H5N3011P

Silicon N Channel MOS FET High Speed Power Switching

REJ03G0385-0200 Rev.2.00 Aug.05.2004

Features
Low on-resistance Low leakage current High speed switching

Outline
TO-3P
D

1. Gate 2. Drain (Flange) 3. Source

Absolute Maximum Ratings

(Ta = 25C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 ch-c Tch Tstg Ratings 300 30 88 176 88 176 30 54 150 0.833 150 55 to +150 Unit V V A A A A A mJ W C/W C C

Rev.2.00, Aug.05.2004, page 1 of 6

H5N3011P

Electrical Characteristics
(Ta = 25C)
Item Drain to Source breakdown voltage Zero Gate voltage Drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 300 3.0 33 Typ 56 0.042 5000 640 65 60 370 200 280 95 25 40 1.0 260 2.5 Max 1 0.1 4.5 0.048 1.5 Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns C Test conditions ID = 10 mA, VGS = 0 VDS = 300 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 44 A, VDS = 10 V Note4 ID = 44 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 44 A VGS = 10 V RL = 3.4 Rg = 10 VDD = 240 V VGS = 10 V ID = 88 A IF = 88 A, VGS = 0 Note4 IF = 88 A, VGS = 0 diF/dt = 100 A/s

Rev.2.00, Aug.05.2004, page 2 of 6

H5N3011P

Main Characteristics
Power vs. Temperature Derating 200
Pch (W)

1000 300
ID (A)

Maximum Safe Operation Area

100 30 10
Operation in

150

1m

10

10 0 s s

Channel Dissipation

100

Drain Current

3 this area is 1 limited by RDS(on) 0.3 0.1 0.03 0.01 Ta = 25C 1 DC Operation (Tc = 25C)
PW = 10 ms (1shot)

50

50

100

150 Tc (C)

200

Case Temperature

100 300 1000 30 3 10 Drain to Source Voltage VDS (V) Typical Transfer Characteristics

Typical Output Characteristics 100 10 V 8V Pulse Test 6V 100

VDS = 10 V Pulse Test 80

ID (A) Drain Current

ID (A)

80

60 5.5 V

60

Drain Current

40

40

20

VGS = 5 V

20

Tc = 75C

25C 25C 10 8 VGS (V)

4 8 12 Drain to Source Voltage

20 16 VDS (V)

2 4 6 Gate to Source Voltage

Drain to Source Saturation Voltage vs. Gate to Source Voltage 8

Drain to Source Saturation Voltage VDS(on) (V) Drain to Source on State Resistance RDS(on) ()

Pulse Test

Static Drain to Source on State Resistance vs. Drain Current 0.1 VGS = 10 V, 15 V 0.05

6 ID = 88 A 4

0.02 0.01

0.005

44 A 20 A

0.002 0.001 1 3 Pulse Test 10 30 100 300 Drain Current ID (A) 1000

12 4 8 Gate to Source Voltage

16 20 VGS (V)

Rev.2.00, Aug.05.2004, page 3 of 6

H5N3011P
Static Drain to Source on State Resistance vs. Temperature 0.2 VGS = 10 V Pulse Test 0.16 ID = 88 A 44 A 0.08 20 A 0.04 0 25 Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)

Static Drain to Source on State Resistance RDS(on) ()

100 30 10 3 1 0.3 0.1 0.1 75C 25C Tc = 25C

0.12

VDS = 10 V Pulse Test 0.3 1 3 10 ID (A) 30 100

25

50

75

100 125 150 Tc (C)

Case Temperature

Drain Current

1000
Reverse Recovery Time trr (ns)

Body-Drain Diode Reverse Recovery Time

100000 30000

Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss

500
Capacitance C (pF)

200 100 50 20 10 5 2 1 0.1 di / dt = 100 A / s VGS = 0, Ta = 25C 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) Dynamic Input Characteristics 400 16 VDD = 50 V 100 V 240 V VDS VGS
VGS (V)

10000 3000 1000 300 100 30 10

Coss

Crss

50 100 150 Drain to Source Voltage VDS (V) Switching Characteristics VGS = 10 V, VDD = 150 V PW = 5 s, duty < 1 % RG = 10

10000

VDS (V)

ID = 88 A 300 12

Switching Time t (ns)

Drain to Source Voltage

Gate to Source Voltage

1000

tf td(off)

tr

200

100

tf td(on) tr

100

VDD = 240 V 100 V 50 V 40 80 120 160

0 200

10 0.1

0.3

Gate Charge

Qg (nC)

1 3 Drain Current

10 30 ID (A)

100

Rev.2.00, Aug.05.2004, page 4 of 6

H5N3011P
Reverse Drain Current vs. Source to Drain Voltage 100
IDR (A) Gate to Source Cutoff Voltage VGS(off) (V)

Gate to Source Cutoff Voltage vs. Case Temperature 5 VDS = 10 V ID = 10 mA 1 mA

80 60 VGS = 0 V 40 10 V 5V Pulse Test 0 0.4 0.8 1.2 1.6 VSD (V) 2.0 Source to Drain Voltage

Reverse Drain Current

3 0.1 mA 2

20

1 0 -25

25

50

75

100 125 150 Tc (C)

Case Temperature

Normalized Transient Thermal Impedance vs. Pulse Width

Normalized Transient Thermal Impedance s (t)

3 Tc = 25C 1 D=1 0.5 0.3

0.2

0.1

0.1
0.05

ch c(t) = s (t) ch c ch c = 0.833C/W, Tc = 25C

PDM

D=
PW T

0.03

0.02 1 0.0
1s

PW T

p ot

uls

0.01 10

100

1m

10 m 100 m Pulse Width PW (s)

10

Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Vin 10 V V DD = 150 V Vin Vout 10% 10% Vout Monitor

Waveform

90%

10% 90% td(off) tf

90% td(on) tr

Rev.2.00, Aug.05.2004, page 5 of 6

H5N3011P

Package Dimensions
As of January, 2003
5.0 0.3 15.6 0.3 1.0
3.2 0.2

4.8 0.2 1.5

Unit: mm

0.5

14.9 0.2

19.9 0.2

1.6 1.4 Max 2.0 2.8 18.0 0.5

1.0 0.2

2.0

0.6 0.2

3.6

0.9 1.0

5.45 0.5

5.45 0.5
Package Code JEDEC JEITA Mass (reference value) TO-3P Conforms 5.0 g

Ordering Information
Part Name H5N3011P-E Quantity 30 pcs Plastic magazine Shipping Container

Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.

Rev.2.00, Aug.05.2004, page 6 of 6

0.3

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