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UNISONIC TECHNOLOGIES CO.

, LTD
8N65 Power MOSFET
www.unisonic.com.tw 1 of 8
Copyright 2012 Unisonic Technologies Co., Ltd QW-R502-591.C
8A, 650V N-CHANNEL
POWER MOSFET
DESCRI PTI ON
The UTC 8N65 is a high voltage and high current power
MOSFET designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and high
rugged avalanche characteristics. This power MOSFET is usually
used in high speed switching applications at power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* R
DS(ON)
= 1.4@V
GS
= 10 V
* Ultra low gate charge ( typical 28 nC )
* Low reverse transfer capacitance ( C
RSS
= typical 12.0 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL


ORDERI NG I NFORMATI ON
Ordering Number
Package
Pin Assignment
Packing
Lead Free Halogen Free 1 2 3
8N65L-TA3-T 8N65G-TA3-T TO-220 G D S Tube
8N65L-TF1-T 8N65G-TF1-T TO-220F1 G D S Tube
8N65L-TF3-T 8N65G-TF3-T TO-220F G D S Tube
8N65L-T2Q-T 8N65G-T2Q-T TO-262 G D S Tube
Note: Pin Assignment: G: Gate D: Drain S: Source

8N65 Power MOSFET
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ABSOLUTE MAXI MUM RATI NGS (T
C
= 25C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V
DSS
650 V
Gate-Source Voltage V
GSS
30 V
Avalanche Current (Note 2) I
AR
8 A
Drain Current
Continuous I
D
8 A
Pulsed (Note 2) I
DM
32 A
Avalanche Energy
Single Pulsed (Note 3) E
AS
230 mJ
Repetitive (Note 2) E
AR
14.7 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns
Power Dissipation
TO-220/TO-262
P
D

147 W
TO-220F/TO-220F1 48 W
Junction Temperature T
J
+150 C
Operating Temperature T
OPR
-55 ~ +150 C
Storage Temperature T
STG
-55 ~ +150 C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J

3. L = 7.1mH, I
AS
= 8A, V
DD
= 50V, R
G
= 25 , Starting T
J
= 25C
4. I
SD
8A, di/dt 200A/s, V
DD
BV
DSS
, Starting T
J
= 25C
THERMAL DATA
PARAMETER SYMBOL RATING UNIT
Junction to Ambient
JA
62.5 C/W
Junction to Case
TO-220/TO-262

JC

0.85 C/W
TO-220F/TO-220F1 2.6 C/W

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ELECTRI CAL CHARACTERI STI CS (T
C
=25C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
DSS
V
GS
= 0 V, I
D
= 250 A 650 V
Drain-Source Leakage Current I
DSS
V
DS
= 650 V, V
GS
= 0 V 10 A
Gate-Source Leakage Current
Forward
I
GSS

V
GS
= 30 V, V
DS
= 0 V 100 nA
Reverse V
GS
= -30 V, V
DS
= 0 V -100 nA
Breakdown Voltage Temperature Coefficient BV
DSS
/T
J I
D
=250A,Referenced to 25C 0.7 V/C
ON CHARACTERISTICS
Gate Threshold Voltage V
GS(TH)
V
DS
= V
GS
, I
D
= 250 A 2.0 4.0 V
Static Drain-Source On-State Resistance R
DS(ON)
V
GS
= 10 V, I
D
= 4A 1.0 1.4
DYNAMIC CHARACTERISTICS
Input Capacitance C
ISS

V
DS
= 25 V, V
GS
= 0V,
f = 1MHz
965 1255 pF
Output Capacitance C
OSS
105 135 pF
Reverse Transfer Capacitance C
RSS
12 16 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time t
D(ON)

V
DD
= 325V, I
D
=8A,
R
G
= 25
(Note 1, 2)
16.5 45 ns
Turn-On Rise Time t
R
60.5 130 ns
Turn-Off Delay Time t
D(OFF)
81 170 ns
Turn-Off Fall Time t
F
64.5 140 ns
Total Gate Charge Q
G

V
DS
= 520V,I
D
=8A,
V
GS
= 10 V (Note 1, 2)
28 36 nC
Gate-Source Charge Q
GS
4.5 nC
Gate-Drain Charge Q
GD
12 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage V
SD
V
GS
= 0 V, I
S
=8A 1.4 V
Maximum Continuous Drain-Source Diode
Forward Current
I
S
8 A
Maximum Pulsed Drain-Source Diode
Forward Current
I
SM
32 A
Reverse Recovery Time t
RR
V
GS
= 0 V, I
S
=8A,
dI
F
/dt = 100 A/s (Note 2)
365 ns
Reverse Recovery Charge Q
RR
3.4 C
Notes: 1. Pulse Test: Pulse width 300s, Duty cycle2%
2. Essentially independent of operating temperature
8N65 Power MOSFET
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TEST CI RCUI TS AND WAVEFORMS
Same Type
as D.U.T.
L
V
DD
Driver
V
GS
R
G
-
V
DS
D.U.T.
+
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
-
+

Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
D=
V
GS
(Driver)
I
SD
(D.U.T.)
I
FM
, Body Diode Forward Current
di/dt
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Body Diode Forward Voltage Drop
V
DD
10V
V
DS
(D.U.T.)
V
GS
=
P.W.
Period

Peak Diode Recovery dv/dt Waveforms
8N65 Power MOSFET
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TEST CI RCUI TS AND WAVEFORMS (Cont .)
V
GS
D.U.T.
R
G
10V
V
DS
R
L
V
DD
V
DS
90%
10%
V
GS
tD(ON)
tR
t
D(OFF)
tF

Switching Test Circuit Switching Waveforms

10V
Charge
Q
GS
Q
GD
Q
G
V
GS

Gate Charge Test Circuit Gate Charge Waveform
V
DD
t
p
Time
BV
DSS
I
AS
I
D(t)
V
DS(t)

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms
8N65 Power MOSFET
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TYPI CAL CHARACTERI STI CS
10
1
10 0.1 1
Drain-to-SourceVoltage,V
DS
(V)
D
r
a
i
n

C
u
r
r
e
n
t
,

I
D
(
A
)
On-StateCharacteristics
0.1
2
Gate-SourceVoltage,V
GS
(V)
D
r
a
i
n

C
u
r
r
e
n
t
,

I
D
(
A
)
TransferCharacteristics
4 6 8 10
10
1
0.1
5.0V
Notes:
1.250sPulseTest
2. T
C
=25C
VGS
Top:15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
Bottorm:5.0V
100
Notes:
1.V
DS
=40V
2. 250sPulseTest
25C
150C
0
0
D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e
,

R
D
S
(
O
N
)
(
o
h
m
)
DrainCurrent,I
D
(A)
5
1
2
4
5
6
On-ResistanceVariationvs.Drain
CurrentandGateVoltage
3
10 15 20
1
0.1
0.2
Source-DrainVoltage,V
SD
(V)
R
e
v
e
r
s
e
D
r
a
i
n

C
u
r
r
e
n
t
,

I
D
R
(
A
)
BodyDiodeForward Voltagevs.Source
Current
1.8
0.4 0.6 0.8 1.0 1.2 1.6 1.4
10
150C
25C
Notes:
1.V
GS
=0V
2. 250sTest
V
GS
=20V
V
GS
=10V
T
J
=25C
1900
0
0.1
Drain-SourceVoltage,V
DS
(V)
C
a
p
a
c
i
t
a
n
c
e

(
p
F
)
1700
500
1 10
1500
1300
CapacitanceCharacteristics
(Non-Repetitive)
0

G
a
t
e
-
S
o
u
r
c
e

V
o
l
t
a
g
e
,

V
G
S
(
V
)
TotalGateCharge,Q
G
(nC)
5 15 25
8
10
12
10
6
4
2
0
V
DS
=120V
V
DS
=520V
V
DS
=300V
20
GateChargeCharacteristics
700
C
iss
C
oss
C
rss
C
iss=
C
gs
+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
Notes:
1.V
GS
=0V
2. f=1MHz
1100
900
300
100
30
I
D
=7.5A

8N65 Power MOSFET
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TYPI CAL CHARACTERI STI CS(Cont .)
-100
D
r
a
i
n
-
S
o
u
r
c
e

B
r
e
a
k
d
o
w
n

V
o
l
t
a
g
e
,

B
V
D
S
S

(
N
o
r
m
a
l
i
z
e
d
)

Junction Temperature, T
J
(C)
-50 50 200 100 150
1.2
0
1.1
1.0
0.9
0.8
Note:
1. V
GS
=0V
2. I
D
=250A
Breakdown Voltage Variation vs.
Temperature
-100
D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e
,

R
D
S
(
O
N
)

(
N
o
r
m
a
l
i
z
e
d
)

Junction Temperature, T
J
(C)
-50 50
200
100 150
3.0
0
2.0
1.0
0.5
0.0
1.5
2.5
On-Resistance Junction Temperature
Note:
1. V
GS
=10V
2. I
D
=4A
10
1
0.1
Drain-Source Voltage, V
DS
(V)
D
r
a
i
n

C
u
r
r
e
n
t
,

I
D
(
A
)
100 10 1
100s
1000
10ms
DC
Maximum Safe Operating Area

D
r
a
i
n

C
u
r
r
e
n
t
,

I
D
(
A
)
Case Temperature, T
C
(C)
75 100
0
125 50 25
2
4
6
8
10
Maximum Drain Current vs. Case
Temperature
Notes:
1. T
J
=25C
2. T
J
=150C
3. Single Pulse
150
Operation in This Area is Limited by RDS(on)
100
1ms
10s
T
h
e
r
m
a
l

R
e
s
p
o
n
s
e
,

J
C
(
t
)
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pulse Duration, t
1
(sec)
Transient Thermal Response Curve
Notes:
1.
JC
(t) = 0.85C/W Max.
2. Duty Factor, D=t1/t2
3. T
JM
-T
C
=P
DM

JC
(t)
D=0.5
D=0.2
D=0.1
D=0.05
0.02
0.01
Single pulse

8N65 Power MOSFET
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
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