Lovely Professional University, Punjab

Course Code ECE206 Course Category Course Title ELECTRONIC DEVICES AND CIRCUITS Courses with conceptual focus Course Planner 15699::Manjit Lectures 3.0 Tutorials Practicals Credits 0.0 0.0 3.0

TextBooks Sr No T-1 Title Integrated Electronics: Analog & Digital Circuit Systems Reference Books Sr No R-1 R-2 R-3 R-4 R-5 R-6 Other Reading Sr No OR-1 OR-2 OR-3 OR-4 OR-5 OR-6 OR-7 Journals articles as Compulsary reading (specific articles, complete reference) http://forum.jntuworld.com/showthread.php?3988-Electronics-devices-and-Circuits(EDC)-Notes-All-8-Units , http://freedownloadpdfonlinesoftcopy.blogspot.in/2012/12/electronic-devices-and-circuits-by.html , http://www.kinindia.com/university/electric-circuits-and-electron-devices-notes-ec2151-eced/ , http://ebookcut.com/search/ebook/pdf/electronics-circuits-and-electronics-devices-lecture-notes.html , http://engineeringppt.blogspot.in/2011/08/electronic-devices-and-circuits.html , http://www.vidyarthiplus.com/vp/attachment.php?aid=7577 , http://eng.upm.edu.my/~mariam/KKK%203201/notes_kkk3201.html , Title Semiconductor Physics and Devices (IRWIN) Microelectronic Devices Solid State Electronic Devices Microelectronics Microelectronic Circuits Author D. A. Neamen E.S. Yang B.G. Streetman J. Millman and A. Grabel Edition 9th 3rd 4th 3rd 4th Year 2008 1997 1988 1995 1987 1991 Publisher Name Pearson Times Mirror High Education Group Mc graw Hill Prentice Hall McGraw-Hill Saunders College Pub. Electronic Devices & Circuits Theory Robert L. Boylestad Author Jacob Millman & Halkias Edition 2nd Year 2005 Publisher Name Mc graw Hill

A.S. Sedra and K.C. Smith 3rd

Relevant Websites Sr No RW-1 RW-2 RW-3 (Web address) (only if relevant to the course) http://www.sli.ece.ufl.edu/eel6383/Chapter11.pdf http://en.wikipedia.org/wiki/Capacitance_voltage_profiling http://www.home.agilent.com/upload/cmc_upload/All/59536939.pdf?&cc=IN&lc=eng Salient Features PN homo and hetro junction CV Characterstics CV Characterstics

RW-4 RW-5 RW-6 RW-7 RW-8 RW-9 RW-10

http://www.ecse.rpi.edu/~schubert/2006-Course-ECSE-2210-MicroelectronicsTechnology/MT-21-Ch12-2.pdf http://solar.njit.edu/~leej/lecture/ph641/Ch04_summary.pdf http://whites.sdsmt.edu/classes/ee320/notes/320lecture4.pdf http://ee.eng.usm.my/eeacad/arjuna/Electronic%20device%20lecture3.pdf

Transient response FERMI DIRAC Small signal diode model Application of diodes

http://www.prenhall.com/howe3/microelectronics/pdf_folder/lectures/mwf/lecture12.fm MOSFET characteristics and small signal models 5.pdf http://www.ece.cmu.edu/~ee321/spring99/LECT/lect22apr9.pdf http://whites.sdsmt.edu/classes/ee320/notes/320lecture18.pdf Common source amplifier Common Emitter Amplifier

LTP week distribution: (LTP Weeks) Weeks before MTE Weeks After MTE Spill Over 7 7 3

Detailed Plan For Lectures

Week Number Lecture Number Broad Topic(Sub Topic) Chapters/Sections of Text/reference books Other Readings, Lecture Description Relevant Websites, Audio Visual Aids, software and Virtual Labs OR-2 OR-4 The lecture explains DC or Static characteristics of ideal two terminal and three terminal devices The lecture explains DC or Static characteristics of ideal two terminal and three terminal devices The lecture explains DC or Static characteristics of ideal two terminal and three terminal devices The lecture describes Small signal models of nonlinear devices Learning Outcomes Pedagogical Tool Demonstration/ Case Study / Images / animation / ppt etc. Planned

Week 1

Lecture 1

Modeling Devices(Static characteristics of ideal two terminal and three terminal devices) Modeling Devices(Static characteristics of ideal two terminal and three terminal devices) Modeling Devices(Static characteristics of ideal two terminal and three terminal devices) Modeling Devices(Small signal models of non-linear devices)

T-1:3.4 R-1:1.8

A Student will come to know about basic two terminal and three terminal device and its static chracterstics A Student will come to know about basic two terminal and three terminal device and its static chracterstics A Student will come to know about basic two terminal and three terminal device and its static chracterstics A Student will learn about Small signal models of nonlinear devices discussion

Lecture 2

T-1:3.4 R-1:1.8

OR-2 OR-4

Lecture 3

T-1:3.4 R-1:1.8

OR-2 OR-4

Week 2

Lecture 4

T-1:3.13 R-2:8.2

Week 2

Lecture 5

Modeling Devices(Small signal models of non-linear devices)

T-1:3.13 R-2:8.2

The lecture describes Small signal models of nonlinear devices OR-1 OR-3 Poissons and continuity equations

A Student will learn about Small signal models of nonlinear devices A Student will learn about Semiconductor Equations A Student will learn about Semiconductor Equations A Student will learn about FermiDirac statistics and Boltzmann approximation A Student will learn about FermiDirac statistics and Boltzmann approximation A student will learn basic construction of semiconductor diodes and its junction formation A student will learn basic construction of semiconductor diodes and its junction formation A student will learn junctions of semiconductor diode A student will learn junctions of semiconductor diode A student will learn CV chracterstics of smiconductor diode

discussion

Lecture 6

Introduction to Semiconductor Equations and Carrier Statistics (Poisson's and continuity equations) Introduction to Semiconductor Equations and Carrier Statistics (Poisson's and continuity equations) Introduction to Semiconductor Equations and Carrier Statistics (Fermi-Dirac statistics and Boltzmann approximation to the Fermi-Dirac statistics) Introduction to Semiconductor Equations and Carrier Statistics (Fermi-Dirac statistics and Boltzmann approximation to the Fermi-Dirac statistics) Semiconductor Diode(Barrier formation in metal-semiconductor junctions)

T-1:3.1 2.10 R-2:6.2.1

Week 3

Lecture 7

T-1:3.1 2.10 R-2:6.2.1

OR-1 OR-3

Poissons and continuity equations

Lecture 8

T-1:19.2 R-2:3.5.2-3.5.3 3.3

RW-5

FermiDirac statistics and Boltzmann approximation to the FermiDirac statistics FermiDirac statistics and Boltzmann approximation to the FermiDirac statistics Quiz,Test 1

animation for the fermi dirac stastics

Lecture 9

T-1:19.2 R-2:3.5.2-3.5.3 3.3

RW-5

animation for the fermi dirac stastics

Week 4

Lecture 10 Lecture 11 T-1:3.1-3.3 R-1:1.1-1.2 R-2:7.1-7.2

Barrier formation in metalsemiconductor junctions

discussion

Lecture 12

Semiconductor Diode(Barrier formation in metal-semiconductor junctions)

T-1:3.1-3.3 R-1:1.1-1.2 R-2:7.1-7.2

Barrier formation in metalsemiconductor junctions

discussion

Week 5

Lecture 13

Semiconductor Diode(PN homoand hetero- junctions) Semiconductor Diode(PN homoand hetero- junctions) Semiconductor Diode(CV characteristics and dopant profiling) Semiconductor Diode(IV characteristics)

R-2:9.3

RW-1

PN homo and hetero junctions PN homo and hetero junctions CV characteristics and dopant profiling IV characteristics of Semiconductor Diodes

Lecture 14

R-2:9.3

RW-1

Lecture 15

T-1:3.9 R-1:1.11 T-1:3.4-3.5 R-1:1.3 R-2:8.1

RW-2 RW-3

Week 6

Lecture 16

A student will learn IV Animations of the VI characterstics of characteristics of diode semiconductor iode

Week 6

Lecture 17

Semiconductor Diode(Small signal models of diodes)

T-1:4.3 R-1:1.9 R-2:8.2 T-1:4.3 R-1:1.9 R-2:8.2

RW-6

Small signal models of diodes

A student will learn small signal model of semiconductor diodes A student will learn small signal model of semiconductor diodes

Lecture 18

Semiconductor Diode(Small signal models of diodes)

RW-6

Small signal models of diodes

Week 7

Lecture 19 Lecture 20 Semiconductor Diode(Some Applications of diodes) T-1:3.12-3.13 R-1:2.7-2.11 R-2:14.3-14.5 8.6 RW-7

Quiz,Test 2 Applications of diodes to A student will learn Discussion be taught in Lecture 20 some basic application of diodes and their uses Lecture 21 Reserved for contingency plan In Lecture 21 students will be able to do the revision of the course before MTE Applications of diodes to A student will learn Discussion be taught in Lecture 20 some basic application of diodes and their uses Lecture 21 Reserved for contingency plan In Lecture 21 students will be able to do the revision of the course before MTE

Lecture 21

Semiconductor Diode(Some Applications of diodes)

T-1:3.12-3.13 R-1:2.7-2.11 R-2:14.3-14.5 8.6

RW-7

MID-TERM
Week 8 Lecture 22 Field Effect Devices(JFET/HFET) T-1:10.1-10.3 R-1:5.1-5.2 R-2:13.1 T-1:10.5 R-2:11.1-11.3 T-1:10.5 R-2:11.1-11.3 T-1:10.4 R-2:13.4 T-1:10.4 R-2:13.4 R-2:11.2 OR-5 OR-6 OR-7 Basic introduction to JFET HFET A student will learn basic construction of JFET A student will learn basic construction AND operation of MOSFET A student will learn basic construction AND operation of MOSFET animations of the diagram of JFET

Lecture 23

Field Effect Devices(MIS structures and MOSFET operation) Field Effect Devices(MIS structures and MOSFET operation) Field Effect Devices(JFET characteristics and small signal models) Field Effect Devices(JFET characteristics and small signal models) Field Effect Devices(MOS capacitor CV and concept of accumulation)

MIS structures and MOSFET operation MIS structures and MOSFET operation

Lecture 24

Week 9

Lecture 25

JFET characteristics and A student will learn animations of the small signal models JFET characteristics characteristics of small and small signal models signal model JFET characteristics and A student will learn animations of the small signal models JFET characteristics characteristics of small and small signal models signal model MOS capacitor CV and A student will brainstorming concept of accumulation understand the concept of accumulation and CV characterstics of MOS

Lecture 26

Lecture 27

Week 10

Lecture 28

Field Effect Devices(MOS capacitor CV and concept of accumulation)

R-2:11.2

MOS capacitor CV and A student will brainstorming concept of accumulation understand the concept of accumulation and CV characterstics of MOS Depletion and inversion mode A student will learn basi operational modes of MOSFET Discussion

Lecture 29

Field Effect Devices(Depletion and inversion)

T-1:10.5-10.7 R-1:5.7 R-2:11.3-11.4 T-1:10.5-10.7 R-1:9.10 -9.11 R-2:11.3-11.4 T-1:10.5-10.7 R-1:9.10 -9.11 R-2:11.3-11.4 T-1:5.1-5.6 5.12 R-1:3.1-3.3 R-2:10.5.1 T-1:5.1-5.6 5.12 R-1:3.1-3.3 R-2:10.5.1 RW-8

Lecture 30

Field Effect Devices(MOSFET characteristics and small signal models) Field Effect Devices(MOSFET characteristics and small signal models) Bipolar transistors(IV characteristics and elers-Moll model) Bipolar transistors(IV characteristics and elers-Moll model)

MOSFET characteristics A student will learn and small signal models MOSFET characteristics and small signal models MOSFET characteristics A student will learn and small signal models MOSFET characteristics and small signal models IV characteristics and elersMoll model A student will learn BJT IV characteristics and elersMoll model A student will learn BJT IV characteristics and elersMoll model

Week 11

Lecture 31

RW-8

Discussion

Lecture 32

Lecture 33

IV characteristics and elersMoll model

Week 12

Lecture 34 Lecture 35 Bipolar transistors(Small signal models) Bipolar transistors(Small signal models) Bipolar transistors(Charge storage and transient response) Bipolar transistors(Charge storage and transient response) Discrete transistor amplifiers (Common emitter and common source amplifiers) Discrete transistor amplifiers (Common emitter and common source amplifiers) T-1:8.3-8.5

Quiz,Test 3 Small signal models of Bipolar transistors Small signal models of Bipolar transistors RW-4 Charge storage and transient response Charge storage and transient response Common emitter and common source amplifiers Common emitter and common source amplifiers A student will learn animations containing Small signal models of the small signal model BJT A student will learn animations containing Small signal models of the small signal model BJT A student will learn transient response and charge storage of BJTs A student will learn transient response and charge storage of BJTs A student will learn basic configuration of BJT and FET A student will learn basic configuration of BJT and FET brainstorming

Lecture 36

T-1:8.3-8.5

Week 13

Lecture 37

T-1:5.5

Lecture 38

T-1:5.5

RW-4

Lecture 39

T-1:5.6-5.10 10.7 R-1:8.5 9.6 R-2:10.1-10.2 T-1:5.6-5.10 10.7 R-1:8.5 9.6 R-2:10.1-10.2

RW-9 RW-10

Week 14

Lecture 40

RW-9 RW-10

brainstorming

Week 14

Lecture 41

Discrete transistor amplifiers (Emitter and source followers)

T-1:5.6-5.10 10.7 R-1:9.6 8.5 R-2:10.1-10.2

Emitter and source A student will learn followers to be taught in basic configuration of lecure no 41 BJT and FET Lecture 42 will be In Lecture 42 the reserved for contingency students will be able to do the revision of all the course taught after MTE

Discussion

Lecture 42

Discrete transistor amplifiers (Emitter and source followers)

T-1:5.6-5.10 10.7 R-1:9.6 8.5 R-2:10.1-10.2

Emitter and source A student will learn followers to be taught in basic configuration of lecure no 41 BJT and FET Lecture 42 will be In Lecture 42 the reserved for contingency students will be able to do the revision of all the course taught after MTE

Discussion

SPILL OVER
Week 15 Lecture 43 Lecture 44 Lecture 45 Spill Over Spill Over Spill Over

Scheme for CA:

Component Quiz,Test Frequency 2 Total :Out Of 3 Each Marks Total Marks 10 10 20 20

Details of Academic Task(s)

AT No. Objective Topic of the Academic Task Nature of Academic Task (group/individuals/field work Individual Evaluation Mode Allottment / submission Week 10 / 11

Test 2

To test the students JFET/HFET, MIS structures and MOSFET operation, JFET knowledge regarding characteristics and small signal models, MOS capacitor CV and the course concept of accumulation, Depletion and inversion, MOSFET characteristics and small signal models,IV characteristics and elers-Moll model

Each question carry 5 marks or multiple of 5.

Quiz,Test 1

To test the student graasping nd learning capability in class

Unit-1 and Unit-2 to be covered in the test

Individual

The test is of 30 marks and each question carries 5 marks or multiple of 5 .The test should be conceptual and numerical based The total quiz is of 30 marks .Each question carries one marks and negative marking is also their by deduction of 25% marks after each wrong answer

2/4

Quiz,Test 2

To prepare student for higher competitive exams

UNIT-3

Individual

5/6