IRF530, SiHF530

Vishay Siliconix

Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 26 5.5 11 Single
D

FEATURES
100 0.16

Dynamic dV/dt Rating Repetitive Avalanche Rated 175 C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC

Available

RoHS*
COMPLIANT

TO-220AB

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

S S N-Channel MOSFET

ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220AB IRF530PbF SiHF530-E3 IRF530 SiHF530

ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)

PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta TC = 25 C Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw EAS IAR EAR PD dV/dt TJ, Tstg VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM LIMIT 100 20 14 10 56 0.59 69 14 8.8 88 5.5 - 55 to + 175 300d 10 1.1 W/C mJ A mJ W V/ns C lbf in Nm A UNIT V

Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 C, L = 528 H, Rg = 25 , IAS = 14 A (see fig. 12). c. ISD 14 A, dI/dt 140 A/s, VDD VDS, TJ 175 C. d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91019 S11-0510-Rev. B, 21-Mar-11 www.vishay.com 1

This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF530, SiHF530
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.50 MAX. 62 1.7 C/W UNIT

SPECIFICATIONS (TJ = 25 C, unless otherwise noted)

PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode
D

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS

VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mA VDS = VGS, ID = 250 A VGS = 20 V VDS = 100 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 150 C VGS = 10 V ID = 8.4 Ab VDS = 50 V, ID = 8.4 Ab VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 ID = 14 A, VDS = 80 V, see fig. 6 and 13b

100 2.0 5.1

0.12 -

4.0 100 25 250 0.16 -

V V/C V nA A S

670 250 60 10 34 23 24 4.5 7.5

26 5.5 11 nH ns nC pF

VGS = 10 V

VDD = 50 V, ID = 14 A Rg = 12 , RD = 3.6, see fig. 10b

Between lead, 6 mm (0.25") from package and center of die contact

150 0.85

14 A 56 2.5 280 1.7 V ns C

TJ = 25 C, IS = 14 A, VGS = 0 Vb TJ = 25 C, IF = 14 A, dI/dt = 100 A/sb

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %.

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Document Number: 91019 S11-0510-Rev. B, 21-Mar-11

This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF530, SiHF530
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)

ID, Drain Current (A)

ID, Drain Current (A)

101

VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V Top

25 C 101 175 C

100

4.5 V 100 20 s Pulse Width TC = 25 C 10-1 100 101

20 s Pulse Width VDS = 50 V 4

91019_03

10

91019_01

VDS, Drain-to-Source Voltage (V)

VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

Fig. 1 - Typical Output Characteristics, TC = 25 C

RDS(on), Drain-to-Source On Resistance (Normalized)

ID, Drain Current (A)

101

VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V Top

3.5 3.0 2.5 2.0 1.5 1.0 0.5

ID = 14 A VGS = 10 V

4.5 V

100 20 s Pulse Width TC = 175 C 10-1 100 101

0.0 - 60- 40 - 20 0

20 40 60 80 100 120 140 160 180

91019_02

VDS, Drain-to-Source Voltage (V)

91019_04

TJ, Junction Temperature (C)

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 2 - Typical Output Characteristics, TC = 175 C

Document Number: 91019 S11-0510-Rev. B, 21-Mar-11

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This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF530, SiHF530
Vishay Siliconix

1400 1200

Capacitance (pF)

1000 800 600 400 200 0 100

ISD, Reverse Drain Current (A)

VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Ciss

101

175 C 25 C

Coss

Crss

100 VGS = 0 V

101

0.4
91019_07

0.8

1.2

1.6

2.0

91019_05

VDS, Drain-to-Source Voltage (V)

VSD, Source-to-Drain Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

20

VGS, Gate-to-Source Voltage (V)

ID = 14 A VDS = 80 V VDS = 50 V

103
5 2

ID, Drain Current (A)

16

Operation in this area limited by RDS(on) 10 s 100 s 1 ms 10 ms

102
5 2

12

VDS = 20 V

10
5 2

1
5

4
For test circuit see figure 13

0 0
91019_06

0.1 0.1
91019_08

TC = 25 C TJ = 175 C Single Pulse

2 5

10

15

20

25

10

102

103

QG, Total Gate Charge (nC)

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

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Document Number: 91019 S11-0510-Rev. B, 21-Mar-11

This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF530, SiHF530
Vishay Siliconix

VDS 14 12 RG VGS

RD

D.U.T. + - VDD

ID, Drain Current (A)

10 8 6 4 2 0 25 50 75 100 125 150 175 VDS 90 %

10 V
Pulse width 1 s Duty factor 0.1 %

Fig. 10a - Switching Time Test Circuit

91019_09

TC, Case Temperature (C)

10 % VGS td(on) tr td(off) tf

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10b - Switching Time Waveforms

10

Thermal Response (ZthJC)

0 - 0.5 0.2 0.1 PDM t1 Single Pulse (Thermal Response) t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 0.1 1 10

0.1

0.05 0.02 0.01

10-2 10-5
91019_11

10-4

10-3

t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91019 S11-0510-Rev. B, 21-Mar-11

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This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF530, SiHF530
Vishay Siliconix

L Vary tp to obtain required IAS RG VDS

VDS tp VDD

D.U.T IAS

+ -

V DD

VDS

10 V tp 0.01

IAS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

200

EAS, Single Pulse Energy (mJ)

160

ID 5.7 A 9.9 A Bottom 14 A Top

120

80

40 VDD = 25 V 25 50 75 100 125 150 175

91019_12c

Starting TJ, Junction Temperature (C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator Same type as D.U.T.

50 k
12 V

10 V QGS

QG
0.2 F

0.3 F

QGD D.U.T.

+ -

VDS

VG

VGS
3 mA

Charge
IG ID Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform

Fig. 13b - Gate Charge Test Circuit

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Document Number: 91019 S11-0510-Rev. B, 21-Mar-11

This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF530, SiHF530
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer

D.U.T.

Rg

dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor D D.U.T. - device under test

+ VDD

Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va

D.U.T. lSD waveform Reverse recovery current

Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt

VDD

Re-applied voltage Inductor current

Body diode forward drop

Ripple 5 % Note a. VGS = 5 V for logic level devices

ISD

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91019.

Document Number: 91019 S11-0510-Rev. B, 21-Mar-11

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This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information
www.vishay.com

Vishay Siliconix

TO-220AB
E A

MILLIMETERS DIM.
F

INCHES MIN. 0.167 0.027 0.047 0.014 0.585 0.395 0.095 0.192 0.045 0.240 0.095 0.526 0.131 0.139 0.102 MAX. 0.183 0.040 0.068 0.024 0.610 0.414 0.105 0.208 0.055 0.255 0.115 0.552 0.150 0.155 0.118

MIN. 4.25 0.69 1.20 0.36 14.85 10.04 2.41 4.88 1.14 6.09 2.41 13.35 3.32 3.54 2.60

MAX. 4.65 1.01 1.73 0.61 15.49 10.51 2.67 5.28 1.40 6.48 2.92 14.02 3.82 3.94 3.00

A b b(1) c D E

P H(1) D Q

e e(1) F H(1)
1
L(1)

J(1) L L(1)
M* b(1)

P Q

ECN: T13-0724-Rev. O, 14-Oct-13 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM
C

b e J(1) e(1)

Revison: 14-Oct-13

Document Number: 71195 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice

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Vishay

Disclaimer
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.

Revision: 02-Oct-12

Document Number: 91000