VNB35NV04 / VNP35NV04

/ VNV35NV04 / VNW35NV04

OMNIFET II:
FULLY AUTOPROTECTED POWER MOSFET
TYPE
VNB35NV04
VNP35NV04
VNV35NV04

RDS(on)

Ilim

Vclamp

10 m (*)

30 A

40 V

10

VNW35NV04

PowerSO-10

D2PAK

(*) For PowerSO-10 only

n LINEAR CURRENT LIMITATION

n THERMAL SHUT DOWN
n SHORT CIRCUIT PROTECTION
n INTEGRATED CLAMP
n LOW CURRENT DRAWN FROM INPUT PIN
n DIAGNOSTIC FEEDBACK THROUGH INPUT

PIN

n ESD PROTECTION

3
1

TO-220

TO-247
ORDER CODES:
VNB35NV04
VNP35NV04
VNV35NV04
VNW35NV04

D2PAK
TO-220
PowerSO-10
TO-247

n DIRECT ACCESS TO THE GATE OF THE

POWER MOSFET (ANALOG DRIVING)

n COMPATIBLE WITH STANDARD POWER

MOSFET

DESCRIPTION
The VNB35NV04, VNP35NV04, VNV35NV04,
VNW35NV04 are monolithic devices designed in
STMicroelectronics VIPower M0-3 Technology,

intended for replacement of standard Power

MOSFETS from DC up to 25KHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments. Fault feedback can be detected by
monitoring the voltage at the input pin.

BLOCK DIAGRAM
DRAIN

2
Overvoltage
Clamp

INPUT

Gate
Control

Over
Temperature

Linear
Current
Limiter

3
SOURCE

July 2003

FC01000

1/19

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

ABSOLUTE MAXIMUM RATING
Symbol

Parameter

VDS
VIN
IIN
RIN MIN
ID
IR
VESD1

Drain-source Voltage (VIN=0V)

Input Voltage
Input Current
Minimum Input Series Impedance
Drain Current
Reverse DC Output Current
Electrostatic Discharge (R=1.5K, C=100pF)
Electrostatic Discharge on output pin only
(R=330, C=150pF)
Total Dissipation at Tc=25C
Operating Junction Temperature
Case Operating Temperature
Storage Temperature

VESD2
Ptot
Tj
Tc
Tstg

PowerSO-10

Value
D2PAK
TO-220
Internally Clamped
Internally Clamped
+/-20
4.7
Internally Limited
-30
4000

Unit
TO-247
V
V
mA

A
A
V

16500
125

125
125
Internally limited
Internally limited
-55 to 150

V
208

CONNECTION DIAGRAM (TOP VIEW)

SOURCE
SOURCE
N.C.
SOURCE
SOURCE

5
4
3

6
7
8
9
10

INPUT
INPUT
INPUT
INPUT
INPUT

2
1
11

DRAIN
(*) For the pins configuration related to TO-220, TO-247, D2PAK, see outlines at page 1.

CURRENT AND VOLTAGE CONVENTIONS

ID

DRAIN
IIN

RIN
INPUT
SOURCE

VIN

2/19

VDS

W
C
C
C

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

THERMAL DATA
Symbol
Rthj-case
Rthj-amb
(*) When

Parameter

PowerSO-10
Thermal Resistance Junction-case}}} MAX
1
Thermal Resistance Junction-ambient MAX
50(*)

Value
D2PAK
1
50(*)

TO-220
1
50

TO-247
0.6
30

Unit
C/W
C/W

mounted on a standard single-sided FR4 board with 50mm2 of Cu (at least 35 m thick) connected to all DRAIN pins.

ELECTRICAL CHARACTERISTICS (-40C < Tj < 150C, unless otherwise specified)

OFF
Symbol
VCLAMP
VCLTH
VINTH
IISS
VINCL

Parameter
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input Threshold Voltage
Supply Current from Input
Pin
Input-Source Clamp
Voltage

IDSS

Zero Input Voltage Drain

Current (VIN=0V)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

VIN=0V; ID=15A

40

45

55

VIN=0V; ID=2mA

36

VDS=VIN; ID=1mA

0.5

V
2.5

VDS=0V; VIN=5V

150

100

IIN=1mA

IIN=-1mA
VDS=13V; VIN=0V; Tj=25C

V
A

6.8

-1.0

-0.3
30

VDS=25V; VIN=0V

75

V
A

ON
Max

RDS(on)

Static Drain-source On
Resistance

Test Conditions

PowerSO-10

D2PAK

VIN=5V; ID=15A; Tj=25C

10

TO-220 / TO-247
13

VIN=5V; ID=15A; Tj=150C

20

24

Unit

3/19

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

ELECTRICAL CHARACTERISTICS (continued) (Tj=25C, unless otherwise specified)
DYNAMIC
Symbol
gfs (*)
COSS

Parameter
Forward
Transconductance
Output Capacitance

Test Conditions

Min

VDD=13V; ID=15A

Typ

Max

Unit

35
1300

VDS=13V; f=1MHz; VIN=0V

S
pF

SWITCHING
Symbol
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf

Parameter
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

(di/dt)on

Turn-on Current Slope

Qi

Total Input Charge

Test Conditions

Min

VDD=15V; ID=15A
Vgen=5V; Rgen=RIN MIN=4.7
(see figure 1)
VDD=15V; ID=15A
Vgen=5V; Rgen=2.2K
(see figure 1)
VDD=15V; ID=15A

Typ
150
840
980
600
4
27
34
31

Max
500
2500
3000
1500
12
100
120
110

Unit
ns
ns
ns
ns
s
s
s
s

18

Igen =2.13mA (see figure 5)

A/s

118

Vgen=5V; Rgen=RIN MIN=4.7

VDD=12V; ID=15A; VIN=5V

nC

SOURCE DRAIN DIODE

Symbol
VSD (*)
trr
Qrr
IRRM

Parameter
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge

Test Conditions
ISD=15A; VIN=0V
ISD=15A; dI/dt=100A/s

Min

VDD=30V; L=200H
Reverse Recovery Current (see test circuit, figure 2)

Typ
0.8
400
1.4

Max

Unit
V
ns
C
A

PROTECTIONS (-40C < Tj < 150C, unless otherwise specified)

Symbol
Ilim
tdlim
Tjsh
Tjrs
Igf
Eas

Parameter
Drain Current Limit
Step Response Current
Limit

Test Conditions
VIN=6V; VDS=13V
VIN=6V; VDS=13V

Overtemperature
Shutdown
Overtemperature Reset
Fault Sink Current
Single Pulse
Avalanche Energy

Typ
45

Max
60

Unit
A
s

50
150

VIN=5V; VDS=13V; Tj=Tjsh

starting Tj=25C; VDD=24V
VIN=5V; Rgen=RIN MIN=4.7; L=24mH
(see figures 3 & 4)

(*) Pulsed: Pulse duration = 300s, duty cycle 1.5%

4/19

Min
30

175

200

135
10

15

20

C
mA

1.7

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

PROTECTION FEATURES
During normal operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET through a low impedance path.
The device then behaves like a standard power
MOSFET and can be used as a switch from DC up
to 25KHz. The only difference from the users
standpoint is that a small DC current IISS (typ.
100A) flows into the INPUT pin in order to supply
the internal circuitry.
The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:
internally set at 45V, along with the rugged
avalanche characteristics of the Power MOSFET
stage give this device unrivalled ruggedness and
energy handling capability. This feature is mainly
important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT:
limits the drain current ID to Ilim whatever the
INPUT pin voltages is. When the current limiter is
active, the device operates in the linear region, so
power dissipation may exceed the capability of the
heatsink. Both case and junction temperatures
increase, and if this phase lasts long enough,
junction
temperature
may
reach
the
overtemperature threshold Tjsh.

- OVERTEMPERATURE AND SHORT CIRCUIT

PROTECTION:
these are based on sensing the chip temperature
and are not dependent on the input voltage. The
location of the sensing element on the chip in the
power stage area ensures fast, accurate detection
of the junction temperature. Overtemperature
cutout occurs in the range 150 to 190 C, a typical
value being 170 C. The device is automatically
restarted when the chip temperature falls of about
15C below shut-down temperature.
- STATUS FEEDBACK:
in the case of an overtemperature fault condition
(Tj > Tjsh), the device tries to sink a diagnostic
current Igf through the INPUT pin in order to
indicate fault condition. If driven from a low
impedance source, this current may be used in
order to warn the control circuit of a device
shutdown. If the drive impedance is high enough
so that the INPUT pin driver is not able to supply
the current Igf, the INPUT pin will fall to 0V. This
will not however affect the device operation:
no requirement is put on the current capability
of the INPUT pin driver except to be able to
supply the normal operation drive current IISS.
Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit.

5/19

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

Fig.1: Switching Time Test Circuit for Resistive Load

VD
Rgen
Vgen

ID
90%

tr

tf

10%

t
Vgen

td(on)

td(off)

t
Fig.2: Test Circuit for Diode Recovery Times

D
I

FAST
DIODE

OMNIFET
S

L=100uH
B

25
D

Rgen

Vgen

VDD
I

OMNIFET
S

8.5

6/19

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

Fig. 3: Unclamped Inductive Load Test Circuits

Fig. 4: Unclamped Inductive Waveforms

RGEN
VIN
PW

Fig. 5: Input Charge Test Circuit

VIN

Fig 6 : Thermal Impedance for TO-220

GEN

ND8003

Fig. 7:Thermal Impedance for TO-247

7/19

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

Source-Drain Diode Forward Characteristics

Static Drain Source On Resistance

Vsd (mV)

Rds(on) (mOhm)

950

50

Vin=2.5V

900

Vin=0V

Tj=-40C

40

850
Tj=25C

800

Tj=150C

30

750
20
700

650

10
0

10

15

20

25

30

35

Id (A)

Id (A)

PowerSO-10 Static Drain-Source On resistance Vs.

Input Voltage

D2PAK, TO-220 & TO-247 Static Drain-Source On

resistance Vs. Input Voltage

Rds(on) (mOhm)

Rds(on) (mOhm)

27.5

30

25

Id=15A
Id=7.5A

25

22.5

Tj=150C
Id=15A
Id=7.5A

20

20
Id=15A
Id=7.5A

17.5

Tj=150C

15
15

Tj=25C

Id=15A
Id=7.5A

Id=15A
Id=7.5A
Id=15A
Id=7.5A

10

12.5
Tj=25C

Tj=-40C

10
5
7.5
Tj=-40C

5
2

2.5

3.5

4.5

5.5

2.5

6.5

3.5

4.5

5.5

6.5

Vin (V)

Vin (V)

PowerSO-10 Static Drain-Source On Resistance

Vs. Id

D2PAK, TO-220 & TO-247 Static Drain-Source On

Resistance Vs. Id

Rds(on) (mOhm)

Rds(on) (mOhm)

30

24
21

25

Tj=150C

18

Vin=5V
20

15

Tj=150C

12

15

Tj=25C
9
10

Tj=-40C

Tj=25C
Tj=-40C

Vin=5V

3
0

0
0

10

15

20

Id (A)

8/19

25

30

35

12

16

Id (A)

20

24

28

32

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

Transconductance

Transfer Characteristics

Gfs (S)

Idon (A)

54

50

Tj=-40C

45

48

Vds=13V

Vds=13.5V

Tj=25C

36

40

Tj=150C

42

35

Tj=-40C

30
30

Tj=150C
25

24
20
18
15

Tj=25C

12

10

0
0

12

16

20

24

28

32

1.5

2.5

Id (A)

3.5

4.5

5.5

6.5

Vin (V)

Output Characteristics

Normalized On Resistance Vs. Temperature

Rds(on) (mOhm)

Id (A)

55
50

3.5

Vin=4V

45

Vin=4.5V

Vin=3.5V

Vin=5V
Id=15A

40

Vin=3V

2.5

35
30

25
1.5

20
15

Vin=2.5V
10
0.5

5
0

0
0

0.25

0.5

0.75

1.25

1.5

1.75

2.25

2.5

-50

-25

25

50

75

100

125

150

175

Tc (C)

Vds (V)

Turn On Current Slope

Turn On Current Slope

di/dt (A/us)

di/dt (A/us)

10

20

17.5
15

Vin=3.5V
Vdd=15V
Id=15A

Vin=5V
Vdd=15V
Id=15A

12.5

6
5

10

7.5

3
5
2
2.5

1
0

0
0

150

300

450

600

Rg (Ohm)

750

900

1050

125

250

375

500

625

750

875

1000 1125

Rg (Ohm)

9/19

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

Turn off drain source voltage slope

Input Voltage Vs. Input Charge

Vin (V)

dV/dt (V/us)

160
140

Vds=12V
Id=15A

Vin=5V
Vdd=15V
Id=15A

120

100

80

60

40

20
0

0
0

25

50

75

100

125

150

175

150

300

450

600

750

900

1050

Rg (Ohm)

Qg (nC)

Switching Time Resistive Load

Turn Off Drain-Source Voltage Slope

dV/dt (V/us)

T (us)

160

40

td(off)

35

140

Vin=3.5V
Vdd=15V
Id=15A

120

Vdd=15V
Id=15A
Rg=4.7ohm

30

100

20

60

15

40

10

20

tr

25

80

tf

td(on)

0
0

150

300

450

600

750

900

1050

300

600

900

1200

1500

1800

2100

2400

Rg (Ohm)

Rg (Ohm)

Normalized Input Threshold Voltage Vs.

Temperature

Switching Time Resistive Load

Vinth (V)

T (ns)

1750

Vdd=15V
Id=15A
Rg=4.7ohm

tr

1500

1.75

1250

Vds=Vin
Id=1mA

1.5

td(off)

1.25
1000
1
750
0.75

tf
500

0.5

250

td(on)

0
3

3.5

4.5

Vin (V)

10/19

0.25

5.5

6.5

-50

-25

25

50

75

Tc (C)

100

125

150

175

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

Current Limit Vs. Junction Temperature

Step Response Current Limit

Ilim (A)

Tdlim (us)

100

180

90

Vin=6V
Vds=13V

80

160

Vin=6V
140

70
60

120

50
100

40
30

80

20
60
10
40

0
-50

-25

25

50

75

Tc (C)

100

125

150

175

10

15

20

25

30

35

Vdd (V)

Derating Curve

11/19

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

TO-220 MECHANICAL DATA

mm.

inch

DIM.
MIN.

TYP

MAX.

MIN.

TYP.

MAX.

4.40

4.60

0.173

0.181

1.23

1.32

0.048

0.051

2.40

2.72

0.094

0.107

0.49

0.70

0.019

0.027

0.61

0.88

0.024

0.034

F1

1.14

1.70

0.044

0.067

F2

1.14

1.70

0.044

0.067

4.95

5.15

0.194

0.203

G1

2.4

2.7

0.094

0.106

H2

10.0

10.40

0.393

0.409

L2

16.4

0.645

L4

13.0

14.0

0.511

0.551

L5

2.65

2.95

0.104

0.116

L6

15.25

15.75

0.600

0.620

L7

6.2

6.6

0.244

0.260

L9

3.5

3.93

0.137

M
DIA.

0.154

2.6

0.102

3.75

3.85

0.147

0.151


.

'

&


.

.


.


.


.

8


*

KC
&


)
(

8


(

(

.

12/19


*

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

TO-247 MECHANICAL DATA

DIM.

mm.
MIN.

TYP

inch
MAX.

MIN.

TYP.

MAX.

4.7

5.3

0.185

0.209

2.2

2.6

0.087

0.102

0.4

0.8

0.016

0.031

1.4

0.039

0.055

F3

2.4

0.079

0.094

F4

3.4

0.118

10.9

0.134
0.429

15.3

15.9

0.602

0.626

19.7

20.3

0.776

0.779

L3

14.2

14.8

0.559

0.582

L4

34.6

1.362

L5

5.5

0.217

0.079

0.118

Dia.

3.55

3.65

0.140

0.144

13/19

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

PowerSO-10 MECHANICAL DATA

mm.

DIM.

MIN.

A
A (*)
A1
B
B (*)
C
C (*)
D
D1
E
E2
E2 (*)
E4
E4 (*)
e
F
F (*)
H
H (*)
h
L
L (*)

(*)

inch

TYP

MAX.

MIN.

3.65
3.6
0.10
0.60
0.53
0.55
0.32
9.60
7.60
9.50
7.60
7.50
6.10
6.30

0.132
0.134
0.000
0.016
0.014
0.013
0.009
0.370
0.291
0.366
0.283
0.287
0.232
0.232

1.35
1.40
14.40
14.35

0.049
0.047
0.543
0.545

1.80
1.10
8
8

3.35
3.4
0.00
0.40
0.37
0.35
0.23
9.40
7.40
9.30
7.20
7.30
5.90
5.90

0.047
0.031
0
2

1.27

TYP.

MAX.
0.144
0.142
0.004
0.024
0.021
0.022
0.0126
0.378
0.300
0.374
300
0.295
0.240
0.248

0.050

1.25
1.20
13.80
13.85
0.50

0.053
0.055
0.567
0.565
0.002

1.20
0.80
0
2

0.070
0.043
8
8

(*) Muar only POA P013P

0.10 A B

10

E2

SEATING
PLANE
e

DETAIL "A"

0.25

E4

D
= D1 =
=
=
SEATING
PLANE

A
F

A1

A1

L
DETAIL "A"

P095A

14/19

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

D2PAK MECHANICAL DATA

DIM.

mm.
MIN.

TYP

MAX.

4.4

4.6

A1

2.49

2.69

A2

0.03

0.23

0.7

0.93

B2

1.14

1.7

0.45

0.6

C2

1.23

1.36

8.95

D1
E

10

E1
G

9.35
8
10.4
8.5

4.88

5.28

15

15.85

L2

1.27

1.4

L3

1.4

1.75

2.4

3.2

R
V2

0.4
0

P011P6

15/19

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

TO-220 TUBE SHIPMENT (no suffix)

Base Q.ty
Bulk Q.ty
Tube length ( 0.5)
A
B
C ( 0.1)

All dimensions are in mm.

16/19

50
1000
532
5.5
31.4
0.75

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

PowerSO-10 SUGGESTED PAD LAYOUT

TUBE SHIPMENT (no suffix)

14.6 - 14.9

CASABLANCA

10.8- 11

MUAR

6.30
C

A
A

0.67 - 0.73
10
9

9.5

2
3

0.54 - 0.6

All dimensions are in mm.

8
7

4
5

1.27

Base Q.ty Bulk Q.ty Tube length ( 0.5)

Casablanca
Muar

50
50

1000
1000

532
532

C ( 0.1)

10.4 16.4
4.9 17.2

0.8
0.8

TAPE AND REEL SHIPMENT (suffix 13TR)

REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C ( 0.2)
F
G (+ 2 / -0)
N (min)
T (max)

600
600
330
1.5
13
20.2
24.4
60
30.4

All dimensions are in mm.

TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing

W
P0 ( 0.1)
P
D ( 0.1/-0)
D1 (min)
F ( 0.05)
K (max)
P1 ( 0.1)

All dimensions are in mm.

24
4
24
1.5
1.5
11.5
6.5
2
End

Start
Top

No components

Components

No components

cover
tape

500mm min
Empty components pockets
saled with cover tape.

500mm min

User direction of feed

17/19

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

D2PAK FOOTPRINT

TUBE SHIPMENT (no suffix)

A

16.90

12.20

5.08
1.60

3.50
9.75

All dimensions
are in millimeters

Base Q.ty
Bulk Q.ty
Tube length ( 0.5)
A
B
C ( 0.1)

50
500
532
6
21.3
0.6

All dimensions are in mm.

TAPE AND REEL SHIPMENT (suffix 13TR)

REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C ( 0.2)
F
G (+ 2 / -0)
N (min)
T (max)

1000
1000
330
1.5
13
20.2
24.4
60
30.4

All dimensions are in mm.

TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing

W
P0 ( 0.1)
P
D ( 0.1/-0)
D1 (min)
F ( 0.05)
K (max)
P1 ( 0.1)

All dimensions are in mm.

24
4
16
1.5
1.5
11.5
6.5
2
End

Start
Top

No components

Components

No components

cover
tape

500mm min
Empty components pockets
saled with cover tape.
User direction of feed

18/19

500mm min

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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19/19