Interpretation of Results:

The experiment demonstrated the biasing circuit for a junction Field Effect Transistor. For the
previous experiments the operation was all about the characteristics of BJT. But by this time, Field Effect
Transistor (FET) is considered. FETs are unipolar devices because unlike BJTs that both use hole and
electron current, they operate only with one type of charge carrier, either a hole or an electron. There
are two types of FET: JFET (Junction Field Effect Transistor) and MOSFET (Metal Oxide Semiconductor
Field Transistor). For this experiment, JFETs characteristic was observed.

First part of the experiment shows the JFET drain characteristics. We observed the effect of
drain voltage on drain current at zero gate bias. Drain voltage supply affects the operation of the circuit.
Based on the data gathered, as drain voltage supply increases, the current ID flowing through R3 also
increases. But when it reaches the pinch-off voltage of 3V the drain current becomes constant which is
the maximum drain current that a JFET can produce. Thus, it has entered the active region. Since there is
voltage applied between the gate and the source, the channel is a wide open path for electrons to flow.

Another supply is added which is the gate supply. Looking at the circuit the negative polarity of
the gate supply is connected to the p-type material of the JFET and the positive supply to the n-type
material. With that we can say that the gate-source junction is reverse biased. It should be noted that
JFET is always operated with the gate-source PN junction in reverse biased condition. With a gate supply
of -0.5V with increasing drain supply, the drain current still increases until it reaches the pinch-off
voltage and even much greater, giving an essentially constant value of drain current. Because of the
increase in gate-source voltage, narrowing of the channel occurs. It was noticed that the current flowing
between the source and drain is now limited. Having a gate supply of 3V it was noted that at maximum
gate source voltage, it pinched off all current through source and drain, forcing JFET into cut-off mode.
With that, the channel completely closed resulting to a zero drain current.

Second part of the experiment leads to effect of gate bias on drain current. Increasing the value
of gate supply voltage (VGG) also increases the gate-to-source voltage (VGS). In this set-up, gate supply
voltage is varied while keeping the drain supply constant. Having a fixed drain supply voltage with a
negatively increasing gate supply voltage, they came to a point that they are almost equal. In this case
drain current decreases until it reaches a zero drain current. Hence the cut-off voltage is observed to be
at -2.5 gate supply because at this value the drain current is from maximum to its minimum caused by
the widening of the depletion region until the channel completely closes. Considering the graph
obtained from the data gathered, the relationship between the voltage to source and the drain current
is not linear, hence, its exponential.












Conclusion:

Field Effect Transistor is a unipolar device having only one-charge carrier either electrons in an
N-type semiconductors or holes in a P-type semiconductor with the terminal sources, drain source and
gate source. It is a voltage-controlled transistor in which the gate source controls the output drain
current. The controlled drain current is passing from drain to source, and the controlling gate voltage is
applied between the gate and source.

JFET is always operated with gate to source PN junction reverse-biased. It is a depletion mode
resistor. Considering the drain supply voltage, as it increases drain current also increases until it reached
a constant current. When constant current is obtained drain supply voltages resistance is increasing. In
this case, the constant current is equal to the maximum current, which can only be obtained when gate
supply voltage is 0V. And when the gate supply voltage increases, the depletion region between the PN
junction increases as well, thus, drain current decreases. As a result the channel became narrower.

Having all the procedures done properly attaining the requirements needed, all the objectives of
the experiment are said to be successfully met.


References:
Lecture Notes in Electronics 2
Ph.D. Paglinawan, Arnold. Paglinawan, Charmaine. Sejera, Marloun. Sejera, Marianne. Chua, Vic
Dennis.