PD - 96232

IRLB8743PbF
Applications
l l l

HEXFET Power MOSFET

Optimized for UPS/Inverter Applications

High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial use

VDSS
30V

RDS(on) max
3.2m
D

Qg
36nC

Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free

TO-220AB IRLB8743PbF

G Gate

D Drain

S Source

Absolute Maximum Ratings

Parameter
VDS VGS ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C PD @TC = 100C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw

Max.
30 20 150 110 78 620 140 68 0.90 -55 to + 175

Units
V

f
A

h Maximum Power Dissipation h

W W/C C

Thermal Resistance
RJC RCS RJA Junction-to-Case

300 (1.6mm from case) 10lbfxin (1.1N m)

h g

Parameter

Typ.
0.5

Max.
1.11 62

Units
C/W

Case-to-Sink, Flat Greased Surface Junction-to-Ambient

Notes through are on page 9

www.irf.com

1
04/22/09

IRLB8743PbF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy

Min. Typ. Max. Units

30 1.35 190 17 2.5 3.5 1.8 -7.7 36 9.1 4.2 13 13 17.2 21 0.85 23 92 25 36 5110 960 440 3.2 V

Conditions
VGS = 0V, ID = 250A

mV/C Reference to 25C, ID = 1mA VGS = 10V, ID = 40A m VGS = 4.5V, ID = 32A 4.2 2.35 V VDS = VGS, ID = 100A mV/C VDS = 24V, VGS = 0V 1.0 A 100 VDS = 24V, VGS = 0V, TJ = 125C 100 VGS = 20V nA -100 VGS = -20V S VDS = 15V, ID = 32A

e e

54 1.5 Typ. nC ns nC

VDS = 15V VGS = 4.5V ID = 32A

VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 32A RG = 1.8 VGS = 0V VDS = 15V = 1.0MHz Max. 310 32 14 Units mJ A mJ

pF

Avalanche Characteristics

c
29 49

Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time

Min. Typ. Max. Units

150

Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 32A, VGS = 0V TJ = 25C, IF = 32A, VDD = 15V di/dt = 200A/s

620 1.0 44 74 V ns nC

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

www.irf.com

IRLB8743PbF
1000
TOP VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V

1000
TOP VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

BOTTOM

BOTTOM

100

100

60s PULSE WIDTH

Tj = 25C 3.0V 10 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)

3.0V

60s PULSE WIDTH

Tj = 175C 10 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000 T J = 25C T J = 175C 100

2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)

ID, Drain-to-Source Current (A)

ID = 78A VGS = 10V

1.5

10

1.0

VDS = 15V 60s PULSE WIDTH 1.0 1 2 3 4 5 6 7 8

0.5 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (C)

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

www.irf.com

IRLB8743PbF
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd

14.0 ID= 32A

VGS, Gate-to-Source Voltage (V)

12.0 10.0 8.0 6.0 4.0 2.0 0.0

C, Capacitance (pF)

VDS= 24V VDS= 15V

10000 Ciss Coss 1000 Crss

100 1 10 VDS, Drain-to-Source Voltage (V) 100

20

40

60

80

100

QG, Total Gate Charge (nC)

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

1000 T J = 175C 100

10000 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100sec 100 10msec 10 Tc = 25C Tj = 175C Single Pulse 1
0.0 0.5 1.0 1.5 2.0 2.5 3.0

ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

10

1msec

TJ = 25C VGS = 0V

DC 1 10 100

0.1 VSD, Source-to-Drain Voltage (V)

VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

www.irf.com

IRLB8743PbF
160 Limited By Package
VGS(th) , Gate Threshold Voltage (V)

2.5

140 120 100 80 60 40 20 0 25 50 75

ID, Drain Current (A)

2.0

1.5

ID = 100A ID = 250A ID = 1.0mA

1.0

0.5

100

125

150

175

-75 -50 -25 0

25 50 75 100 125 150 175 200

T C , Case Temperature (C)

T J , Temperature ( C )

Fig 9. Maximum Drain Current vs. Case Temperature

Fig 10. Threshold Voltage vs. Temperature

10
Thermal Response ( Z thJC ) C/W

D = 0.50 0.20 0.10 0.05 0.02 0.01

J R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 C 1 2 3 4 4

0.1

Ri (C/W)
0.85073

i (sec)
0.006515 8.246536 6.148011 0.000371

0.01

0.00562 0.00099 0.25266

0.001

Ci= i/Ri Ci i/Ri

SINGLE PULSE ( THERMAL RESPONSE )

Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1

0.0001 1E-006

1E-005

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

IRLB8743PbF
RDS(on), Drain-to -Source On Resistance (m )
9 8 7 6 5 4 3 2 3 4 5 6 7 8 9 10 T J = 25C ID = 40A
1400
EAS , Single Pulse Avalanche Energy (mJ)

1200 1000 800 600 400 200 0 25 50 75 100

ID TOP 11A 18A BOTTOM 32A

T J = 125C

125

150

175

VGS, Gate -to -Source Voltage (V)

Starting T J , Junction Temperature (C)

Fig 12. On-Resistance vs. Gate Voltage

Fig 13c. Maximum Avalanche Energy vs. Drain Current

RD

15V

V DS
VDS L

DRIVER

V GS RG

D.U.T.
+

RG
20V VGS

D.U.T
IAS tp

+ V - DD

-V DD

VGS
Pulse Width 1 s Duty Factor 0.1 %

0.01

Fig 13a. Unclamped Inductive Test Circuit

V(BR)DSS tp

Fig 14a. Switching Time Test Circuit

VDS 90%

10% VGS
td(on) tr t d(off) tf

I AS

Fig 13b. Unclamped Inductive Waveforms

Fig 14b. Switching Time Waveforms

www.irf.com

IRLB8743PbF
D.U.T
Driver Gate Drive

P.W.

Period

D=

P.W. Period VGS=10V

Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

RG
dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test

V DD

VDD

+ -

Re-Applied Voltage Inductor Curent

Body Diode

Forward Drop

Ripple 5%

ISD

* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs

Current Regulator Same Type as D.U.T.

Id Vds

50K 12V .2F .3F

Vgs

D.U.T. VGS
3mA

+ V - DS
Vgs(th)

IG

ID

Qgodr

Qgd

Qgs2 Qgs1

Current Sampling Resistors

Fig 16. Gate Charge Test Circuit

Fig 17. Gate Charge Waveform

www.irf.com

IRLB8743PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

www.irf.com

IRLB8743PbF
TO-220AB Part Marking Information
(;$03/( 7+,6,6$1,5) /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(& ,17(51$7,21$/ 5(&7,),(5 /2*2 '$7(&2'( <($5 :((. /,1(&  3$57180%(5

1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH

$66(0%/< /27&2'(

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

Notes:

Repetitive rating; pulse width limited by

When mounted on 1" square PCB (FR-4 or G-10 Material).

max. junction temperature. Starting TJ = 25C, L = 0.61mH, RG = 25, IAS = 32A. Pulse width 400s; duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 78A.

For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ approximately 90C. This is only applied to TO-220AB pakcage.

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/2009

www.irf.com