Chapter5 Mixer and VCO

Dr.
Cuong Huynh Telecommunications DepartmentHCMUT

1
Huynh Phu Minh Cuong
hpmcuong@hcmut.edu.vn

Department of Telecommunications
Faculty of Electrical and Electronics Engineering
Ho Chi Minh city University of Technology
Chapter 5
Mixer and Oscillator
MICROWAVE INTERGRATED CIRCUITS
Dr. Cuong Huynh Telecommunications DepartmentHCMUT
2
Mixer
Frequency translation device
Convert RF frequency to a lower IF or base band for easy
signal processing in receivers
Convert base band signal or IF frequency to a higher IF or
RF frequency for efficient transmission in transmitters
Creative use of nonlinearity or time-variance
These are usually harmful and unwanted
They generates frequencies not present at input
Used together with appropriate filtering
Remove unwanted frequencies
What is a mixer
An ideal nonlinearity mixer
x(t)
y(t)
x(t)y(t)
If
t B t y
t A t x
2
1
cos ) (
cos ) (
e
e
=
=
Then the output is
t
AB
t
AB
t B t A ) cos(
2
) cos(
2
cos cos
2 1 2 1 2 1
e e e e e e + + =
down convert up convert
4
Mixer
5
Mixer
6
Mixer
Mixer Fundamentals
IF
LO
Mixer
IF IF IF
V = A cos( t)
LO LO LO
V = A cos( t)
RF
V
RF
( )
IF LO
RF IF LO IF LO
A A
V = cos( + ) +cos( - )
2
High sideband Low sideband
7
Mixer
Mixers can be implemented using:
Nonlinear circuits
Commutating (switching) circuits.
+
-
+
-
V
IF
V
LO
V I
V
RF
R
L
Non-linear
component
V
RF
R
L
+
-
V
IF
V
LO
Switch

2 3
0 1 2 3
I = a + a V + a V + a V +
( )
LO LO LO
4 4 4
S t Cos( t) Cos(3 t) Cos(5 t) . . .
3 5
= e e + e
t t t
switching circuit
Mixer
Conversion gain lowers noise impact of following
stages
Noise Figure impacts receiver sensitivity
Port isolation want to minimize interaction between
the RF, IF, and LO ports
Linearity (IIP3) impacts receiver blocking
performance
Spurious response
Power match want max voltage gain rather than
power match for integrated designs
Power want low power dissipation
Sensitivity to process/temp variations need to make
it manufacturable in high volume
Mixer Metrics
Mixer
Conversion Gain
Conversion gain or loss is the ratio of the desired IF
output (voltage or power) to the RF input signal
value ( voltage or power).
signal RF the of voltage r.m.s.
signal IF the of voltage r.m.s.
Gain Conversion Voltage =
source the from power Available
load the to delivered power IF
Gain Conversion Power =
If the input impedance and the load impedance of the mixer are
both equal to the source impedance, then the voltage conversion
gain and the power conversion gain of the mixer will be the
same in dBs.
Mixer
Port-to-Port Isolations
RF
IF
LO
Isolation
Isolation between RF, LO and IF ports
LO/RF and LO/IF isolations are the most important
features.
Reducing LO leakage to other ports can be solved
by filtering.
Mixer
12
Mixer
LO Feed through
Feed through from the LO port to IF output port due to
parasitic capacitance, power supply coupling, etc.
Often significant due to strong LO output signal
If large, can potentially desensitize the receiver due to the extra
dynamic range consumed at the IF output
If small, can generally be removed by filter at IF output
Mixer
Reverse LO Feed through
Reverse feed through from the LO port to RF input
port due to parasitic capacitance, etc.
If large, and LNA doesnt provide adequate isolation, then
LO energy can leak out of antenna and violate emission
standards for radio
Must insure that isolation to antenna is adequate
Mixer
Self-Mixing of Reverse LO Feedthrough
LO component in the RF input can pass back through
the mixer and be modulated by the LO signal
DC and 2fo component created at IF output
Of no consequence for a heterodyne system, but can cause
problems for homodyne systems (i.e., zero IF)
Noise Figures: SSB vs DSB
Image
band
Signal
band
Thermal
noise
LO
IF
Signal
band
Thermal
noise
LO
0
Single side band
Double side band
Mixer
RF
IF
SNR
NF =
SNR
SSB Noise Figure
Broadband noise from mixer or front end filter will be located
in both image and desired bands
Noise from both image and desired bands will combine in
desired channel at IF output
Channel filter cannot remove this

Mixer
For zero IF, there is no image band
Noise from positive and negative frequencies combine, but the signals
combine as well
DSB noise figure is 3 dB lower than SSB noise figure
DSB noise figure often quoted since it sounds better
DSB Noise Figure
Mixer
Mixer Classification
Diode MOSFET
Active - Passive
Single-balanced Double-Balanced
Discrete implementations:
Single-diode and diode-ring mixers
IC implementations:
MOSFET passive mixer
Active mixers
Gilbert-cell based mixer
Square law mixer
Sub-sampling mixer
Harmonic mixer
Mixer
20
Mixer
Single-Ended Diode Mixer
21
Mixer
Single-Ended FET Mixer
( )
2
.
ds GS T
I Iss V V =
22
Mixer
Single-Ended FET Mixer
V
RF
R
b
V
BB1
C
l e arg
( )
2
0
.
ds SQ GSQ T
I K V V =
V
LO
C
l e arg
L
e
L
g
R
S
R
LO
V
BB2
V
DD
C
match
R
L
IF Filter
Matching
Network
MOSFET Mixer (with impedance matching)
23
Mixer
24
Mixer
25
Mixer
26
Mixer
Adding these two currents at the input to the low-pass filter gives
Note that the DC components of the diode currents cancel upon
combining. After low-pass filtering, the IF output is
27
Mixer
Single-Balanced Active Mixer
+V
LO
R
L
R
L
V
LO
V
RF
V
out
I I
DC RF
+
M1
M2 M3
The transistor M1 converts the RF voltage signal to the current signal.

Transistors M2 and M3 commute the current between the two branches.
DC 1 DC 1,RF m RF
I = I +I = I +g .V
The mixing operation of the mixer is performed by turning on and off two transistors
Q
2
and Q
3
in the switching stage using the large LO signal, V
LO
. The LO signal can be a
square wave or sinusoidal signal.
28
Mixer
+V
LO
R
L
R
L
V
LO
V
RF
V
out
I I
DC RF
+
M1
M2 M3
V
IF
= -R
L
(I
DC
+ g
m
V
RF
) , V
LO
> 0
+ -
V
IF
= R
L
(I
DC
+ g
m
V
RF
) , V
LO
< 0
It is observed that the IF signal is obtained
from toggling the signal term R
L
(I
DC
+g
m
V
RF
)
between positive and negative values. This is
equivalent to multiplying the term
R
L
(I
DC
+g
m
V
RFF
) with a bipolar square wave
S(t) having the amplitude of 1 and frequency
of f
LO.

S(t)
t
+1
-1
1/F
LO
The IF output signal is then
expressed as

V
IF
(t) = R
L
(I
DC
+ g
m
V
RF
)S(t)
29
Mixer

( )
LO LO LO
4 4 4
S t Cos( t) Cos(3 t) Cos(5 t) . . .
3 5
= e e + e
t t t
LO LO LO
4 4 4
Cos( t) Cos(3 t) Cos(5 t) . . .
3 5
| |
e e + e
|
t t t
\ .
In form of Fourier series, S(t) is expressed as

Then, V
IF
(t) is expressed as

V
RF
(t) = R
L
(I
0
+ G
m
V
IF
)
( )
IF L DC m RF RF LO
4
V (t) R I g A Cos( t) Cos( t) = + e e
t
m L RF m L RF
IF DC L LO LO RF LO RF
4 2g R A 2G R A
V (t) I R Cos( t) Cos( t) Cos( t) = e + e + e + e e
t t t
With the first harmonic LO mixing, the fundamental component of S(t) is considered.
m L
v
2g R
A =
t
Gain: Disadvantage:
LO feedthrough
S(t)
t
+1
-1
1/F
LO
Double Balanced Mixer Gilbert Mixer
Strong LO-IF feed suppressed by double balanced mixer.
All the even harmonics cancelled.
All the odd harmonics doubled (including the signal).
+V
LO
R
L
R
L
V
LO
M2 M3
+V
RF
+V
LO
M2 M3
V
RF
V
OUT
I I
DC RF
+ I I
DC RF
Mixer
31
Mixer
Z
e
Z
e
LO+
LO-
LO+
R
L
Q
4 Q
3
Q
1
Q
2
Q
5
Q
6
V
IF+
V
IF-
V
RF+
V
RF-
R
L
V
DD
2I
0
IF
1 0 m
V
I = I + G
2
IF
2 0 m
V
I = I -G
2
Double Balanced Mixer Gilbert Mixer
IF
1 0 m
V
I =I +G
2
IF
2 0 m
V
I =I -G
2
IF L 2 1 m L RF
V R (I -I ) g R V = =
, V
LO
> 0
IF L 1 2 m L RF
V R (I -I ) g R V = =
, V
LO
< 0
RF m L IF
V (t) G R V (t)S(t) =
RF m L IF IF LO
4
V (t) G R A Cos( t)Cos( t) = e e
t
m L IF m L IF
RF LO IF LO IF
2G R A 2G R A
V (t) Cos( t) Cos( t) = e + e + e e
t t
32
Oscillator
Introduction
RF and microwave oscillators provide signal sources for frequency
conversion and carrier generation.
A solid-state oscillator uses an active nonlinear device, such as a diode
or transistor, in conjunction with a passive circuit to convert DC to a
sinusoidal steady-state RF signal.
Diodes or transistors are biased to provide a negative resistance then are
used with resonators using cavity, transmission line, or dielectric to
produce oscillations.
Frequency multipliers, in conjunction with a lower frequency source,
can be used to produce power at millimeter wave frequencies.
Because of the requirement of a nonlinear active device, the rigorous
analysis and design of oscillator circuits can be difficult, and is usually
carried out today with sophisticated CAD tools.
At startup, oscillation is triggered by transient or noise and then it
reaches a stable oscillation state.
33
Oscillator
Introduction
Important considerations for oscillators used in RF and
microwave systems :
Tuning range (specified in MHz/V for voltage-tuned
oscillators)
Frequency stability (specified in PPM/C) ppm: parts-
per million, typical 2 ~ 0.5 PPM/oC
Phase noise (specified in dBc/Hz below carrier, offset
from carrier), typical 80 ~ -110 dBc/Hz @ 10 KHz offset
Harmonics (specified in dBc below carrier)
34
Oscillator
Various types of RF oscillators: Hartley, Colpitts, Clapp, and
Pierce, using transistor and a feed back network.
Focus on MICROWAVE OSCILLATORS
35
Oscillator
36
Oscillator
37
Oscillator
The process of oscillation is critically dependent on the nonlinear behavior of Zin, as follows.
38
Oscillator
Oscillation stability requires that any variation in current or frequency will be
damped out, allowing the oscillator to return to its original state.
39
Oscillator
40
Oscillator
41
Oscillator
42
Oscillator
43
Oscillator
44
Oscillator
45
Oscillator
46
Oscillator
47
Oscillator
48
Oscillator
49
Oscillator
50
Oscillator
51
Oscillator
52
Oscillator
53
Oscillator

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Cuong Huynh Telecommunications DepartmentHCMUT

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