tm

2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGH40N60SFD Rev.C
F
G
H
4
0
N
6
0
S
F
D

6
0
0
V
,

4
0
A

F
i
e
l
d

S
t
o
p

I
G
B
T

July 2008
Absolute Maximum Ratings
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Description Ratings Units
V
CES
Collector to Emitter Voltage 600 V
V
GES
Gate to Emitter Voltage 20 V
I
C
Collector Current @ T
C
=25
o
C 80 A
Collector Current @ T
C
=100
o
C 40 A
I
CM (1)
Pulsed Collector Current
@ T
C
=25
o
C
120 A
P
D
Maximum Power Dissipation @ T
C
=25
o
C 290 W
Maximum Power Dissipation @ T
C
=100
o
C 116 W
T
J
Operating J unction Temperature -55 to +150
o
C
T
stg
Storage Temperature Range -55 to +150
o
C
T
L
Maximum Lead Temp. for soldering
Purposes, 1/8 from case for 5 seconds
300
o
C
Symbol Parameter Typ. Max. Units
R
J C
(IGBT) Thermal Resistance, J unction to Case - 0.43
o
C/W
R
J C
(Diode) Thermal Resistance, J unction to Case - 1.45
o
C/W
R
J A
Thermal Resistance, J unction to Ambient - 40
o
C/W
G
E
C
E
C
G
COLLECTOR
(FLANGE)
FGH40N60SFD
600V, 40A Field Stop IGBT
Features
High current capability
Low saturation voltage: V
CE(sat)
=2.3V @ I
C
=40A
High input impedance
Fast switching
RoHS compliant
Applications
Induction Heating, UPS, SMPS, PFC
General Description
Using Novel Field Stop IGBT Technology, Fairchilds new ses-
ries of Field Stop IGBTs offer the optimum performance for
Induction Heating, UPS, SMPS and PFC applications where
low conduction and switching losses are essential.
2 www.fairchildsemi.com FGH40N60SFD Rev. C
F
G
H
4
0
N
6
0
S
F
D

6
0
0
V
,

4
0
A

F
i
e
l
d

S
t
o
p

I
G
B
T

Package Marking and Ordering Information
Electrical Characteristics of the IGBT T
C
=25C unless otherwise noted
Device Marking Device Package
Packaging
Type Qty per Tube
Max Qty
per Box
FGH40N60SFD FGH40N60SFDTU TO-247 Tube 30ea -
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
CES
Collector to Emitter Breakdown Voltage V
GE
=0V, I
C
=250A 600 - - V
BV
CES
T
J
Temperature Coefficient of Breakdown
Voltage
V
GE
=0V, I
C
=250A
- 0.6 - V/
o
C
I
CES
Collector Cut-Off Current V
CE
=V
CES
, V
GE
=0V - - 250 A
I
GES
G-E Leakage Current V
GE
=V
GES
, V
CE
=0V - - 400 nA
On Characteristics
V
GE(th)
G-E Threshold Voltage I
C
=250A, V
CE
=V
GE
4.0 5.0 6.5 V
V
CE(sat)
Collector to Emitter Saturation Voltage
I
C
=40A, V
GE
=15V - 2.3 2.9 V
I
C
=40A, V
GE
=15V,
T
C
=125
o
C
- 2.5 - V
Dynamic Characteristics
C
ies
Input Capacitance
V
CE
=30V
,
V
GE
=0V,
f =1MHz
- 2110 - pF
C
oes
Output Capacitance - 200 - pF
C
res
Reverse Transfer Capacitance - 60 - pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
CC
=400V, I
C
=40A,
R
G
=10, V
GE
=15V,
Inductive Load, T
C
=25
o
C
- 25 - ns
t
r
Rise Time - 42 - ns
t
d(off)
Turn-Off Delay Time - 115 - ns
t
f
Fall Time - 27 54 ns
E
on
Turn-On Switching Loss - 1.13 - mJ
E
off
Turn-Off Switching Loss - 0.31 - mJ
E
ts
Total Switching Loss - 1.44 - mJ
t
d(on)
Turn-On Delay Time
V
CC
=400V, I
C
=40A,
R
G
=10, V
GE
=15V,
Inductive Load, T
C
=125
o
C
- 24 - ns
t
r
Rise Time - 43 - ns
t
d(off)
Turn-Off Delay Time - 120 - ns
t
f
Fall Time - 30 - ns
E
on
Turn-On Switching Loss - 1.14 - mJ
E
off
Turn-Off Switching Loss - 0.48 - mJ
E
ts
Total Switching Loss - 1.62 - mJ
Q
g
Total Gate Charge
V
CE
=400V, I
C
=40A,
V
GE
=15V
- 120 - nC
Q
ge
Gate to Emitter Charge - 14 - nC
Q
gc
Gate to Collector Charge - 58 - nC
3 www.fairchildsemi.com FGH40N60SFD Rev.C
F
G
H
4
0
N
6
0
S
F
D

6
0
0
V
,

4
0
A

F
i
e
l
d

S
t
o
p

I
G
B
T


Electrical Characteristics of the Diode T
C
=25C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max Units
V
FM
Diode Forward Voltage I
F
=20A
T
C
=25
o
C - 1.95 2.6
V
T
C
=125
o
C - 1.85 -
t
rr
Diode Reverse Recovery Time
I
ES
=20A, dI
ES
/dt =200A/s
T
C
=25
o
C - 45 -
ns
T
C
=125
o
C - 140 -
Q
rr
Diode Reverse Recovery Charge
T
C
=25
o
C - 75 -
nC
T
C
=125
o
C - 375 -
4 www.fairchildsemi.com FGH40N60SFD Rev. C
F
G
H
4
0
N
6
0
S
F
D

6
0
0
V
,

4
0
A

F
i
e
l
d

S
t
o
p

I
G
B
T

Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
0.0 1.5 3.0 4.5 6.0
0
20
40
60
80
100
120
20V
T
C
= 25
o
C


15V
12V
10V
V
GE
= 8V
C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t
,

I
C

[
A
]
Collector-Emitter Voltage, V
CE
[V]
0.0 1.5 3.0 4.5 6.0
0
20
40
60
80
100
120
20V
T
C
= 125
o
C


15V
12V
10V
V
GE
= 8V
C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t
,

I
C

[
A
]
Collector-Emitter Voltage, V
CE
[V]
0 1 2 3 4
0
20
40
60
80
Common Emitter
V
GE
= 15V
T
C
= 25
o
C
T
C
= 125
o
C


C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t
,

I
C

[
A
]
Collector-Emitter Voltage, V
CE
[V]
6 8 10 12 13
0
40
80
120
Common Emitter
V
CE
= 20V
T
C
= 25
o
C
T
C
= 125
o
C
C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t
,

I
C

[
A
]
Gate-Emitter Voltage,V
GE
[V]
4 8 12 16 20
0
4
8
12
16
20
I
C
= 20A
40A
80A
Common Emitter
T
C
= -40
o
C


C
o
l
l
e
c
t
o
r
-
E
m
i
t
t
e
r

V
o
l
t
a
g
e
,

V
C
E

[
V
]
Gate-Emitter Voltage, V
GE
[V]
25 50 75 100 125
1.0
1.5
2.0
2.5
3.0
3.5
4.0
80A
40A
I
C
= 20A
Common Emitter
V
GE
= 15V


C
o
l
l
e
c
t
o
r
-
E
m
i
t
t
e
r

V
o
l
t
a
g
e
,

V
C
E

[
V
]
Collector-EmitterCase Temperature, T
C
[
o
C]
5 www.fairchildsemi.com FGH40N60SFD Rev. C
F
G
H
4
0
N
6
0
S
F
D

6
0
0
V
,

4
0
A

F
i
e
l
d

S
t
o
p

I
G
B
T

Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
GE
Figure 8. Saturation Voltage vs. V
GE
Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics
Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.
Gate Resistance
4 8 12 16 20
0
4
8
12
16
20
I
C
= 20A
40A
80A
Common Emitter
T
C
= 25
o
C


C
o
l
l
e
c
t
o
r
-
E
m
i
t
t
e
r

V
o
l
t
a
g
e
,

V
C
E

[
V
]
Gate-Emitter Voltage, V
GE
[V]
4 8 12 16 20
0
4
8
12
16
20
I
C
= 20A
40A
80A
Common Emitter
T
C
= 125
o
C


C
o
l
l
e
c
t
o
r
-
E
m
i
t
t
e
r

V
o
l
t
a
g
e
,

V
C
E

[
V
]
Gate-Emitter Voltage, V
GE
[V]
0.1 1 10
0
1000
2000
3000
4000
5000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
o
C
C
rss
C
oss
C
iss


C
a
p
a
c
i
t
a
n
c
e

[
p
F
]
Collector-Emitter Voltage, V
CE
[V]
30 0 50 100 150
0
3
6
9
12
15
Common Emitter
T
C
= 25
o
C
300V
200V
V
cc
= 100V


G
a
t
e
-
E
m
i
t
t
e
r

V
o
l
t
a
g
e
,

V
G
E

[
V
]
Gate Charge, Q
g
[nC]
0 10 20 30 40 50
10
100
Common Emitter
V
CC
= 400V, V
GE
= 15V
I
C
= 40A
T
C
= 25
o
C
T
C
= 125
o
C
t
d(on)
t
r

S
w
i
t
c
h
i
n
g

T
i
m
e

[
n
s
]
Gate Resistance, R
G
[]
200
1 10 100 1000
0.01
0.1
1
10
100
1ms
10 ms
DC
Single Nonrepetitive
Pulse T
C
= 25
o
C
Curves must be derated
linearly with increase
in temperature
10s
100s

C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t
,

I
c

[
A
]
Collector-Emitter Voltage, V
CE
[V]
400
6 www.fairchildsemi.com FGH40N60SFD Rev. C
F
G
H
4
0
N
6
0
S
F
D

6
0
0
V
,

4
0
A

F
i
e
l
d

S
t
o
p

I
G
B
T

Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs. Gate Resistance
Collector Current
Figure 17. Switching Loss vs. Collector Current Figure 18. Turn off Switching
SOA Characteristics
0 10 20 30 40 50
10
100
1000
Common Emitter
V
CC
= 400V, V
GE
= 15V
I
C
= 40A
T
C
= 25
o
C
T
C
= 125
o
C
t
d(off)
t
f

S
w
i
t
c
h
i
n
g

T
i
m
e

[
n
s
]
Gate Resistance, R
G
[]
5500
20 40 60 80
10
100
500
Common Emitter
V
GE
= 15V, R
G
= 10
T
C
= 25
o
C
T
C
= 125
o
C
t
r
t
d(on)

S
w
i
t
c
h
i
n
g

T
i
m
e

[
n
s
]
Collector Current, I
C
[A]
20 40 60 80
10
100
500
Common Emitter
V
GE
= 15V, R
G
= 10
T
C
= 25
o
C
T
C
= 125
o
C
t
d(off)
t
f


S
w
i
t
c
h
i
n
g

T
i
m
e

[
n
s
]
Collector Current, I
C
[A]
0 10 20 30 40 50
0.3
1
10
Common Emitter
V
CC
= 400V, V
GE
= 15V
I
C
= 40A
T
C
= 25
o
C
T
C
= 125
o
C E
on
E
off


S
w
i
t
c
h
i
n
g

L
o
s
s

[
m
J
]
Gate Resistance, R
G
[]
0.2
20 30 40 50 60 70 80
0.1
1
10
30
Common Emitter
V
GE
= 15V, R
G
= 10
T
C
= 25
o
C
T
C
= 125
o
C
E
on
E
off

S
w
i
t
c
h
i
n
g

L
o
s
s

[
m
J
]
Collector Current, I
C
[A]
1 10 100 1000
1
10
100
Safe Operating Area
V
GE
= 15V, T
C
= 125
o
C

C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t
,

I
C

[
A
]
Collector-Emitter Voltage, V
CE
[V]
200
7 www.fairchildsemi.com FGH40N60SFD Rev. C
F
G
H
4
0
N
6
0
S
F
D

6
0
0
V
,

4
0
A

F
i
e
l
d

S
t
o
p

I
G
B
T

Typical Performance Characteristics
Figure 19. Forward Characteristics Figure 20. Typical Reverse Current vs.
Reverse Voltage
Figure 21. Stored Charge Figure 22. Reverse Recovery Time
Figure 23.Transient Thermal Impedance of IGBT
50 200 400 600
0.01
0.1
1
10
100
200
R
e
v
e
r
s
e

C
u
r
r
e
n
t

,

I
R

[

A
]
Reverse Voltage, V
R
[V]
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 75
o
C

0 1 2 3 4
0.2
1
10
80
T
J
= 75
o
C
T
J
= 25
o
C
T
C
= 25
o
C
T
C
= 75
o
C
T
C
= 125
o
C
T
J
= 125
o
C

Forward Voltage, V
F
[V]
F
o
r
w
a
r
d

C
u
r
r
e
n
t
,

I
F

[
A
]
5 10 20 30 40
30
40
50
60
200A/s
di/dt = 100A/s

R
e
v
e
r
s
e

R
e
c
o
v
e
r
y

T
i
m
e
,

t
r
r

[
n
s
]
Forward Current, I
F
[A]
5 10 20 30 40
20
40
60
80
100
200A/s
di/dt = 100A/s

S
t
o
r
e
d

R
e
c
o
v
e
r
y

C
h
a
r
g
e
,

Q
r
r

[
n
C
]
Forward Current, I
F
[A]
1E-5 1E-4 1E-3 0.01 0.1 1
1E-3
0.01
0.1
1
0.2
0.5
0.1
0.05
0.01
0.02
single pulse

T
h
e
r
m
a
l

R
e
s
p
o
n
s
e

[
Z
t
h
j
c
]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2

Peak T
j
= Pdm x Zthjc + T
C
t
1
P
DM
t
2
8 www.fairchildsemi.com FGH40N60SFD Rev. C
F
G
H
4
0
N
6
0
S
F
D

6
0
0
V
,

4
0
A

F
i
e
l
d

S
t
o
p

I
G
B
T

Mechanical Dimensions
TO-247AB (FKS PKG CODE 001)
Dimensions in Millimeters
Rev. I35
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is
not intended to be an exhaustive list of all such trademarks.
* EZSWITCH and FlashWriter

are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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Definition of Terms
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Distributors are genuine parts, have full traceability, meet Fairchilds quality standards for handing and storage and provide access to Farichilds full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is
committed to committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized
distributors.