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NPN
Darlington Complementary
Silicon Power Transistors
BDX33B
BDX33C*
PNP
BDX34B
*
BDX34C
DARLINGTON
10 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80100 VOLTS
70 WATTS
MAXIMUM RATINGS
Symbol
BDX33B
BDX34B
BDX33C
BDX34C
Unit
VCEO
80
100
Vdc
CollectorBase Voltage
VCB
80
100
Vdc
EmitterBase Voltage
Rating
CollectorEmitter Voltage
VEB
5.0
Vdc
IC
10
15
Adc
Base Current
IB
0.25
Adc
PD
TJ, Tstg
70
0.56
Watts
W/C
65 to +150
C
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
3
CASE 221A09
TO220AB
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
RJC
1.78
C/W
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
80
60
40
20
20
40
60
80
100
120
TC, CASE TEMPERATURE (C)
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2
140
160
Symbol
Min
Max
Unit
80
100
80
100
80
100
0.5
10
1.0
5.0
IEBO
10
mAdc
hFE
750
VCE(sat)
2.5
Vdc
VBE(on)
2.5
Vdc
VF
4.0
Vdc
OFF CHARACTERISTICS
VCEO(sus)
BDX33B/BDX34B
BDX33C/BDX34C
VCER(sus)
BDX33B/BDX34B
BDX33C/BDX33C
Vdc
VCEX(sus)
BDX33B/BDX34B
BDX33C/BDX34C
Vdc
ICEO
TC = 25C
TC = 100C
mAdc
ICBO
TC = 25C
TC = 100C
ON CHARACTERISTICS
DC Current Gain1
(IC = 3.0 Adc, VCE = 3.0 Vdc)
Vdc
mAdc
BaseEmitter On Voltage
(IC = 3.0 Adc, VCE = 3.0 Vdc)
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3
D = 0.5
0.3
0.2
0.2
0.1
P(pk)
0.05
0.1
0.07
0.05
0.02
t1
0.03
0.01
0.02
0.01
0.01
0.02 0.03
SINGLE PULSE
SINGLE
PULSE
t2
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
20
30
100
200 300
500
1000
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
1.0
TC = 25C
5.0 ms
1.0 ms
500 s
20
100
s
IC, COLLECTOR CURRENT (AMP)
20
dc
5.0
2.0
1.0
0.5
0.2
0.1
TC = 25C
0.02
1.0
70 100
100
s
dc
BDX33B
BDX33C
2.0 3.0
5.0 7.0
10
20 30
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
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5.0 ms
1.0 ms
500 s
0.05
BDX34B
BDX34C
2.0 3.0
5.0 7.0
10
20 30
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
70 100
300
TJ = 25C
5000
3000
2000
200
C, CAPACITANCE (pF)
10,000
1000
500
300
200
TJ = 25C
VCE = 4.0 Vdc
IC = 3.0 Adc
100
50
30
20
10
2.0
5.0
Cib
70
50
PNP
NPN
1.0
Cob
100
10
20
50 100
f, FREQUENCY (kHz)
200
30
0.1
500 1000
PNP
NPN
0.2
0.5
1.0 2.0
5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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5
50
100
PNP
BDX34B, 34C
20,000
TJ = 150C
5000
3000
2000
25C
1000
-55C
5000
2000
300
200
300
200
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
25C
1000
500
0.2
TJ = 150C
3000
500
0.1
VCE = 4.0 V
10,000
hFE, DC CURRENT GAIN
10,000
hFE, DC CURRENT GAIN
20,000
VCE = 4.0 V
5.0 7.0 10
-55C
0.2 0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
0.1
5.0 7.0 10
3.0
TJ = 25C
2.6
IC = 2.0 A
4.0 A
6.0 A
2.2
1.8
1.4
1.0
0.3
2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
20
30
3.0
TJ = 25C
2.6
IC = 2.0 A
4.0 A
6.0 A
2.2
1.8
1.4
1.0
0.3
2.0 3.0
5.0 7.0
IB, BASE CURRENT (mA)
10
20
30
3.0
3.0
TJ = 25C
2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
TJ = 25C
2.0
VBE(sat) @ IC/IB = 250
1.5
1.0
0.5
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
2.5
2.0
1.5
1.0
0.5
10
0.2 0.3
0.5 0.7
1.0
2.0 3.0
Figure 7. On Voltages
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6
5.0 7.0
10
TO220AB
CASE 221A09
ISSUE AA
T
B
SEATING
PLANE
F
T
Q
1 2 3
H
K
Z
L
G
D
N
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
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7
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be
validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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8
BDX33B/D