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MOSFET Small Signal Model and Analysis

•Just as we did with the BJT, we can consider the MOSFET amplifier analysis in two parts:

•Find the DC operating point

•Then determine the amplifier output parameters for very small input signals.

Georgia Tech

ECE 3040 - Dr. Alan Doolittle

MOSFET Small Signal Model and Analysis
i
1
i
2
Linearize
over “small
signal
i
1
i
2
Linear
+
Non-Linear I-V
relationship
(BJT,
+
+
+
range”
V
Two Port
V
V 1
2
V 1
2
-
- MOSFET,
etc…)
- Network
-
i
DS
i
GS
v
DS
v
GS
General “y-parameter” Network
MOSFET “y-parameter” Network
I 1 =y 11 V 1 +
y 12 V 2
I GS =y 11 V GS + y 12 V DS
I 2 =y 21 V 1 + y 22 V 2
I DS =y 21 V GS + y 22 V DS
Georgia Tech
ECE 3040 - Dr. Alan Doolittle
MOSFET Small Signal Model and Analysis
[
y
I GS
[
y
V
11
12
[
GS
I
=
j
y
=
y
y
V
ij
I DS
21
22
DS
V
i
V
,
Q
,
V
,
Q
GS
DS
I GS =y 11 V GS + y 12 V DS
I DS =y 21 V GS + y 22 V DS
Derivative of current-voltage equation
evaluated at the Quiescent Point
MOSFET Amplifiers are biased into Saturation (or Active Mode)
K
n
[(
I
=
V
-
V
) ](
2
1+ l
V
)
for
V
V
-
V
DS
GS
TN
DS
DS
GS
TN
2
1.) Input Conductance
I
I
GS
GS
I
=
0
= 0
and
=
0
y
=
0
and y
=
0
GS
11
12
V
V
GS
DS
2.) Output Conductance
I
l
K
DS
n
=
y
=
(
V
-
V
) 2
22
GS
T
V
2
DS
3.) Transconductance
I
DS
=
y
=
K
(
V
-
V
)(
1
+ l
V
)
21
n
GS
T
DS
V
GS
Georgia Tech
ECE 3040 - Dr. Alan Doolittle
[[[
MOSFET Small Signal Model and Analysis
Compare with BJT Results
There is a large amount of symmetry between the MOSFET and the BJT
MOSFET
BJT
l
K
I
I
n
=
g
=
(
V
-
V
)
2
DS
y
=
Each of these
parameters
act in the
same manner
C
y
=
22
o
GS
T
22
2
1
V
+
V
+ V
A
CE
DS
l
I
I
y
=
g
=
K
(
V
-
V
)(
1
+
l V
)
DS
C
=
y
=
21
m
n
GS
T
DS
21
-
V
ˆ
V
GS
TN
T
Ê Á V
˜
Ë 2
¯
Georgia Tech
ECE 3040 - Dr. Alan Doolittle
MOSFET Small Signal Model and Analysis
Putting the mathematical model into a small signal equivalent circuit
Compare this to the BJT small signal equivalent circuit
Georgia Tech
ECE 3040 - Dr. Alan Doolittle
MOSFET Small Signal Model and Analysis
Example: Jaeger 13.94
Calculate the voltage gain, A v =v o /v s
Given: K n =1 mA/V 2
, l=0.015 V -1
Bias Point of: I DS =2 mA,
V DS =7.5V
Georgia Tech
ECE 3040 - Dr. Alan Doolittle
MOSFET Small Signal Model and Analysis
Example: Jaeger 13.94
l
K
n
( V
) 2
g
= K
(
)(
)
g
=
-
V
V
-V
1+ l V
m
n
GS
T
DS
o
GS
T
2
Need to find V GS -V T
K
n
[(
2
=
V
-
V
) ](
1
+ l
V
)
I DS
GS
TN
DS
2
2
1
mA
/
V
[(
)
2
](
2 mA =
V
-
V
1
+
0.015 (7.5)
)
GS
TN
2
4
V
-
V
=
= 1.9
V
GS
TN
1.11
\
g
=
2.11
mS
g
=
27.1
m
S
r
=
36.9
k W
m
o
o
Georgia Tech
ECE 3040 - Dr. Alan Doolittle
MOSFET Small Signal Model and Analysis
Example: Jaeger 13.94
v
v
v
o
GS
o
A
=
=
v
v
v
v
s
s
GS
v
1 Meg
v
GS
o
(
)
=
=
0.99
and
= - g
r
Rd
R
3
= -
2.1
mS
(
3.48
k
)
= -
7.35
m
o
v
10
k
+
1
Meg
v
s
GS
v
v
v
o
GS
o
\
A
=
=
= - 7.27
[V
/
V ]
v
v
v
v
s
s
GS
Georgia Tech
ECE 3040 - Dr. Alan Doolittle
MOSFET Small Signal Model and Analysis
Overlap of
Gate Oxide
Overlap of
Gate Oxide
LD
LD
Gate to
channel to
Bulk
capacitance
Reverse Bias Junction capacitances
Georgia Tech
ECE 3040 - Dr. Alan Doolittle
MOSFET Small Signal Model and Analysis
Complete Model of a MOSFET
Overlap of
Gate Oxide
g
g
=
g
mb
m
Due to effective
modulation of the
threshold voltage.
2
V
+ 2 f
SB
F
Overlap of
Gate Oxide
and Gate to
channel
capacitance
Gate to
channel to
Bulk
capacitance
Reverse Bias Junction capacitances
Georgia Tech
ECE 3040 - Dr. Alan Doolittle
MOSFET Small Signal Model and Analysis
SPICE MOSFET Model
SPICE models the drain current ( I DS ) of an n-channel MOSFET using the
following parameters/equations (SPICE variables are shown in ALL
CAPPITAL LETTERS)
Cutoff:
I DS = 0
Linear:
KP
Ê
W
ˆ
I
=
Á
˜ V
[
2
(
V
-
VTH
)
-
V
](
1
+
(
LAMBDA V
)
)
DS
Á
˜
DS
GS
DS
DS
2
L
Ë
¯
EFF
Saturation:
KP
Ê
W
ˆ
[(
2
I
=
Á
˜
V
-
VTH
) ](
1
+
(
LAMBDA V
)
)
DS
Á
˜
GS
DS
2
L
Ë
¯
EFF
Threshold Voltage:
V
=
VTO
+
GAMMA(
2
PHI
-
V
-
2
PHI )
TH
BS
Channel Length
L
EFF =L-2LD
Georgia Tech
ECE 3040 - Dr. Alan Doolittle
MOSFET Small Signal Model and Analysis
SPICE MOSFET Model – Additional Parameters
SPICE takes many of it’s parameters from the integrated circuit
layout design:
W
AS=WxL diff (source)
PS=2xL diff (source)+W
L
PD=2xL diff (drain)+W
L diff (source)
L diff (drain)
Source
Gate
Drain
L = polysilicon gate length
W = polysilicon gate width
AS = source area
PD = perimeter of drain diffusion (not including edge under gate)
PS = perimeter of source diffusion (not including edge under gate)
NRD = number of “squares” in drain diffusion
NRS = number of “squares” in source diffusion
Specified in terms of the
minimum feature size
Georgia Tech
ECE 3040 - Dr. Alan Doolittle
MOSFET Small Signal Model and Analysis
SPICE MOSFET Model – Additional Parameters
Most
Used
Georgia Tech
ECE 3040 - Dr. Alan Doolittle
MOSFET Amplifiers
What is the Maximum Gain Possible?
Is it saturated
(Constant current)?,
V
>
V
-
V
DS
GS
TP
but V
=
V
DS
GS
and V
0 for a depletion mode MOSFET
so
,
TP
0 > -
V
is
always satisfied.
Is Saturated!
TP
AC
Signal
Gate
Bias
= g
-
v
A Max
v
,
m
o
g o is internal to the
transistor and can not be
resistor due to external
circuitry will lower the
gain. For this reason
K
(
V
-
V
)(
1
+ l
V
)
current sources are often
GS
T
DS
A = n
-
v
,
Max
l
K
(
2
V
-
V
)
n
GS
T
1 + l
V
)
DS
of bias resistors in
amplifier circuits.
A = (
-
v
,
Max
l
(
V
-
V
)
GS
T
Georgia Tech
ECE 3040 - Dr. Alan Doolittle