EE682 – Group Project Design

Lecture #1 Power Switch Design

Prof. Ali Keyhani

Boost DC/DC Converter Design
 Power Switch Design
Boost Converter Review
1. Circuit topology

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 Power Switch Design
Boost Converter Review
2. Continuous conducting mode (CCM)

Current slope: VL/L

Where VL is inductor
voltage

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 Power Switch Design
Boost Converter Review
3. Discontinuous conducting mode (DCM)

Inductor current is not

continuous

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 Power Switch Design

Design Tasks

1. Power switch design

2. Inductor design
3. Capacitor design
4. Drive circuit

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 Power Switch Design
Design Specifications

1. Input voltage: 24 V
2. Output voltage: 48 V
3. Output power: 240 W
4. Inductor current ripple: 15 %
5. Capacitor voltage ripple: 0.1 %

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 Power Switch Design
Power Switch Design
1. Power BJTs, Power MOSFETs, and IGBTs
1. BJTs – greater capacity, low ON state loss
2. MOSFETs – fast switching, voltage driven
3. IGBTs – combined modules, powerful and expensive

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 Power Switch Design
Power Switch Design
Illustrate the design procedures with a design example:

Design requirement:

A 240-watt DC/DC boost converter with Vin=24V and

Vout=48V.

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 Power Switch Design
Power Switch Design
1. Current and voltage rating requirements

Design:
Peak transistor current equals to

Iin=P/Vin=240W/24V=10A

Voltage rating requirements

VTmax=Vout+VF(diode)=48+0.7V=48.7V

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 Power Switch Design
Power Switch Design
2. Device selection based on the requirements

Design:
Candidate I: BJT 2N6547
IC=15A>10A and VCE=400V>48V

Candidate II: power MOSFET HUFA75307D3

ID=15A>10A and VDS=55V>48V

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 Power Switch Design
Power Switch Design
Datesheet 2N6547

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 Power Switch Design
Power Switch Design
Datesheet HUFA75307D3

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 Power Switch Design
Power Switch Design
3. Base/Gate drive requirements
2N6547: For IC=15A, must have IB>=3A, not desirable

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 Power Switch Design
Power Switch Design
3. Base/Gate drive requirements (cont’d)
HUFA75307D3 is voltage driven:
Threshold (mininum ON) gate-source voltage VGSth =4V
Maximum gate-source voltage VGSmax=20V

Can be driven by TTL (+5V) or CMOS logic +15V digital

circuits

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 Power Switch Design
Power Switch Design
4. Transient performances
2N6547
Rise time: tr=1.0µs
Fall time: tf=1.5µs
HUFA75307D3
Rise time: tr=40ns
Fall time: tf=45ns

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 Power Switch Design
Power Switch Design
5. Selection
Power MOSFET HUFA75307D3
6. Switching loss

= (Wloss _ ON + Wloss _ OFF ) = ds d (tON + tOFF )

Wloss 1 V I
PSW _ loss =
T T 2T
48 ×10
=
1
(60 + 100)× 10 −9 = 0.768W
2×
20 × 103

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 Power Switch Design
Power Switch Design
7. ON state loss
1. ON state time

1  Vout + VF − Vin  1  48 + 0.7 − 24 

t1 =   = 3   sec = 25.73 µs
f  Vout  20 ×10  48 

2. ON state loss

PON _ loss =
WON _ loss
T
1 2
(
= I D rDS ( ON )t1
T
)
=
1
1
( )
152 × 0.075 × 25.73 ×10 −6 = 8.684W

20 ×103

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 Power Switch Design
Power Switch Design
8. Overall loss

Ploss = PSW _ loss + PON _ loss = 9.452W < PD = 45 W

(see the datasheet of HUFA75307D3)

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Power Switch Design
Calculation of junction to sink temperature difference

∆ T JC ( t ) = Ploss Z θ JC ( 50 %) ( t ) R θ JC
∴ ∆T js = Rθjs × Ploss = 3.3o C/W × 9.452W = 31.2o C < Tjmax = 175°C

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 Power Switch Design
Power Switch Design
HUFA75307D3 ON-resistance and turn-on and turn-off time

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