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MRF8S21100HR3 MRF8S21100HSR3
2110-2170 MHz, 24 W AVG., 28 V W-CDMA, LTE LATERAL N-CHANNEL RF POWER MOSFETs
! Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 138 Watts CW (1) Output Power (3 dB Input Overdrive from Rated Pout) ! Typical Pout @ 1 dB Compression Point ! 100 Watts CW Features ! 100% PAR Tested for Guaranteed Output Power Capability ! Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters ! Internally Matched for Ease of Use ! Integrated ESD Protection ! Greater Negative Gate--Source Voltage Range for Improved Class C Operation ! Designed for Digital Predistortion Error Correction Systems ! Optimized for Doherty Applications ! RoHS Compliant ! In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 14. Table 1. Maximum Ratings
Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (2,3) CW Operation @ TC = 25#C Derate above 25#C Symbol VDSS VGS VDD Tstg TC TJ CW
Value --0.5, +65 --6.0, +10 32, +0 --65 to +150 150 225 108 0.57
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 2. Continuous use at maximum temperature will affect MTTF. 3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.
MRF8S21100HR3 MRF8S21100HSR3 1
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 24 W Avg., f = 2170 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ '5 MHz Offset. Power Gain Drain Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps "D PAR ACPR IRL 17.2 31.0 5.9 18.3 33.4 6.3 --37.2 --12 20.2 --36.0 --7 dB % dB dBc dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 24 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ '5 MHz Offset. Frequency 2110 MHz 2140 MHz 2170 MHz Gps (dB) 17.9 18.1 18.3 "D (%) 33.0 33.0 33.4 Output PAR (dB) 6.4 6.4 6.3 ACPR (dBc) --38.7 --38.2 --37.2 IRL (dB) --18 --16 --12
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued)
VBWres GF (G (P1dB
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
R2 R1 VGG C3 C5 C6 C8 C9 -C12 VDD + R3 CUT OUT AREA C13 C7 C10 C11 MRF8S21100H Rev 0 Part Number ATC100B6R8CT500XT ATC100B1R6BT500XT ATC100B0R2BT500XT 293D106X9050E2TE3 227CKS050M ATC100B5R6CT500XT CRCW12062K00FKEA CRCW120610R0JNEA AD255A Manufacturer ATC ATC ATC Vishay Illinois Capacitor ATC Vishay Vishay Arlon
C1
C4
C2
TYPICAL CHARACTERISTICS
"D, DRAIN EFFICIENCY (%) VDD = 28 Vdc, Pout = 24 W (Avg.), IDQ = 700 mA 19.5 Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 19 Gps, POWER GAIN (dB) 18.5 18 17.5 17 16.5 16 15.5 ACPR IRL PARC Gps "D Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 20 34.5 34 33.5 33 32.5 --34 --35 ACPR (dBc) --36 --37 --38 2100 2120 2140 2160 2180 2200 --39 2220
15 2060
2080
f, FREQUENCY (MHz)
Figure 2. Output Peak-to-Average Ratio Compression (PARC) Broadband Performance @ Pout = 24 Watts Avg.
--10 --20 --30 --40 --50 --60 IM7--L IM7--U 1 10 TWO--TONE SPACING (MHz) 100
VDD = 28 Vdc, Pout = 36 W (PEP), IDQ = 700 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz IM3--L IM3--U
IM5--U IM5--L
VDD = 28 Vdc, IDQ = 700 mA, f = 2140 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth ACPR "D
TYPICAL CHARACTERISTICS
22 VDD = 28 Vdc, IDQ = 700 mA, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 20 Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF Gps 18 16 2110 MHz 14 12 10 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 2140 MHz 2170 MHz "D ACPR 60 50 "D, DRAIN EFFICIENCY (%) 40 30 2170 MHz 2140 MHz 2110 MHz 20 10 0 200 0 --10 --20 --30 --40 --50 --60 ACPR (dBc)
Figure 5. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power
24 20 16 GAIN (dB) 12 8 4 0 1800 VDD = 28 Vdc Pin = 0 dBm IDQ = 700 mA 1900 2000 2100 2200 2300 2400 2500 Gain 10 5 0 --5 IRL --10 --15 --20 2600 IRL (dB)
f, FREQUENCY (MHz)
VDD = 28 Vdc, IDQ = 700 mA, Pout = 24 W Avg. f MHz 2060 2080 2100 2120 2140 2160 2180 2200 2220 Zsource ) 4.41 -- j6.05 4.38 -- j5.67 4.33 -- j5.29 4.33 -- j4.91 4.33 -- j4.54 4.33 -- j4.17 4.31 -- j3.80 4.32 -- j3.39 4.35 -- j2.99 Zload ) 3.03 -- j3.64 2.96 -- j3.45 2.89 -- j3.26 2.83 -- j3.10 2.75 -- j2.94 2.69 -- j2.75 2.62 -- j2.50 2.65 -- j2.24 2.67 -- j2.04
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network
source
load
Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 2110 2140 2170 P1dB Watts 141 141 138 dBm 51.5 51.5 51.4 166 162 158 P3dB Watts dBm 52.2 52.1 52.0
Test Impedances per Compression Level f (MHz) 2110 2140 2170 P1dB P1dB P1dB Zsource ) 3.50 -- j7.47 4.21 -- j7.53 6.39 -- j8.09 Zload ) 1.65 -- j3.64 1.57 -- j3.70 1.66 -- j3.68
PACKAGE DIMENSIONS
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date Oct. 2010 Mar. 2011 ! Initial Release of Data Sheet ! Corrected VGG(Q) VDD value from 30 Vdc to 28 Vdc in On Characteristics table to reflect actual test measurement condition, p. 2 Description
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MRF8S21100HR3 MRF8S21100HSR3
Document Number: RF Device Data MRF8S21100H Rev. 1, 3/2011 Freescale Semiconductor
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