SPICE MOSFET Declaration

The MOSFET is a 4-terminal device that is specified in the netlist as: Mname ND NG NS NB ModName <Optional parameters> The optional parameters are: L= value W= value AD=value AS=value PD=value PS=value NRD=value
where: L,W: gate length and width (in m). Default: 1 meter AD,AS: source and drain diffusion (in sq. m). Default: 0 PD, PS: perimeter of the source and drain (in m). Default: 0 meter NRD: number of squares for drain diffusion, for resistance calculations. Default: 1 sq. NG NS ND NB

If an optional parameter is omitted the default values are used. Here is an example declaration for the devices at right: M1 1 2 3 4 MyFet L=1u W=10u
2 3 1 4 2 1 3 4

Additional device parameters, including whether the device is NMOS or PMOS, are defined in the MODEL declaration for MyFet (next slide!)

Bob York

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SPICE MOS Model

The SPICE MOSFET Model is defined in the netlist as .MODEL ModName xMOS (parameters) Some key parameters are:
Parameter VTO KP GAMMA PHI LAMBDA CGSO CGDO CGBO U0 TOX Description Zero-bias threshold voltage Transconductance parameter, 0 Cox Bulk threshold parameter Surface potential Channel-length modulation Gate-source overlap capacitance/channel width Gate-drain overlap capacitance/channel width Gate-bulk overlap capacitance/channel width Mobility 0 Oxide thickness Units Volts Amps/Volts2 Volts1/2 Volts Volts-1 Farads/meters Farads/meters Farads/meters cm2/V-s meters Default 0 2E-5 0 0.6 0 0 0 0 600

(xMOS is either NMOS or PMOS)

In terms of these parameters some of the basic device characteristics are:

Id

1 W KP Vgs VTO 2 L

1 LAMBDA Vds
2

Vt VTO GAMMA

PHI Vsb PHI

A simple NMOS device with no capacitances or body effects might be specified as .MODEL MyFet NMOS (VTO=1 KP=0.25) If the user specifies U0 and TOX, then KP is computed as: Key Device Capacitances:
Bob York

KP 0Cox

Cox

3.9 0 TOX

2 C gs CoxWL CGSO W 3

Cdg CGDO W
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Level 1 MOS SPICE Parameters

Parameter VTO KP GAMMA PHI LAMBDA LD WD RD RS RG RB RDS RSH IS JS PB CBD CBS CJ CJSW MJ MJSW FC CGSO CGDO CGBO NSUB NSS NFS U0 TOX TPG KF AF Description Zero-bias threshold voltage Transconductance parameter, Cox Bulk threshold parameter Surface potential Channel-length modulation Lateral diffusion length Lateral diffusion width Drain ohmic resistance Source ohmic resistance Gate ohmic resistance Bulk ohmic resistance Drain-source shunt resistance Drain-source diffusion sheet resistance Bulk p-n saturation current Bulk p-n saturation/current area Bulk p-n potential Bulk-drain zero-bias p-n capacitance Bulk-source zero-bias p-n capacitance Bulk p-n zero-bias bottom capacitance/length Bulk p-n zero-bias perimeter capacitance/length Bulk p-n bottom grading coefficient Bulk p-n sidewall grading coefficient Bulk p-n forward-bias capacitance coefficient Gate-source overlap capacitance/channel width Gate-drain overlap capacitance/channel width Gate-bulk overlap capacitance/channel width Substate doping density Surface-state density Fast surface-state density Mobility Oxide thickness Gate material type: + 1 =opposite of substrate, -1=same, 0=Aluminum Flicker noise coefficient Flicker noise exponent Units Volts Amps/Volts2 Volts1/2 Volts Volts-1 meters meters Ohms Ohms Ohms Ohms Ohms Ohms/square Amps Amps/meters2 Volts Farads Farads Farads/meters2 Farads/meters Default 0 2E-5 0 0.6 0 0 0 0 0 0 0 0 1E-14 0 0.8 0 0 0 0 0.5 0.33 0.5 0 0 0 0 0 0 600 +1 0 1

Farads/meters Farads/meters Farads/meters 1/centimeter3 1/centimeter2 1/centimeter2 cm2/V-s meters

Bob York

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MOS Devices in MultiSim

Select PlaceComponent This will appear in the circuit schematic
Q6

100um

100um

Double-click on the component:

This is where we modify the SPICE model parameters In MultiSim

A number of virtual devices to choose from, here we select the 3terminal enhancement-mode MOSFET

Click Edit Model to see SPICE Model declaration

Bob York

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Simple NMOS/PMOS Devices in MultiSim

In ECE 2 we will often solve problems assuming a very basic device described by a threshold voltage, transconductance, and output resistance. We can create simple MOS models with these three parameters as follows: NMOS PMOS

Remember: PMOS enhancement devices have a negative VTO!

Id

1 W KP Vgs VTO 2 L

1 LAMBDA Vds
2

After making desired changes in the model, select Change Part Model. Only use Change All Models if you want the same model to apply to all the FETs in your circuit!

Bob York

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Typical Parameters (Long and Short)

.MODEL 2N7000 NMOS (LEVEL=3 RS=0.205 NSUB=1.0E15 DELTA=0.1 +KAPPA=0.0506 TPG=1 CGDO=3.1716E-9 RD=0.239 VTO=1.000 VMAX=1.0E7 +ETA=0.0223089 NFS=6.6E10 TOX=1.0E-7 LD=1.698E-9 UO=862.425 +XJ=6.4666E-7 THETA=1.0E-5 CGSO=9.09E-9 L=2.5E-6 W=0.8E-2)

Bob York

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