CMOS INVERTER

Digital Integrated Circuits

Inverter

Prentice Hall 1995

The CMOS Inverter: A First Glance

VDD

Vin

Vout CL

Digital Integrated Circuits

Inverter

Prentice Hall 1995

CMOS Inverters
VDD PMOS

1.2m =2 In Out Metal1 Polysilicon

NMOS GND

Digital Integrated Circuits

Inverter

Prentice Hall 1995

Switch Model of CMOS Transistor

|VGS|

Ron

|VGS | < |VT |

Digital Integrated Circuits Inverter

|VGS | > |VT|

Prentice Hall 1995

CMOS Inverter: Steady State Response

V DD V DD

R on

VOH = VDD
V out Vout

VOL= 0

R on

VM = f(R onn ,Ronp )

Vin = V DD

Vin = 0

Digital Integrated Circuits

Inverter

Prentice Hall 1995

CMOS Inverter: Transient Response

VDD

t pHL = f(Ron.CL ) = 0.69 Ron CL

Vout CL Ron
1

Vout VDD

ln(0.5)

0.5 0.36

Vin = V DD RonC L
Digital Integrated Circuits Inverter

Prentice Hall 1995

CMOS Properties
Full rail-to-rail swing l Symmetrical VTC l Propagation delay function of load capacitance and resistance of transistors l No static power dissipation l Direct path current during switching
l

Digital Integrated Circuits

Inverter

Prentice Hall 1995

The MOS Transistor

Polysilicon Aluminum

Digital Integrated Circuits

Inverter

Prentice Hall 1995

MOS Transistors Types and Symbols

D D G S G

NMOS Enhancement NMOS Depletion

D D

G S S

PMOS Enhancement

NMOS with Bulk Contact

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Digital Integrated Circuits

Inverter

Threshold Voltage: Concept

S + VGS D

n+

n+

n-channel p-substrate B

Depletion Region

Digital Integrated Circuits

Inverter

Prentice Hall 1995

The Threshold Voltage

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Inverter

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The Body Effect

0.9 0.85 0.8 0.75 0.7

V (V)

0.65 0.6 0.55 0.5 0.45 0.4 -2.5

-2

-1.5

-1

-0.5

V BS (V)
Digital Integrated Circuits Inverter Prentice Hall 1995

Current-Voltage Relations A good oltransistor

6 x 10
-4

VGS= 2.5 V

Resistive
4 I (A)

Saturation
VGS= 2.0 V

VDS = VGS - VT
VGS= 1.5 V VGS= 1.0 V

Quadratic Relationship

0.5

1 VDS (V)

1.5

2.5

Digital Integrated Circuits

Inverter

Prentice Hall 1995

Transistor in Linear
S VGS G n+ + L x VDS D n+ ID

V ( x)

p -substrate B

MOS transistor and its bias conditions

Digital Integrated Circuits Inverter Prentice Hall 1995

Transistor in Saturation
VGS VDS > VGS - VT D

G S n+
-

VGS - VT

n+

Pinch-off

Digital Integrated Circuits

Inverter

Prentice Hall 1995

Current-Voltage Relations Long-Channel Device

Digital Integrated Circuits

Inverter

Prentice Hall 1995

A model for manual analysis

Digital Integrated Circuits

Inverter

Prentice Hall 1995

Current-Voltage Relations The Deep-Submicron Era

2.5 x 10
-4

Early Saturation
2

VGS= 2.5 V

VGS= 2.0 V
1.5 I D (A)

VGS= 1.5 V

Linear Relationship

0.5

VGS= 1.0 V

0.5

1 VDS (V)

1.5

2.5

Digital Integrated Circuits

Inverter

Prentice Hall 1995

Velocity Saturation
n ( m/s) sat = 105
Constant velocity

Constant mobility (slope = )

c = 1.5
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(V/m)
Prentice Hall 1995

Perspective
ID
Long-channel device VGS = V DD Short-channel device

V DSAT
Digital Integrated Circuits

VGS - V T
Inverter

V DS
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10

ID versus VGS
6 5 2 4
I D (A)

x 10

-4

x 10 2.5

-4

quadratic

linear
1.5
ID (A)

3 2 1 0 0

0.5

quadratic
0.5 1
VGS(V)

1.5

2.5

0 0

0.5

1
VGS (V)

1.5

2.5

Long Channel
Digital Integrated Circuits Inverter

Short Channel
Prentice Hall 1995

A model for manual analysis

Digital Integrated Circuits

Inverter

Prentice Hall 1995

11

Simple Model versus SPICE

2.5 x 10
-4

1.5

I D (A)
1 0.5 0 0

0.5

1.5

2.5

VDS (V)
Digital Integrated Circuits Inverter Prentice Hall 1995

A PMOS Transistor
0 x 10
-4

VGS = -1.0V -0.2 VGS = -1.5V -0.4

ID (A)

VGS = -2.0V

-0.6

Assume all variables negative!

-0.8

VGS = -2.5V

-1 -2.5

-2

-1.5
VDS (V)

-1

-0.5

Digital Integrated Circuits

Inverter

Prentice Hall 1995

12

Transistor Model for Manual Analysis

Digital Integrated Circuits

Inverter

Prentice Hall 1995

The Transistor as a Switch

VGS V T Ron S
ID

D
Rmid R0

V GS = VDD

V DS VDD/2 VDD

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Inverter

Prentice Hall 1995

13

The Transistor as a Switch

7 x 10
5

(Ohm) R

eq

0 0.5

1.5

2.5

VDD (V)
Digital Integrated Circuits Inverter Prentice Hall 1995

The Transistor as a Switch

Digital Integrated Circuits

Inverter

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14

The Sub-Micron MOS Transistor

l Thres hold

Variations l Subthreshold Conduction l Paras itic Resistances l Latch-up

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Inverter

Prentice Hall 1995

Threshold Variations
VT Long-channel threshold VT Low V DS threshold

L Threshold as a function of the length (for low V DS )

VDS Drain-induced barrier lowering (for low L)

Digital Integrated Circuits

Inverter

Prentice Hall 1995

15

Sub-Threshold Conduction
10
-2

Linear
10
-4

10
I D (A)

-6

Quadratic

The Slope Factor

10

-8

10

-10

Exponential VT
0 0.5 1
VGS (V)

Typical values for S: 60 .. 100 mV/decade

1.5 2 2.5

10

-12

Digital Integrated Circuits

Inverter

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Parasitic Resistances
Polysilicon gate G VGS,eff S RS RD Drain D W LD Drain contact

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Inverter

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16

Future Perspectives

25 nm MOS transistor (Folded Channel)

Digital Integrated Circuits Inverter Prentice Hall 1995

Voltage Transfer Characteristic

Digital Integrated Circuits

Inverter

Prentice Hall 1995

17

PMOS Load Lines

IDn V in = V DD -VGSp IDn = - IDp V out = VDD -VDSp

Vout IDp Vin=0 Vin=3 VDSp VGSp=-2 VGSp=-5 Vin = V DD-VGSp IDn = - IDp Vout = VDD -VDSp VDSp IDn IDn Vin=0 Vin=3 Vout

Digital Integrated Circuits

Inverter

Prentice Hall 1995

CMOS Inverter Load Characteristics

In,p
Vin = 0 PMOS Vin = 5 NMOS

Vin = 4

Vin = 1

Vin = 4

Vin = 3 Vin = 4 Vin = 5

Vin = 2 Vin = 3

Vin = 3 Vin = 2

Vin = 2 Vin = 1 Vin = 0

Digital Integrated Circuits

Inverter

Prentice Hall 1995

18

CMOS Inverter VTC

Vout 5

NMOS off PMOS lin NMOS sat PMOS lin NMOS sat PMOS sat NMOS lin PMOS sat

NMOS lin PMOS off 5 Vin

Digital Integrated Circuits

Inverter

Prentice Hall 1995

Simulated VTC

4.0

V out (V) 2.0 0.0 0.0

1.0

2.0 Vin (V)

Inverter

3.0

4.0

5.0
Prentice Hall 1995

Digital Integrated Circuits

19