Aug.

1999
20k
STB
STROBE INPUT
2k
380
1.6k
INPUT
COM
VCC
OUTPUT
GND
The six circuits share the STB, COM, VCC, GND.
The diodes shown by broken line are parasite diodes and must not
be use.
Unit :
1 STROBE INPUT STB
INPUT OUTPUT
IN1
IN2
IN3
IN4
IN5
IN6
COM COMMON GND
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
O6
O5
O4
O3
O2
O1
VCC
16P4(P)
Outline 16P2N-A(FP)
PIN CONFIGURATION (TOP VIEW)
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54534P/FP
6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE
DESCRIPTION
M54534P and M54534FP are six-circuit transistor arrays.
The circuits are made of NPN transistors. Both the semicon-
ductor integrated circuits perform high-current driving with
extremely low input-current supply.
FEATURES
G
Medium breakdown voltage (BVCEO 20V)
G
High-current driving (Ic(max) =320mA)
G
With clamping diodes
G
Wide input voltage range (VI = 25 to +20V)
G
Wide operating temperature range (Ta = 20 to +75C)
G
With strobe input
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps).
FUNCTION
The M54534P and M54534FP each have six circuits consist-
ing of NPN transistors. Each input has a diode and 1.6k
esistor in series. Each input is connected, and each output
is connected spike-killer clamping diode, emitters of each
transistor is connected to GND (pin 8), strobe input is con-
nected to (pin 1), clamping diode is connected COM pin (pin
9) and VCC is connected to the pin 16 in common.
The collector current is 320mA maximum. Collector-emitter
supply voltage is 20V maximum.
M54534FP is enclosed in a molded small flat package, en-
abling space-saving design.
CIRCUIT SCHEMATIC (EACH CIRCUIT)
Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Strobe input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
V
V
mA
V
V
mA
V
W
C
C
10
0.5 ~ +20
320
25 ~ +20
0.5~ +20
320
20
1.47/1.00
20 ~ +75
55 ~ +125
VCC
VCEO
IC
VI
V(STB)
IF
VR
Pd
Topr
Tstg
Ratings Symbol Parameter Conditions Unit
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = 20 ~ +75C)
Output, H
Current per circuit output, L
Ta = 25C, when mounted on board
Aug.1999
VI = 3.2V
VI(STB) = 2.4V
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54534P/FP
6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = 20 ~ +75C)
300
150
V
V
VCC
VO
VIL
VIH(STB)
VIL(STB)

3
0
3.2
0
2.4
0
8
20
IC
0
0

mA
Parameter
Limits
min typ max
Symbol Unit
Supply voltage
Output voltage
Collector current
Per channel
H Input voltage
L Input voltage
H Input voltage (strobe input)
L Input voltage (strobe input)
VCC = 6.5V, Duty Cycle
P : no more than 25%
FP : no more than 15%
VCC = 6.5V, Duty Cycle
P : no more than 65%
FP : no more than 35%
VIH 18
0.7
18
0.2
V
V
V
V
FUNCTIONAL TABLE
IN
L
H
L
H
STB
L
L
H
H
OUT
H
H
H
L

0.3
0.15
0.5

7.9

1.4

120
3000

0.85
0.5
1.4
20
20
20
2.4
100
200

20

1000
Collector-emitter breakdown voltage
Input reverse current
Strobe input current
Strobe input reverse current
Clamping diode forward voltage
Clamping diode reverse current
Supply current
IIR
II(STB)
IR(STB)
VF
IR
ICC
VCC = 8V, VI = 3.2V, VI(STB) = 2.4V
VCC = 8V, VI = 25V
VCC = 8V, VI = 3.2V (all input), VI(STB) = 0.2V
VCC = 8V, VI = 0V, VI(STB) = 20V
IF = 320mA
VR = 20V
VCC = 8V, VI = 3.2V (all input), VI(STB) = 2.4V
VCE = 4V, VCC = 6.5V, IC = 300mA, Ta = 25C,
VI(STB) = 2.4V
V
A
mA
A
V
A
mA

II
VCE (sat)
V
+ : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any
conditions.
VCC = 8V, VI = 3.2V, VI(STB) = 0.2V, ICEO = 100A
Symbol Unit Parameter Test conditions
Limits
min typ
+
max
Collector-emitter saturation voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 20 ~ +75C)
V (BR) CEO
Input current
VCC = 6.5V, IC = 250mA
VCC = 3V, IC = 120mA
mA
ns
ns

22
1200

Symbol Unit Parameter Test conditions

Limits
min typ max
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C)
Turn-on time
Turn-off time
CL = 15pF (note 1)
ton
toff
hFE
DC amplification factor
Aug.1999
ton
50% 50%
50% 50%
toff
INPUT
OUTPUT
PG OUTPUT
50
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10s, tr = 6ns, tf = 6ns, ZO = 50
VP = 3.2VP-P
(2) Input-output conditions : RL = 40, VO = 10V, VCC = VSTB = 6.5V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
CL
Measured device
OPEN
STB
INPUT VO VCC
RL
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54534P/FP
6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE
TYPICAL CHARACTERISTICS
TIMING DIAGRAM NOTE 1 TEST CIRCUIT
Ambient temperature Ta (C)
P
o
w
e
r

d
i
s
s
i
p
a
t
i
o
n


P
d

(
W
)
0
0
0.5
1.0
1.5
2.0
25 50 75 100
Duty-Cycle-Collector Characteristics
(M54534P)
Duty cycle (%)
The collector current values
represent the current per circuit.
Repeated frequency 10Hz
The value in the circle represents the
value of the simultaneously-operated circuit.
Ta = 25C, VCC = 6.5V
0
0
100
200
300
400
5
1~3
6
4
20 40 60 80 100
C
o
l
l
e
c
t
o
r

c
u
r
r
e
n
t


I
c

(
m
A
)
Duty cycle (%)
0
0
100
200
300
400
1,2
5
6
3
4
20 40 60 80 100
C
o
l
l
e
c
t
o
r

c
u
r
r
e
n
t


I
c

(
m
A
)
Duty-Cycle-Collector Characteristics
(M54534P)
The collector current values
represent the current per circuit.
Repeated frequency 10Hz
The value in the circle represents the
value of the simultaneously-operated circuit.
Ta = 75C, VCC = 6.5V
Thermal Derating Factor Characteristics
M54534P
M54534FP
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage VCE (sat) (V)
C
o
l
l
e
c
t
o
r

c
u
r
r
e
n
t


I
c

(
m
A
)
0
100
200
300
400
0 0.1 0.2 0.3 0.4 0.5
VI = 3.2V
VCC = 3V
VSTB = 2.4V
Ta = 20C
Ta = 25C
Ta = 75C
Aug.1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54534P/FP
6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE
5
6
Duty cycle (%)
3
4
C
o
l
l
e
c
t
o
r

c
u
r
r
e
n
t


I
c

(
m
A
)
1,2
5
6
0
0
100
200
300
400
20 40 60 80 100 0
0
100
200
300
400
20 40 60 80 100
Duty cycle (%)
1
2
3
4
C
o
l
l
e
c
t
o
r

c
u
r
r
e
n
t


I
c

(
m
A
)
Duty-Cycle-Collector Characteristics
(M54534FP)
Duty-Cycle-Collector Characteristics
(M54534FP)
The collector current values
represent the current per circuit.
Repeated frequency 10Hz
The value in the circle represents the
value of the simultaneously-operated circuit.
Ta = 25C, VCC = 6.5V
The collector current values
represent the current per circuit.
Repeated frequency 10Hz
The value in the circle represents the
value of the simultaneously-operated circuit.
Ta = 75C, VCC = 6.5V
DC Amplification Factor
Collector Current Characteristics Grounded Emitter Transfer Characteristics
Input Characteristics
Input voltage VI (V)
C
o
l
l
e
c
t
o
r

c
u
r
r
e
n
t


I
c

(
m
A
)
I
n
p
u
t

c
u
r
r
e
n
t


I
I

(
m
A
)
Input voltage VI (V)
D
C

a
m
p
l
i
f
i
c
a
t
i
o
n

f
a
c
t
o
r


h
F
E
10
1
10
2
10
3
3
5
7
10
4
3
5
7
10
2
3 5 7 10
3
3 5 7
VCC = 6.5V, VI(STB) = 2.4V
VCE = 4V
Ta = 20C
Ta = 25C
Ta = 75C
VCC = 6.5V, VI(STB) = 2.4V
VCE = 4V
Ta = 20C
Ta = 25C
Ta = 75C
VCC = 8V
VSTB = 2.4V
Ta = 20C
Ta = 25C
Ta = 75C
0
100
200
300
400
0 1 2 3 4
0
2
4
6
8
10
0 20 5 10 15
Collector current Ic (mA)
Supply Current Characteristics (common)
Supply voltage VCC (V)
S
u
p
p
l
y

c
u
r
r
e
n
t


I
C
C

(
m
A
)
VSTB = 2.4V
VI = 3.2V
Ta = 20C
Ta = 25C
Ta = 75C
0
50
100
150
200
0 2 4 6 8 10
Aug.1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54534P/FP
6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE
Clamping Diode Characteristics
Forward bias voltage VF (V)
F
o
r
w
a
r
d

b
i
a
s

c
u
r
r
e
n
t


I
F

(
m
A
)
Ta = 20C
Ta = 25C
Ta = 75C
0
100
200
300
400
0 0.5 1.0 1.5 2.0