Question 1

(a) If the collector capacitance of a given BJT is 3pF when the

applied reverse bias is zero, what will be its value when
the applied reverse bias is 6V? Assume Φ = -0.7V

Solution
Cc = const. X (-Φ – Vbc)-1/3
Cc = 3pF when Vbc = 0, then
3pF = const. X (0.7)-1/3 or
Const. = 3pF
(0.7)-1/3
Hence when reverse bias is 6V

Cc = 3pF X (0.7 + 6.0)-1/3

(0.7)-1/3
Cc = 1.41pF
Question 2

What do you understand by the term ‘Early Effect?’

Solution
This the change of collector-base voltage causing the base width
to change. In other words the collector and emitter currents are
not constant as the collector voltage is increased, but they
increase gradually as the base region becomes narrower due to
the increasing reverse collector voltage.
 Question 2

2(a) Find the Z – parameters of the two port circuit below

I1 2Ω 3Ω I2

+ +

V1 V2

1H
- -

V1 = 2I1 + s(I1 + I2)

V1 = (2 + s)I1 + sI2

Z – parameters of the circuit are found to be

Z11 = s+2
Z12 = Z21 = s
Z22 = s+3

_________________________________________________________________
2(b The two port circuit below contains a current – dependant voltage source.
) Find its Z - parameters

I1

2Ω 3Ω

+ +

V1 V2

1H
- -

Solution
Applying KVL around the two loops we get;

V1 = 2I1 – I2 + s(I1 +I2)

V1 = (2 + s)I1 + (s – I)I2

V2 = 3I2 + s(I1 + I2)

V2 = sI1 + (3 + s)I2

Z – parameters of the circuit are found to be

Z11 = s+2
Z12 = s-1
Z21 = s
Z22 = s+3

(c) Discuss Y – Parameters

Solution

The Y- Parameters or Admittance – parameters is the

reciprocal of impedance ‘Z’. These are properties used
in electrical engineering, electronics engineering,
and communication systems engineering to describe the
electrical behavior of linear electrical networks when
undergoing various steady state stimuli by small signals. In
other words this may be considered as a measure of the
ease with which a circuit can conduct alternating current, eg
a circuit with higher value of admittance will have a higher
value of current.
The unit of admittance is Siemens and its symbol is S.
Question 3
Discuss the structure and operation of an NPN BJT. Compare
with a PNP BJT

NPN BJT
A bipolar (junction) transistor (BJT) is a type of
transistor. It is a three-terminal electronic device constructed
of doped semiconductor material and may be used in
amplifying or switching applications. Bipolar transistors are
so named because their operation involves both electrons
and holes. That is, charge flow is due to bidirectional
diffusion of charge carriers across a junction between two
regions of different charge concentrations

Simplified cross section of a NPN bipolar junction transistor

Symbol for NPN BJT

NPN is one of the two types of bipolar transistors, in which

the letters "N" and "P" refer to the majority charge carriers
inside the different regions of the transistor. Most bipolar
transistors used today are NPN, because electron mobility is
higher than hole mobility in semiconductors, allowing
greater currents and faster operation.
NPN transistors consist of a layer of P-doped semiconductor
(the "base") between two N-doped layers. A small current
entering the base in common-emitter mode is amplified in
the collector output. In other terms, an NPN transistor is "on"
when its base is pulled high relative to the emitter.
The arrow in the NPN transistor symbol is on the emitter leg
and points in the direction of the conventional current flow
when the device is in forward active mode.
One mnemonic device for identifying the symbol for the NPN
transistor is "not pointing in."[

Comparison between NPN and PNP

(a) NPN have two N type material and single P-type sandwitch
between the two N-type. Reverse is the Case in PNP.
(b)An NPN transistor is always drawn with the arrow pointing
outwards whilst the PNP transistor always has the arrow
pointing inwards.
(c) For the NPN transistor, the base current flows into the
transistor but for the PNP transistor, the base current
flows out the transistor
 (d)NPN transistor has a higher frequency response than does
the PNP because electron flow is faster than hole flow
(e) In NPN the n-type collector is heavily doped while p-type
base is lightly doped.
in PNP the p-type collector is heavily doped and n-type
base is lightly doped.
(f) NPN needs positive dc power supply connected to
collector but PNP needs Negative one connected to
Emitter

Question 4

(i)

Zi = βre
Zo = Rcllro
(ii)

Zi = RB//βre
Aprox. = βre

Zo = Rcllro
Aprox. = Rc
Av = - (Rcllro)
Re
Aprox. = - Rc
Re

Ai = βRBro
(ro+Rc)+(RB+βre)
Aprox. = β

(iii)
 Zi = re
1 + Rc
β + RF

Zo approx. = RcllRF

AV approx. = - Rc
re

Ai = βRF
RF + βRc

Ai approx. = RF
Rc

(iv)
Zi = R1llR2llβre

Zo = Rcllro
Ai approx. = Rc

Av = - Rcllro
re

Ai = β(R1llR2)ro
(ro+Rc)(R1llR2 +βre)

= β(R1llR2)
R1llR2 + βre