IRLML0100PbF-1

HEXFET Power MOSFET

VDS

100
220

ID
(@TA = 25C)

nC

1.6

Qg (typical)

2.5

RDS(on) max
(@VGS = 10V)

G 1
3 D
S

Features
Industry-standard pinout SOT-23 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification

Base Part Number

Package Type

IRLML0100TRPbF-1

Micro3 (SOT-23)

Micro3TM (SOT-23)

Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability

Standard Pack
Form
Quantity
Tape and Reel
3000

Orderable Part Number

IRLML0100TRPbF-1

Absolute Maximum Ratings

Max.

Units

VDS

Symbol

Drain-Source Voltage

Parameter

100

ID @ TA = 25C

Continuous Drain Current, VGS @ 10V

1.6

ID @ TA = 70C

Continuous Drain Current, VGS @ 10V

1.3

IDM

Pulsed Drain Current

7.0

PD @TA = 25C

Maximum Power Dissipation

1.3

PD @TA = 70C

Maximum Power Dissipation

0.8

Linear Derating Factor

0.01

VGS

Gate-to-Source Voltage

16

TJ, TSTG

Junction and Storage Temperature Range

-55 to + 150

W
W/C

Thermal Resistance
Symbol

Parameter

RJA

Junction-to-Ambient

RJA

Junction-to-Ambient (t<10s)

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Typ.

Max.

100

99

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Units
C/W

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Electric Characteristics @ TJ = 25C (unless otherwise specified)

Symbol
V(BR)DSS

Parameter
Drain-to-Source Breakdown Voltage

Min. Typ. Max. Units

100

0.10

190

235

178

220

1.0

2.5

20

250

Gate-to-Source Forward Leakage

100

Gate-to-Source Reverse Leakage

-100

RG

Internal Gate Resistance

1.3

Forward Transconductance

5.7

Qg

Total Gate Charge

2.5

Conditions

gfs

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)

Gate Threshold Voltage

IDSS
IGSS

Drain-to-Source Leakage Current

VGS = 0V, ID = 250A

V/C Reference to 25C, ID = 1mA

m
V
A
nA

d
d

VGS = 4.5V, ID = 1.3A

VGS = 10V, ID = 1.6A
VDS = VGS, ID = 25A
VDS =100V, VGS = 0V

VDS = 100V, VGS = 0V, TJ = 125C

VGS = 16V
VGS = -16V
VDS = 50V, ID = 1.6A
ID = 1.6A

nC

Qgs

Gate-to-Source Charge

0.5

Qgd

Gate-to-Drain ("Miller") Charge

1.2

VGS = 4.5V

td(on)

Turn-On Delay Time

2.2

VDD =50V

tr

Rise Time

2.1

td(off)

Turn-Off Delay Time

9.0

tf

Fall Time

3.6

VGS = 4.5V

Ciss

Input Capacitance

290

VGS = 0V

Coss

Output Capacitance

27

Crss

Reverse Transfer Capacitance

13

ns

pF

VDS =50V

d
d

ID = 1.0A
RG = 6.8

VDS = 25V
= 1.0MHz

Source - Drain Ratings and Characteristics

Symbol
IS

Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current

ISM

(Body Diode)

Min. Typ. Max. Units

1.1
A

Conditions
MOSFET symbol

7.0

showing the
integral reverse
p-n junction diode.

TJ = 25C, IS = 1.1A, VGS = 0V

VSD

Diode Forward Voltage

1.3

trr

Reverse Recovery Time

20

30

ns

TJ = 25C, VR = 50V, IF=1.1A

Qrr

Reverse Recovery Charge

13

20

nC

di/dt = 100A/s

Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400s; duty cycle 2%.
Surface mounted on 1 in square Cu board
Refer to application note #AN-994.

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100

100
TOP

10
BOTTOM

60s PULSE WIDTH

Tj = 150C

VGS
10.0V
4.50V
3.50V
3.30V
3.25V
2.50V
2.35V
2.25V

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

60s PULSE WIDTH

Tj = 25C

0.1

TOP

10
BOTTOM

VGS
10.0V
4.50V
3.50V
3.30V
3.25V
2.50V
2.35V
2.25V

1
2.25V

2.25V
0.01

0.1

0.1

10

100

0.1

VDS, Drain-to-Source Voltage (V)

10

100

2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)

ID, Drain-to-Source Current(A)

10

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

TJ = 150C

0.1

TJ = 25C

VDS = 50V
60s PULSE WIDTH

0.01

ID = 1.6A
VGS = 10V
2.0

1.5

1.0

0.5
1.5

2.0

2.5

3.0

3.5

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

3

VDS, Drain-to-Source Voltage (V)

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-60 -40 -20 0

20 40 60 80 100 120 140 160

TJ , Junction Temperature (C)

Fig 4. Normalized On-Resistance

Vs. Temperature
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10000

VGS, Gate-to-Source Voltage (V)

Coss = Cds + Cgd

1000
C, Capacitance (pF)

16

VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd

Ciss
100

Coss
Crss

10

ID= 1.6A
12

1
1

10

100

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

ID, Drain-to-Source Current (A)

100

10
TJ = 150C
1

0.1

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

ISD, Reverse Drain Current (A)

QG Total Gate Charge (nC)

VDS , Drain-to-Source Voltage (V)

TJ = 25C

OPERATION IN THIS AREA

LIMITED BY R DS (on)

10
100sec
1

1msec

0.1

TA = 25C
Tj = 150C
Single Pulse

VGS = 0V

10msec

0.01

0.01
0.4

0.6

0.8

VSD , Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage
4

VDS= 80V
VDS= 50V
VDS= 20V

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1.0

0.1

10

VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

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100

IRLML0100PbF-1

2.0

RD

V DS

ID , Drain Current (A)

VGS
1.5

D.U.T.

RG

- VDD

VGS

1.0

Pulse Width 1 s
Duty Factor 0.1 %

Fig 10a. Switching Time Test Circuit

0.5

VDS
90%

0.0
25

50

75

100

125

150

TA , Ambient Temperature (C)

10%
VGS

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

td(on)

tr

t d(off)

tf

Fig 10b. Switching Time Waveforms

Thermal Response ( ZthJA )

1000

100

D = 0.50
0.20
0.10
0.05

10

0.02
0.01

0.1

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient

5

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10

600

(
RDS(on), Drain-to -Source On Resistance m)

)
RDS(on), Drain-to -Source On Resistance (m

IRLML0100PbF-1

ID = 1.6A

550
500
450
400

TJ = 125C

350
300
250

TJ = 25C

200
150
2

10

270

250
Vgs = 4.5V
230
Vgs = 10V

210

190

170
0

ID, Drain Current (A)

VGS, Gate -to -Source Voltage (V)

Fig 13. Typical On-Resistance Vs. Drain

Current

Fig 12. Typical On-Resistance Vs. Gate

Voltage

Id
Vds
Vgs

Vgs(th)

Qgodr

Qgd

20K
1K

VCC

Qgs2 Qgs1

Fig 14a. Basic Gate Charge Waveform

6

DUT

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Fig 14b. Gate Charge Test Circuit

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100

80

2.0

Power (W)

VGS(th), Gate threshold Voltage (V)

2.5

1.5
ID = 25uA

60

40

ID = 250uA
1.0

20

0.5
-75 -50 -25

25

50

75 100 125 150

1E-005 0.0001

0.001

Fig 15. Typical Threshold Voltage Vs.

Junction Temperature

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0.1

10

Time (sec)

TJ , Temperature ( C )

0.01

Fig 16. Typical Power Vs. Time

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IRLML0100PbF-1
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
S
Y
M
B
O
L

ccc

C B A

MAX
1.12
0.10

MIN
.036
.0004

MAX
.044
.0039

0.88
0.30
0.08

1.02
0.50
0.20

.035
.0119
.0032

.040
.0196
.0078

D
E
E1
e

3
1

MIN
0.89
0.01

A2
b
c

E1

INCHES

A
A1

2.80
2.10
1.20

3.04
2.64
1.40

.111
.083
.048

.119
.103
.055

e1
L

0.95 BSC
1.90 BSC
0.40
0.60

L1
L2
0
a
aa

0.25 BS C
0.54 REF
0
8
0.10

.0118 BSC
.021 RE F
0
8
.004

bbb
ccc

0.20
0.15

L2

A
A1
A2
b
c

.0375 BSC
.075 BSC
.0158
.0236

.008
.006

e
e1

S
Y
M
B
O
L

DIME NS IONS
MIL LIME TE RS

D
E
E1
e

2
A A

L1
3X b

A1

bbb

aa C
a

3 S URF

C B A

RECOMMENDED FOOT PRINT

3X L

LEAD ASS IGNMENT

1. GAT E
2. S OURCE

3X

0.972
[.038]

3. DRAIN
2.742
[.1079]

3X
0.95
[.0375]

0.802
[.031]

NOT E S
1. DIME NSIONING AND T OLE RANCING PER AS ME Y14.5M-1994.
2. DIMENSIONS ARE SH OWN IN MILLIME T E RS [INCHES ]
3. CONT ROLLING DIME NSION: MIL LIME T E R.

1.90
[.075]

4 DAT UM PLANE H IS LOCAT ED AT T HE MOLD PART ING LINE.

5 DAT UM A AND B T O BE DET ER MINE D AT DAT UM PLANE H .

e1
L
L1
L2
0
aaa
bbb
ccc

DIMENSIONS
MILLIMET ERS
MAX
MIN
0.89
1.12
0.01
0.10
0.88
1.02
0.50
0.30
0.08
0.20
2.80
3.04
2.10
2.64
1.20
1.40
0.95 BS C
1.90 BS C
0.40
0.60
0.25 BS C
0.54 REF
0
8
0.10
0.20
0.15

INCHES
MIN
MAX
.036
.044
.0004
.0039
.035
.040
.0119
.0196
.0032
.0078
.111
.119
.083
.103
.048
.055
.0375 BS C
.075 BSC
.0158
.0236
.0118 BS C
.021 REF
0
8
.004
.008
.006

6 DIME NSIONS D AND E1 ARE ME ASURE D AT DAT UM PLANE H .

DIMENS IONS DOES NOT INCL UDE MOLD PROT RUS IONS OR
INT E RLE AD F L AS H. MOLD PROT RUS ION OR INT ER LEAD F LASH
S HALL NOT EXCE ED 0.25 MM [.010 INCH] PER SIDE.
7 DIME NSION L IS T H E LE AD LE NGT H F OR S OL DERING T O A SUBS T RAT E .
8. OUT LINE CONF ORMS T O JEDE C OUT LINE T O-236AB.

Micro3 (SOT-23 / TO-236AB) Part Marking Information

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRLML0100PbF-1
Micro3 Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )

1.6 ( .062 )
1.5 ( .060 )

TR

FEED DIRECTION

1.32 ( .051 )
1.12 ( .045 )

1.85 ( .072 )
1.65 ( .065 )

4.1 ( .161 )
3.9 ( .154 )

3.55 ( .139 )
3.45 ( .136 )

4.1 ( .161 )
3.9 ( .154 )

8.3 ( .326 )
7.9 ( .312 )

0.35 ( .013 )
0.25 ( .010 )

1.1 ( .043 )
0.9 ( .036 )

178.00
( 7.008 )
MAX.

9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package

Qualification information
Qualification level
Moisture Sensitivity Level

Industrial
(per JE DEC JE S D47F
Micro3 (SOT-23)

RoHS compliant

guidelines)
MS L1

(per JE DE C J-S TD-020D )

Yes

Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability

Applicable version of JEDEC standard at the time of product release

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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