EE2207 - Electronic devices and circuits lab

LIST OF EXPERIMENTS
EE2207 ELECTRONIC DEVICES AND CIRCUITS LABORATORY (Revised) 1. Characteristics of semiconductor diode and zener diode . 2. Characteristics of transistor under CE, CB and CC . 3. Characteristics of FET . 4. Characteristics of UJT . 5. Characteristics of SC , !"#C and T "#C. $. %hotodiode, %hototransistor characteristics and stud& of 'i(ht acti)ated re'a& circuit. *. Static characteristics of Thermistors. +. Sin('e ,hase ha'f -a)e and fu'' -a)e rectifiers -ith inducti)e and ca,aciti)e fi'ters. .. !ifferentia' am,'ifiers usin( FET. 1/. Stud& of C 0. 11. Series and ,ara''e' resonance circuits. 12. ea'ization of ,assi)e fi'ters.

Department of electrical and electronics engineering

EE2207 - Electronic devices and circuits lab

Ex N! "# C$ARACTERISTICS OF PN %UNCTION DIODE

AIM& To stud& the %1 2unction diode characteristics under For-ard 3 4ias conditions. APPARATUS RE'UIRED& S N! 1 2 3 N#(e .%.S #mmeter 8o'tmeter T$EORY& # %1 2unction diode is a t-o termina' 2unction de)ice. "t conducts on'& in one direction 5on'& on for-ard 4iasin(7. FOR.ARD BIAS& 0n for-ard 4iasin(, initia''& no current f'o-s due to 4arrier ,otentia'. #s the a,,'ied ,otentia' e=ceeds the 4arrier ,otentia' the char(e carriers (ain sufficient ener(& to cross the ,otentia' 4arrier and hence enter the other re(ion. The ho'es, -hich are ma2orit& carriers in the %6re(ion, 4ecome minorit& carriers on enterin( the 16re(ions, and e'ectrons, -hich are the ma2orit& carriers in the 16re(ion, 4ecome minorit& carriers on enterin( the %6re(ion. This in2ection of >inorit& carriers resu'ts in the current f'o-, o,,osite to the direction of e'ectron mo)ement. R#)*e 5/63/78 5/93/7m# 5/61//;# 5/9178 5/61/78 T+,e '-+ 1 1 1 1 1 COMPONENTS RE'UIRED& S N! 1 2 3 4 N#(e !iode esistor Bread Board <ires R#)*e "14//1 1: T+,e '-+ 1 1 1 e)erse

Department of electrical and electronics engineering

EE2207 - Electronic devices and circuits lab REVERSE BIAS& 0n re)erse 4iasin(, the ma2orit& char(e carriers are attracted to-ards the termina's due to the a,,'ied ,otentia' resu'tin( in the -idenin( of the de,'etion re(ion. Since the char(e carriers are ,ushed to-ards the termina's no current f'o-s in the de)ice due to ma2orit& char(e carriers. There -i'' 4e some current in the de)ice due to the therma''& (enerated minorit& carriers. The (eneration of such carriers is inde,endent of the a,,'ied ,otentia' and hence the current is constant for a'' increasin( re)erse ,otentia'. This current is referred to as e)erse Saturation Current 5"07 and it increases -ith tem,erature. <hen the a,,'ied re)erse )o'ta(e is increased 4e&ond the certain 'imit, it resu'ts in 4rea:do-n. !urin( 4rea:do-n, the diode current increases tremendous'&. PROCEDURE& FOR.ARD BIAS& 1. Connect the circuit as ,er the dia(ram. 2. 8ar& the a,,'ied )o'ta(e 8 in ste,s of /.18. 3. 1ote do-n the corres,ondin( #mmeter readin(s ". 4. %'ot a (ra,h 4et-een 8 3 " OBSERVATIONS 1. Find the d.c 5static7 resistance ? 8@". 2. Find the a.c 5d&namic7 resistance r ? 8 @ " 5/ 0 V1 I) 0
V2 V1 . I 2 I1

3. Find the for-ard )o'ta(e dro, ? ABintC it is eDua' to /.* for Si and /.3 for EeF REVERSE BIAS& 1. Connect the circuit as ,er the dia(ram. 2. 8ar& the a,,'ied )o'ta(e 8 in ste,s of 1./8. 3. 1ote do-n the corres,ondin( #mmeter readin(s ". 4. %'ot a (ra,h 4et-een 8 3 " Department of electrical and electronics engineering 3

EE2207 - Electronic devices and circuits lab ". Find the d&namic resistance / 0 V 1 I

FORMULA FOR REVERSE SATURATION CURRENT (IO)& I! 0 I12ex,( V1 VT)34" <here 8T is the )o'ta(e eDui)a'ent of Tem,erature ? :T@D 6: is Bo'tzmannGs constant, D is the char(e of the e'ectron tem,erature in de(rees He')in. ?1 for Si'icon and 2 for Eermanium and T is the

CIRCUIT DIA5RAM& FOR.ARD BIAS& (0-30)mA 1%

(0-30)! -

REVERSE BIAS&

a a a a a A A A (0-"00)#A -

(0-1)! -

a a (0-30)! (0-30)! a a a A A A Department of electrical and electronics engineering

1%

EE2207 - Electronic devices and circuits lab S,e6i7i6#-i!) 7!/ "N800"& Si9i6!) Di!de %ea: "n)erse 8o'ta(eC 5/8 "dc ? 1#. >a=imum for-ard )o'ta(e dro, at 1 #m, is 1.1 )o'ts >a=imum re)erse current I5/ )o'ts is 5# TABULAR COLUMN& FOR.ARD BIAS& REVERSE BIAS&

S N!

VOLTA5E (I) V!9-s)

CURRENT (I) (A)

S N!

VOLTA5E (I) V!9-s)

CURRENT (I) A)

MODEL 5RAP$ &f (mA) "2

84 5 8o'ts7 58o'ts7

"1 8 1 82 8f

"r 5#7

Department of electrical and electronics engineering

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EE2207 - Electronic devices and circuits lab

RESULT& For-ard and e)erse 4ias characteristics of the %1 2unction diode and the d&namic resistance under For-ard 4ias ? 666666666666666666666 e)erse 4ias ? 6666666666666666666666. e)erse Saturation Current ? 6666666666666666.

Department of electrical and electronics engineering

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EE2207 - Electronic devices and circuits lab

Ex N! ": C$ARACTERISTICS OF ;ENER DIODE

AIM& To determine the 4rea:do-n )o'ta(e of a (i)en zener diode. APPARATUS RE'UIRED& S N! 1 2 3 N#(e .%.S #mmeter 8o'tmeter T$EORYC # ,ro,er'& do,ed cr&sta' diode, -hich has a shar, 4rea:do-n )o'ta(e, is :no-n as zener diode. FOR.ARD BIAS& 0n for-ard 4iasin(, initia''& no current f'o-s due to 4arrier ,otentia'. #s the a,,'ied ,otentia' increases, it e=ceeds the 4arrier ,otentia' at one )a'ue and the char(e carriers (ain sufficient ener(& to cross the ,otentia' 4arrier and enter the other re(ion. the ho'es ,-hich are ma2orit& carriers in ,6re(ion, 4ecome minorit& carriers on enterin( the 16re(ions and e'ectrons, -hich are the ma2orit& carriers in the 16re(ions 4ecome minorit& carriers on enterin( the %6re(ion. This in2ection of minorit& carriers resu'ts current, o,,osite to the direction of e'ectron mo)ement. REVERSE BIAS& <hen the re)erse 4ias is a,,'ied due to ma2orit& carriers sma'' amount of current 5ie7 re)erse saturation current f'o-s across the 2unction. #s the re)erse Department of electrical and electronics engineering 7 R#)*e 5/63/78 5/93/7m# 5/925/7;# 5/93/78 5/9278 T+,e '-+ 2 1 1 1 1 COMPONENTS RE'UIRED& S N! 1 2 3 4 N#(e zener diode esistor Bread Board <ires R#)*e FJ5.1 1H T+,e '-+ 1 1 1

EE2207 - Electronic devices and circuits lab 4ias is increased to 4rea:do-n )o'ta(e, sudden rise in current ta:es ,'ace due to zener effect. ;ENER EFFECT& 1orma''&, %1 2unction of Jener !iode is hea)i'& do,ed. !ue to hea)& do,in( the de,'etion 'a&er -i'' 4e narro-. <hen the re)erse 4ias is increased the ,otentia' across the de,'etion 'a&er is more. This e=erts a force on the e'ectrons in the outermost she''. Because of this force the e'ectrons are ,u''ed a-a& from the ,arent nuc'ei and 4ecome free e'ectrons. This ionization, -hich occurs due to e'ectrostatic force of attraction, is :no-n as Jener effect. "t resu'ts in 'ar(e num4er of free carriers, -hich in turn increases the re)erse saturation current PROCEDURE& FOR.ARD BIAS& 1. 2. 3. 4. 5. Connect the circuit as ,er the circuit dia(ram. 8ar& the ,o-er su,,'& in such a -a& that the readin(s are ta:en in ste,s of /.18 in the )o'tmeter ti'' the need'e of ,o-er su,,'& sho-s 3/8. 1ote do-n the corres,ondin( ammeter readin(s. %'ot the (ra,h C8 5)s7 ". Find the d&namic resistance / 0 V 1 I

REVERSE BIAS& 1. Connect the circuit as ,er the dia(ram. 2. 8ar& the ,o-er su,,'& in such a -a& that the readin(s are ta:en in ste,s of /.18 in the )o'tmeter ti'' the need'e of ,o-er su,,'& sho-s 3/8. 3. 1ote do-n the corres,ondin( #mmeter readin(s ". 4. %'ot a (ra,h 4et-een 8 3 " ". Find the d&namic resistance / 0 V 1 I $. Find the re)erse )o'ta(e 8r at "z?2/ m#. CIRCUIT DIA5RAM& Department of electrical and electronics engineering (

EE2207 - Electronic devices and circuits lab FOR.ARD BIAS&

1%

(0-30)mA a a a a a A A A
1 5/63/7 % -

aaaaa 5/63/7 8 -

REVERSE BIAS& (0-30)mA

1%

a a a a a A A A

aaaaa 5/63/7 8 -

a a a a a A A A a a a a a A A 5/61/7 8 1A
%

a a a a a A A A a a a a a A A A

Department of electrical and electronics engineering

EE2207 - Electronic devices and circuits lab ;ENER DIODE& "f 5in m#7 "2

8B 8r 5in )o'ts7

"1 81 82 8f 5in )o'ts7

"r 5in micro#7 TABULAR COLUMN& FOR.ARD BIAS& REVERSE BIAS&

S N!

VOLTA5E (I) V!9-s)

CURRENT (I) (A)

S N!

VOLTA5E (I) V!9-s)

CURRENT (I) A)

RESULT& For-ard and and Department of electrical and electronics engineering 10 e)erse 4ias characteristics of the zener diode -as studied

EE2207 - Electronic devices and circuits lab For-ard 4ias d&namic resistance ? 666666666666666666666 e)erse 4ias d&namic resistance ? 6666666666666666666666 The re)erse )o'ta(e at "z ?2/ m# determined from the re)erse characteristics of the Jener diode is 66666666666666666666666666.

Department of electrical and electronics engineering

11

EE2207 - Electronic devices and circuits lab

Ex N! 2# C$ARACTERISTICS OF CE CONFI5URATION USIN5 B%T

AIM& To ,'ot the transistor characteristics of CE confi(uration. APPARATUS RE'UIRED& S N! 1 N#(e .%.S R#)*e 5/63/78 5/91/7m# 2 #mmeter 5/917# 3 8o'tmeter 5/93/78 5/9278 1 1 1 3 4 T+,e '-+ 2 1 COMPONENTS RE'UIRED& S N! 1 2 N#(e Transistor esistor Bread Board <ires R#)*e BC 1/* 1/: 1H T+,e '-+ 1 1 1

T$EORY& # BJT is a three termina' t-o 9 2unction semiconductor de)ice in -hich the conduction is due to 4oth the char(e carrier. Bence it is a 4i,o'ar de)ice and it am,'ifier the sine -a)eform as the& are transferred from in,ut to out,ut. BJT is c'assified into t-o t&,es 9 1%1 or %1%. # 1%1 transistor consists of t-o 1 t&,es in 4et-een -hich a 'a&er of % is sand-iched. The transistor consists of three termina' emitter, co''ector and 4ase. The emitter 'a&er is the source of the char(e carriers and it is hearti'& do,ed -ith a moderate cross sectiona' area. The co''ector co''ects the char(e carries and hence moderate do,in( and 'ar(e cross sectiona' area. The 4ase re(ion acts a ,ath for the mo)ement of the char(e carriers. "n order to reduce the recom4ination of ho'es and e'ectrons the 4ase re(ion is 'i(ht'& do,ed and is of ho''o- cross sectiona' area. 1orma''& the transistor o,erates -ith the EB 2unction for-ard 4iased.

Department of electrical and electronics engineering

12

EE2207 - Electronic devices and circuits lab "n transistor, the current is same in 4oth 2unctions, -hich indicates that there is a transfer of resistance 4et-een the t-o 2unctions. 0ne to this fact the transistor is :no-n as transfer resistance of transistor.

PROCEDURE& INPUT C$ARECTERISTICS& 1. 2. Connect the circuit as ,er the circuit dia(ram. Set 8CE ,)ar& 8BE in re(u'ar inter)a' of ste,s and note do-n the "B readin(. 3. e,eat the a4o)e ,rocedure for different )a'ues of 8 CE.

corres,ondin( %'ot the (ra,hC 8BE 8s "B for a constant 8CE.

OUTPUT C$ARACTERISTICS& 1. 2. Connect the circuit as ,er the circuit dia(ram. Set "B, 8ar& 8CE in re(u'ar inter)a' of ste,s and note do-n the corres,ondin( "C readin(. of "B. 3. %'ot the (ra,hC 8CE 8s "C for a constant "B. e,eat the a4o)e ,rocedure for different )a'ues

PIN DIA5RAM& B Bottom 8ie- BC1/* E S,ecificationC BC1/*@5/8@/.1#,/.3<,3//>Bz C

Department of electrical and electronics engineering

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EE2207 - Electronic devices and circuits lab CIRCUIT DIA5RAM& 5/ 9 3/7m# A , +,10710 ! (0-30)! %- (0-30)! +, E,

1 H

(0 * 2"0) A 10 % A (0-30)! (0-1)! ! -

MODEL 5RAP$&

INPUT C$ARACTERISTICS&

OUTPUT C$ARACTERISTICS&

#A &,

mA

"B

8CE ? /8 8CE ? 58

"B?$/# "B?4/# "B?2/#

8BE587

8CE587

TABULAR COLUMN& Department of electrical and electronics engineering 1$

EE2207 - Electronic devices and circuits lab INPUT C$ARACTERISTICS& VCE0"V VBE(V) IB(<A) VBE(V) VCE02V IB(<A)

OUTPUT C$ARACTERISTICS& IB020 A VCE(V) IC((A) VCE(V) IB080 A IC((A)

RESULT& The transistor characteristics of a Common Emitter 5CE7 confi(uration -ere ,'otted

Ex N! 2:

Department of electrical and electronics engineering

1"

EE2207 - Electronic devices and circuits lab

C$ARACTERISTICS OF CB CONFI5URATION USIN5 B%T

AIM& To ,'ot the transistor characteristics of CB confi(uration. APPARATUS RE'UIRED& S N! 1 N#(e .%.S R#)*e 5/63/78 5/91/7m# 2 #mmeter 5/917# 3 8o'tmeter T$EORY& "n this confi(uration the 4ase is made common to 4oth the in,ut and out. The emitter is (i)en the in,ut and the out,ut is ta:en across the co''ector. The current (ain of this confi(uration is 'ess than unit&. The )o'ta(e (ain of CB confi(uration is hi(h. !ue to the hi(h )o'ta(e (ain, the ,o-er (ain is a'so hi(h. "n CB confi(uration, Base is common to 4oth in,ut and out,ut. "n CB confi(uration the in,ut characteristics re'ate "E and 8EB for a constant 8CB. "nitia''& 'et 8CB ? / then the in,ut 2unction is eDui)a'ent to a for-ard 4iased diode and the characteristics resem4'es that of a diode. <here 8 CB ? K8" 5)o'ts7 due to ear'& effect "E increases and so the characteristics shifts to the 'eft. The out,ut characteristics re'ate "C and 8CB for a constant "E. "nitia''& "C increases and then it 'e)e's for a )a'ue "C ? "E. <hen "E is increased "C a'so increases ,ro,ortiona'it&. Thou(h increase in 8CB causes an increase in , since is a fraction, it is ne('i(i4'e and so "C remains a constant for a'' )a'ues of 8CB once it 'e)e's off. PIN DIA5RAM& B B!--!( Vie= BC"07 S,ecificationC BC1/*@5/8@/.1#,/.3<,3//>Bz Department of electrical and electronics engineering 1' 5/93/78 5/9278 1 1 1 3 4 T+,e '-+ 2 1 COMPONENTS RE'UIRED& S N! 1 2 N#(e Transistor esistor Bread Board <ires R#)*e BC 1/* 1/: 1H T+,e '-+ 1 1 1

EE2207 - Electronic devices and circuits lab

E CIRCUIT DIA5RAM&
10 %

(0-30)!

(0-30)! (0-30)! a (0-2)! a a a a a a a a a A A A A PROCEDURE& A A INPUT C$ARACTERISTICS& a a a a "t is the cur)e 4et-een emitter current " E and emitter64ase )o'ta(e 8BE at a a constant co''ector64ase )o'ta(e 8CB. a a a a 1. Connect the circuit as ,er the circuit dia(ram. A A 2. Set 8CE?58, the corres,ondin( " B. A )ar& 8BE in ste,s of /.18 and note do-nA A A e,eat the a4o)e ,rocedure for 1/8, 158. 3. %'ot the (ra,h 8BE 8s "B for a constant 8CE. 4. Find the h ,arameters. OUTPUT C$ARACTERISTICS& "t is the cur)e 4et-een co''ector current " C and co''ector64ase )o'ta(e 8CB at constant emitter current "E. 1. Connect the circuit as ,er the circuit dia(ram. 2. Set "B?2/#, )ar& 8CE in ste,s of 18 and note do-n the corres,ondin( " C. e,eat the a4o)e ,rocedure for 4/#, +/#, etc. 3. %'ot the (ra,h 8CE 8s "C for a constant "B. 4. Find the h ,arameters

8EB

(0-1)mA a a a a a A A A

(0-30)mA a a a a a A A A

1%

Department of electrical and electronics engineering

17

EE2207 - Electronic devices and circuits lab

TABULAR COLUMN& INPUT C$ARACTERISTICS& S N! VCB 0 VEB (V) V IE ( A) VCB 0 VEB (V) V IE ( A) VCB 0 VEB IE (V) ( A) V

OUTPUT C$ARACTERISTICS& S N! IE0 VCB (V) (A I6 ((A) IE0 VCB (V) (A I6 ((A) IE0 VCB (V) (A I6 ((A)

MODEL 5RAP$& INPUT C$ARACTERISTICS&

"C Department of electrical and electronics engineering 1(

EE2207 - Electronic devices and circuits lab 5m#7 8CB1 "E2 8CB2 "E1 8EB1 8EB2 8EB 587

OUTPUT C$ARACTERISTICS& "C 5m#7 "E3

"C2 "C1

"E2 "E1

8CB1 RESULT&

8CB2

8CB 587

The transistor characteristics of a Common Base 5CB7 confi(uration -ere ,'otted and uses studied.

Ex N! 26 C$ARACTERISTICS OF CC CONFI5URATION USIN5 B%T

AIM& To ,'ot the transistor characteristics of CE confi(uration. APPARATUS RE'UIRED& S N! 1 2 N#(e .%.S #mmeter R#)*e 5/63/78 5/93/7m# T+,e COMPONENTS RE'UIRED& '-+ S N! N#(e R#)*e T+,e 2 1 Transistor BC 1/* 1 2 esistor 1: Department of electrical and electronics engineering 1) '-+ 1 2

EE2207 - Electronic devices and circuits lab 5/925/7;# 3 8o'tmeter T$EORY& # BJT is a three termina' t-o 9 2unction semiconductor de)ice in -hich the conduction is due to 4oth the char(e carrier. Bence it is a 4i,o'ar de)ice and it am,'ifier the sine -a)eform as the& are transferred from in,ut to out,ut. BJT is c'assified into t-o t&,es 9 1%1 or %1%. # 1%1 transistor consists of t-o 1 t&,es in 4et-een -hich a 'a&er of % is sand-iched. The transistor consists of three termina' emitter, co''ector and 4ase. The emitter 'a&er is the source of the char(e carriers and it is hearti'& do,ed -ith a moderate cross sectiona' area. The co''ector co''ects the char(e carries and hence moderate do,in( and 'ar(e cross sectiona' area. The 4ase re(ion acts a ,ath for the mo)ement of the char(e carriers. "n order to reduce the recom4ination of ho'es and e'ectrons the 4ase re(ion is 'i(ht'& do,ed and is of ho''o- cross sectiona' area. 1orma''& the transistor o,erates -ith the EB 2unction for-ard 4iased. "n transistor, the current is same in 4oth 2unctions, -hich indicates that there is a transfer of resistance 4et-een the t-o 2unctions. 0ne to this fact the transistor is :no-n as transfer resistance of transistor. PIN DIA5RAM& B Bottom 8ie- BC1/* E S,ecificationC BC1/*@5/8@/.1#,/.3<,3//>Bz C 5/93/78 5/9578 1 1 1 3 4 Bread Board <ires 1

CIRCUIT DIA5RAM& 1 % - engineering Department of electrical and electronics 20 A (0-30)mA

EE2207 - Electronic devices and circuits lab

1 %

(0-2"0)#A A (0-30)! (0-30)! ! -

(0-30)! -

(0-30)!

PROCEDURE& INPUT C$ARECTERISTICS& 1. Connect the circuit as ,er the circuit dia(ram. 2. Set 8CE, )ar& 8BE in re(u'ar inter)a' of ste,s and note do-n the corres,ondin( "B readin(. of 8CE. 3. %'ot the (ra,hC 8BC 8s "B for a constant 8CE. e,eat the a4o)e ,rocedure for different )a'ues

OUTPUT C$ARECTERISTICS& 1. Connect the circuit as ,er the circuit dia(ram. 2. Set "B, 8ar& 8CE in re(u'ar inter)a' of ste,s and note do-n the corres,ondin( "C readin(. of "B. 3. %'ot the (ra,hC 8CE 8s "C for a constant "B. MODEL 5RAP$& INPUT C$ARACTERISTICS& OUTPUT C$ARACTERISTICS& e,eat the a4o)e ,rocedure for different )a'ues

( A) IB VCE00 VCE0>V Ie

((A) IB0?0 A 21

Department of electrical and electronics engineering

EE2207 - Electronic devices and circuits lab IB080 A IB020 A 0 VBC(V) 0 VCE(V)

TABULAR COLUMN& INPUT C$ARACTERISTICS& VCE0"V VBC(V) IB(<A) VBC(V) VCE02V IB(<A)

OUTPUT C$ARACTERISTICS& IB020 A VCE(V) IE((A) VCE(V) IB080 A IE((A)

RESULT& The transistor characteristics of a Common Emitter 5CC7 confi(uration -ere ,'otted.

Department of electrical and electronics engineering

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EE2207 - Electronic devices and circuits lab

Ex N! @ C$ARACTERISTICS OF %UNCTION FIELD EFFECT TRANSISTOR

AIM& To %'ot the characteristics of (i)en FET 3 determine r d, (m, , "!SS,8%. APPARATUS RE'UIRED& S N! 1 2 N#(e .%.S #mmeter R#)*e 5/63/78 5/93/7m# 5/93/78 5/61/78 T$EORY& FET is a )o'ta(e o,erated de)ice. "t has (ot 3 termina's. The& are Source, !rain 3 Eate. <hen the (ate is 4iased ne(ati)e -ith res,ect to the source, the ,n 2unctions are re)erse 4iased 3 de,'etion re(ions are formed. The channe' is more 'i(ht'& do,ed than the , t&,e (ate, so the de,'etion re(ions ,enetrate dee,'& in to the channe'. The resu't is that the channe' is narro-ed, its resistance is increased, 3 "! is reduced. <hen the ne(ati)e 4ias )o'ta(e is further increased, the de,'etion re(ions meet at the center 3 "! is cutoff com,'ete'&. PROCEDURE& DRAIN C$ARACTERISTICS& 1. Connect the circuit as ,er the circuit dia(ram. 2. Set the (ate )o'ta(e 8ES ? /8. 3. 8ar& 8!S in ste,s of 1 8 3 note do-n the corres,ondin( " !. 4. e,eat the same ,rocedure for 8ES ? 618. Department of electrical and electronics engineering 23 T+,e '-+ 2 1 1 1 COMPONENTS RE'UIRED& S N! 1 2 3 4 N#(e FET esistor Bread Board <ires R#)*e BF<1/ 1: $+H T+,e '-+ 1 1 1 1

8o'tmeter

EE2207 - Electronic devices and circuits lab 5. %'ot the (ra,h 8!S 8s "! for constant 8ES. OBSERVATIONS 1. d.c 5static7 drain resistance, r! ? 8!S@"!. 2. a.c 5d&namic7 drain resistance, rd ? VDS1 ID 3. 0,en source im,edance, L0S ? 1@ rd. TRANSFER C$ARACTERISTICS& 1. Connect the circuit as ,er the circuit dia(ram. 2. Set the drain )o'ta(e 8!S ? 5 8. 3. 8ar& the (ate )o'ta(e 8ES in ste,s of 18 3 note do-n the corres,ondin( "!. 4. e,eat the same ,rocedure for 8!S ? 1/8. 5. %'ot the (ra,h 8ES 8s "! for constant 8!S. FET PARAMETER CALCULATION& !rain esistancd rd ?
VDS VGS ID ID VDS VGS

Transconductance (m ?

#m,'ification factor M?rd . (m

CIRCUIT DIA5RAM&
68K
G D

(0-30mA) A !

1k

BFW10
S

+ (0-30)V +

+ ! (0-10)V (0-30)V (0-30)V ! -

Department of electrical and electronics engineering

2$

EE2207 - Electronic devices and circuits lab PIN DIA5RAM& BOTTOM VIE. OF BF."0& SPECIFICATION& 8o'ta(e C 3/8, "!SS N +m#.

MODEL 5RAP$& DRAIN C$ARACTERISTICS& &D (mA)

VGS = 0V

VGS = -1V VGS = -2V !./ 0 -3! 0 TRANSFER C$ARACTERISTICS& !D/ (volts)

"!5m#7

8!S ?Const 8ES 587 TABULAR COLUMN& Department of electrical and electronics engineering 2"

EE2207 - Electronic devices and circuits lab DRAIN C$ARACTERISTICS& V5S 0 0V VDS (V) ID((A) V5S 0 4"V VDS (V) ID((A)

TRANSFER C$ARACTERISTICS& VDS 0>v!9-s V5S (V) ID((A) VDS 0 "0v!9-s V5S (V) ID((A)

RESULT& Thus the !rain 3 Transfer characteristics of (i)en FET is %'otted.

d?

(m ?
?

"!SS ? %inch off )o'ta(e 8% ?

Ex N! 8 C$ARACTERISTICS OF UNI%UNCTION TRANSISTOR

AIM& Department of electrical and electronics engineering 2'

EE2207 - Electronic devices and circuits lab To %'ot the characteristics of UJT 3 determine itGs intrinsic standoff atio. APPARATUS RE'UIRED& S N! 1 2 3 N#(e .%.S #mmeter 8o'tmeter R#)*e 5/63/78 5/93/7m# 5/93/78 5/91/78 T+,e '-+ 2 1 1 1 S N! 1 2 3 COMPONENTS RE'UIRED& N#(e UJT esistor Bread Board R#)*e 212$4$ 1H T+,e '-+ 1 2 1

T$EORY& UJT5!ou4'e 4ase diode7 consists of a 4ar of 'i(ht'& do,ed n6t&,e si'icon -ith a sma'' ,iece of hea)i'& do,ed % t&,e materia' 2oined to one side. "t has (ot three termina's. The& are Emitter5E7, Base15B17,Base25B27.Since the si'icon 4ar is 'i(ht'& do,ed, it has a hi(h resistance 3 can 4e re,resented as t-o resistors, rB1 3 rB2. <hen 8B1B2 ? /, a sma'' increase in 8 E for-ard 4iases the emitter 2unction. The resu'tant ,'ot of 8 E 3 " E is sim,'& the characteristics of for-ard 4iased diode -ith resistance. "ncreasin( 8 EB1 reduces the emitter 2unction re)erse 4ias. <hen 8EB1 ? 8rB1 there is no for-ard or re)erse 4ias. 3 " E ? /. "ncreasin( 8EB1 4e&ond this ,oint 4e(ins to for-ard 4ias the emitter 2unction. #t the ,ea: ,oint, a sma'' for-ard emitter current is f'o-in(. This current is termed as ,ea: current5 "% 7. Unti' this ,oint UJT is said to 4e o,eratin( in cutoff re(ion. <hen "E increases 4e&ond ,ea: current the de)ice enters the ne(ati)e resistance re(ion. "n -hich the resistance r B1 fa''s ra,id'& 3 8E fa''s to the )a''e& )o'ta(e.8). #t this ,oint "E ? "). # further increase of "E causes the de)ice to enter the saturation re(ion. PROCEDURE& 1. Connect the circuit as ,er the circuit dia(ram. Department of electrical and electronics engineering 27

EE2207 - Electronic devices and circuits lab 2. Set 8B1B2 ? /8, )ar& 8EB1 , 3 note do-n the readin(s of "E 3 8EB1 3. Set 8B1B2 ? 1/8 , )ar& 8EB1 , 3 note do-n the readin(s of "E 3 8EB1 4. %'ot the (ra,h C "E 8ersus 8EB1 for constant 8B1B2. 5. Find the intrinsic standoff ratio.

CIRCUIT DIA5RAM& +2

1%-

(0-30)mA A E !

1%-

! (0-30)! +2 (0-30)!

(0-30)!

(0-30)!

PIN DIA5RAM C BOTTOM VIE. OF 2N2?8?&

SPECIFICATION FOR 2N2?8?& O "nter 4ase resistance

BB

? 4.* to ..1 H

O >inimum 8a''e& current ? 4 m# O >a=imun %ea: ,oint emitter current 5 # O>a=imum emitter re)erse current 12 #. FORMULA FOR INTRINSIC STANDOFF RATIO& ? 8% 6 8!@ 8B1B2., -here 8! ? /.*8. Department of electrical and electronics engineering 2(

EE2207 - Electronic devices and circuits lab

MODEL 5RAP$& %ea: ,oint 8% "% 1e(ati)e resistance re(ion 8EB1587 8a''e& ,oint 8B1B2 ? 8 8B1B2 ? /8

"8 TABULAR COLUMN& VB"B2 0 0V VEB" (V) IE ((A)

"E 5m#7

VB"B2 0 "0V VEB" (V) IE ((A)

PROCEDURE& 1. Ei)e the circuit connections as ,er the circuit dia(ram. 2. The dc in,ut )o'ta(e is set to 2/ 8 in %S. 3. The out,ut s-ee, -a)eform is measured usin( C 0. Department of electrical and electronics engineering 2)

EE2207 - Electronic devices and circuits lab 4. The (ra,h of out,ut s-ee, -a)eform is ,'otted RESULT& 1. Thus the characteristics of (i)en UJT -as %'otted 3 its intrinsic standoff atio ? 6666.

Department of electrical and electronics engineering

30

EE2207 - Electronic devices and circuits lab

Ex N! > C$ARACTERISTICS OF P$OTO4DIODE AND P$OTOTRANSISTOR

AIM& 1. To stud& the characteristics of a ,hoto6diode. 2. To stud& the characteristics of ,hototransistor.

APPARATUS RE'UIRED& S N! 1 2 3 N#(e .%.S #mmeter 8o'tmeter R#)*e 5/63/78 5/93/7m# 5/93/78 T+,e '-+ 1 1 1 S N! 1 2 3 4

COMPONENTS RE'UIRED& N#(e %hoto diode esistor Bread Board %hoto transistor 1H R#)*e T+,e '-+ 1 2 1 1

T$EORY& P$OTODIODE& # ,hoto diode is a t-o termina' ,n 2unction de)ice, -hich o,erates on re)erse 4ias. 0n re)erse 4iasin( a ,n 2unction diode, there resu'ts a constant current due to minorit& char(e carriers :no-n as re)erse saturation current. "ncreasin( the therma''& (enerated minorit& carriers 4& a,,'&in( e=terna' ener(&, i.e., either heat or 'i(ht ener(& at the 2unction can increase this current. <hen -e a,,'& 'i(ht ener(& as an e=terna' source, it resu'ts in a ,hoto diode that is usua''& ,'aced in a ('ass ,ac:a(e so that 'i(ht can reach the 2unction. "nitia''& -hen no 'i(ht is incident, the current is on'& the re)erse saturation current that f'o-s throu(h the re)erse 4iased diode. This current is termed as the dar: current of the ,hoto diode. 1o- -hen 'i(ht is incident on the ,hoto diode then the therma''& Department of electrical and electronics engineering 31

EE2207 - Electronic devices and circuits lab (enerated carriers increase resu'tin( in an increased re)erse current -hich is ,ro,ortiona' to the intensit& of incident 'i(ht. # ,hoto diode can turn on and off at a faster rate and so it is used as a fast actin( s-itch. CIRCUIT DIA5RAM& (0-30)mA
1%

(0-30)!

a a a a a A A A

(0-30)!

TABULAR COLUMN& S N! VOLTA5E (I) V!9-s) CURRENT (I) (A)

MODEL 5RAP$&

Department of electrical and electronics engineering

32

EE2207 - Electronic devices and circuits lab

1 (%)

&llumination lm2m2 T$EORY& P$OTOTRANSISTOR& "t is a transistor -ith an o,en 4aseP there e=ists a sma'' co''ector current consistin( of therma''& ,roduced minorit& carriers and surface 'ea:a(e. B& e=,osin( the co''ector 2unction to 'i(ht, a manufacturer can ,roduce a ,hototransistor, a transistor that has more sensiti)it& to 'i(ht than a ,hoto diode. Because the 4ase 'ead is o,en, a'' the re)erse current is forced into the 4ase of the transistor. The resu'tin( co''ector current is " Ceo ? dc"r. The main difference 4et-een a ,hototransistor and a ,hotodiode is the current (ain, dc. The same amount of 'i(ht stri:in( 4oth de)ices ,roduces dc times more current in a ,hototransistor than in a ,hotodiode.

CIRCUIT DIA5RAM& 3 4 3
1H
5/63/87

TABULAR COLUMN&

SYMBOL& Department of electrical and electronics engineering 33

EE2207 - Electronic devices and circuits lab

S N!

VCE (i) V!9-s)

IC (i) (A)

MODEL 5RAP$&

&, (mA) $00 5u6 200 5u6 0 5u6 !,E(!)

PROCEDURE& P$OTO DIODE& 1. i( u, the circuit as ,er the circuit dia(ram. the ,hoto diode. 3. Set the )o'ta(e of the 4u'4 5sa&, 287, )ar& the )o'ta(e of the diode inste,s of 18 and note do-n the corres,ondin( diode current, " r. 4. e,eat the a4o)e ,rocedure for the )arious )o'ta(es of !C 4u'4. 5. %'ot the (ra,hC 8! vs. "r for a constant !C 4u'4 )o'ta(e. P$OTOTRANSISTOR& 1. i( u, the circuit as ,er the circuit dia(ram.

2. >aintain a :no-n distance 5sa& 5 cm7 4et-een the !C 4u'4 and

Department of electrical and electronics engineering

3$

EE2207 - Electronic devices and circuits lab 2. >aintain a :no-n distance 5sa& 5 cm7 4et-een the !C 4u'4 and the ,hototransistor. 3. Set the )o'ta(e of the 4u'4 5sa&, 287, )ar& the )o'ta(e of the diode in ste,s of 18 and note do-n the corres,ondin( diode current, " r. 4. e,eat the a4o)e ,rocedure for the )arious )a'ues of !C 4u'4. 5. %'ot the (ra,hC 8! vs. "r for a constant 4u'4 )o'ta(e.

RESULT& Thus the characteristics of ,hoto diode and ,hototransistor are studied.

Department of electrical and electronics engineering

3"

EE2207 - Electronic devices and circuits lab

Ex N! ?
C$ARACTERISTICS OF T$ERMISTOR AIM& To stud& the characteristics of Thermistor. T$EORY& Thermistor or Therma' resistor is t-o 9 termina' semiconductor de)ice -hose resistance is tem,erature sensiti)e. The )a'ue of such resistors decreases -ith increase in tem,erature. >ateria's em,'o&ed in the manufacture of the thermistors inc'ude o=ides of man(anese. The thermistors has )er& hi(h tem,erature coefficient of resistance, of the order of 3 to 5Q ,er C, ma:in( it an idea' tem,erature transducer. The tem,erature coefficient of resistance is norma''& ne(ati)e. The reistance at an& tem,erature T, is (i)en a,,ro=imate'& 4& ? e=, R 51@T 9 1@To7 ? thersmistor co4a't, nic:e', co,,er, iron uranium and

<here

? thermistor resistance at tem,erature T 5H7,

resistance at tem,erature To 5H7, and ? a constant determined 4& ca'i4ration. #t hi(h tem,eratures, this eDuation reduces to ? e=, 5 R@T7

The resistance 9 tem,erature characteristics is sho-n in Fi( 21.1/. The cur)e is non 9 'inear and the dro, in resistance from 5/// to 1/ occurs for an increase in tem,erature from 2/ to 1// C. The tem,erature of the de)ice can 4e chan(ed interna''& or e=terna''&. #n increase in current throu(h the de)ice -i'' raise its tem,erature carr&in( a dro, in its termina' resistance. #n& e=terna''& Department of electrical and electronics engineering 3'

EE2207 - Electronic devices and circuits lab heat source -i'' resu't in an increase in its 4od& tem,erature and dro, in resistance this t&,e action 5interna' or e=terna'7 'ends itse'f -e'' to contro' mechanism. Three usefu' ,arameters for characterizin( the thermistor are the time constant, dissi,ation constant , and resistance ratio. The time constant is the time for a thermistor to chan(e its resistance 4& $3Q of its initia' )a'ue, for zero 9 ,o-er dissi,ation. T&,ica' )a'ues of time constant ran(e from 1 to 5/ s. SYMBOL&

MODEL 5RAP$&

1 (-cm)

7 (deg)

Department of electrical and electronics engineering

37

EE2207 - Electronic devices and circuits lab

The dissi,ation factor is the ,o-er necessar& to increase the tem,erature of a thermistor 4& 1SC. T&,ica' )a'ues of dissi,ation factor ran(e from 1 to 1/ m<@SC. esistance ratio is the ratio of the resistance at 25 SC. "ts ran(e is a,,ro=imate'& 3 9 $/. Thermistors are used measure tem,erature, f'o- ,ressure, 'iDuid 'e)e', )o'ta(e or ,o-er 'e)e', )acuum, com,osition of (ases and therma' conducti)it& and a'so in com,ensation net-or:. RESULT& Thus the Characteristics of thermistor -as studied.

Department of electrical and electronics engineering

3(

EE2207 - Electronic devices and circuits lab

Ex N! 7# SIN5LE P$ASE $ALF .AVE RECTIFIER

AIM& To construct a Ba'f -a)e rectifier usin( diode and to dra- its ,erformance characteristics. APPARATUS RE'UIRED& RE'UIRED& S N! 1 2 3 4 N#(e Transformer .%.S #mmeter 8o'tmeter FORMULAE& .IT$OUT FILTER& 5i7 5ii7 5iii7 5i)7 5i7 5ii7 5iii7 5i)7 8rms 8dc ? ? 8m @ 2 8m @ 58rms @ 8dc72 9 1 58dc @ 8rms72 = 1// 58rmsG2 K 8dc27 8r,, @ 53 = 27 8m 9 8 r,, @ 2 8rmsG@ 8dc R#)*e 23/@5$6/6$78 5/63/78 5/93/7m# 5/925/7;# 5/93/78 5/9278 T+,e '-+ 1 2 1 1 1 1 S N! 1 2 3 4 5 N#(e !iode esistor Bread Board Ca,acitor C 0 R#)*e "14//1 1H T+,e '-+ 1 1 1 1//;f 1 1 COMPONENTS

i,,'e Factor? Efficienc& 8rms 8rmsG 8dc ? ? ? ?

.IT$ FILTER&

i,,'e Factor?

PROCEDURE&

Department of electrical and electronics engineering

3)

EE2207 - Electronic devices and circuits lab .IT$OUT FILTER& 1. Ei)e the connections as ,er the circuit dia(ram. 2. Ei)e 23/), 5/BJ "@% to the ste, do-n TF the ectifier "@%. 3. Ta:e the rectifier out,ut across the Toad. 4. %'ot its ,erformance (ra,h. .IT$ FILTER& 1. Ei)e the connections as ,er the circuit dia(ram. 2. Ei)e 23/), 5/BJ "@% to the ste, do-n TF the ectifier "@%. 3. Connect the Ca,acitor across the Toad. 4. Ta:e the rectifier out,ut across the Toad. 5. %'ot its ,erformance (ra,h. CIRCUIT DIA5RAM& 1 7ransformer 230 ! 2 '! -here secondar& connected to -here secondar& connected to

13 $007

19 230!9 "0:; A, suppl<

1008

1%
C 0

Department of electrical and electronics engineering

$0

EE2207 - Electronic devices and circuits lab TABULAR COLUMN& .IT$OUT FILTER& 8m 8rms 8dc i,,'e factor Efficienc&

.IT$ FILTER& 8rms 8r,, 8dc i,,'e factor Efficienc&

MODEL 5RAP$&

Vin (!olts)

t (ms) Vo (!olts)

.i-A!BFi9-e/

t (ms) Vo (!olts) .i-A Fi9-e/

t (ms) RESULT& Thus the ,erformance characteristics of 1 Ba'f -a)e rectifier -as o4tained.

Ex N! 7:
Department of electrical and electronics engineering $1

EE2207 - Electronic devices and circuits lab

SIN5LE P$ASE FULL .AVE RECTIFIER

AIM& To construct a Fu'' -a)e rectifier usin( diode and to dra- its ,erformance characteristics. APPARATUS RE'UIRED& RE'UIRED& S N! 1 2 3 4 N#(e Transformer .%.S #mmeter 8o'tmeter FORMULAE& .IT$OUT FILTER& 5i7 5ii7 5iii7 5i)7 8rms 8dc ? ? 8m @ 2 28m @ 58rms @ 8dc72 9 1 58dc @ 8rms72 = 1// R#)*e 23/@5$6/6$78 5/63/78 5/93/7m# 5/925/7;# 5/93/78 5/9278 T+,e '-+ 1 2 1 1 1 1 S N! 1 2 3 4 5 N#(e !iode esistor Bread Board Ca,acitor C 0 R#)*e "14//1 1H T+,e '-+ 2 1 1 1//;f 1 1 COMPONENTS

i,,'e Factor? Efficienc& ?

.IT$ FILTER& 5i7 5ii7 5i)7 8rms 8dc ? ? 8r,, @52O 37 8m 9 8 r,, 8rmsG@ 8dc

i,,'e Factor?

PROCEDURE& .IT$OUT FILTER& 1. Ei)e the connections as ,er the circuit dia(ram. Department of electrical and electronics engineering $2

EE2207 - Electronic devices and circuits lab 2. 3. 4. Ei)e 23/), 5/BJ "@% to the ste, do-n TF to the ectifier "@%. Ta:e the rectifier out,ut across the Toad. %'ot its ,erformance (ra,h. -here secondar& connected

.IT$ FILTER& 1. Ei)e the connections as ,er the circuit dia(ram. 2. Ei)e 23/), 5/BJ "@% to the ste, do-n TF the ectifier "@%. 3. Connect the Ca,acitor across the Toad. 4. Ta:e the rectifier out,ut across the Toad. 5. %'ot its ,erformance (ra,h. CIRCUIT DIA5RAM& -here secondar& connected to

1 7ransformer 230 ! 2 '!

13 $007

1008 19 230!9 "0:; A, suppl<

1%
C 0

13 $007

Department of electrical and electronics engineering

$3

EE2207 - Electronic devices and circuits lab TABULAR COLUMN& .IT$OUT FILTER& 8m 8rms 8dc i,,'e factor Efficienc&

.IT$ FILTER& 8rms 8r,, 8dc i,,'e factor Efficienc&

MODEL 5RAP$ &

Vin (!olts)

t (ms) Vo (!olts)

.i-A!B- Fi9-e/

t (ms) Vo (!olts) .i-A Fi9-e/

t (ms) RESULT& Thus the ,erformance characteristics of 1 Fu'' -a)e rectifier -ere o4tained.

Ex N! C
Department of electrical and electronics engineering $$

EE2207 - Electronic devices and circuits lab

DIFFERENTIAL AMPLIFIER
AIM& To construct a !ifferentia' am,'ifier in Common mode 3 !ifferentia' mode confi(uration and to find common mode re2ection ratio. APPARATUS RE'UIRED& A,,#/#-Bs 1 2 3 4 5 %S C 0 Si(na' Eenerator !CB ! B R#)*e 5/63/78 '-+ 1 1 1 2 2 COMPONENTS RE'UIRED&

S N! 1 2 3 4

I-e( Transistor Ca,acitor esistor Bread 4oard

T+,e BC1/*

R#)*e 4*/F 3..HU 3.3HU

'-+ 1 1 1 1 1

T$EORY& The !ifferentia' am,'ifier circuit is an e=treme'& ,o,u'ar connection used in "C units. The circuit has se,arate in,uts , t-o se,arate out,uts and emitters are connected to(ether. "f the same in,ut is a,,'ied to 4oth in,uts, the o,eration is ca''ed common mode. "n dou4'e ended o,eration t-o in,ut si(na's are a,,'ied , the difference of the in,uts resu'tin( in out,uts from 4oth co''ectors due to the difference of the si(na's a,,'ied to 4oth the in,uts. The main feature of the differentia' am,'ifier is the )er& 'ar(e (ain -hen o,,osite si(na's are a,,'ied to in,uts as com,ared to sma'' si(na' resu'tin( from common in,ut. The ratio of this difference (ain to the common (ain is ca''ed common mode re2ection ratio.

Department of electrical and electronics engineering

$"

EE2207 - Electronic devices and circuits lab

CIRCUIT DIA5RAM& DIFFERENTIAL MODE&

3.)% !o1 !o2

3.)%

!1 12!

!2 13!

3.3 %

-)!

)!

COMMON MODE& 3.)% !o1 !o2 3.)%

!2 13!

3.3 % Department of electrical and electronics engineering -)!

$'

EE2207 - Electronic devices and circuits lab PROCEDURE& DIFFERENTIAL MODE& 1. Connect the circuit as ,er the circuit dia(ram. 2. Set 81 ? 5/m) and 82 ?55m) usin( the si(na' (enerator. 3. Find the corres,ondin( out,ut )o'ta(es across 8 /1 3 8/2 usin( C 0 4. Ca'cu'ate common mode re2ection ratio usin( the (i)en formu'a. COMMON MODE& 1. Connect the circuit as ,er the circuit dia(ram. 2. Set 81 ? 5/m) usin( the si(na' (enerator. 3. Find the out,ut )o'ta(e across 8o usin( mu'timeter. 4. Ca'cu'te common mode re2ection ratio usin( the (i)en formu'a. CALCULATION& Common mode re2ection ratio5C> #d ? !ifferentia' mode (ain #c ? Common mode (ain <here #d ? 8o @8d 8o ? 0ut,ut )o'ta(e measured across C 0 8d ? 8 1 9 82 , 8 1 , 82 9 in,ut )o'ta(e a,,'ied. #c ? 8o @8c 8c ? 58 1 K 82 7@2 DIFFERENTIAL MODE& 81 82 0ut,ut )o'ta(e 8d? 81682 #d?8o@8d RESULT& found ? ? ? ? ? Thus the differentia' am,'ifier -as constructed in common mode COMMON MODE& "n,ut )o'ta(e 0ut,ut )o'ta(e 81?82 8c?581K827@2 ? ? ? ? 7 ? # d @ #c

and !ifferentia' mode confi(uration. Further common mode re2ection ratio -as

Exp. No: 12
Department of electrical and electronics engineering $7

EE2207 - Electronic devices and circuits lab

PASSIVE FILTERS
Aim:
7o attenuate un=anted fre>uenc< components from input signal b< using resistor and capacitor.

Apparatus required:

S N!
1. 2. 3. $. ". Theor :

Name of the apparatus /ignal .enerator 1esistor ,apacitor ,1? +readboard

Range

T pe

!uantit 01 01 01 01 01

,eramic

A filter is an A, circuit t@at separates some fre>uencies from ot@er in =it@in mi6ed * fre>uenc< signals. Audio equalizers and crossover networks are t=o =ell-Ano=n applications of filter circuits. A Bode plot is a grap@ plotting =aveform amplitude or p@ase on one a6is and fre>uenc< on t@e ot@er. A lo=-pass filter allo=s for eas< passage of lo=-fre>uenc< signals from source to load9 and difficult passage of @ig@-fre>uenc< signals. ,apacitor lo=-pass filters insert a resistor in series and a capacitor in parallel =it@ t@e load as s@o=n in t@e circuit diagram. 7@e former filter design tries to BblocAC t@e un=anted fre>uenc< signal =@ile t@e latter tries to s@ort it out. 7@e cutoff frequency for a lo=-pass filter is t@at fre>uenc< at =@ic@ t@e output (load) voltage e>uals 70.7D of t@e input (/ource) voltage. Above t@e cutoff fre>uenc<9 t@e output voltage is lo=er t@an 70.7D of t@e input9 and vice-versa. /ee t@e circuit diagram 1 8cutoff 0 ---------21,
Department of electrical and electronics engineering $(

EE2207 - Electronic devices and circuits lab

A @ig@-pass filter allo=s for eas< passage of @ig@-fre>uenc< signals from source to load9 and difficult passage of lo=-fre>uenc< signals. ,apacitor @ig@-pass filters insert a capacitor in series =it@ t@e load as s@o=n in t@e circuit diagram. 7@e former filter design tries to BbricAC t@e un=anted fre>uenc< signal =@ile t@e latter tries to s@ort it out. 7@e cutoff fre>uenc< for a @ig@-pass filter is t@at fre>uenc< at =@ic@ t@e output (load) voltage e>uals 70.7D of t@e input (source) voltage. Above t@e cutoff fre>uenc<9 t@e output voltage is greater t@an 70.7D of t@e input9 and vice-versa. 1 8cutoff 0 ---------21, A band * pass filter =orAs to screen out fre>uencies t@at are too lo= or too @ig@9 giving eas< passage onl< to fre>uencies =it@in a certain range. /tacAing a lo=-pass filter on t@e end of a @ig@-pass filter9 or vice-versa can maAe band-pass filters. 1efer t@e circuit diagrams
/ignal input 5o=-pass filter +locAs fre>uencies t@at are too @ig@ :ig@-pass filter +locAs fre>uencies t@at are too lo= /ignal output

8ig. 7.' BAttenuateC means to reduce or diminis@ in amplitude. E@en <ou turn do=n t@e volume control on <our stereo9 <ou are BattenuatingC t@e signal being sent to t@e speaAers. A band-stop filter =orAs to screen out fre>uencies t@at are =it@in a certain range9 giving eas< passage onl< to fre>uencies outside of t@at range. Also Ano=n as band-elimination9 band-reFect9 or notc@ filters. 4lacing a lo=-pass filter in parallel =it@ a @ig@-pass filter can maAe bandstop filters. ,ommonl<9 bot@ t@e lo=-pass and @ig@-pass filter sections are of t@e
Department of electrical and electronics engineering $)

EE2207 - Electronic devices and circuits lab

B7C configuration giving t@e name B7=in-7C to t@e band-stop combination. 1efer t@e fig.7.79 7.(a and 7.(b. 4asses lo= fre>uencies
5o=-pass filter

/ignal &nput

/ignal ?utput

:ig@-pass filter

4asses @ig@ fre>uencies 8ig. 7.(a 7@e fre>uenc< of ma6imum attenuation is called t@e notc@ fre>uenc<. "ro#edure: 1. 2. 3. $. ". '. Resu$t: 7@us =e anal<;e passive filter and various =aveforms are noted .ive t@e connections as per circuit diagrams. /=itc@ on t@e main. ,@ange t@e fre>uenc< from minimum and find t@e output voltage b< using ,1?. Dra= t@e grap@. !erif< t@e cut off fre>uenc<. /=itc@ off t@e main.

Exp. No : 1% &T'() *+ CR* AN( "*,ER +ACT*R -EA&'RE-ENT '&.N/ CR* Aim:
Department of electrical and electronics engineering "0

EE2207 - Electronic devices and circuits lab 7o stud< cat@ode 1a< ?scilloscope (,1?) and measurement of po=er factor using ,1?.

Apparatus required:

S N!
1. 2. 3. $. ". Theor :

Name of the apparatus 1esistance +o6 ,apacitance +o6 &nductance +o6 8unction .enerator +read board

Range

T pe

!uantit 1 1 1 1 1

7@e cat@ode ra< oscilloscope is t@e most versatile measuring instrument available. Ee can measure follo=ing parameters using t@e ,1?G 1. 2. 3. $. A, or D, voltage. 7ime (t012f). 4@ase relations@ip Eaveform calculationG 1ise timeH fall timeH on timeH off-time Distortion9 etc. Ee can also measure non-electrical p@<sical >uantities liAe pressure9 strain9 temperature9 acceleration9 etc.9 b< converting into electrical >uantities using a transducer. -a0or 1$o#2s: 1. 2. 3. $. ". '. ,at@ode ra< tube (,17) !ertical amplifier :ori;ontal amplifier /=eep generator 7rigger circuit Associated po=er suppl<.

Department of electrical and electronics engineering

"1

EE2207 - Electronic devices and circuits lab

1.

The #athode ra tu1e is t@e @eart of ,1?. 7@e ,17 is enclosed in an evacuated glass envelope to permit t@e electron beam to traverse in t@e tube easil<. 7@e main functional units of ,1? are as follo=s. Electron gun assembl< Deflection plate unit /creen.

2.

Verti#a$ Amp$ifier is t@e main factor in determining t@e band=idt@ and sensitivit< of an oscilloscope. !ertical sensitivit< is a measure of @o= muc@ t@e electron beam =ill be deflected for a specified input signal. ?n t@e front panel of t@e oscilloscope9 one can see a Anob attac@ed to a rotar< s=itc@ labeled volts2division. 7@e rotar< s=itc@ is electricall< connected to t@e input attenuation net=orA. 7@e setting of t@e rotar< s=itc@ indicates =@at amplitude signal is re>uired to deflect t@e beam verticall< b< one division.

3.

3ori4onta$ amp$ifier Inder normal mode of operation9 t@e @ori;ontal amplifier =ill amplif< t@e s=eep generator input. E@en t@e ,1? is being used in t@e J-K mode9 t@e @ori;ontal amplifier =ill amplif< t@e signal applied to t@e @ori;ontal input terminal. Alt@oug@ t@e vertical amplifier mus@ be able to fait@full< reproduce lo=-amplitude and @ig@ fre>uenc< signal =it@ fast rise-time9 t@e @ori;ontal amplifier is onl< re>uired to provide a fait@ful reproduction of t@e s=eep signal =@ic@ @as a relativel< @ig@ amplitude and slo= rise time.

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&5eep generator and Trigger #ir#uit 7@ese t=o units form t@e &igna$ & n#hroni4ation unit of the CR*. Asso#iated "o5er &upp$ : 7@e input signal ma< come from an e6ternal source =@en t@e trigger selector s=itc@ is set to EJ7 or from lo= amplitude A, voltage at line fre>uenc< =@en t@e s=itc@ is set to 5&3E or from t@e vertical amplifier =@en t@e s=itc@ is set to &37. E@en
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EE2207 - Electronic devices and circuits lab

set for &37 (internal triggering)9 t@e trigger circuit receives its inputs from t@e vertical amplifier.

-a0or 6$o#2s in a "ra#ti#a$ CR*

A ,1? consists of a cat@ode ra< tube (,17) and additional control Anobs. 7@e main parts of a ,17 areG 1. 2. 3. Electron gun assembl<. Deflection plate assembl<. 8luorescent screen.

E$e#tron /un Assem1$ : 7@e electron gun assembl< produces a s@arp beam of electrons9 =@ic@ are accelerated to @ig@ velocit<. 7@is focused beam of electrons striAe t@e fluorescent screen =it@ sufficient energ< to cause a luminous spot on t@e screen. (ef$e#tion p$ate assem1$ : 7@is part consists of t=o plates in =@ic@ one pair of plates is placed @ori;ontall< and ot@er of plates is placed verticall<. 7@e signal under test is applied to vertical deflecting plates. 7@e @ori;ontal deflection plates are connected to a built-in ramp generator9 =@ic@ moves t@e luminous spot periodicall< in a @ori;ontal direction from left to rig@t over t@e screen. 7@ese t=o deflection plates give stationar< appearance to t@e =aveform on t@e screen. ,1? operates on voltage. /ince t@e deflection of t@e electron beam is directl<

proportional to t@e deflecting voltage9 t@e ,17 ma< be used as a linear measuring device. 7@e voltage being measured is applied to t@e vertical plates t@roug@ an iterative net=orA9 =@ose propagation time corresponds to t@e velocit< of electrons9
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EE2207 - Electronic devices and circuits lab

t@ereb< s<nc@roni;ing t@e voltage applied to t@e vertical plate =it@ t@e velocit< of t@e beam. & n#hroni4ation of input signa$: 7@e s=eep generator produces a sa= toot@ =aveform9 =@ic@ is used to s<nc@roni;e t@e applied voltage to obtain a stationar<applied signal. 7@is re>uires t@at t@e time base be operated at a submultiples fre>uenc< of t@e signal under measurement. &f s<nc@roni;ation is not done9 t@e pattern is not stationar<9 but appears to drift across t@e screen in a random fas@ion. .nterna$ s n#hroni4ation 7@is trigger is obtained from t@e time base generator to s<nc@roni;e t@e signal. Externa$ s n#hroni4ation An e6ternal trigger source can also be used to s<nc@roni;e t@e signal being measured. Auto Triggering -ode 7@e time base used in t@is case in a self-oscillating condition9 i.e.9 it gives an output even in t@e absence of an< K-input. 7@e advantage of t@is mode is t@at t@e beam is visible on t@e screen under all conditions9 including t@e ;ero input. E@en t@e input e6ceeds a certain magnitude t@en t@e internal free running oscillator locAs on to t@e fre>uenc<. "re#autions: 1. 2. 7@e ammeter is connected using t@icA =ires. E@ile reversing ammeter polarit<9 see to it t@at t@e capacitor is not disc@arged. *1ser7ation: &$.No Init Time (/ec) Vo$tage (!olts) Current (Amps)

Resu$t:

7@us =e stud< about ,1? L to measure p.f

Department of electrical and electronics engineering

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EE2207 - Electronic devices and circuits lab

Department of electrical and electronics engineering

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