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1

PN Junction
& Schottky
Diode
Cathode Anode
2
Reverse-Bias PN Junction
Charge Density
Electric Field
Potential
2
ln
i
D A
T bi
n
N N
V =
mV
q
kT
V
T
26 =
26 =
q
kT
V
T
mV at 300
o
K
n
i
is the intrinsic carrier concentration approximates 1.5e-10 cm
-3
at 300
o
K
K is Boltzsmann Constant
Reverse-bias
is similar
as 0 bias
condition
Built-In Potential (0 Bias)
3
* Built-In Potential oppose the diffusion of mobile holes and electrons
across the junction.
Demand overall charge neutrality.
*

2
2
x
V
* Apply Poissons equation to solve for V
4
* Maximum field increase as the doping density increase.
* Increase reverse bias voltage will increase maximum field.
* Junction breakdowns when bias exceeds V
BREAKDOWN
voltage
I
V
BREAKDOWN
V
$ Higher doing will cause
higher or lower
V
BREAKDOWN
?
5
2
1
1
) 0 (
) (
|
|
.
|

\
|

=
=

=
bi
j
V
V C
V
Q
V C
3
1
1
) 0 (
) (
|
|
.
|

\
|

=
=

=
bi
j
V
V C
V
Q
V C
Graded doping
Junction Capacitance
for uniform doping in both
p,n region
* Apply
for graded doping in both
p,n region
*
V is the reverse bias voltage
$ Higher doping will cause
higher or lower
capacitance?
** C-V for forward bias?
C-V curve for
uniform doping
6
I-V Characteristics
Forward
Bias
Impedance of diode vary with bias point and RF swing level
(Curve of exponential)
7
Forward Bias
(used to approximate reverse bias too)
) 1 ( =
nkT
qV
S
e I I
ideality factor
reverse saturation current
Boltzmann constant
absolute temperature
bias voltage
:
:
:
:
:
V
T
k
I
n
S
CMOS
PN junction is everywhere
8
Review:
Junction capacitance resulted from reverse bias and vary with
voltage
Breakdown voltage inversely proportional with doping
Diffusion capacitance resulted from forward bias (hard to
measure C-V curve, more later)
One thing not mentioned is the leakage current through the
the surrounding edge of diode structure for both forward
and reverse bias. Its a OMIC phenomena.
Breakdown phenomena is not modeled in:
) 1 ( =
nkT
qV
S
e I I
9
10
V
I
I
KT
q
N

11
N
12
Straight line
in logarithm scale
for large V
|
|
.
|

\
|
=
S
I
I
q
kT
V log
For large V
13
Series Resistance
(parasitic component)
Accounts for
Ohmic drop,
neglected so far
Current (I) appears
in both side of equations
|
|
.
|

\
|
+ =
S
s
I
I
q
kT
IR V log
For large V
14
|
|
.
|

\
|
S
I
I
log
Use here
|
|
.
|

\
|
+ =
S
s
I
I
q
kT
IR V log
For large V
|
|
.
|

\
|
S
I
I
log
If =6, I
S
=1.6e-6 A, and V=0.71V
then what is the value of Rs at 300
o
K?
0.346 OHM
15
Fabricate PN junction diode in CMOS
Substrate usually is grounded
This P layer substrate provides isolation
16
CMOS
NPN structure is vertical instead of horizontal
(meaning of plug)
17
* pn junction is one kind of diode
18
In Practical!
19
Vj can not change abruptly,
need to get rid of minority
carrier
Current Spike
trr is the time required
to neutralize minority
carrier
The mass of
P is more heavier
than N
No trr for
schottky diode
Cd(V) then Cj(V)?
Cj(V) then Cd(V)
! Initial large or small Cd(V)?
$ Initial large or
small Cd(V)?
20
- - -
+ + +
Forward-bias
P
+
- -
- - -
+
+
+ +
P
Reverse-bias
- -
-
+ +
+
Cd(V)
Cj(V)
It takes time
21
Majority electron
+
- -
- - -
+
+
+ +
+
-
V
f
Vr
P
+
- -
- - -
+
+
+ +
P
Instant switched
to reverse bias
Forward bias
Act like voltage source, so
the resultant voltage sorce
is Vf+Vr-(If*Rs)
Majority electron
Generate current spike
22
Switch off
Transient
Vr >> Vf
and
Rs is very small
23
24
25
Schottky Diode
Metal-Semiconductor junction.
Lower forward turn-on voltage.
Steeper I-V curve
Majority-carrier (Electron) device. Not like p-n diode using
minority-carrier charge-storage effects.
Higher cutoff frequency, reproducibility and ease of fabrication.
Exitaxial and ion-implantation.
Rectifying or non-rectifying (ohmic-contact)
No minority
carrier storage!
ID
VD
Schottky
26
Gx : Gx1 // Gx2
27
I-V characteristics
Based on

) 1 ( =
nkT
qV
S
e I I
:
:
:
:
:
:
:
S
x
S
IR
V G
V
T
k
I
n ideality factor
reverse saturation current
Boltzmann constant
absolute temperature
bias voltage
edge leakage current
voltage drop due to ohmic contact
and bulk resistance of semiconductor channel.
(ohmic contact is a metal-semiconductor contact that has
a linear I-V and non-rectifying characteristics. )
V G e I I
x
nkT
R I V q
S D
s D
+ =
(


) 1 (
) (
28
C-V characteristics
Semi-empirical equation

approximated by

:
:
:
:
0
C
j
j
F
C
V
m
C
n
j
j
D
V
V
C
V C
) 1 (
) (
0

=
V
I
G
D
D

=
grating coefficient
built-in potential of the barrier height of junction
zero-bias junction capacitance.
depletion capacitance coefficient.
m
j
j
V
V
C
) 1 (
0

= ) (V C
D
) ) 1 ( 1 (
) 1 (
1
0
j
C
m
j
j
V
mv
m F
V
V
C
+ +

+
for
for
j C
V F V <
j C
V F V >
29
Diode modeling
DC I-V measurement
When I
D
Rs << Bias voltage and ignore Is and GxV as compared with
Total diode current ID approximated by
nkT
S
e I
qV
nkT
qV
S D
e I I =
) log( ) log( ) log(
nkT
qV
S D
e I I + =
) log( ) log(
S
I e
nkT
qV
+ =
V I
kT e q
n

=
/ ) log(
/ ) log(
By taking the derivation with respect to V
30
Is can be calculated from the curve.
knowing n and Is. Gx can be found by curve fitting at low current region
At high current region, ignore GxV and Is as compared with


nkT
R I V q
S
S D
e I
) (
(


=
nkT
R I V q
S D
S D
e I I
) (
) log(
) (
) log( ) log( e
nkT
R I V q
I I
S D
S D

+ =
) log(
) (
) log( e
nkT
V V q
I
S

+ =
S D
R I V =
For Rs is a weak function of bias voltage V and increase with it
31
Small signal model
or simplified as
measure S-parameter at particular bias voltage and curve fitting.
measure S-parameter at various bias V and curve fitting to find
C-V relation data. One can use the C-V data and curve fitting to
find C-V semi-empirical equation.
32
Large Signal Model
33
: cutoff frequency
(bias and RF power dependent)
Noise: shot noise and thermal noise are two major source
Shot noise (mean square value)
Thermal noise (mean square value)
: bandwidth
q : charge of electron
n : ideality factor
T : absolute temperature
K : Boltzmann constant
these two noise sources are statistically uncorrelated.
T
f
D s
T
C R
f
2
1
=
f I I
n
q
i
s D s
+ = > < ) 2 (
2
2
2
> <
s
i
2
> <
T
i
f
R
kT
i
s
T
= > <
4
2
f
34
In addition Flicker noise
A random fashion of generation-recombination effect in the
depletion layer.
Energy concentrated at low frequency.
ID : the diode current.
f : center frequency
: bandwidth
, a, b : constant
(device dependent, a in the range of 0.5-2, and b is close to 1)
flicker noise is in the shunt with shot noise, and is uncorrelated to
thermal noise.
2
> <
f
i
f
f
I
k i
b
a
D
f f
= > <
2
f
f
k
35
Noise model
model parameters can be estimated from the measurement
of the diode noise.
cathode
anode
Cp2
Lp2
Rs
CD
ID
2
> <
f
i
2
> <
s
i
Cp1
2
> <
T
i
36
Schottky diode as level shift
ID
V
ID
S f f Drop D
S
D
f
f
S D
R I V V
I
I
q
KT
V
KT
qV
I I
+ =
=

,
) ln(
) 1 (exp
Both Vf and Rs are function of temperature but temperature coefficient
of Vf dominates.
Temperature coefficient of VD drop typically ranges from -1 to 2 mV/
o
C
Low diode forward current have temperature coefficient close to 2 mV/
o
C
High diode forward current have temperature coefficient close to 1 mV/
o
C
37
Diode
multiplier
Detector
Mixer
Varactor
Switch
Limiter
Level-Shifting Device
Cathode Anode
Small signal model

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