Title

Film Buffer Layer None a-Al2O3 (0 1 2)

Details
TiO2 (TiI4: 115 C) & (H2O : 20 C20 Pa)

Atomic layer deposition of TiO2 thin films from TiI4and H2O J. Aarik et al (2002)

Substrate PT PDT PS TGPG Thickness Film Buffer Layer

None (TiI4 - N2 Purge - H2O - N2 Purge:2-2-2-2) 445 C250 Pa 100~160 nm TiO2 (TiCI4) & (H2O) None a-Al2O3 (1,-1,0,2)

Atomic layer growth of epitaxial TiO2 thin films from TiCl4 and H2O on a-Al2O3 substrates J. Aarik et al (2002)

Substrate PT PDT PS TGPG Thickness Film Buffer Layer

None (TiCI4 - N2 Purge - H2O - N2 Purge:2-2-2-2) 425~500 C250 Pa ~120 nm SnO2 (SnI4: 115 C) & (O2) None a-Al2O3(0 1 2)

Gas sensing properties of epitaxial SnO2thin films prepared by atomic layer deposition J. Aarik et al (2003)

Substrate PT PDT PS TGPG Thickness Film Buffer Layer

None ? 600 C250 Pa 110 nm HfO2 (HfCl4) & (H2O) None SiO2/Si

Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications E.P. Gusev et al (2003)

Substrate PT PDT PS TGPG Thickness Film Buffer Layer

Forming gas (5% H2 in N2)3 C/s from 100 to 1000 C ? 300 C? 5 nm ZnO (DEZn: 22 C) & (H2O: 22 C) None GaNYSZ

Atomic layer deposition of epitaxial ZnO on GaN and YSZ C. W. Lin et al (2006)

Substrate PT PDT PS TGPG

None (DEZn - N2 Purge - H2O - N2 Purge:0.5-1-5-5) N2:500sccm 300 C6~8 Torr

Thickness

170 / 45 nm

Film Buffer Layer

SnO2 (SnI4: 115 C) & (O2) None -Al2O3 (0 1 2) Substrate cleaned by (75 C) methanol in ultrasonic bath for 5 min None (SnI4 - N2 Purge - O2 - N2 Purge:4-6-4-6)

Growth of SnO2 thin films by atomic layer deposition and chemical vapour deposition: A comparative study J. Sundqvist et al (2006)

Substrate PT PDT PS TGPG Thickness Film Buffer Layer Substrate

600 C1.3KPa ?
HfO2 (HfCl4) & (H2O) None p-In0.13Ga0.87As(MBE)/GaAs(MBE)/p+-GaAs(001)/ Sulfur-passivated(acetone, methanol, HCl, and (NH4)2S with intermediate distilled water cleans) InGaAs layers 500 C for 5 min in N2 ? 320 C? 10.2 nm Al2O3 (TMA: 2*104Torr) & (H2O: 2*104Torr) None 4H-SiC (0001) 1.chemical mechanical polishing process (NovaSiC) on the Si face 2.outgassed at 300 C in vacuum RTA in a N2room temperature 30s then 1100 C for 4 min (TMA - Purge - H2O - Purge:15-60-15-60) 200 C? 5 nm ZnO (DEZn) & (DI H2O) None GaN/Al2O3 GaN/Al2O3 were etched in a solution of hydrochloric acid and digested in solvents None (DEZn - Purge - DI H2O - Purge:?) 300 C? 500 nm

InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition N. Goel et al (2006) PT PDT PS TGPG Thickness Film Buffer Layer Substrate Structural properties of epitaxial Al2O3 (111) thin films on 4H - SiC (0001) C. M. Tanner et al (2007) PT PDT PS TGPG Thickness Film Buffer Layer Substrate Monocrystalline zinc oxide films grown by atomic layer deposition . Wachnicki et al (2009) PT PDT PS TGPG Thickness

Film Buffer Layer Structural Characteristics and Annealing Effect of ZnO Epitaxial Films Grown by Atomic Layer Deposition S. Yang et al (2009) Substrate PT PDT PS TGPG Thickness Film Comparison of dimethylzinc and diethylzinc as precursors for monocrystalline zinc oxide grown by atomic layer deposition method L. Wachnicki et al (2010) Buffer Layer Substrate PT PDT PS TGPG Thickness Film Buffer Layer Heteroepitaxy of single-crystal LaLuO 3 on GaAs(111)A by atomic layer deposition Y. Liu et al (2010) Substrate PT PDT PS TGPG Thickness Film Preparation of Epitaxial HfO2Film (EOT=0.5 nm) on Si Substrate Using Atomic-Layer Deposition of Amorphous Film and Rapid Thermal Crystallization (RTC) in an Abrupt Temperature Gradient S. Migita et al (2010) Buffer Layer Substrate PT PDT PS TGPG Thickness

ZnO (DEZn: 25 C7 torr) & (H2O: 25 C17 torr) no carrier gas None c-Al2O3 DI water/acetone/DI water 5min for each, then N2 dry for c-Al2O3 800 C annealing in O2 for 1.5h (DEZn - N2 Purge - H2O - N2 Purge:5-15-5-15) 200 C1*10-2 torr 52 nm ZnO (DEZn) & (DI water)(DMZn) & (DI water) None GaN/sapphire substrate solvent-cleaned, HCl etched, DI water rinsed, N2 dried None (DEZn - Purge - H2O - Purge:?) , (DMZn - Purge - H2O - Purge:?) 300 C? ? LaLuO3 (lanthanum tris(N,N-diisopropylformamidinate)) & (lutetium tris(N,N-diethylformamidinate)) & (H2O) None GaAs(111) Substrate dipping into an HCl:H2O=1:1solution, then soaking in a 20% (NH4)2S solution for 10 min at room temperature capped with 6 nm ALD-Al2O3, RTA at 700 C for 30s in N2 ? 350 C? 12 nm HfO2 None Si(100)Si(111) HF treatment for Substrate RTC, TaN and poly-si deposited as gate, RTA ? 250 C? 0.5 nm (EOT) k=16~20

Film Electrical and physical characteristics for crystalline atomic layer deposited beryllium oxide thin film on Si and GaAs substrates J.H. Yum et al (2011) Buffer Layer Substrate PT PDT PS TGPG Thickness Film Buffer Layer Epitaxial ALD BeO: Efficient Oxygen Diffusion Barrier for EOT Scaling and Reliability Improvement J. H. Yum et al (2011) Substrate PT PDT PS TGPG Thickness Film Buffer Layer Epitaxial growth of orthorhombic SnO2films on various YSZ substrates by plasma enhanced atomic layer deposition S. Kim et al (2012) PS TGPG Thickness Film Heteroepitaxy of La2O3and La2xYxO3on GaAs (111)A by Atomic Layer Deposition: Achieving Low Interface Trap Density X. Wang et al (2012) Buffer Layer Substrate PT PDT PS TGPG Thickness Substrate PT PDT

BeO (dimethylberyllium) & (H2O) None p-Si(001)GaAs(001) HF treatment for substrates None ? 200 C? 5~10 nm BeO (dimethylberyllium) & (H2O) None p-Si(100) ? RTA at 600 C for 30~60s in N2 ambient ? 250 C0.2~0.3 torr 0.5~1 nm SnO2 (dibutyltin diacetate:40 CAr gas) & (O2 Plasma) 50sccm None YSZ(8 mol% Y2O3stabilized) (100)(110) None None (dibutyltin diacetate - Ar purge - O2 - O2 plasma - Ar purge:3-12-2-10-12)*1000 300 C220 mtorr ~60 nm La1.8Y0.2O3 (lanthanum tris(N,N-diisopropylformamidinate)) & (yttrium tris(N,N-diisopropylacetamidinate)) & (H2O) None GaAs(111)A dipped into a 3 M HCl solution, then soaked in a 10% (NH4)2S solution for 20 min RTA at 800 C for 30s in N2 La2O3*3cyc + Y2O3*1cyc 300 C? ?

Film Buffer Layer A Facile Route for Producing Single-Crystalline Epitaxial Perovskite Oxide Thin Films A. R. Akbashev et al (2013) Substrate PT PDT PS TGPG Thickness Film Buffer Layer Substrate ZnO layers deposited by Atomic Layer Deposition B. Pcz et al (2013) PT PDT PS TGPG Thickness Film Buffer Layer Substrate AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film C. Liu et al (2014) PT PDT PS TGPG Thickness

BiFeO3 (Bi(mmp)3: 135~145 C) & (ferrocene: 90 C) & (Ozone) None SrTiO3 (001) ? Annealed at 700 C ? 250 C? ? ZnO (DEZ) & (H2O) None GaN None None ? 300 C? 40 nm AlN (TMA) & (N2H2) None GaN organic solutions cleaned at room temperature, DI water rinsed, dipped into ammonia solution at 50 C for 5 min 10-nm Al2O3 deposited, PDA at 450 C in N2 for 10 min ? 300 C? 4 nm

Film precursorprecursor carrier gas () PT: Prior-Treatment PDT: Post-Deposition-Treatment PS: Pulse Sequence TG: Growth Temperature PG: Growth Pressure