13MVD0050

1]I-V characteristics of NMOS & PMOS :-

Objective:-
Plot the I-V characteristics of NMOS and PMOS transistors.
1. ID vs. VDS with varying VGS for both NMOS & PMOS.

Circuit for NMOS:-








13MVD0050

Output graph for NMOS :-












13MVD0050

Circuit Diagram of PMOS:-












13MVD0050

Output graph for PMOS:-


Inference:-




Conclusion:-




13MVD0050

2] CMOS INVERTER:-
Objective:-
1. Transient analysis of CMOS inverter.
2. Transfer characteristic of CMOS inverter.
3. Transfer characteristics of CMOS inverter with effect of aspect ratio.
4. Delay of CMOS inverter.
5. Power dissipation of CMOS inverter.

Circuit Diagram:-





13MVD0050

Output graph for transient analysis of CMOS inverter:-













13MVD0050

Output graph of transfer characteristics of CMOS inverter:-













13MVD0050

Output graph for width variation:-

Analysis:-
1. Delay of CMOS inverter:-

2. Power dissipation of CMOS inverter:-

Inference:-



Conclusion:-

13MVD0050

3] Channel length modulation:-
Objective:-
1. To study effect of channel length modulation.
2. Calculation of the lambda parameter.
3. Calculation of output resistance.

Circuit diagram:-






13MVD0050

Output graph:-


Analysis:-
1. channel length modulation parameter lambda:-




2. Output resistance ro:-




13MVD0050

Inference:-




Conclusion:-



Reference:-
CMOS Digital integrated circuits by sung-mo-kang.














13MVD0050

4] Body bias effect
Objective:-
1. To observe the body bias effect on drain current.
2. To calculate the vt for different values of VSB.

Circuit Diagram:-







13MVD0050


Output graph for ID vs VGS wIith varying VSB:-











13MVD0050

Output graph for ID vs VSB:-

Analysis:-
1 .vt for the different value of vsb:-



Inference:-


Conclusion:-

Reference:- microelectronics circuits by sedra & smith.
13MVD0050

5]CMOS inverter symbol:-
Objective:-
1.to study how to create and use symbol.

Schematic for creating CMOS inverter symbol:-








13MVD0050

CMOS inverter symbol:-












13MVD0050

Application of the symbol:-












13MVD0050

Output graph:-


Inference:-


Conclusion:-







13MVD0050

6]NAND:-
Objective:-
1. To create the NAND gate symbol & study its functionality.
2. to calculate the delay & power dissipation
.
Schematic to create NAND symbol:-















13MVD0050

Symbol of NAND gate:-












13MVD0050

Application of NAND symbol:-












13MVD0050

Output graph:-

Analysis:-
1.delay calculation:-


2.power dissipation :-


Inference:-


Conclusion:-
13MVD0050

7]NOR:-
Objective:-
1. To create the NOR gate symbol & study its functionality.
2. to calculate the delay & power dissipation

Schematic to create NOR symbol:-







13MVD0050

Symbol of NOR gate:-












13MVD0050

Application of NOR symbol:-












13MVD0050

Output graph:-

Analysis:-
1. delay calculation:-


2. power dissipation :-


Inference:-


Conclusion:-
13MVD0050

8]Chain of inverter:-
Objective:-
1. To calculate delay for chain of inverter.
2. To study the functionality.

Circuit Diagram:-







13MVD0050

Output graph:-

Analysis:-
1.delay calculation:-


2.Power calculation:-

Inference:-


Conclusion:-

13MVD0050

9] Noise margin for inverter:-
Objective:-
1. To calculate the noise margin for CMOS inverter

Circuit diagram of CMOS inverter:-






13MVD0050

Output graph for noise margine:-


Analysis:-
Noise margin:-



Inference:-


Conclusion:-