LIST OF EXPERIMENTS

1. Verification of KVL and KCL

M.A.M SCHOOL OF ENGINEERING

2. Verification of Thevenin and Norton Theorems. 3. Verification of superposition Theorem. 4. Frequency response of series and parallel resonance circuits 5. Verification of Maximum power transfer and reciprocity theorems. 6. Characteristics of PN and Zener diode

Siruganur, Trichy-621105
DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING LAB MANUAL Subject Code: EC2155 Subject Name: CIRCUITS AND DEVICES LAB Year/Sem: I/II ECE

7. Characteristics of CE configuration 8. Characteristics of CB configuration 9. Characteristics of UJT and SCR 10. Characteristics of JFET and MOSFET 11. Characteristics of DIAC and TRIAC. 12. Characteristics of Photodiode and Phototransistor.

[Type text] EC2155-CIRCUITS AND DEVICES LAB

1.VERIFICATION OF KVL & KCL AIM: To verify (i) kirchoffs current law (ii) kirchoffs voltage law (i) KIRCHOFFS CURRENT LAW:

store destroy (or) generate charge. Hence the current must sum to zero. A hydraulic analog sum is zero. For example consider three water pipes joined pn the shape of Y. we defined free currents as following into each of 3 pipes. If we insists that what is always
CIRCUIT DIAGRAM: 1. Kirchhoffs current law:

COMPONENTS REQUIRED:

Kirchoff`s current law

Sl.No components

Range

Quantity

1.0k

3.3k

1 2 3 4 5

RPS Resistor Ammeter Bread board Connecting wires

(0-15)V 1 K (0-10)mA -----------

1
5V 4.7 K

3 3 1 few
1.0k

Practical measurement:
(0-20)mA + (0-10)mA
3.3k

4.7 K +

5V

THEORY: krichoffs current law: The algebraic sum of the currents entering in any node is Zero. The law represents the mathematical statement of the fact change cannot accumulate at a node. A node is not a circuit element and it certainly cannot
[Type text] EC2155-CIRCUITS AND DEVICES LAB

A
-

(0-10)mA

2.VERIFICATION OF THEVENINS THEOREM AIM: To verify Thevenins theorem and to find the current flowing through the load resistance. COMPONENTS REQUIRED:

Thevenin`s voltage. It is the voltage between the terminals on open circuit condition, Hence it is called open circuit voltage denoted by V oc. Zth is called Thevennin`s impedance. It is the driving point impedance at the terminals when all internal sources are set to zero too. If a load impedance ZL is connected across output terminals, we can find the current through it IL = Vth/

Sl.No

components

Range

Quantity

1 2

RPS Resistor

(0-15)V 1K,2.2K,3.3K 2,7K

1 Each 1

3 4 5 6 THEORY:

Ammeter voltmeter Bread board Connecting wires

(0-5)mA (0-5)V -----------

1 1 1 few

Thevenin`s theorem:

Any linear active network with output terminals can be replaced by a single voltage source Vth in series with a single impedance Zth. Vth is the
[Type text] EC2155-CIRCUITS AND DEVICES LAB

EQUVALENT CIRCUIT:

PROCEDURE:

1. 2. 3. 4. 5. 6. 7. 8. 9.
TABULATION:

Connections are made as per the circuit diagram. Check your connections before switch on the supply. Find the Thevenins voltage (or) open circuit voltage. Replace voltage source by internal resistor. Determine the Thevenins resistance. Find IL by using Thevenins formula. Compare the observation reading to theoretical value. switch off the supply Disconnect the circuit.

Vth

Rth

IL(mA)

theoretical practical theoretical practical theoretical practical

RESULT:

Thus the Thevenins theorem was verified. Theoretical: Vth = Rth = IL = Practical: Vth = Rth = IL =

[Type text] EC2155-CIRCUITS AND DEVICES LAB

VERIFICATION OF NORTONS THEOREM

Nortons theorem:
AIM:

To verify Nortons theorem and to determine the current flow through the load resistance.

Any linear active network with output terminals can be replaced by a single current source. Isc in parallel with a single impedance Zth. Isc is the current through the terminals of the active network when shorted. Zth is called Thevennin`s impedance. Current through RL= Isc Zth/( Zth+ZL)

COMPONENTS REQUIRED:

Sl.No

Components

Range

Quantity

CIRCUIT DIAGRAM:
Norton
10K 8K To find I sc 10K 8K I

+ sc
5V 4.7K 5.6K 5V 4.7K

1 2

RPS Resistor

(0-15)V 10K,5.6K,8.2K 6K

1 Each 1
XMM1 To find R th 10K 8K R th 5V 4.7K To find IL 10K 8K

(0-500)mA

Ammeter

(0-10)mA,mc (0-5)mc,mc

1 1 1 few

5.6K

4.7K

(0-500)mA

4 5
[Type text]

Bread board Connecting wires

-----------

EC2155-CIRCUITS AND DEVICES LAB

Norton`s Equivalent circuit

RL =5.6K I sc Rth

A -

(0-500)mA

TABULATION:

PROCEDURE:

Theoretical

Practical

Isc

Rth

Isc

Rth

1. 2. 3. 4. 5. 6. 7. 8.

Connections are made as per the circuit diagram. Check your connections before switch on the supply. Find the Nortons current (or) short circuit current in load resistance. Replace voltage source by internal resistor. Determine the equivalents resistance. Find IL by using Nortons formula. Compare the observation reading to theoretical value. switch off the supply 9. Disconnect the circuit .
RESULT:

Thus the Nortons theorem was verified. Theoretical: Isc = Rth = IL =

[Type text] EC2155-CIRCUITS AND DEVICES LAB

Practical: Isc = Rth = IL =

AIM: To obtain the resonance frequency of the given RLC series electrical network.
COMPONENTS REQUIRED:

Series resonance
1.0uF

50 mH L R 1.0k (0-5)V

C Fn. gen

Sl.No

Components

Range

Quantity
TABULATION: FREQUENCY (HZ) VR(VOLT)

1 2 3 4 5 6 7

Function generator Resistor Voltmeter capacitor Bread board Connecting wires Decade inductance box

0-2MHz,0-3MHZ 1K, (0-5) V 1F ---------(0-100)mH

1 1 1 1 1 Few 1

FORMULA USED:Series resonance frequency F=1/ (2 (LC)) CIRCUIT DIAGRAM: [Type text] EC2155-CIRCUITS AND DEVICES LAB

CIRCUIT DIAGRAM

Parallel resonance

Fn. gen

(0-5)V

C
1.0uF

1.0k

L 50 mH

2. Vary the frequency of the function generator from 50 Hz to 20 KHz. 3. Measure the corresponding value of voltage across the resistor R for series RLC circuit. 4. Repeat the same procedure for different values of frequency. 5. Tabulate your observation. 6. Note down the resonance frequency from the graph.
RESULT:

TABULATION: FREQUENCY (HZ) VR(VOLT)

Thus the resonance frequency of series RLC circuit is obtained. Practical value =

Theoretical value = Thus the resonance frequency of Parallel RLC circuit is obtained. Practical value =

Theoretical value =

PROCEDURE:

5. VERIFICATION OF MAXIMUM POWER TRANSFER THEOREM AIM:

1. Connections are made as per the circuit diagram.

[Type text] EC2155-CIRCUITS AND DEVICES LAB

To find the value of resistance RL in which maximum power is transferred to the load resistance.
COMPONENTS REQUIRED:

Maximum power transfer to the load resistor occurs when it has a value equal to the resistance of the network looking back at it from the load terminals.
CIRCUIT DIAGRAM:

Sl.No

Components

Range

Quantity
(0-10)mA
1.0k

Theoretical calculation
To find R th
1.0k

1 2 3 4 5 6

Resistor Ammeter Bread board Connecting wires RPS DRB

1K,2.2 K (0-10) mA ---------(0-30)V (0-10)K

1
5V
2.2k

1 1 Few 1 MODEL GRAPH:

RL

2.2k

R th

Maximum power transfer theorem:

TABULATION:

[Type text] EC2155-CIRCUITS AND DEVICES LAB

2. By giving various values of the resistance in DRB, note the ammeter

Resistance (RL) Current I(mA) Power =I2RL

Reading. 3. Calculate the power and plot the power Vs resistance graph. 4. Note the maximum power point corresponding resistance from the graph.

RESULT:

Thus the value of unknown resistance in which the maximum power is transferred to the load was found.

Theoretical load resistance Practical load resistance Maximum power

= = =

VERIFICATION OF RECIPROCITY THEOREM PROCEDURE: AIM:

1. Connections are given as per the circuit diagram.

[Type text] EC2155-CIRCUITS AND DEVICES LAB

To verify Reciprocity theorem and to determine the current flow through the load resistance.
COMPONENTS REQUIRED:

In a linear, bilateral network a voltage source V volt in a branch gives rise to a current I, in another branch. If V is applied in the second branch the current in the first branch will be I. This V/I are called transfer impedance or resistance. On changing the voltage source from 1 to branch 2, the current in branch 2 appears in branch 1.
CIRCUIT DIAGRAM

Sl.No

Components

Range

Quantity

1 2

RPS Resistor

(0-15)V 100,470, 820, 100

1 Each 1

3 4 5

Ammeter Bread board Connecting wires

(0-30) mA, -----------

1 1 few

THEORY:

TABULATION:

Reciprocity theorem
[Type text] EC2155-CIRCUITS AND DEVICES LAB

Practical value :( circuit -I)

1. Connect the circuit as per the circuit diagram. V(volt) I(mA) Z=V/I 2. Switch on the supply and note down the corresponding ammeter readings. 3. Find ratio of input voltage to output current. 4. Interchange the position of the ammeter and power supply. Note down the Corresponding ammeter readings 5. Verify the reciprocity theorem by equating the voltage to current ratio.

PRACTICAL VALUE :( CIRCUIT -I)

RESULT: Thus the reciprocity theorem was verified

V(volt)

I(mA)

Z=V/I

6. CHARACTERISTICS OF PN JUNCTION DIODE

AIM:
PROCEDURE: [Type text] EC2155-CIRCUITS AND DEVICES LAB

To plot the characteristic of PN junction diode.

COMPONENTS REQUIRED:

2. Reverse Resistance Rr= VR/IR

CIRCUIT DIAGRAM

Sl.No

Components

Range

Quantity

FORWARD BIAS:

1K
1 2 3 4 Diode RPS Resistor Ammeter IN 4001 (0-30)V 1K, (0-50)mA (0-500)A 5 voltmeter (0-1)V (0-30)V 6 7 Bread board Connecting wires --------1 1 1 1 1 1 1 1 few
REVERSE BIAS: FORMULA USED:

(0-50)mA

+ RPS(0-30)V IN4001 (0-1)V

1. Forward Resistance Rf=VF/IF

[Type text] EC2155-CIRCUITS AND DEVICES LAB

1K

(0-500)microamps

RPS(0-30)V IN4001 + (0-1)V

TABULATION:

PROCEDURE: FORWARD BIAS REVERSE BIAS

Forward bias:
Voltage(VF) Current IF (mA) Voltage (VR) Current IR(mA)

1. The circuit connections are made as per the circuit diagram 2. Vary the power supply voltage such a way that readings are taken in steps of .1 V in the voltmeter. 3. Note down the corresponding ammeter readings. 4. Plot the graph current Vs voltage. 5. Same steps are followed by reverse bias. 6. calculate dynamic resistance r=(V/I)
RESULT:

Thus the characteristic of PN junction diode was obtained. (i)Forward resistance=

MODEL GRAPH: CHARACTERISTICS OF ZENER DIODE [Type text] EC2155-CIRCUITS AND DEVICES LAB

(ii)Reverse resistance=

AIM:

To draw the V-I characteristic of Zener diode and find the parameter.
COMPONENTS REQUIRED:

Sl.No

Components

Range

Quantity

1 2 3 4 5 6 7

Zener Diode RPS Resistor Ammeter voltmeter Bread board Connecting wires (0-30)V 1K, (0-50)mA (0-1)V ---------

1 1 1 1 1 1 few

FORMULA USED: 1. Forward Resistance Rf=VF/IF 2. Reverse Resistance Rr= VR/IR

[Type text] EC2155-CIRCUITS AND DEVICES LAB TABULATION:

FORWARD BIAS: S.No Forward voltage (V) Forward current I (mA)

REVERSE BIAS:

S.No

Reverse voltage (V)

Reverse current I (A)

PROCEDURE:

Forward bias characteristic: 1. The circuit connections are made as per the circuit diagram 2. Keep the RPS connected in a minimum value and switch ON the power supply gradually increase voltage in step of .1V . 3. Note down the corresponding ammeter and voltmeter readings. 4. Plot the forward V-I curve . 5. calculate forward resistance Rf=(V/I)

MODEL GRAPH
[Type text] EC2155-CIRCUITS AND DEVICES LAB

Reverse bias characteristic: 1. Connect the circuit as per the circuit diagram.

2. Keep the RPS connected in a minimum value and switch ON the power supply. 3. Gradually increase voltage in step of .1V. 4. Vary the power supply in step by 1 V. 5. Note down corresponding reverse voltage and current. 6. Plot the graph current Vs voltage. 7. Plot the reverse V-I curve.
RESULT:

AIM:

To draw input and output characteristics of BJT in CE configuration and to determine its parameter.
COMPONENTS REQUIRED:

Sl.No

Components

Range

Quantity

Thus the characteristic of Zener diode was studied and their characteristic was drawn. (i)Forward resistance= (ii)Reverse resistance=

1 2 3 4

Transistor RPS Resistor Ammeter

Bc 547 (0-30)V 1K, (0-50)mA (0-500) A

1 2 2 1

voltmeter

(0-1)V,mc (0-30)V,mc

1 1 1 few

6 7

Bread board Connecting wires

---------

7. CHARACTERISTICS OF CE CONFIGURATION [Type text] EC2155-CIRCUITS AND DEVICES LAB

FORMULA USED:

1. Input impedance (hie) =VBE/IB at VCE constant 2. Forward current gain (hfe) = IC/IB at VCE constant 3. Output conductance (hoe) = IC/VCE at IB constant 4. Reverse voltage gain (hre) = VBE/VCE at IB constant
CIRCUIT DIAGRAM:

INPUT CHARACTERISTICS: IE (mA)

(0-50)mA - + 1K (0-500)micro amps

1K

VBE (V) OUTPUT CHARACTERISTICS:

(0-30)V RPS(0-30)V (0-2)V

RPS(0-30)V

IC(mA)

IE

VCB (V) TABULATION: MODEL GRAPH: [Type text] EC2155-CIRCUITS AND DEVICES LAB

INPUT CHARACTERISTICS: VCE= (v) VCE= (v) VCE= (v)

PROCEDURE:

1. The circuit connections are made as per the circuit diagram 2. To draw the input characteristics VCE is kept constant

VBE(v)

IB(A)

VBE(v)

IB(A)

VBE(v)

IB(A)

3. Input RPS is varied and the corresponding values of I B and VBE Voltage are noted 4. To draw the output characteristics IB is kept constant 5. output RPS is varied and the corresponding values of IC and VCE are Noted. 6. Corresponding input and output characteristics curves are drawn.
OUTPUT CHARACTERISTICS: IB= (A) IB= (A) IB= (A)

RESULT: Thus the static characteristics of CE mode configuration is drawn from the output graph the h - parameter are determined.

VCE(v)

IC(mA)

VCE(v)

IC(mA)

VCE(v)

IC(mA)

(i)Input impedance (ii)Forward current gain (iii)Output conductance (iv)Reverse voltage gain

= = = =

8. STATIC CHARACTERISTICS OF CB CONFIGURATION [Type text] EC2155-CIRCUITS AND DEVICES LAB

AIM:

1. Input impedance (hie) =VBE/IE at VCB constant 2. Forward current gain (hfe) = IC/IE at VCB constant 3. Output conductance (hoe) = IC/VCB at IE constant 4. Reverse voltage gain (hre) = VBE/VCB at IE constant
CIRCUIT DIAGRAM:

To draw input and output characteristics of BJT in CB configuration and to determine its parameter.
COMPONENTS REQUIRED:

Sl.No

Components

Range

Quantity
1k (0-100)mA

(0-50)mA 1k

1 2 3 4

Transistor RPS Resistor Ammeter

BC 547 (0-30)V 1K, (0-30)mA (0-30) mA

1 2
(0-30)v

2 1 1 1 1 1 Few

RPS(0-30)V (0-30)v (0-2)V

voltmeter

(0-2) V,mc (0-30)V,mc

6 7

Bread board Connecting wires

(0-30)V,mc -----

FORMULAS USED: [Type text] EC2155-CIRCUITS AND DEVICES LAB

MODEL GRAPH:

INPUT CHARACTERISTICS: VCB= VBE(v) (v) IE(mA) VCB= VBE(v) (v) IE(mA) VCB= VBE(v) (v) IE(mA)

OUTPUT CHARACTERISTICS:

IE=

(mA)

IE=

(mA)

IE=

(mA)

TABULATION: PROCEDURE: [Type text] EC2155-CIRCUITS AND DEVICES LAB

1. The circuit connections are made as per the circuit diagram 2. To draw the input characteristics VCB is kept constant 3. VBE is varied and the corresponding values of IE are noted 4. To draw the output characteristics IE is kept constant 5. VCB is varied and the corresponding values of IC are noted 6. Corresponding input and output characteristics curves are drawn

AIM:

To determine the static characteristics of UJT.

COMPONENTS REQUIRED:

Sl.No 1 2 UJT RPS

Components

Range 2N2646 (0-30)V 1K,22K (0-50)mA (0-10)V,mc (0-30)V,mc

Quantity 1 2 Each 1 1 1 1 1 Few

RESULT:

3 4 5 = 6 7

Resistor Ammeter voltmeter

Thus the static characteristics of transistor under the CB mode Was determined. (i)Input impedance (hib)

(ii)Forward current gain (hfb) = (iii)Output conductance (hob) = (iv)Reverse voltage gain (hrb) =

Bread board Connecting wires

-----------

FORMULA USED:

1. Negative resistance = VBE/IE. 2. Intrinsic stand off ratio = (VP-VBE)/VB1B2.

9. CHARACTERISTICS OF UJT [Type text] EC2155-CIRCUITS AND DEVICES LAB

CIRCUIT DIAGRAM:

R2 2.2K (0-50)mA A B1 E B2 V4 V1 0Vdc RPS(0-30)V (0-30)V V3 V V (0-30)V RPS(0-30)V 0Vdc Q1 2N2646

TABULATION:

VB1B2= VBE (V) IE (mA) VBE(V)

VB1B2= IE(mA)

R1 1k

I1

V2

M ODEL GRAPH: PROCEDURE:

1. Circuit connections are made as per the circuit diagram. 2. The voltage VB1B2 is kept constant and VBE is varied. 3. The corresponding values of IE are noted. 4. For different constant values of VB1B2 the values of VBE & IE are noted. 5. The input side RPS is varied slowly from zero and the voltmeter readings are noted.
[Type text] EC2155-CIRCUITS AND DEVICES LAB

6. At one point, the needle deflects back and currents starts increasing. 7. The currents must not increase beyond 25mA. 8. Graph is plotted. 9. The current must not increase beyond .25mA.

To determine the characteristics of SCR.

COMPONENTS REQUIRED

Sl.No
APPLICATION:

Components

Range

Quantity

1. Square or Saw tooth wave generator. 2. over voltage detector. 3. Switching, timing phase control circuit etc. 1 2 3
RESULT:

SCR RPS Resistor Ammeter

2P4M (0-30)V 1K,10K (0-50)mA (0-100) A

1 2 Each 1 1 1 1 1 Few

Thus the parameter of UJT was determined from its characteristics. 1. negative resistance = 2. intrinsic stand off ratio = 5 6 7
CHARATERISTICS OF SCR AIM: [Type text] EC2155-CIRCUITS AND DEVICES LAB

voltmeter Bread board Connecting wires

(0-30)V,mc ---------

CIRCUIT DIAGRAM:

Iak

Vak(V)

TABULATION:

I G= VAK (V)

(A) IAK (mA)

I G= VAK(V)

(A) IAK(mA)

MODEL GRAPH: [Type text] EC2155-CIRCUITS AND DEVICES LAB

PROCEDURE:

1. Circuit connections are made as per the circuit diagram. 2. Set the gate current IG equal to firing current vary anode to cathode Voltage, VAK in steps of 0.5V and note down the corresponding anode current IAK 3. VBO is the point where voltages suddenly drops & there is sudden increase in anode current IA. 4. Note down the current at that point called latching current. 5. Increase VAK insteps of N till its maximum. 6. Open the gate terminal & decrease the VAK. 7. Holding current is the current, flow in which the deflection in both Voltmeter VAK & ammeter suddenly reduces to zero.
RESULT: AIM:

To determine the drain & transfer characteristics of given JFET & to find its parameters.
COMPONENTS REQUIRED:

Sl.No

Components

Range

Quantity

1 2 3

FET RPS Resistor Ammeter

BFW 10 (0-30)V 1K (0-10)mA (0-30)V (0-10)V

1 2 2 1 1 1 1 few

Thus the characteristic of SCR was determined. Latching current = Holding current = VBO current =

Voltmeter

5 6

Bread board Connecting wires

---------

10. CHARACTERISTICS OF JFET FORMULA USED: [Type text] EC2155-CIRCUITS AND DEVICES LAB

1. Drain resistance (rd)

= VDS/ID
MODEL GRAPH: Drain Characteristics

2. Trans conductance (gm) = ID/VGS 3. Amplification factor () =rd*gm. CIRCUIT DIAGRAM:

Id

Vgs=0v Vgs=-1v Vgs=-2v Vds(v)

TABULATION: DRAIN CHARACTERISTICS:

VGS= VDS(V) ID(mA)

VGS= VDS(V) ID (mA)

VGS= VDS(V) ID(mA)

[Type text] EC2155-CIRCUITS AND DEVICES LAB

MODEL GRAPH:

PROCEDURE: DRAIN CHARACTERISTICS:

1. Connections are made as per the circuit diagram.

Transfer Characteristics:

2. Set gate voltage VGS=-1, vary the drain voltage VDS instep of 1V & note down the corresponding drain current ID. 3. Repeat the above procedure for VGS=0V,-2V. 4. Plot the graph for a constant VDS Vs ID 5. Find the drain resistance (rd) = VDS/ID

Id

Vgs(v)

TRANSFER CHARACTERISTICS:

1. Connections are made as per the circuit diagram. TRANSFER CHARACTERISTICS: 2. Set gate voltage VDS=1V, vary the gate voltage VGS in step of 1V and VDS= VGS(V) ID(mA) VDS= VGS(V) ID(mA) VDS= note down the corresponding drain current ID VGS(V) ID(mA) 3. Repeat the above procedure for VDS=5V, 10V. 4. Plot the graph for VGS Vs ID. 5. Find the Trans conductance (gm) gm = ID/VGS
[Type text] EC2155-CIRCUITS AND DEVICES LAB

CHARACTERISTICS OF MOSFET RESULT: AIM:

Thus the drain and transfer characteristics of JFET is drawn and the parameters were determined. 1. Drain resistance (rd) 2. Trans conductance (gm) 3. Amplification factor () = = =...

To draw the static characteristics of the given MOSFET and to find its parameter.
COMPONENTS REQUIRED:

Sl.No

Components

Range

Quantity

1 2 3 4 5

RPS Resistor MOSFET Ammeter Voltmeter

(0-30)V 330 ,470

1 Each 1 1

(0-50)mA (0-10)V, (0-30)V

1 1 1 1 few

6 7

Bread board Connecting wires

-----------

[Type text] EC2155-CIRCUITS AND DEVICES LAB

FORMULA USED:

TABULATION: DRAIN CHARACTERISTICS: VGS= VDS(V) ID(mA) VDS(V) VGS= ID (mA) VDS(V) VGS= ID(mA)

Drain resistance rd =VDS/ ID Trans conductance (gm) = ID/VGS Amplification factor (M) = rd* gm

CIRCUIT DIAGRAM

TRANSFER CHARACTERISTICS: VDS= VGS(V) ID(mA) VGS(V) VDS= ID(mA) VGS(V) VDS= ID(mA)

[Type text] EC2155-CIRCUITS AND DEVICES LAB

PROCEDURE:

11. CHARACTERISTICS OF DIAC AIM:

Transfer characteristics: 1. 2. 3. 4. 5. Connections are made as per the circuit diagram. Set VDS some constant voltage. vary the input side RPS measure the corresponding VGS and ID measure the VGS in which ammeter shows deflection and VDS Plot the graph voltage against current.

To draw the VI characteristics of the given DIAC and determine cut in voltage.
COMPONENTS REQUIRED:

Drain characteristics: 1. Set the input above the threshold voltage. 2. Vary the input side RPS and measure the corresponding VDS and ID
3. Plot the graph voltage against current.

Sl.No

Components

Range

Quantity

1 2 3

RPS Resistor DIAC Ammeter Voltmeter Bread board Connecting wires

(0-60)V 1 K DB3 (0-30)mA (0-50)V -----------

1 1 1 1 1 1 few

RESULT:

4 5

Thus the characteristics of MOSFET were drawn. Drain resistance rd =VDS/ ID Trans conductance (gm)= ID/VGS Amplification factor (M) = rd* gm
= =

6 7

[Type text] EC2155-CIRCUITS AND DEVICES LAB

CIRCUIT DIAGRAM DIAC

MT1 is positive with respect to MT2

Sl.NO

Voltage(V)

Current(mA)

1.0k

V1
12 V

MT2 is positive with respect to MT1

Sl.NO

Voltage(V)

Current(mA)

[Type text] EC2155-CIRCUITS AND DEVICES LAB

PROCEDURE:

CHARACTERISTICS OF TRIAC AIM:

1. MT1 is positive w.r.t MT2. 2. Connections are made as per the circuit diagram. 3. Vary the power supply. 4. Note down the corresponding ammeter and voltmeter reading. 5. Plot the graph V against I. 6. MT1 is negative w.r.t. MT2. 7. Repeat the step 3 to 5.

To draw the characteristics of the given TRIAC and determine break over voltage.
COMPONENTS REQUIRED:

Sl.No

Components

Range

Quantity

RESULT:

Thus the characteristics of DIAC were drawn and the cut in voltage was determined.

1 2 3 4 5

RPS Resistor TRIAC Ammeter Voltmeter

(0-30)V 1 K/5w, 1 K

2 2 1

(0-50)mA (0-15)V (0-30)V

2 1 1 1 few

6 7

Bread board Connecting wires

-----------

[Type text] EC2155-CIRCUITS AND DEVICES LAB

THEORY:

It is a three terminal semiconductor switching device which can control alternating current in a load. Its three terminals are MT 1 and MT2 and the gate. Triac is equivalent to two SCRs connected in parallel but in the reverse direction. So triac will act as a switch for both directions. Like an SCR, a triac also starts conducting only when the breakover voltage is reached. Earlier to that the leakage current which is very small in magnitude flows through the device and therefore remains in the OFF state. The device, when starts conducting, allows very heavy amount of current to flow through it. The high inrush of current must be limited using external resistance, or it may otherwise damage the device. During the positive half cycle, MT1

[Type text] EC2155-CIRCUITS AND DEVICES LAB

TABULATION:

PROCEDURE:

MT1 is positive with respect to MT2

1. Connect the circuit as per circuit diagram. 2. To set gate current (Ig),VMT1,VMT2

I G=

I G=

3. Vary Vg till VAK suddenly drops. 4. Note down the corresponding IG,set gate current equal firing current. 5. Vary anode to cathode Vge. 6. Vary VAK supply voltage in steps 7 note down the corresponding ammeter readings. 7. Open the gate terminal & decrease VAK.
RESULT:

VMT2

IMT2

VMT2

IMT2

Thus the characteristic of TRIAC was drawn. MT2 is positive with respect to MT1 MT1 break over voltage (VBO) = MT1 break over current (IBO) I G= I G= =

MT2 break over voltage (-VBO) = MT2 break over current (-IBO) =

VMT2

IMT2

VMT2

IMT2

[Type text] EC2155-CIRCUITS AND DEVICES LAB

12.CHARACTERISTICS OF PHOTODIODE

CIRCUIT DIAGRAM PHOTO DIODE

AND PHOTOTRANSISTOR
Aim: To study of photo-detectors characteristics. 1. Photo-diode. 2. Photo-transistor APPARATUS REQUIRED: S. No. 1 2 3 Apparatus Required Power supply Ammeter Voltmeter Range Quantity TABULATION (0-30) V (0-10) mA (0-10) V (0-30) V 4 Resistor 680 1 K 5 6 7 Breadboard Connecting wires Photo diode Phototransistor 2 1 1 1 1 1 PHOTO TRANSISTOR 1 10 1 1

[Type text] EC2155-CIRCUITS AND DEVICES LAB

TABULATION

RESULT
Current

Distance(cm)

Thus the following characteristics of Photo diode & PhotoTransistor were obtained and graph was drawn.

PROCEDURE 1) Connect the circuit as per the circuit diagram. 2) Set the voltage of the bulb (Say 2V), vary the Voltage of the diode in stepsof 1Vand note down The corresponding diode value Ir 3) Repeat the above Procedure for Vd=4V, 6V,etc 4) Plot the graph.

[Type text] EC2155-CIRCUITS AND DEVICES LAB