BA592/BA892...

Silicon RF Switching Diode For band switching in TV/VTR tuners and mobile applications Very low forward resistance (typ. 0.45 @ 3 mA) Small capacitance Pb-free (RoHS compliant) package Qualified according AEC Q101

BA592 BA892/-02L BA892-02V

Type BA592 BA892 BA892-02L BA892-02V

Package SOD323 SCD80 TSLP-2-1 SC79

Configuration single single single, leadless single

LS(nH) 1.8 0.6 0.4 0.6

Marking blue S AA AA A

Maximum Ratings at T A = 25C, unless otherwise specified Parameter Diode reverse voltage Forward current Junction temperature Operating temperature range Storage temperature Symbol VR IF TJ Top TStg Value 35 100 150 -55 ... 125 -55 ... 150 Unit V mA C

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BA592/BA892...
Thermal Resistance Parameter Symbol RthJS 135 120 70 Value Unit

Junction - soldering point1) BA592 BA892, BA892-02V BA892-02L

K/W

Electrical Characteristics at T A = 25C, unless otherwise specified Parameter Symbol Values min. DC Characteristics typ. max.

Unit

Reverse current VR = 20 V Forward voltage IF = 100 mA

1For

IR VF

20 1

nA V

calculation of RthJA please refer to Application Note Thermal Resistance

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BA592/BA892...
Electrical Characteristics at T A = 25C, unless otherwise specified Parameter AC Characteristics Symbol min. Values typ. max. Unit

Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 0 V, f = 100 MHz Reverse parallel resistance VR = 0 V, f = 100 MHz Forward resistance IF = 3 mA, f = 100 MHz IF = 10 mA, f = 100 MHz Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3mA, RL = 100 I-region width Insertion loss1) IF = 0.1 mA, f = 1.8 GHz IF = 3 mA, f = 1.8 GHz IF = 10 mA, f = 1.8 GHz Isolation1) VR = 0 V, f = 100 MHz VR = 0 V, f = 470 MHz VR = 0 V, f = 1 GHz
1BA892-02L

CT 0.65 0.6 RP rf rr

pF 0.92 0.85 1 100 1.4 1.1 k

0.45 0.36 120

0.7 0.5 ns

WI IL

3 0.1 0.5 0.4 23.5 10.5 5.5

m dB

ISO -

in series configuration, Z = 50

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BA592/BA892...
Diode capacitance CT = (VR) Reverse parallel resistance RP = (VR)

f = Parameter
2

f = Parameter
10 3
KOhm 100 MHz

pF

10 2

CT

1.2

Rp
10 1

1 GHz

0.8

1 MHz ... 1 GHz

10 0 0.4

0 0

10

15

20

30

10 -1 0

10

15

20

30

VR

VR

Forward resistance rf = (IF)

Forward current IF = (VF)

f = 100MHz
10 2

TA = Parameter
10 0 A 10 -1

Ohm

10 1

10 -2

IF
10 -3

rf

10

10

-4

-40 C 25 C 85 C 125 C

10 -5

10 -1 -2 10

10

-1

10

10

mA 10

10 -6 0

0.2

0.4

0.6

0.8

1.2

IF

VF

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BA592/BA892...
Insertion loss IL = -|S21|2 = (f) Isolation ISO = -|S21 |2 = (f)

IF = Parameter
BA892-02L in series configuration, Z = 50
0

VR = Paramter
BA892-02L in series configuration, Z = 50
0

dB dB

|S21|2

|S21|2

-10

-0.2

10 mA 3 mA 1 mA 0.1 mA

0V 1V 10 V

-15

-20 -0.3 -25

-0.4 0

0.5

1.5

GHz

-30 0

0.5

1.5

GHz

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Package SC79

BA592/BA892...

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Package SCD80

BA592/BA892...

Package Outline
0.2 0.8 0.1
10MAX.
M

A
+0.05

0.13 -0.03 A
7 1.5 1.3 0.1

2
1.7 0.1

0.7 0.1

Foot Print

1.45

0.35

Marking Layout (Example)

2005, June Date code

0.35

BAR63-02W Type code Cathode marking Laser marking

Standard Packing
Reel 180 mm = 3.000 Pieces/Reel Reel 180 mm = 8.000 Pieces/Reel (2 mm Pitch) Reel 330 mm = 10.000 Pieces/Reel
Standard 4 Reel with 2 mm Pitch 2
0.2

1.45

2.5

0.2 0.05

Cathode marking

1 0.3 0.05

Cathode marking

0.4 0.9

Cathode marking

0.7

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BA592/BA892...
Date Code marking for discrete packages with one digit (SCD80, SC79, SC75 1) ) CES-Code
Month 2 0 03
01 02 03 04 05 06 07 08 09 10 11 12 a b c d e f g h j k l n

2 0 04
p q r s t u v x y z 2 3

2005
A B C D E F G H J K L N

2006
P Q R S T U V X Y Z 4 5

2 0 07
a b c d e f g h j k l n

2008
p q r s t u v x y z 2 3

2009
A B C D E F G H J K L N

2010
P Q R S T U V X Y Z 4 5

2011
a b c d e f g h j k l n

2012
p q r s t u v x y z 2 3

2 0 13
A B C D E F G H J K L N

2014
P Q R S T U V X Y Z 4 5

1) New Marking Layout for SC75, implemented at October 2005.

.
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Package SOD323

BA592/BA892...

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Package TSLP-2-1

BA592/BA892...

10

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BA592/BA892...
Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved.

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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