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C. An 100 nm
thick lm deposited on TiO
2
substrate has a conductivity
9 10
8
Scm
1
. Compressed pellets had a higher conduc-
tivity of 4 10
6
Scm
1
. Presumably rapid electrolysis in-
troduces some dopant. In photoresponse measurements of
Fig. 2. FT-IR spectrum of the polythiocyanogen scraped off from a lm
deposited on conducting tin oxide glass (T = transmittance).
V.P.S. Perera et al. / Synthetic Metals 143 (2004) 283287 285
Fig. 3. MottSchottky plot for a lm of polythiocyanogen deposited on
conducting glass. Measurement frequency: (a) 1.5 kHz; (b) 1 kHz.
the lms an anodic signal was observed, suggesting n-type
behavior. Iodine doping increases the conductivity and the
sign of the photocurrent indicating p-type behavior. Exper-
iments with compressed pellets of polythiocyanogen have
also demonstrated an increase in conductivity of polythio-
cyanogen on doping with iodine and bromine [13]. Fig. 3
shows MottSchottky plots at 1.5 and 1 kHz for a lm of
polythiocyanogen deposited onto conducting glass. From
Fig. 3 the conduction band edge is positioned at 0.46 Vver-
sus standard calomel electrode (SCE). The positive slope of
the plots conrms n-type conductivity. Fig. 4 shows the opti-
cal absorption spectrum of the polythiocyanogen lm. From
Fig. 4 the band edge is found at 550 nm, corresponding to a
band gap of 2.25 eV. Fig. 5 compares the SEM pictures of
polythiocyanogen deposited onto a CTO surface and a bare
CTO surface. Structures other than the granulites in the CTO
surface are absent in the former indicating that the polymer
Fig. 5. SEM picture of (a) polythiocyanogen deposited on conducting tin oxide glass surface and (b) bare conducting tin oxide glass surface.
Fig. 4. Absorption spectrum of a lm of polythiocyanogen and photocur-
rent action spectrum of the cell n-TiO
2
/[SCN]
n
/p-CuI.
deposits as an uniform interconnected matrix free of pin
holes and large irregularities in thickness. Fig. 6 compares
SEM images of TiO
2
coated onto CTO glass with SEM im-
ages of polythiocyanogen deposited onto TiO
2
coated CTO
glass. It is obvious from Fig. 6 that the polymer lm fully
covers the rough surface of the nanocrystalline TiO
2
surface.
Comparison of the photocurrent action spectrum (plot
of IPCE = incident photon to photocurrent conversion
efciency versus wavelength) and the optical absorption
of the lm shows that the photocurrent originates from
the light absorbed by the lm. Fig. 7 shows the IV char-
acteristics of the photovoltaic cell n-TiO
2
/[SCN]
n
/p-CuI
at 1000 Wm
2
, 1.5 AM illumination. The short-circuit
photocurrent, open-circuit voltage and efciency being
2 mAcm
2
, 325 mV and 0.3%, respectively. Fig. 8 shows
a schematic diagram illustrating the positions of the con-
duction and valence bands of TiO
2
, [SCN]
n
and CuI. The
mechanism of the photovoltaic effect can be explained as
follows: photons absorbed by [SCN]
n
generate excitons
286 V.P.S. Perera et al. / Synthetic Metals 143 (2004) 283287
Fig. 6. SEM picture of (a) polythiocyanogen deposited on a nanocrystalline lm of TiO
2
and (b) bare nanocrystalline TiO
2
lm.
Fig. 7. IV characteristics of the cell n-TiO
2
/[SCN]
n
/p-CuI measured at
1000 Wm
2
, 1.5 AM illumination.
Fig. 8. Schematic energy level diagram showing band positions of TiO
2
,
[SCN]
n
and CuI.
which decomposes to electrons and holes at the interfaces
[SCN]
n
/TiO
2
and [SCN]
n
/CuI as the diffusion length of ex-
citons in a polymer is expected to be of the order of 10 nm,
it is unlikely that diffusion of excitons generated in the bulk
of the 100 nm lm of [SCN]
n
contribute signicantly to
the photocurrent. However, when the excitons are decom-
posed at the TiO
2
/[SCN]
n
, the position of the conduction
band of TiO
2
allows electron injection to n-TiO
2
. The hole
remaining in [SCN]
n
could diffuse to the [SCN]
n
/TiO
2
interface and pass onto CuI. Similarly, when excitons are
decomposed at the [SCN]
n
/CuI interface a hole is injected
to p-CuI and the electron remaining in [SCN]
n
diffuses
to the [SCN]
n
/TiO
2
interfaces and passes onto TiO
2
. The
rates of the above processes depend on the mobilities of
electrons and holes in [SCN]
n
. We have not succeeded in
measuring the mobilities of electrons and holes in [SCN]
n
.
The dark IV curve for the cell in the forward and re-
verse bias is presented in Fig. 9, rectication characteristics
needed for functioning as a photovoltaic device is evident.
On prolonged illumination, both short-circuit photocur-
rent and open-circuit voltage undergo a slow decay as is
found in other photovoltaic devices based on CuI [20]. On
Fig. 9. Dark rectication curve for the cell n-TiO
2
/[SCN]
n
/p-CuI.
V.P.S. Perera et al. / Synthetic Metals 143 (2004) 283287 287
replenishing the CuI overlayer (i.e. dissolution of original
layer in acetonitrile and deposition of new CuI layer), the
same photovoltaic response reappears indicating that there
is no hysteresis in the polymer lm. Decay of photocurrent
and open-circuit voltage, originate almost entirely from the
deterioration of CuI.
4. Conclusion
We have devised a method for deposition of thin lms
of the conducting polymer [SCN]
n
on conducting tin ox-
ide glass or other conducting substrate. Films are found be
highly resistant to chemical action and temperature. Again
the lms deposited by this method are uniform and largely
free of irregularities or pin holes. Films of [SCN]
n
were
also deposited on nanocrystalline TiO
2
lms and the hetero-
junction n-TiO
2
/[SCN]
n
/p-CuI demonstrated good photo-
voltaic response. We believe that further characterization and
other studies on thin lms of [SCN]
n
could lead to practical
applications.
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