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Jagadesh Kumar and Vinod Parihar, "Enhanced Current Gain in SiC Power BJTs using
a novel Surface Accumulation Layer Transistor (SALTran) Concept," Microelectronic
Engineering, Vol.81, pp.90-95, July 2005
Abstract: In this paper, we demonstrate that the current gain of SiC power bipolar transistors
can be improved by as large as 100 % by using a novel Surface Accumulation Layer Transistor
(SALTran) concept in which a reflecting boundary in the emitter reduces the base current. The
reasons for the improved current gain are explained based on simulation results.
Key words: Semiconductor Devices, Current gain, Bipolar Transistors, Silicon Carbide.
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1. Introduction
Silicon Carbide (SiC) has been recognized as the choice for high voltage, high temperature,
high power applications because of its large bandgap and high critical electric field [1-3]. SiC
bipolar junction transistors [4] have been demonstrated with high blocking voltage and high on
currents taking the full advantage of the material properties of SiC. Current gain is a key
parameter for the power BJTs as it decides the driving loss of the transistor. But the power SiC
BJTs reported in literature exhibit a low current gain usually in the range of 10-15. This is
mainly because of the poor carrier lifetimes in SiC material. Both heterojunction bipolar
transistors(HBTs) and polysilicon emitter transistors have been used for realizing high current
gains in silicon BJTs.. Another method used to improve the current gain of silicon bipolar
transistors is the application of high-low emitter junction in which a lightly doped n-region is
introduced between the n+-region and the p-base region [5]. However, the above methods are
not technologically well suited for increasing the current gain in SiC BJTs. Recently, it has
been shown that by using the Surface Accumulation Layer Transistor(or SALTran) concept in
which a reflecting boundary for the minority carriers is created in the emitter region, the base
current of a silicon BJT can be significantly reduced resulting in a large current gain
enhancement[6]. It would be very beneficial if the current gain of a SiC BJT can be enhanced
Since the properties of SiC are different from that of silicon, we do not yet know how the
SALTran concept works for the SiC bipolar transistors. The main objective of this work is,
therefore, to implement the SALTran concept on power SiC BJT using a two dimensional
device simulator ATLAS [7] and examine if the current gain of the SiC BJT can be improved.
Based on our simulation results we demonstrate that for identical minority carrier lifetime, the
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performance of the power SiC SALTran is better than the conventional power SiC BJT in terms
of high current gain mainly because of the improved emitter injection efficiency due to the
reflecting boundary at the emitter contact. Also we observe that due to the low emitter doping
required in the case of the SALTran, the complexity involved in high doping epitaxial growth
In order to validate our simulation results we have first implemented the power SiC BJT
already reported in literature [8] in ATLAS with the following parameters. The collector drift-
region thickness is 20 μm with a uniform doping of 2.5x1015/cm3 and the n+collector doping is
while the emitter doping is 1x1019/cm3 with thickness 0.75 μm. The JTE doping is taken as
2.5x1017/cm3. The cell pitch for the structure is taken to be 14 μm. For the above dimensions,
we have adjusted the recombination parameters in our simulation so that our simulated peak
current gain matches with the reported experimental current gain of the published structure[8].
3 Design methodology
Fig. 1 shows the cross-sectional view of the optimized power SiC BJT and power SiC
SALTran. To apply the SALTran concept to the power SiC BJT reported in [8], we have
optimized the thickness of the emitter and base thickness to be 0.3 μm and 0.4 μm respectively.
It may be noted that the base thickness is reduced compared to the original structure in [8] to
make sure that the base region recombination does not overshadow the gain enhancement
provided by the SALTran concept. All the device parameters of the conventional SiC power
BJT and the power SALTran are kept the same except that in the case of the power SALTran,
we have changed the emitter doping to 1x1014 /cm3 and chosen an emitter metal with very low
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workfunction (3.35eV) e.g magnesium, to obtain surface accumulation near the emitter contact.
In the following sections we show the comparison of the power SiC SALTran with the power
SiC BJT which differ only in their emitter doping and emitter contact properties.
4 Simulation results
We have taken the value of electron affinity and band gap for the 4H-SiC to be 3.9 eV and 3.2
characteristics of the proposed structure. Drift-diffusion calculations are carried out using
appropriate physical models given in ATLAS for 4H SiC. The field dependent mobility [9] and
the Arora mobility [10] models are used and the bandgap narrowing effect is taken into
account. For recombination we have incorporated SRH and Auger recombination mechanism.
SRH minority carrier lifetime coefficient for electrons and holes are tuned to be 30 nS and 6 nS
respectively, while the SRH equilibrium concentration is 5x1016 cm-3 for both electrons and
We have first simulated the band diagrams of both the structures to examine if surface
accumulation takes place. Fig. 2 shows the band diagram in the emitter-base region for both the
SiC SALTran and the SiC BJT structures. Fig. 2(a) is for zero emitter-base bias and Fig. 2(b)
is under normal biasing conditions corresponding to the peak current gain. We observe that at
the metal-semiconductor interface, with or without the bias, there is a bending in the
conduction band indicating that accumulation of electrons does take place. The accumulated
electron profile near the emitter contact is shown in Fig. 3 and also the minority carrier profile
is shown in Fig. 4. The presence of accumulated electrons results in a high electric field near
the emitter contact as shown in Fig. 5 which causes the reflection of holes coming from the
base. Because of the presence of this reflecting boundary in the emitter to the holes coming
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from the base, the hole gradient in the emitter decreases reducing the base current. This is a
clear indication that the SALTran effect works not only for lateral high speed bipolar
transistors[6] but is also effective for vertical power bipolar transistors. However, when
applying the SALTran concept to the power transistors, care should be taken to see that the
base width is of some reasonable value so that the base recombination does not overshadow the
Fig. 6 shows the output characteristics of power SiC SALTran and power SiC BJT. The
comparison shows that the current driving capability of power SiC SALTran is higher as
compared to the power SiC BJT. Our simulations indicate the power SiC SALTran device
shows a high BVceo of around 1700 V. The current gain comparison in Fig. 4.4 shows that
the power SiC SALTran exhibits almost double the current gain of the power SiC BJT. The
Gummel plot in Fig. 7 clearly shows that the high current gain of the power SALTran is due to
the reduced base current. The reduced base current in the case of the power SiC SALTran can
be attributed to the reduction in number of holes reaching the emitter because of the SALTran
effect.
Fig.9 shows the current gain for different temperatures for the power SiC SALTran and
the power SiC BJT. We observe that in both the cases the current gain decreases with
increasing temperature. Further the effect of temperature on the normalized current gain i.e
β(Τ)/β300 is plotted in Fig. 10, where β(Τ) is the peak current gain at a particular temperature
and β300 is the peak current gain at room temperature. Power SiC SALTran shows a higher
negative temperature coefficient for the current gain due to the low emitter doping. The
negative temperature coefficient for the current gain is due to the deep level acceptors in the
base region [11]. At elevated temperatures, the minority carrier lifetime increases, resulting in
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a significant increase in the current gain of the conventional silicon bipolar devices. However,
in SiC npn BJTs, due to deep level of acceptors, holes that were frozen out at room temperature
ionize at elevated temperatures, resulting in higher hole concentrations in the base at high
temperatures. This effect reduces the emitter injection efficiency of the device at elevated
temperatures, which cancels out the increasing minority carrier lifetime in the base region and
keeps the current gain of the SiC npn BJTs almost stable. This negative temperature coefficient
makes this device attractive for paralleling and for preventing thermal runaways [12]. In Fig. 11
we have plotted peak current gain for different temperatures against 1/KBT of the power
SALTran and the power SiC structure. The slope of the natural logarithm of peak current gain
curve for different temperatures gives the activation energy which is nothing but the difference
of the effective bandgap narrowing of the emitter and the base[13]. We see that the activation
energy comes out to be -44.5 meV and -37.5 meV for power SiC SALTran and power SiC BJT
respectively. This shows that in the case power SiC SALTran, the current gain decreases at a
higher rate than the power SiC BJT making the SALTran structure more suitable for high
temperature applications.
5 Conclusions
In this paper, for the first time, we have successfully implemented the SALTran
concept to the power SiC BJT. The high current gain obtained for the proposed structure results
in low driving losses making this device more useful for high voltage applications. Further the
high current gain can be traded off by increasing the base doping to obtain better output
characteristics in terms of increased early voltage. The power SiC SALTran is also more
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References
7
Figure Captions
Fig. 1 Schematic cross section of the Power SiC SALTran and Power SiC BJT
Fig. 2 Band diagram of emitter-base region (a) without bias and (b) with bias
Fig. 3 Electron concentration in the emitter region of power SiC SALTran and power SiC BJT
Fig. 4 Minority carrier profile in the emitter-base region (a) without bias (b) with bias
Fig. 5 Electric field in the emitter region in power SiC SALTran and power SiC BJT
Fig. 6 Output characteristics of the power SiC SALTran and power SiC BJT
Fig. 7 Current gain of power SiC SALTran and power SiC BJT
Fig. 8 Gummel plots of power SiC SALTran and power SiC BJT
Fig. 9 Current gain versus collector current for different temperature for (a) power SiC
Fig. 10 Normalized peak current gain of power SiC SALTran and power SiC BJT
Fig. 11 Peak current gain versus 1/KBT for power SiC SALTran and and power SiC BJT.
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Emitter
N, 0.3 μm
Base
P+ P+
P, 2.5x1017 cm-3, 0.4 μm
P, JTE P, JTE
N+ 4H-SiC Substrate
Collector
Fig.1
9
3 Power SiC SALTran
Power SiC BJT
2
Conduction band
Energy (eV) 1
0
Fermi level
-1
Metal
Valence band
-2
-3
-4 Emitter Base
5
Power SALTran V =2.96 V
4 Power SiC BJT
BE
Hole quassi fermi level
3
2
Energy (eV)
Conduction band
1
0
Electron quassi fermi level
-1
-2 Valence band
Metal
-3
-4 Emitter Base
-5
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Distance from emitter contact (μm)
(b)
Fig. 2
10
1022
1010
0.0 0.1 0.2 0.3
Distance from emitter contact (μ m)
Fig. 3
11
Carrier concentration (/cm 3)
1018
VBE=2.96 V Emitter base junction
1016
1014
1010
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Distance from emitter contact ( μ m)
Fig. 4
12
500
200
100
Fig. 5
13
0.5
Power SiC SALTran
Power SiC BJT
0.4 IB=0.5 μA to 2 μA
Collector current (mA) Step 0.5 μA
0.3
0.2
0.1
0.0
0 20 40 60 80 100
Collector emitter voltage (V)
Fig. 6
14
140 VCE= 10 V
120
Power SiC SALTran
Current gain 100 Power SiC BJT
80
60
40
20
0
-9 -8 -7 -6 -5 -4 -3
10 10 10 10 10 10 10
Collector current (A)
Fig. 7
15
-3
10
Fig. 8
16
140
T= 300 K to 450 K 300 K
120 Step 50 K
100
Current gain
80
60 450 K
40
20
0
-8 -7 -6 -5 -4 -3
10 10 10 10 10 10
Collector current (A) (a)
80
T=300 K to 450 K 300 K
70
Step 50 K
60
Current gain
50
40 450 K
30
20
10
0
-8 -7 -6 -5 -4 -3
10 10 10 10 10 10
Collector current (A)
(b)
Fig. 9
17
Power SiC SALTran
1.0
(β300=140)
Power SiC BJT
β(T)/β300 0.9 (β300=70)
0.8
0.7
0.6
250 300 350 400 450 500
Temperature (K)
Fig. 10
18
ΔEg=-44.5 meV
Fig. 11
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