. The transistor is biased at I = 5 mA and utilizes
resistance R
B
= 40 k and has = 100 and V
A
= 100 V. Find R
in
, R
o
,
A
v
, A
i
. [10
10. List the breakdown mechanisms in a MOSFET and explain how it is
protected against static voltage. [4
11. The FET amplifier in figure has V
t
= 2.0 V, k
n
(W/L) = 1 mA/V
2
, V
GS
=
4 V, V
DD
= 10 V and R
D
= 3.6 k. Find I
D
and V
D
. Evaluate g
m
at the
bias point and the voltage gain. [10

12. Depict a common Source Amplifier. Develop its small signal equivalent
circuit. Derive expressions for A
v
, G
v
, R
in
and R
out
. [10
13. Design the circuit shown to obtain an I
D
of 80 A, given V
t
= 0.6 V,

n
C
ox
= 200 A/V
2
, L = 0.8 m and W = 4 m. Assume = 0. Sketch
its small signal equivalent circuit. [10



14. The CS amplifier shown has V
t
= 1.0 V, k
n
(W/L) = 2 mA/V
2
. Find V
GS
and I
D

and V
D
. and g
m
, r
o
for V
A
= 100 V. Draw its small signal equivalent circuit. [10